Disclosed herein is a method of manufacturing a zinc oxide nanosheet structure. The zinc oxide nanosheet structure may be manufactured by forming a zinc oxide seed on a substrate and growing zinc oxide from the zinc oxide seed in a zinc oxide growth solution in which zinc precursors and a doping-element-containing compound are dissolved.

An acoustic wave filter includes a substrate, a first resonator disposed on the substrate, a second resonator disposed on the substrate to be spaced apart from the first resonator, a connector electrically connecting the first and second resonators, and a variable capacitor formed in the connector to tune a pass band frequency of the acoustic wave filter.

A MEMS device comprising a body, having a first surface and a second surface; a diaphragm cavity in the body extending from the second surface of the body; a deformable portion in the body between the first surface and the diaphragm cavity; and a piezoelectric actuator, extending on the first surface of the body, over the deformable portion. The MEMS device is characterized in that it comprises a recess structure extending in the body and delimiting a stopper portion for the deformable portion.

In some embodiments, the present disclosure relates to a method for recovering degraded device performance of a piezoelectric device. The method includes operating the piezoelectric device in a performance mode by applying one or more voltage pulses to the piezoelectric device, and determining that a performance parameter of the piezoelectric device has a first value that has deviated from a reference value by more than a predetermined threshold value during a first time period. During a second time period, the method further includes applying a bipolar loop to the piezoelectric device, comprising positive and negative voltage biases. During a third time period, the method further includes operating the piezoelectric device in the performance mode, wherein the performance parameter has a second value. An absolute difference between the second value and the reference value is less than an absolute difference between the first value and the reference value.

An apparatus may include a one- or two-dimensional array of micromechanical ultrasonic transducer (PMUT) elements positioned below, beside, with, on, or above a backplane of a visual display. The backplane may be a thin-film transistor (TFT) backplane. The array of PMUT elements may be a piezoelectric micromechanical ultrasonic transducer (PMUT) array or a capacitive micromechanical ultrasonic transducer (CMUT) array. The PMUT array may be configurable to operate in modes corresponding to multiple frequency ranges. When operating in the low-frequency mode, the apparatus may be capable of gesture detection. A high-frequency mode may include a fingerprint sensor mode or a stylus detection mode.

Provided is a method of manufacturing an ultrasound probe. The method includes: preparing a backing layer having first and second surfaces with different heights due to forming a groove in the backing layer, wherein first and second electrodes are exposed on the first and second surfaces, respectively; forming a third electrode that is in contact with the first electrode; forming a base piezoelectric unit on the third electrode, the base piezoelectric unit including a piezoelectric layer; forming a piezoelectric unit by removing an upper region of the base piezoelectric unit; and forming a fourth electrode on the backing layer and the piezoelectric unit.

An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Methods of designing a BAW resonator and filter and the resulting devices are provided. Embodiments include patterning a bottom electrode of a resonator; patterning a top electrode of the resonator; and intersecting areas of the top and bottom electrodes to provide an effective area of the resonator, wherein the effective area includes a closed-loop contour line including a pulse function pattern with pre-defined amplitude, period and a number of repetitions of pulses along the closed-loop contour line.

The present invention discloses a method for creating spin-affected electric currents passively and feeding them into electric devices. The invention can be realized as either a rectangular black box incorporating coatings on top of and on the bottom of a conducting volume of material, or by coating a round-shaped wire or thread(s) of a cable. This is obtained by using a specific coating material on the conducting piece of material. The material may be piezoelectric, such as silicon dioxide (i.e. quartz) but also silicon carbide (SiC) may be used. Also, mixtures and composite arrangements are possible in order to create a coating. The manufactured add-on unit, when supplied with the input power or input signal, will act as an electron spin feeding device to the electric device because the electrons will be moving strongly within the interface area of the coating and the conducting material with aligned spins. The resulting effect also lasts longer within the electric device than just the time when the add-on unit is connected to the electric device.

Method of designing a BAW resonator and filter and the resulting devices are provided. Embodiments include patterning a bottom electrode of a resonator, patterning a top electrode of the resonator, and intersecting area of the resonator, wherein the effective area includes a closed-loop contour line including a pulse function pattern with predefined amplitude, period and a number of repetitions of pulses along the closed-loop contour line.