Coupled-cavity vertical cavity surface emitting lasers (VCSELs) are provided by the present disclosure. The coupled-cavity VCSEL can comprise a VCSEL having a first mirror, a gain medium disposed above the first mirror, and a second mirror disposed above the gain medium, wherein a first cavity is formed by the first mirror and the second mirror. A second cavity is optically coupled to the VCSEL and configured to reflect light emitted from the VCSEL back into the first cavity of the VCSEL. In some embodiments, the second cavity can be an external cavity optically coupled to the VCSEL through a coupling component. In some embodiments, the second cavity can be integrated with the VCSEL to form a monolithic coupled-cavity VCSEL. A feedback circuit can control operation of the coupled-cavity VCSEL so the output comprises a target high frequency signal.

A transmission apparatus for laser radar, which includes: a light source including a light emitting array composed of M*N light emitting unit(s) configured for transmitting M*N beam(s) of light, where each row of the light emitting units of the light emitting array are arranged along a first direction, each column of the light emitting units of the light emitting array are arranged along a second direction; a collimating mirror configured for collimating the M*N beam(s) of light; a diffusion sheet including a first field of view in the first direction configured for converting the M*N beam(s) of light into M*N beam(s) of linear light with a first divergence angle in the first direction, and projecting the linear light to a target object to form N linear light spots parallel to the first direction, and the first field of view being equal to the first divergence angle.

A vertical cavity surface emitting laser (VCSEL) device may include a substrate layer and a first set of epitaxial layers, for a first VCSEL, disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers, for a second VCSEL, disposed on the first set of epitaxial layers for the first VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The first VCSEL and the second VCSEL may be configured to emit light in a light emission direction. The at least one first active layer of the first VCSEL may be offset in the light emission direction from the at least one second active layer of the second VCSEL.

A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.

An optoelectronic semiconductor chip comprises a semiconductor body including a plurality of active regions configured to generate electromagnetic radiation, the plurality of active regions being arranged in a horizontal plane. The optoelectronic semiconductor chip further comprises a conductive member configured to electrically connect at least two adjacent ones of the active regions with each other, the conductive member being arranged over a first main surface of the semiconductor body. The optoelectronic semiconductor chip further comprises a contact element extending from the first main surface to a second main surface of the semiconductor body and being electrically connected to at least one of the active regions via a contact material over the first main surface, and an optical element arranged over the first main surface of the semiconductor body.

An optoelectronic device includes a base chip, including a silicon die having a photodiode disposed at its front surface and a first anode contact and a first cathode contact disposed on the front surface. A laser diode driver circuit on the silicon die supplies an electrical drive signal between the first anode contact and the first cathode contact. An emitter chip includes a III-V semiconductor die, which is mounted with its front side facing toward the front surface of the silicon die. A second anode contact and a second cathode contact are disposed on the front side of the III-V semiconductor die in electrical communication with the first anode contact and the first cathode contact. A VCSEL is disposed on the front side of the III-V semiconductor die in coaxial alignment with the photodiode and receives the drive signal from the second anode contact and the second cathode contact.

A surface emitting laser element array includes multiple two-dimensionally arranged surface-emitting laser element groups each including multiple surface-emitting laser elements. The multiple surface-emitting laser element groups are drivable independently of each other. The multiple surface-emitting laser element groups are arranged in an arrangement region such that the number of surface-emitting laser element groups arranged in a first direction is larger than the number of surface-emitting laser element groups arranged in a second direction perpendicular to the first direction. An irradiation region irradiated with light emitted from the multiple surface-emitting laser element groups has a shape elongated in the first direction. The arrangement region in which the multiple surface-emitting laser element groups are arranged has an aspect ratio closer to 1:1 than the irradiation region.

A bottom-emitting multijunction VCSEL array includes a first reflector region, a multijunction active region, and a second reflector region. In one aspect, the multijunction VCSEL array is attached to a submount by flip-chip bonding. In another aspect, the multijunction VCSEL array further includes a contact layer formed between the first reflector region and the substrate. The multijunction VCSEL array is attached to a submount by flip-chip bonding.

This disclosure provides methods and apparatuses for sorting target particles. In various embodiments, the disclosure provides a cassette for sorting target particles, methods for sorting target particles, methods of loading a microchannel for maintaining sample material viability, methods of quantifying sample material, and an optical apparatus for laser scanning and particle sorting.

A semiconductor device according to an embodiment may include a plurality of light emitting structures, a first electrode disposed around the plurality of light emitting structures, a second electrode disposed on an upper surface of the plurality of light emitting structures, a first bonding pad electrically connected to the first electrode, and a second bonding pad electrically connected to the second electrode. The plurality of light emitting structures may include a first light emitting structure that includes a first DBR layer of a first conductivity type, a first active layer disposed on the first DBR layer, and a second DBR layer of a second conductivity type disposed on the first active layer; and a second light emitting structure that includes a third DBR layer of the first conductivity type, a second active layer disposed on the third DBR layer, and a fourth DBR layer of the second conductivity type disposed on the second active layer. The first electrode may be electrically connected to the first DBR layer and the third DBR layer, and disposed between the first light emitting structure and the second light emitting structure. The second electrode may be electrically connected to the second DBR layer and the fourth DBR layer, and disposed on an upper surface of the second DBR layer and an upper surface of the fourth DBR layer.