An integrated circuit device includes a wiring structure, first and second inter-wiring insulating layers, redistributions patterns and a cover insulating layer. The wiring structure includes wiring layers having a multilayer wiring structure and via plugs. The first inter-wiring insulating layer that surrounds the wiring structure on a substrate. The second inter-wiring insulating layer is on the first inter-wiring insulating layer, and redistribution via plugs are connected to the wiring structure through the second inter-wiring insulating layer. The redistribution patterns includes pad patterns and dummy patterns on the second inter-wiring insulating layer. Each patterns has a thickness greater than a thickness of each wiring layer. The cover insulating layer covers some of the redistribution patterns. The dummy patterns are in the form of lines that extend in a horizontal direction parallel to the substrate.

In an embodiment a method includes providing the first component part with a partially exposed first insulating layer, a plurality of first through-vias and an exposed first contact layer structured in places and planarized in places, wherein the first through-vias are each laterally enclosed by the first insulating layer, and wherein the first contact layer partially covers the first insulating layer and completely covers the first through-vias; providing the second component part with a partially exposed second insulating layer, a plurality of second through-vias and an exposed second contact layer structured in places and planarized in places, wherein the second through-vias are each laterally enclosed by the second insulating layer, and wherein the second contact layer partially covers the second insulating layer and completely covers the second through-vias and joining the component parts such that the contact layers overlap each other thereby mechanically and electrically connecting the component parts to each other by a direct bonding process at the contact layers.

In an embodiment a method includes providing the first component part with a partially exposed first insulating layer, a plurality of first through-vias and an exposed first contact layer structured in places and planarized in places, wherein the first through-vias are each laterally enclosed by the first insulating layer, and wherein the first contact layer partially covers the first insulating layer and completely covers the first through-vias; providing the second component part with a partially exposed second insulating layer, a plurality of second through-vias and an exposed second contact layer structured in places and planarized in places, wherein the second through-vias are each laterally enclosed by the second insulating layer, and wherein the second contact layer partially covers the second insulating layer and completely covers the second through-vias and joining the component parts such that the contact layers overlap each other thereby mechanically and electrically connecting the component parts to each other by a direct bonding process at the contact layers.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

A method for manufacturing a semiconductor device includes forming a thermosetting resin film on a first metal layer, forming an opening in the resin film, forming a second metal layer that covers a region from an upper surface of the first metal layer exposed from the opening of the resin film to an upper surface of the resin film, performing heat treatment at a temperature equal to or higher than a temperature at which the resin film is cured after forming the second metal layer, forming a cover film that covers the upper surface of the resin film and a side surface of the second metal layer after performing the heat treatment, and forming a solder on an upper surface of the second metal layer exposed from an opening of the cover film after forming the cover film.

Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

Disclosed in the present specification is a micro LED display device, and a manufacturing method therefor, the method forming, in advance, an anisotropic conductive adhesive paste layer only on a conductive electrode part of a semiconductor light emitting element and on a peripheral part thereof, and then transferring the anisotropic conductive adhesive paste layer to a wiring substrate, thereby simultaneously performing a transfer step and a stable wiring step.

An electronic-part-reinforcing thermosetting resin composition has: a viscosity of 5 Pa.Math.s or less at 140° C.; a temperature of 150° C. to 170° C. as a temperature corresponding to a maximum peak of an exothermic curve representing a curing reaction; and a difference of 20° C. or less between the temperature corresponding to the maximum peak and a temperature corresponding to one half of the height of the maximum peak in a temperature rising range of the exothermic curve.