A vertical cavity surface emitting laser (VCSEL) may include a substrate layer, epitaxial layers on the substrate layer, and angled reflectors configured to receive an optical beam emitted toward a bottom surface of the VCSEL and redirect the optical beam through an exit window in a top surface of the VCSEL. In some implementations, the angled reflectors may be formed in the substrate layer. Additionally, or alternatively, the VCSEL may include molded optics, where the molded optics include the angled reflectors. In some implementations, the exit window may include an integrated lens.

Resonant optical cavity light emitting devices and method of producing such devices are disclosed. The device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength, and is positioned at a separation distance from the reflector. The reflector has a metal composition comprising elemental aluminum. Using a three-dimensional electromagnetic spatial and temporal simulator, it is determined if an emission output at an exit plane relative to the substrate meets a predetermined criterion. The light emitting region is placed at a final separation distance from the reflector, where the final separation distance results in the predetermined criterion being met.

According to various embodiments, there is provided a layer arrangement including a graphene layer; a gating electrode layer configured to provide a tuning voltage to the graphene layer; a laser layer configured to provide an electromagnetic wave; and a concentric-circular grating layer configured to couple the electromagnetic wave to the graphene layer.

A light-emitting device according to an embodiment of the present disclosure includes a laminate. The laminate includes an active layer, and a first semiconductor layer and a second semiconductor layer sandwiching the active layer. This light-emitting device further includes a current constriction layer having an opening and a vertical resonator including a first reflecting mirror having a concave-curved shape on the first semiconductor layer side and a second reflecting mirror on the second semiconductor side. The first reflecting mirror and the second reflecting mirror sandwich the laminate and the opening. This light-emitting device further includes an optically transparent substrate between the first reflecting mirror and the laminate. The optically transparent substrate has a first convex portion having a convex-curved shape and one or more second convex portions on a surface on the side opposite to the laminate. The first convex portion is in contact with the first reflecting mirror. The one or more second convex portions are provided around the first convex portion. The one or more second convex portions each have a height greater than or equal to a height of the first convex portion, and an end on the first reflecting mirror side has a convex-curved shape.

A light emitting element includes an active layer; and a first reflecting mirror over the active layer. The first reflecting mirror includes a multilayer-film reflecting mirror and a first layer on a first surface. The multilayer-film reflecting mirror has the first surface and a second surface closer to the active layer than the first surface, and includes a first refractive-index layer having a first refractive index; and a second refractive-index layer having a second refractive index higher than the first refractive index. The first refractive-index layer and the second refractive-index layer are alternately stacked. The first surface has an emission region from which the light generated in the active layer is emitted. The first layer is in the emission region of the first surface and is configured to absorb a portion of the light emitted from the first surface and transmit another portion of the light through the first layer.

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

An optoelectronic device includes a semiconductor substrate having first and second faces. An emitter is disposed on the first face of the semiconductor substrate and is configured to emit a beam of radiation through the substrate. At least one curved optical surface is formed in the second face of the semiconductor substrate. A first reflector is disposed on the first face in proximity to the emitter, and a second reflector is disposed on the second face in proximity to the curved optical surface, such that the second reflector reflects the beam that was emitted through the semiconductor substrate by the emitter to reflect back through the semiconductor substrate toward the first reflector, which then reflects the beam to pass through the semiconductor substrate so as to exit from the semiconductor substrate through the curved optical surface.

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The reflector may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math.λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.

Provided is an optical modulator including a plurality of unit cells, an active layer including a plurality of refractive index changing areas that are separated from each other, each of the plurality of refractive index changing areas having a refractive index that changes based on an electrical signal applied thereto, a plurality of antenna patterns provided over the active layer, and a mirror layer provided under the active layer opposite to the plurality of antenna patterns.

Resonant optical cavity light emitting devices are disclosed, where the device includes a substrate, a first spacer region, a light emitting region, a second spacer region, and a reflector. The light emitting region is configured to emit a target emission deep ultraviolet wavelength and is positioned at a separation distance from the reflector. The reflector may be a distributed Bragg reflector. The device has an optical cavity comprising the first spacer region, the second spacer region and the light emitting region, where the optical cavity has a total thickness less than or equal to K.Math.λ/n. K is a constant ranging from 0.25 to 10, λ is the target wavelength, and n is an effective refractive index of the optical cavity at the target wavelength.