There is provided a light emitting device including: a substrate; a laminated structure provided on the substrate and having a plurality of columnar portions, in which the columnar portion includes an n-type first semiconductor layer, a p-type second semiconductor layer, a light emitting layer provided between the first semiconductor layer and the second semiconductor layer, and a third semiconductor layer having a band gap larger than that of the light emitting layer, and the third semiconductor layer includes a first part provided between the light emitting layer and the second semiconductor layer, and a second part that is in contact with a side surface of the light emitting layer.

An electrically pumped photonic-crystal surface-emitting laser, the epitaxy structure has a first mesa, the first mesa has multiple air holes and forming a photonic crystal structure, the epitaxy structure further has a second mesa, the second mesa and photonic crystal structure is facing the same direction; a first metal electrode arranged on the insulating layer, and covering the photonic crystal structure; a second metal electrode arranged on the second mesa and protruding out of the groove, making the first metal electrode and the second metal electrode face the same direction; and further make the first metal electrode connect to the first connecting metal and make the second metal electrode connect to the second connecting metal for making the photonic crystal structure become flip chip.

A photonic crystal surface-emitting laser includes a substrate, an n-type cladding layer, an active layer, a photonic crystal structure, a p-type cladding layer, an n-type semiconductor layer and a meta-surface structure. The n-type cladding layer is disposed over the substrate. The active layer is disposed over the n-type cladding layer. The photonic crystal structure is disposed over the active layer. The p-type cladding layer is disposed over the photonic crystal structure. The n-type semiconductor layer is disposed over the p-type cladding layer. The meta-surface structure disposed on a surface of the n-type semiconductor layer away from the p-type cladding layer.

The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.

The light emitting device includes a substrate, and a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the laminated structure includes a third semiconductor layer which is connected to an opposite side to the substrate of the second semiconductor layer, and is same in conductivity type as the second semiconductor layer, the second semiconductor layer is disposed between the light emitting layer and the third semiconductor layer, the third semiconductor layer is provided with a recessed part, an opening of the recessed part is provided to a surface at an opposite side to the substrate side of the third semiconductor layer, and a diametrical size in a bottom of the recessed part is smaller than a diametrical size in the opening of the recessed part.

A semiconductor laser is provided that includes a semiconductor layer sequence and electrical contact surfaces. The semiconductor layer sequence includes a waveguide with an active zone. Furthermore, the semiconductor layer sequence includes a first and a second cladding layer, between which the waveguide is located. At least one oblique facet is formed on the semiconductor layer sequence, which has an angle of 45° to a resonator axis with a tolerance of at most 10°. This facet forms a reflection surface towards the first cladding layer for laser radiation generated during operation. A maximum thickness of the first cladding layer is between 0.5 M/n and 10 M/n at least in a radiation passage region, wherein n is the average refractive index of the first cladding layer and M is the vacuum wavelength of maximum intensity of the laser radiation.

An optoelectronic semiconductor laser component may include at least two laser units. The semiconductor laser component may have an output coupling surface configured to generate electromagnetic radiation in the semiconductor laser component. Each laser unit may include a laser resonator having a resonator axis, an output coupling mirror and a first and a second resonator mirror with a primary section of the resonator axis running laterally therebetween. The output coupling mirror may be formed by a partial region of the output coupling surface. Along the primary section of the resonator axis at least one contact strip is arranged on the output coupling surface, and extends to a metallic connection surface. The laser units may be aligned in such a way that the primary sections of the resonator axes run parallel to one another and the output coupling mirrors face one another.

An embodiment relates to a light source module dynamically controlling a phase distribution of light. The light source module includes a semiconductor stack portion. The semiconductor stack portion includes a stacked body including an active layer and a photonic crystal layer causing Γ-point oscillation, and includes a phase synchronization portion and an intensity modulation portion which are arranged in a Y-direction as one resonance direction of the photonic crystal layer. The stacked body in the intensity modulation portion has M (≥2) pixels each arranged in an X-direction and including N.sub.1 (≥2) subpixels. A length of a region including consecutive N.sub.2 (≥2, ≤N.sub.1) subpixels among the N.sub.1 subpixels, defined in the X-direction, is smaller than an emission wavelength of the active layer. The light source module outputs laser light from each M pixel included in the intensity modulation portion in a direction intersecting both X- and Y-directions.

A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and a covering part configured to cover the laminated structure, wherein the columnar parts have a light emitting layer, and the covering part is provided with a through hole penetrating the covering part.

A light emitting device includes a substrate, a laminated structure provided to the substrate, and including a plurality of columnar parts, and a covering part configured to cover the laminated structure, wherein the columnar parts have a light emitting layer, and the covering part is provided with a through hole penetrating the covering part.