Methods for driving a tunable laser with integrated tuning elements are disclosed. The methods can include modulating the tuning current and laser injection current such that the laser emission wavelength and output power are independently controllable. In some examples, the tuning current and laser injection current are modulated simultaneously and a wider tuning range can result. In some examples, one or both of these currents is sinusoidally modulated. In some examples, a constant output power can be achieved while tuning the emission wavelength. In some examples, the output power and tuning can follow a linear relationship. In some examples, injection current and tuning element drive waveforms necessary to achieve targeted output power and tuning waveforms can be achieved through optimization based on goodness of fit values between the targeted and actual output power and tuning waveforms.

A layered structure comprising a substrate having a first deformation. Also one or more device layers forming a device and having a second deformation. A deformation control layer which is pseudomorphic with respect to the substrate and having a third deformation. The deformation control layer is selected such that a sum of the first, second and third deformations matches a target level of deformation. Advantageously the layered structure has a controlled, known deformation which can be compressive, tensile or zero.

In an embodiment a semiconductor laser component includes a plurality of semiconductor lasers, each of the semiconductor lasers configured to emit primary electromagnetic radiation of a primary spectral bandwidth in a visible wavelength range and a beam combiner configured to combine the primary electromagnetic radiations emitted from the semiconductor lasers, form secondary electromagnetic radiation from a superposition of the primary electromagnetic radiations of the semiconductor lasers and couple the secondary electromagnetic radiation out from the beam combiner, wherein the secondary electromagnetic radiation has a secondary spectral bandwidth that is at least twice as large as an average value of the primary spectral bandwidths.

An optical fiber support structure includes: a first portion configured to support an optical fiber including a core wire and a covering surrounding the core wire, the core wire including a core and a cladding; a second portion attached to the first portion; and a relaxing portion that is connected to an end portion of the core wire and that is positioned between the first portion and the second portion, the relaxing portion having a light receiving surface configured to receive light input from a space, an area of the light receiving surface being larger than an area of the end portion of the core wire.

Described herein is a fiber laser coupler, comprising a fiber laser cable enclosed in a housing, the housing includes a circuit and a temperature sensitive variable resistance element (TSVRE) coupled to the circuit, wherein the TSVRE is in thermal contact with one or more locations within the housing and is configured to provide a resistance in the circuit associated with a temperature of the TSVRE, wherein the circuit is further configured to couple to a processor configured to determine a temperature of the TSVRE based on reading the resistance in the circuit.

According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

A sensor system includes a self-mixing interferometry sensor; a drive circuit configured to apply a modulated drive signal to an input of the self-mixing interferometry sensor; a mixer circuit configured to mix a modulated output of the self-mixing interferometry sensor with a local oscillator signal that is orthogonal to the modulated drive signal over a period of time; an integrator circuit configured to integrate an output of the mixer circuit over the period of time; and a processor configured to determine, using an output of the integrator circuit, at least one of a round-trip propagation time of electromagnetic radiation emitted by the self-mixing interferometry sensor and reflected back into the self-mixing interferometry sensor by an object or medium, or a velocity of the object or medium.

A method for producing an integrated micromechanical fluid sensor component includes forming a first wafer with a first Bragg reflector and with a light-emitting device on a first substrate. The light-emitting device is configured to emit light rays in an emission direction from a surface of the light-emitting device facing away from the first Bragg reflector. The method further includes forming a second wafer with a second Bragg reflector and with a photodiode on a second substrate. The photodiode is arranged on a surface of the second Bragg reflector facing towards the second substrate. The method also includes bonding or gluing the first wafer to the second wafer such that there is formed a cavity into which a fluid is introduced and through which the light rays can pass. The method further includes separating the fluid sensor component from the first and the second wafer.

A tunable source includes a short-cavity laser optimized for performance and reliability in SSOCT imaging systems, spectroscopic detection systems, and other types of detection and sensing systems. The short cavity laser has a large free spectral range cavity, fast tuning response and single transverse, longitudinal and polarization mode operation, and includes embodiments for fast and wide tuning, and optimized spectral shaping. Disclosed are both electrical and optical pumping in a MEMS-VCSEL geometry with mirror and gain regions optimized for wide tuning, high output power, and a variety of preferred wavelength ranges; and a semiconductor optical amplifier, combined with the short-cavity laser to produce high-power, spectrally shaped operation. Several preferred imaging and detection systems make use of this tunable source for optimized operation are also disclosed.

The invention relates to laser diode for generating laser radiation of at least two frequencies, comprising: a semiconductor body having a ridge waveguide; a DFB structure or DBR structure in the ridge waveguide; and a piezoelectric element for producing mechanical stress in the ridge waveguide, which piezoelectric element is arranged on the ridge waveguide. The invention further relates to a method for producing laser radiation of at least two frequencies by means of the laser diode.