A power amplifier arrangement comprises a power amplifier comprising at least one transistor having a first gate and a second gate. The first gate is configured to receive a radio frequency input signal superimposed with a first control signal, and the second gate is configured to receive a second control signal. The first control signal is a linearization signal varying in relation to an envelope of the input signal and the second control signal is a temperature compensation signal varying in relation to a temperature of the power amplifier, or vice versa.

An amplifier includes input transconductors that receive an input signal, the input signal having a voltage swing. A supply side current mirror generates a gate voltage as a function of input signal voltage and current sources that provide a bias current of the input transconductors as a function of the gate voltage to maintain a constant bias current across the voltage swing of the input signal. Resistors average source voltages of the transconductance-cancelling transconductors to provide an average source voltage and apply the average source voltage to wells of input devices of the transconductance-cancelling transconductors to reduce back bias effect. The input devices are laid out in a same well and have a common centroid to cancel out process mismatches. A first I-DAC trims an offset of first transconductors, and a second I-DAC trims an offset of second transconductors to attain low offsets across a rail-to-rail input common mode range.

The embodiments herein describe technologies of an amplifier circuit that is designed for wideband communication with superconductive components in cryogenic applications, including Josephson Junction integrated circuits, operating in a cryogenic temperature domain (e.g., 4K). The amplifier circuit operates in a temperature domain (e.g., 77K) that is higher than the cryogenic temperature domain of the superconductive components.

An operational amplifier integrated circuit includes a differential pair of transistors having a first input, a second input. A bias current generator applies a bias current to an output of the differential pair of transistors. A control loop generates a control voltage arising from a difference in potentials between the first input and the second input. An additional current that is added to the bias current is generated in response to the control voltage.

A power amplifier circuit for broadband data communication over a path in a communication network can reduce or avoid gain compression, provide low distortion amplification performance, and can accommodate a wider input signal amplitude range. A dynamic variable bias current circuit can be coupled to a common emitter bias node of a differential pair of transistors to provide a dynamic variable bias current thereto as a function of an input signal amplitude of an input signal. Bias current is increased when input signal amplitude exceeds a threshold voltage established by an offset or level-shifting circuit. The frequency response of the bias current circuit can track the frequency content of the input signal. A delay in the signal path to the differential pair can phase-align the bias current to the amplification by the differential pair. A dynamic variable supply voltage can be based on an envelope of the input signal.

A bias circuit for a PA. A first transistor has its drain terminal and its gate terminal connected to a first circuit node and its source terminal connected to a first supply terminal, a first current source connected to the first circuit node, and a first resistor connected between the first and second circuit nodes. A second transistor receives a first component of a differential input signal to the PA at its gate terminal, has its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal, and a third transistor receives a second component of the differential input signal to the PA at its gate terminal, having its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal. The gates terminals of the second and the third transistors are biased by a first voltage.

Circuits and methods for adjusting one or more operation parameters of a semiconductor device. One example of a circuit includes a first semiconductor device, a beta sensing circuit coupled to the first semiconductor device and configured to measure a current gain of the first semiconductor device and generate a first control signal based on a value of the current gain of the first semiconductor device, and a reference control circuit coupled to the beta sensing circuit and configured to receive the first control signal and adjust an operation parameter of the first semiconductor device based on the value of the current gain of the first semiconductor device.

The embodiments herein describe technologies of an amplifier circuit that is designed for wideband communication with superconductive components in cryogenic applications, including Josephson Junction integrated circuits, operating in a cryogenic temperature domain (e.g., 4K). The amplifier circuit operates in a temperature domain (e.g., 77K) that is higher than the cryogenic temperature domain of the superconductive components.

An optical modulator driver circuit (1) includes an amplifier (50, Q10, Q11, R10-R13), and a current amount adjustment circuit (51) capable of adjusting a current amount of the amplifier (50) in accordance with a desired operation mode. The current amount adjustment circuit (51) includes at least two current sources (IS10) that are individually ON/OFF-controllable in accordance with a binary control signal representing the desired operation mode.

A bias circuit for a PA. A first transistor has its drain terminal and its gate terminal connected to a first circuit node and its source terminal connected to a first supply terminal, a first current source connected to the first circuit node, and a first resistor connected between the first and second circuit nodes. A second transistor receives a first component of a differential input signal to the PA at its gate terminal, has its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal, and a third transistor receives a second component of the differential input signal to the PA at its gate terminal, having its drain terminal connected to the second circuit node and its source terminal connected to a second supply terminal. The gates terminals of the second and third transistors are biased by a first voltage.