An optoelectronic device grown on a miscut of GaN, wherein the miscut comprises a semi-polar GaN crystal plane (of the GaN) miscut x degrees from an m-plane of the GaN and in a c-direction of the GaN, where −15<x<−1 and 1<x<15 degrees.

In one example, a vertical cavity surface emitting laser (VCSEL) may include an active region to produce light at a wavelength, an emission surface to emit the light at the wavelength, a first oxide region spaced apart from the active region by a distance of at least a half-wavelength of the wavelength, a first oxide aperture in the first oxide region, a second oxide region between the first oxide region and the second oxide region, and a second oxide aperture in the second oxide region. The emitted light may have a divergence angle that is based on the respective positions and thicknesses of the first oxide region and the second oxide region.

A light emitting device includes: a base comprising a first wiring, a second wiring, and a third wiring; a first semiconductor laser element electrically connected to the first wiring and the second wiring, at an upper surface side of the base; a second semiconductor laser element electrically connected to the second wiring and the third wiring, at the upper surface side of the base; and a base cap fixed to the base such that the first semiconductor laser element and the second semiconductor laser element are enclosed in a space defined by the base and the base cap. The first semiconductor laser element and the second semiconductor laser element are connected in series. A portion of each of the first, second, and third wirings is exposed at the upper surface of the base at locations outside of the space defined by the base and the base cap.

An apparatus such as an optical modulator includes a buried oxide layer is disposed on a substrate. A microring resonator and an optical waveguide are disposed on the buried oxide layer and within a bonded semiconductor layer. The optical waveguide is optically coupled to the microring resonator and inputs a first optical wave into the microring resonator. An oxide layer is deposited on top of the optical waveguide and the microring resonator. A set of electrodes is disposed adjacent to the microring resonator, and in response to an electrical signal, the set of electrodes modulates the first optical wave into a modulated optical wave of transverse magnetic polarization within the microring resonator and outputs the modulated optical wave to the optical waveguide.

A semiconductor optical device includes a substrate of a first conductivity type; an optical confinement layer of the first conductivity type, which is arranged above the substrate of the first conductivity type; a multi quantum well layer, which is arranged above the optical confinement layer of the first conductivity type, and comprises a plurality of well layers and a plurality of barrier layers; an optical confinement layer of a second conductivity type, which is arranged on the multi quantum well layer; and a PL stabilization layer, which is arranged between the substrate of the first conductivity type and the multi quantum well layer. The PL stabilization layer having a thickness that is half a thickness of the multi quantum well layer or more, and having a composition wavelength that is shorter than a composition wavelength of the plurality of well layers of the multi quantum well layer.

In a method of manufacturing surface-emitting lasers, a substrate having a major surface including a plurality of areas each provided with a plurality of surface-emitting lasers is prepared. A first laser beam emitted when a direct-current voltage is applied to each of an n number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, n being an integer of 2 or greater. A second laser beam emitted when an alternating-current voltage is applied to each of an m number of surface-emitting lasers among the plurality of surface-emitting lasers is measured, m being a natural number smaller than n. Whether the n number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the first laser beam. Whether the m number of surface-emitting lasers are each conforming or defective is determined from a result of the measurement of the second laser beam.

A disclosed semiconductor laser module includes a semiconductor laser device; a waveguide optical function device that has an incidence end on which laser light emitted from the semiconductor laser device is incident and that guides the incident light; and a protrusion that is provided on an extension line of a light path of the laser light emitted from the semiconductor laser device, the extension line extending beyond the incidence end.

A test device and method for testing a distributed feedback laser diode (DFB-LD) device for an optical transceiver of a radio over fiber (RoF) system examines the DFB-LD device based on an absolute limiting rating, an operating case environment, and a functional specification, in which the absolute limiting rating is a rating at which there is no fatal damage to the DFB-LD device during a short period of time when each limiting parameter is isolated and all other parameters are in a normal performance parameter, the operating case environment includes an operating temperature, and the functional specification includes parameters to be tested according to an operating condition for the functional specification.

A laser apparatus includes: a light source configured to generate laser light; and an optical negative feedback unit configured to narrow a spectral line of the laser light using optical negative feedback. A modulation signal is input to the light source to modulate a frequency of the laser light. A modulation amount in the frequency of the laser light is detected. A modulation sensitivity is calculated from (i) the modulation amount and (ii) an intensity of the modulation signal.

According to aspects of the embodiments, there is provided an apparatus and method for driving a laser imaging module (LIM) that includes an adjustment current to have all laser diodes emitting the same amount of output so that the diodes can be connected in series on a single high current power source. Fine tuning can be done by a dedicated low current controllable power source connected directly to each laser diode. A series connected LIM uses only two heavy gauge wires so total power loss and heat stress on the LIM and module drawer connectors will be significantly reduced. Additional fine tuning can include an electronic gate so that individual diodes could be quickly turned off independently from each other.