An ultra-thin shadow mask comprises a plastic foil including a plurality of apertures, wherein the ultra-thin shadow mask is less than 25 μm thick, and wherein the ultra-thin shadow mask has a feature size of at least 1 μm to about 100 μm. An organic photovoltaic (OPV) device comprises a first electrode including a first grid structure, the first grid structure having a feature size of at least 1 μm to about 100 μm, a heterojunction under the first electrode, a second electrode under the heterojunction including a second grid structure, and a plurality of outcoupling layers over the first electrode. Related methods are also disclosed.

A photo detecting device, includes a plurality of photodiodes arranged above a substrate, a lower electrode and a first inorganic insulating film that are provided between the substrate and the photodiodes in a direction orthogonal to a surface of the substrate, and an upper electrode provided above the photodiodes. Each of the photodiodes comprises an active layer, a first carrier transport layer provided between the active layer and the lower electrode, and a second carrier transport layer provided between the active layer and the upper electrode, the first inorganic insulating film is provided between the lower electrode and the first carrier transport layer, and the first inorganic insulating film covers at least an end on an outer edge side of the lower electrode.

An electronic device includes a frame and a display stack. The frame defines a first part of an interior volume. The display stack includes a cover attached to the frame. The cover may define a second part of the interior volume. The display stack also includes an array of organic light-emitting diodes (OLEDs) including an array of emissive electroluminescent (EL) regions, and at least one organic photodetector (OPD) disposed between the cover and at least one emissive EL region in the array of emissive electroluminescent regions. The at least one emissive EL region emits light through the at least one OPD. In alternative embodiments, the OLEDs may be stacked on the OPDs, or the OLEDs and OPDs may be interspersed with each other instead of stacked.

There is provided a semiconductor film that includes an aggregate of semiconductor quantum dots that contain a Pb atom, and a ligand that is coordinated to the semiconductor quantum dot, in which a ratio of the number of Pb atoms having a valence of 1 or less to the number of Pb atoms having a valence of 2 is 0.20 or less. There are also provided a photodetector element, an image sensor, and a manufacturing method for a semiconductor film.

A stretchable device includes a stretchable substrate, and a plurality of optoelectronic diodes on the stretchable substrate. At least one optoelectronic diode includes a first electrode and a second electrode, and an active layer between the first electrode and the second electrode. The active layer includes a first semiconductor, a second semiconductor having different electrical characteristics from the first semiconductor, and an insulating elastomer.

A sensor-embedded display panel includes a substrate, a light emitting element on the substrate and including a light emitting layer, and a photosensor on the substrate and including a photoelectric conversion layer in parallel with the light emitting layer along an in-plane direction of the substrate, wherein the light emitting element and the photosensor each include a separate portion of a first common auxiliary layer that is a single piece of material that extends continuously on the light emitting layer and the photoelectric conversion layer, and a separate portion of a common electrode on the first common auxiliary layer and is configured to apply a common voltage to both the light emitting element and the photosensor, and the photoelectric conversion layer includes a sequential stack from the first common auxiliary layer of a first n-type semiconductor layer, a second n-type semiconductor layer, and a p-type semiconductor layer.

A sensor unit detects beams. The sensor unit has organic photoreceptors, and at least one computing unit. Respective photoreceptors of the organic photoreceptors are configured to generate a voltage depending on a type and intensity of an incident radiation. The respective photoreceptors of the organic photoreceptors are directly connected to the at least one computing unit as a respective signal source. The at least one computing unit is configured to generate an image from information ascertained from the photoreceptors or from electric pulses.

A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.

There is provided a multi-junction photovoltaic device comprising a first sub-cell disposed over a second sub-cell, the first sub-cell comprising a photoactive region comprising a layer of perovskite material and the second sub-cell comprising a silicon heterojunction (SHJ).

A display device includes a first pixel circuit including a light-receiving element and a first transistor, and a second pixel circuit including a light-emitting element and a second transistor. The light-receiving element includes an active layer between a first pixel electrode and a common electrode, and the light-emitting element includes a light-emitting layer between a second pixel electrode and the common electrode. The first pixel electrode and the second pixel electrode are positioned on the same plane. The active layer and the light-emitting layer contain different organic compounds. A source or a drain of the first transistor is electrically connected to the first pixel electrode, and a source or a drain of the second transistor is electrically connected to the second pixel electrode. The first transistor includes a first semiconductor layer containing a metal oxide, and the second transistor includes a second semiconductor layer containing polycrystalline silicon.