The reading accuracy of an imaging device is increased. Clear image capturing is performed even in the case where the luminance is high. A reading circuit of the imaging device includes an amplifier portion and a conversion portion. The amplifier portion amplifies a potential difference between a first signal and a second signal that are sequentially input and outputs the amplified difference to the conversion portion. The conversion portion converts the output potential of the amplifier portion into a digital value. The amplifier portion is reset on the basis of a first reference potential and the first signal and amplifies the potential difference on the basis of a second reference potential that is different from the first reference potential and the second signal.

An electronic switching element is described having, in sequence, a first electrode, a molecular layer bonded to a substrate, and a second electrode. The molecular layer contains compounds of formula I, R.sup.1-(A.sup.1-Z.sup.1).sub.r—B.sup.1—(Z.sup.2-A.sup.2).sub.s-Sp-G, wherein A.sup.1, A.sup.2, B.sup.1, Z.sup.1, Z.sup.2, Sp, G, r, and s are as defined herein, in which a mesogenic radical is bonded to the substrate via a spacer group, Sp, by means of an anchor group, G. The switching element is suitable for production of components that can operate as a memristive device for digital information storage.

A display device includes a first pixel circuit including a light-receiving element and a first transistor, and a second pixel circuit including a light-emitting element and a second transistor. The light-receiving element includes an active layer between a first pixel electrode and a common electrode, and the light-emitting element includes a light-emitting layer between a second pixel electrode and the common electrode. The first pixel electrode and the second pixel electrode are positioned on the same plane. The active layer and the light-emitting layer contain different organic compounds. A source or a drain of the first transistor is electrically connected to the first pixel electrode, and a source or a drain of the second transistor is electrically connected to the second pixel electrode. The first transistor includes a first semiconductor layer containing a metal oxide, and the second transistor includes a second semiconductor layer containing polycrystalline silicon.

An imaging device includes: a first electrode; a charge storage electrode disposed at a distance from the first electrode; a photoelectric conversion layer in contact with the first electrode and above the charge storage electrode, with an insulating layer between the charge storage electrode and the photoelectric conversion layer; and a second electrode on the photoelectric conversion layer. The portion of the insulating layer between the charge storage electrode and the photoelectric conversion layer includes a first region and a second region, the first region is formed with a first insulating layer, the second region is formed with a second insulating layer, and the absolute value of the fixed charge of the material forming the second insulating layer is smaller than the absolute value of the fixed charge of the material forming the first insulating layer.

The present disclosure provides an array substrate and a display panel. The driving circuit layer of the array substrate provided with a first thin-film transistor (TFT) and a second TFT. An exemplified active layer of a P-type TFT is formed by organic conductive polymer material. By using organic conductive polymer materials as the active layer material of the first TFT, the technical problems of the flexibility of the display substrate resulting by the characteristics of the low temperature polysilicon material are solved. The flexibility of the array substrate is enhanced.

The present application discloses a conductive laminated structure, a manufacturing method thereof, and a display panel. The conductive laminated structure provided by the present application comprises a substrate; an adhesion enhancement layer disposed on the substrate; a metal nanowire layer disposed on the adhesion enhancement layer and having a first opening to expose the adhesion enhancement layer; a wiring layer disposed on the metal nanowire layer and having a second opening at least partially overlapping the first opening to expose the adhesion enhancement layer; and an optical adhesive layer disposed on the wiring layer, filled in the second opening and the first opening and connected to the adhesion enhancement layer. Because the metal nanowire layer is in direct contact with the wiring layer, the conducting capability is enhanced, and a reduced contacting area is needed, so that the wiring layer can be relatively narrow.

There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a light absorption sensor on the substrate and including a light absorbing layer arranged in parallel with the light emitting layer along an in-plane direction of the substrate. The light absorbing layer is configured to absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or any combination thereof. The light emitting layer includes a first organic material and the light absorbing layer includes a second organic material. A difference between respective sublimation temperatures of the first and second organic materials is less than or equal to about 150° C., wherein each sublimation temperature is a temperature at which a weight reduction of 10% relative to the initial weight occurs during thermogravimetric analysis under an ambient pressure of about 10 Pa or less.

An integrated circuit including a first circuit module and a second circuit module is provided. A layer stack may include one or multiple metal layers with a power segment and a ground segment connected to the first circuit module and the second circuit module, which form a resonant current loop. A pickup loop may be inductively coupled to the resonant current loop to dampen its resonance, thereby making the IC compliant with its EMC requirements or removing functional errors such as problems in the signal or power integrity.