H01L2924/066

SEMICONDUCTOR PACKAGE

Disclosed is a semiconductor package comprising a first redistribution substrate; a solder ball on a bottom surface of the first redistribution substrate; a second redistribution substrate; a semiconductor chip between a top surface of the first redistribution substrate and a bottom surface of the second redistribution substrate; a conductive structure electrically connecting the first redistribution substrate and the second redistribution substrate, the conductive structure laterally spaced apart from the semiconductor chip and including a first conductive structure and a second conductive structure in direct contact with a top surface of the first conductive structure; and a conductive seed pattern between the first redistribution substrate and the first conductive structure. A material of first conductive structure and a material of the second conductive structure may be different from a material of the solder ball.

Light-emitting device

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

Light-emitting device

A light-emitting device includes: a light-emitting element including a first surface provided as a light extraction surface, a second surface opposite to the first surface, a plurality of third surfaces between the first surface and the second surface, and a positive electrode and a negative electrode at the second surface; a light-transmissive member disposed at the first surface; and a bonding member disposed between the light-emitting element and the light-transmissive member and covering from the first surface to the plurality of third surfaces of the light-emitting element to bond the light-emitting element and the light-transmissive member. The bonding member is made of a resin that contains nanoparticles. The nanoparticles have a particle diameter of 1 nm or more and 30 nm or less and a content of 10 mass % or more and 20 mass % or less.

SILVER PASTE AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING BONDED ARTICLE

This silver paste is used to form a silver paste layer by applying the silver paste directly on the surface of a copper or copper alloy member, and the silver paste includes a silver powder, a fatty acid silver salt, an aliphatic amine, a high-dielectric-constant alcohol having a dielectric constant of 30 or more, and a solvent having a dielectric constant of less than 30. The content of the high-dielectric-constant alcohol is preferably 0.01% by mass to 5% by mass when an amount of the silver paste is taken as 100% by mass.

SILVER PASTE AND METHOD FOR PRODUCING SAME, AND METHOD FOR PRODUCING BONDED ARTICLE

This silver paste is used to form a silver paste layer by applying the silver paste directly on the surface of a copper or copper alloy member, and the silver paste includes a silver powder, a fatty acid silver salt, an aliphatic amine, a high-dielectric-constant alcohol having a dielectric constant of 30 or more, and a solvent having a dielectric constant of less than 30. The content of the high-dielectric-constant alcohol is preferably 0.01% by mass to 5% by mass when an amount of the silver paste is taken as 100% by mass.

DICING DIE ATTACH FILM AND METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR PACKAGE AND METHOD OF PRODUCING THE SAME

A dicing die attach film including a dicing film and a die attach film laminated on the dicing film, in which the die attach film has an arithmetic average roughness Ra1 of from 0.05 to 2.50 μm at a surface in contact with the dicing film, and a value of ratio of Ra1 to an arithmetic average roughness Ra2 at a surface that is of the die attach film and is opposite to the surface in contact with the dicing film is from 1.05 to 28.00.

DICING DIE ATTACH FILM AND METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR PACKAGE AND METHOD OF PRODUCING THE SAME

A dicing die attach film including a dicing film and a die attach film laminated on the dicing film, in which the die attach film has an arithmetic average roughness Ra1 of from 0.05 to 2.50 μm at a surface in contact with the dicing film, and a value of ratio of Ra1 to an arithmetic average roughness Ra2 at a surface that is of the die attach film and is opposite to the surface in contact with the dicing film is from 1.05 to 28.00.

Semiconductor device and manufacturing method thereof
11502057 · 2022-11-15 · ·

A semiconductor device includes a substrate having a plurality of pads on a surface of the substrate, a semiconductor chip that includes a plurality of metal bumps connected to corresponding pads on the substrate, a first resin layer between the surface of the substrate and the semiconductor chip, a second resin layer between the substrate and the semiconductor chip and between the first resin layer and at least one of the metal bumps, and a third resin layer on the substrate and above the semiconductor chip.

Semiconductor device and manufacturing method thereof
11502057 · 2022-11-15 · ·

A semiconductor device includes a substrate having a plurality of pads on a surface of the substrate, a semiconductor chip that includes a plurality of metal bumps connected to corresponding pads on the substrate, a first resin layer between the surface of the substrate and the semiconductor chip, a second resin layer between the substrate and the semiconductor chip and between the first resin layer and at least one of the metal bumps, and a third resin layer on the substrate and above the semiconductor chip.

SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF

Semiconductor package includes interposer, dies, encapsulant. Each die includes active surface, backside surface, side surfaces. Backside surface is opposite to active surface. Side surfaces join active surface to backside surface. Encapsulant includes first material and laterally wraps dies. Dies are electrically connected to interposer and disposed side by side on interposer with respective backside surfaces facing away from interposer. At least one die includes an outer corner. A rounded corner structure is formed at the outer corner. The rounded corner structure includes second material different from first material. The outer corner is formed by backside surface and a pair of adjacent side surfaces of the at least one die. The side surfaces of the pair have a common first edge. Each side surface of the pair does not face other dies and has a second edge in common with backside surface of the at least one die.