An SiC semiconductor device includes an SiC chip having a first main surface at one side and a second main surface at another side, a first main surface electrode including a first Al layer and formed on the first main surface, a pad electrode formed on the first main surface electrode and to be connected to a lead wire, and a second main surface electrode including a second Al layer and formed on the second main surface.

A method for manufacturing a semiconductor device includes: providing a semiconductor substrate having first and second sides; forming at least one doping region at the first side; forming a first metallization structure at the first side on and in contact with the at least one doping region; and subsequently forming a second metallization structure at the second side, the second metallization structure forming at least one silicide interface region with the semiconductor substrate and at least one non-silicide interface region with the semiconductor substrate.

A method for manufacturing a semiconductor device includes: providing a semiconductor substrate having first and second sides; forming at least one doping region at the first side; forming a first metallization structure at the first side on and in contact with the at least one doping region; and subsequently forming a second metallization structure at the second side, the second metallization structure forming at least one silicide interface region with the semiconductor substrate and at least one non-silicide interface region with the semiconductor substrate.

A semiconductor structure includes a first device and a second device bonded on the first device. The first device has a first sidewall distal to the second device and a second sidewall proximal to the second device. A surface roughness of the second sidewall is larger than a surface roughness of the first sidewall.

A semiconductor structure includes a first device and a second device bonded on the first device. The first device has a first sidewall distal to the second device and a second sidewall proximal to the second device. A surface roughness of the second sidewall is larger than a surface roughness of the first sidewall.

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first layer is formed over a silicon carbide (SiC) layer. The first layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. The first layer includes a metal. First thermal energy may be directed to the first surface of the first layer to form a metal silicide layer from the metal of the first layer and silicon of the SiC layer. The metal silicide layer has a first surface distal the SiC layer and a second surface proximal the SiC layer. Second thermal energy may be directed to the first surface of the metal silicide layer to reduce a surface roughness of the first surface of the metal silicide layer

A semiconductor device and a method of manufacturing a semiconductor are provided. In an embodiment, a method of manufacturing a semiconductor device is provided. A first surface of a metal silicide layer may be treated with an oxidizing agent to oxidize metal silicide protrusions on the first surface of the metal silicide layer. After treating the first surface with the oxidizing agent, the first surface may be treated with a cleaning agent to remove oxide over the metal silicide protrusions, wherein a size of a metal silicide protrusion of the metal silicide protrusions after treating the first surface with the cleaning agent is smaller than a size of the metal silicide protrusion prior to treating the first surface with the oxidizing agent.

A bonded assembly of a first semiconductor die and a second semiconductor die includes first and second semiconductor dies. The first semiconductor die includes first semiconductor devices, first metal interconnect structures embedded in first dielectric material layers, and first metal bonding pads laterally surrounded by a semiconductor material layer. The second semiconductor die includes second semiconductor devices, second metal interconnect structures embedded in second dielectric material layers, and second metal bonding pads that include primary metal bonding pads and auxiliary metal bonding pads. The auxiliary metal bonding pads are bonded to the semiconductor material layer through metal-semiconductor compound portions formed by reaction of surface portions of the semiconductor material layer and an auxiliary metal bonding pad. The primary metal bonding pads are bonded to the first metal bonding pads by metal-to-metal bonding.

According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first electrode extending in a first direction through the semiconductor substrate between the first surface and the second surface, a first wiring layer on the first surface and electrically connected to the first electrode, and a second wiring layer on the first wiring layer, the first wiring layer being between the semiconductor substrate and the second wiring layer in the first direction. The second wiring layer includes a connection region at which a second electrode is connected and a first air gap between the connection region and an outer edge of the second wiring layer in a second direction crossing the first direction.

According to one embodiment, a semiconductor device includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, a first electrode extending in a first direction through the semiconductor substrate between the first surface and the second surface, a first wiring layer on the first surface and electrically connected to the first electrode, and a second wiring layer on the first wiring layer, the first wiring layer being between the semiconductor substrate and the second wiring layer in the first direction. The second wiring layer includes a connection region at which a second electrode is connected and a first air gap between the connection region and an outer edge of the second wiring layer in a second direction crossing the first direction.