Patent classifications
H01S3/0615
Coating-less nonplanar planar ring oscillator laser
Coating-less nonplanar ring oscillator lasers are disclosed. Such lasers may eliminate the need for thin-film optical coatings from a laser cavity, solving the problem of optical damage to the coatings, and thus, providing a longer useful lifetime for the laser for space or terrestrial applications. Such lasers may be compact, ultra-stable, and highly reliable, enabling a low phase noise, single frequency laser in a compact package. Such lasers may be used in CW and/or in pulse mode.
Slab laser and amplifier
A laser for high power applications. The laser is a lamp driven slab design with a face to face beam propagation scheme and an end reflection that redirects the amplified radiation back out the same input surface. Also presented is a side to side larger amplifier configuration, permitting very high average and peak powers due to the electrical efficiency of absorbing energy into the crystal, optical extraction efficiency, and scalability of device architecture. Cavity filters adjacent to pump lamps convert the unusable UV portion of the pump lamp spectrum into light in the absorption band of the slab laser thereby increasing the overall pump efficiency. The angle of the end reflecting surface is changed to cause the exit beam to be at a different angle than the inlet beam, thereby eliminating the costly need to separate the beams external to the laser with the subsequent loss of power.
PASSIVELY Q-SWITCHED SOLID-STATE LASER WITH COMPRESSED PULSE DURATION
A passively Q-switched solid-state laser includes a resonator (1) with an active laser material (2) and a decoupling end mirror (6) for decoupling laser pulses that have a pulse duration of less than 1 ns from the resonator (1), an optical fiber (13), into which the laser pulses decoupled from the decoupling end mirror (6) are injected, and a chirped volume Bragg grating (17), at which the laser pulses are reflected after they have passed through the optical fiber (13) for shortening the pulse duration. The pulse duration after the reflection on the chirped volume Bragg grating (17) is less than 30 ps. The active laser material (2) is Nd:YAG and a saturable absorber (3) that is formed from Cr:YAG and has a transmission in the unsaturated state of less than 50% is also arranged in the resonator. The length (a) of the resonator (1) is from 1 mm to 10 mm and the laser pulses decoupled at the decoupling end mirror (6) have a pulse energy from 1 J to 200 J.
Optical device
According to one embodiment, an optical device includes a first mirror, a second mirror, and a first member. The first mirror has a first planar surface. The second mirror is spaced from the first mirror in a first direction crossing the first planar surface. The second mirror has a concave surface including a first region and a second region around the first region. First distance between the first region and the first planar surface in the first direction is longer than second distance between the second region and the first planar surface in the first direction. The first distance is half or less of curvature radius of the concave surface. The first member is light transmissive and solid. The first member includes a first portion provided between the first mirror and the second mirror. The first portion is in contact with the first planar surface and the concave surface.
LASER DEVICE, METHOD FOR CONTROLLING LASER DEVICE, AND MASS SPECTROSCOPE
A laser device for laser resonance ionization includes a wavelength variable grating-type titanium-doped sapphire laser and includes a titanium (Ti) doped titanium sapphire crystal disposed within a resonator. The titanium sapphire crystal is fixedly disposed on a stage. The titanium-doped sapphire crystal can be moved in the optical axis direction by the stage, thereby changing the position of the titanium-doped sapphire crystal. The switching between the wideband mode and the high-output mode can be performed by changing the position of the titanium-doped sapphire crystal.
Planar waveguide laser device
In a planar waveguide laser device (1), a substrate (6) is joined to the upper surface of a waveguide (2). A recess (6a) having a chamfered shape is formed along an edge of an end facet of the substrate (6) on the side of the waveguide (2), the end facet being perpendicular to the direction of laser oscillation. An end facet of the waveguide (2) perpendicular to the oscillation direction of laser light is covered with a coating (7). A wraparound portion (7a) continuing from the coating (7) covers the upper surface of the waveguide (2) facing the recess (6a) of the substrate (6).
High-Power Mode-Locked Laser System and Methods of Use
A high-power mode-locked laser system is disclosed herein which includes at least one pump source, at least one laser cavity formed by at least one high reflector and at least one output coupler, and at least one ytterbium-doped optical crystal positioned within the laser cavity in communication with the pump source, the ytterbium-doped optical crystal configured to output at least one output signal of at least 20 W, having a pulse width of 200 fs or less, and a repetition rate of at least 40 MHz.
AMPLIFIER ASSEMBLY
An amplifier assembly may include a first heat sink plate that includes a first channel, a second heat sink plate that includes a second channel, and an amplifier rod disposed in the first channel and the second channel. The second heat sink plate may be connected with the first heat sink plate such that the first channel and the second channel align. The amplifier rod may be connected to the first heat sink plate and the second heat sink plate by a non-eutectic solder.
Solid-state laser device
A solid-state laser device includes a resonator composed of a pair of mirrors, a laser rod disposed in the resonator, and a laser chamber. The resonator and the laser rod are disposed in a housing. The laser rod is inserted through a hole of the laser chamber and is supported in a state in which two end portions are exposed. An O-ring is disposed at an exposed root of at least one rod end portion exposed from the laser chamber. The solid-state laser device includes a cover member that is disposed on a rod side surface of the rod end portion between the O-ring and a rod end surface and that blocks incidence of stray light, which is generated in the housing, on the O-ring.
KIND OF ALL-SOLID-STATE HIGH-POWER SLAB LASER BASED ON PHONON BAND-EDGE EMISSION
A kind of all-solid-state high-power slab laser based on phonon band-edge emission, which is comprised of a pumping source, a focusing system, a resonant cavity and a self-frequency-doubling crystal; the said self-frequency-doubling crystal is a Yb-doped RECOB crystal cut into slab shape along the direction of the crystal's maximum effective nonlinear coefficient of its non-principal plane; by changing the cutting direction of the crystal, the phase matching of different wavelengths is realized, thus realizing laser output at the band of 560-600 nm; the said pumping source is a diode laser matrix with a wavelength of 880 nm-980 nm; the input cavity mirror and the output cavity mirror are coated with films to obtain laser output at the band of 560-600 nm; the two large faces of the said self-frequency-doubling crystal is cooled by heat sink and located between the input cavity mirror and the output cavity mirror.