A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

A laser including a grating configured to reduce lasing threshold for a selected vertically confined mode as compared to other vertically confined modes.

A VCSEL can include: an electro-optic modulator between a lasing active region and a light emitting surface. The electro-optic modulator can include: an electro-optically active region; a modulator mirror region over the electro-optically active region; and at least one electrical insulator region separating the modulator mirror region into at least two separate modulator mirror cavities electrically isolated from each other, wherein each separate modulator mirror cavity and a longitudinally aligned portion of the electro-optically active region form an electro-optic modulator cavity. A method of emitting light from a VCSEL can include: emitting a laser beam from the lasing active region along a longitudinal axis; and changing a refractive index of one electro-optic modulator cavity so as to steer the laser beam from the longitudinal axis.

A laser device for generating an optical wave including at least two frequencies, such laser device including: a first element including a gain region, a second mirror, distinct from the first element, and arranged so as to form with a first mirror an optical cavity including the gain region; means for pumping the gain region so as to generate the optical wave; means for shaping the light intensity of the optical wave arranged for selecting at least two transverse modes of the optical wave; and means for shaping the longitudinal and/or transversal phase profile of the optical wave and arranged for adjusting at least two transverse modes of the optical wave.

An embodiment semiconductor optical device includes an optical waveguide including a core, and an active layer extending in the waveguide direction of the optical waveguide for a predetermined distance and arranged in a state in which the active layer can be optically coupled to the core. The core and the active layer are arranged in contact with each other. The core is formed of a material with a refractive index of about 1.5 to 2.2, such as SiN, for example. In addition, the core is formed to a thickness at which a higher-order mode appears. The higher-order mode is an E.sub.12 mode, for example.

A pigtailed diode laser module is configured with a case housing a plurality of multimode chips which are arranged in at least one row and output respective beams in one direction. Each output beam is collimated in upstream fast and downstream slow axes collimators which are spaced from one another in the one direction. The collimated output beams are incident on respective mirrors redirecting the incident output beams in another direction which is transverse to the one direction. Propagating further one above another, the output beams constitute a combined beam which diverges in the slow axis while propagating towards at least one lens which focuses the combined beam in the slow axis in the focal plane thereof. The output fiber is mounted to the case such that its core end is located coplanar with the smallest cross-section of the focused combined beam spaced downstream from the focal plane at a predetermined distance.

A laser including a grating configured to reduce lasing threshold for a selected vertically confined mode as compared to other vertically confined modes.

A semiconductor laser diode is specified, the semiconductor laser diode includes a semiconductor layer sequence having an active layer which has a main extension plane and which, in operation, is adapted to generate light in an active region and to emit light via a light-outcoupling surface, the active region extending from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane, the semiconductor layer sequence having a surface region on which a first cladding layer is applied in direct contact, the first cladding layer having a transparent material from a material system different from the semiconductor layer sequence, and the first cladding layer being structured and having a first structure.

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror, the light-emitting structure layer including a light-emitting layer; and a second multilayer film reflecting mirror formed on the light-emitting structure layer, the second multilayer film reflecting mirror constituting a resonator between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The light-emitting structure layer has a high resistance region and a low resistance region having an electrical resistance lower than an electrical resistance of the high resistance region. The low resistance region has a plurality of partial regions arranged into a ring shape while being separated by the high resistance region in a plane of the light-emitting structure layer.

A light-emitting device includes: a light source including plural light-emitting elements; a first optical member that is provided in a light-emitting path of the light source, the first optical member being configured to reduce intensity of light emitted from the light source and emit the light; and a second optical member that is provided on a light-emitting side of the first optical member and is configured to diffuse and irradiate light incident from the first optical member.