An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

A light receiving element enables light incidence from the upper surface of a light receiving element while realizing a structure in which the optical path length is extended, and as a result, facilitates optical mounting. A light receiving element in which a first semiconductor layer, a light absorbing layer composed of a semiconductor, a second semiconductor layer, a first electrode formed in contact with the first semiconductor layer, and a second electrode formed in contact with the second semiconductor layer and including a first reflective layer composed of a metal are formed on an upper surface of a substrate, wherein incident light is incident from the upper surface of the substrate, reflected by the bottom surface of the substrate, and then incident on the light absorbing layer obliquely to the vertical direction.

A light receiving element enables light incidence from the upper surface of a light receiving element while realizing a structure in which the optical path length is extended, and as a result, facilitates optical mounting. A light receiving element in which a first semiconductor layer, a light absorbing layer composed of a semiconductor, a second semiconductor layer, a first electrode formed in contact with the first semiconductor layer, and a second electrode formed in contact with the second semiconductor layer and including a first reflective layer composed of a metal are formed on an upper surface of a substrate, wherein incident light is incident from the upper surface of the substrate, reflected by the bottom surface of the substrate, and then incident on the light absorbing layer obliquely to the vertical direction.

A perovskite-silicon tandem cell capable of absorbing solar radiation with energy lower than that of 1.12 eV, i.e., the bandgap of crystalline silicon—corresponding to the wavelength of 1100 nm. Ho.sup.3+ can absorb photons of wavelength range 1120 to 1190 nm, Tm.sup.3+, 1190 to 1260 nm, and Er.sup.3+, 1145 to 1580 nm, but up-conversion can be achieved using Ho.sup.3+, Tm.sup.3+, and Er.sup.3+-doped metal oxide, such as ZrO.sub.2, in perovskite-silicon tandem solar cells. Doped metal oxides, such as ZrO.sub.2 can also work as selective contacts. Such perovskite-silicon tandem structures can achieve over 30% solar energy conversion efficiency.

The present disclosure relates to a sunlight converting device including a wavelength converting film using a wavelength conversion material such as a quantum dot or an inorganic phosphor. More particularly, the present disclosure provides a sunlight converting device including a wavelength converting film using a wavelength conversion material, which can optimize plant growth and provide improved plant quality by installing a wavelength converting film on which a wavelength conversion material is applied so as to be converted into a predetermined wavelength and output to a greenhouse (glasshouse), a vinyl house or a microalga culture facility, varying the sunlight irradiation area of the wavelength converting film, and supplying light of various wavelengths required for species of plant including microalgae or growth cycles thereof.

The present disclosure relates to a sunlight converting device including a wavelength converting film using a wavelength conversion material such as a quantum dot or an inorganic phosphor. More particularly, the present disclosure provides a sunlight converting device including a wavelength converting film using a wavelength conversion material, which can optimize plant growth and provide improved plant quality by installing a wavelength converting film on which a wavelength conversion material is applied so as to be converted into a predetermined wavelength and output to a greenhouse (glasshouse), a vinyl house or a microalga culture facility, varying the sunlight irradiation area of the wavelength converting film, and supplying light of various wavelengths required for species of plant including microalgae or growth cycles thereof.

Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination.

Tandem solar cell configurations are provided where at least one of the cells is a metal chalcogenide cell. A four-terminal tandem solar cell configuration has two electrically independent solar cells stacked on each other. A two-terminal solar cell configuration has two electrically coupled solar cells (same current through both cells) stacked on each other. Carrier selective contacts can be used to make contact to the metal chalcogenide cell (s) to alleviate the troublesome Fermi level pinning issue. Carrier-selective contacts can also remove the need to provide doping of the metal chalcogenide. Doping of the metal chalcogenide can be provided by charge transfer. These two ideas can be practiced independently or together in any combination.

The present disclosure provides a building unit comprising first and second light transmissive panels. The first panel defines a light receiving surface. The building unit also comprises a structure supporting the panels in a spaced apart relationship to form 5 a cavity therebetween. In addition, the building unit comprises one or more photovoltaic cells disposed within the cavity adjacent the structure. The building unit also comprises an arrangement supported by the structure for re-directing non-visible wavelengths of sunlight incident on or passing through the light receiving surface in a direction generally transverse to a plane of the unit toward structure for collection by 10 the one or more photovoltaic elements. Further, the building unit comprises one or more electrically powered devices within the cavity and arranged to receive electrical power generated by the one or photovoltaic cells.

Disclosed is a photovoltaic module including a transparent material layer, and a plurality of solar cells disposed inside one side of the transparent material layer, and at least one of the plurality of solar cells is disposed to be perpendicular to one side surface of the transparent material layer.