In a laser system according to a viewpoint of the present disclosure, a first amplifier amplifies first pulsed laser light outputted from a first semiconductor laser system into second pulsed laser light, a wavelength conversion system converts the second pulsed laser light in terms of wavelength into third pulsed laser light, and an excimer amplifier amplifies the third pulsed laser light. The first semiconductor laser system includes a first current controller that controls current flowing through a first semiconductor laser in such a way that first laser light outputted from the first semiconductor laser is caused to undergo chirping and a first semiconductor optical amplifier that amplifies the first laser light into pulsed light. The laser system includes a control section that controls the amount of chirping performed on the first pulsed laser light in such a way that excimer laser light having a target spectral linewidth is achieved.

A single-mode micro-laser based on a single whispering gallery mode optical microcavity and a preparation method thereof described includes: preparing a desired single whispering gallery mode optical microcavity doped with rare earth ions or containing a gain material such as quantum dots, wherein an optical microcavity configuration include a micro-disk cavity, a ring-shaped microcavity, and a racetrack-shaped microcavity; a material type include lithium niobate, silicon dioxide, silicon nitride, etc.; preparing an optical fiber cone or an optical waveguide of a required size which can excite high-order modes of the optical microcavity, such as a ridge waveguide and a circular waveguides; and coupling, integrating, and packaging the optical fiber cone or the optical waveguide with the microcavity. A pump light is coupled to the optical fiber cone or the optical waveguide to excite a compound mode with a polygonal configuration.

Disclosed are devices, methods, and systems for controlling output of a laser. An example device can comprise a first portion comprising a gain element and a second portion comprising a silicon material. The second portion can comprise a waveguide configured to receive light from the gain element, an optical resonator configured to at least partially reflect light back to the gain element via the waveguide, and a first tuning element configured to tune a resonant frequency of the optical resonator.

A light-emitting device includes: a first light source that oscillates in a single lateral mode; a second light source that oscillates in a multiple lateral mode, the second light source having a light output larger than a light output of the first light source and being configured to be driven independently from the first light source; and a light diffusion member that is provided on an emission path of the second light source.

A light-emitting device includes: a first light-emitting element array that includes plural first light-emitting elements arranged at a first interval; a second light-emitting element array that includes plural second light-emitting elements arranged at a second interval wider than the first interval, second light-emitting element array being configured to output a light output larger than a light output of the first light-emitting element array, and being configured to be driven independently from the first light-emitting element array; and a light diffusion member provided on an emission path of the second light-emitting element array.

The present invention relates to a laser device for polarisation interferometry using a temporally phase-modulated laser source as well as a passive phase delay element. This device, based on the interferences between the electric transverse TE and magnetic transverse TM components, allows improving the sensitivity of measuring apparatuses of the interferometer, ellipsometer or phase-sensitive surface plasmon resonance biosensor type, while proposing a compact and space-saving equipment.

A method of manufacturing a light emitting element includes, at least: (A) forming a stacked structure 20 which includes a GaN-based compound semiconductor and in which a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22 are stacked, and forming a concave mirror section 43 on a first surface side of the first compound semiconductor layer 21; then (B) forming a photosensitive material layer 35 over the second compound semiconductor layer 22; and thereafter (C) exposing the photosensitive material layer 35 to light from the concave mirror section side through the stacked structure 20, to obtain a treatment mask layer including the photosensitive material layer 35, and then processing the second compound semiconductor layer 22 by use of the treatment mask layer.

The invention relates to an athermalized device for generating laser radiation that is focused in a focal point, comprising a lens and a plastic housing and a passive adjustment system for adjusting the object distance S1. The passive adjustment device has an effective coefficient of thermal expansion (I) ${\alpha }_V=\frac{s_1}{f}.Math.\left[{\alpha }_L-\frac{1}{n-1}.Math.\left(\frac{\partial n}{\partial \lambda }.Math.\frac{d\lambda }{\mathrm{dT}}+\frac{\partial n}{\partial T}\right)\right]+{\alpha }_2.Math.\left(1-\frac{s_1}{f}\right).$

A light-emitting device includes: a light source including light-emitting elements configured to oscillate in a single transverse mode; and an optical member that is provided on a light-emitting path of the light source and configured to diffuse and emit light emitted by the light source.

Waveguide Bragg gratings, optical reflectors and lasers including optical reflectors are disclosed. The optical reflectors include a waveguide, perturbations proximate to the waveguide to create a Bragg grating in the waveguide, and a DC index control structure positioned to vary the DC index along at least a portion of the Bragg grating. In laser embodiments, the waveguide may be coupled to the second end of a semiconductor gain element to form an external cavity having an optical length and a cavity phase. The gain element and optical reflector may be monolithically integrated on a substrate or separate structures.