H03H2009/02307

Piezo-actuated MEMS resonator

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

HIGH-QUALITY-FACTOR FLEXURAL-VIBRATION RESONATOR FOR PRODUCING TIME REFERENCES, FORCE SENSORS OR GYROMETERS
20240133691 · 2024-04-25 ·

A resonator is suitable for reducing or suppressing a force transmitted by a vibrating portion of the resonator to a support part. To this end, the vibrating portion includes two extensions which are each meander shaped such that two segments of each extension have respective speed components that are oriented in opposite directions. Such a resonator, which is balanced, can advantageously be used within a rate gyro or a force sensor.

Piezo-actuated MEMS Resonator

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

Temperature-engineered MEMS resonator

Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.

PIEZO-ACTUATED MEMS RESONATOR WITH SURFACE ELECTRODES

A microelectromechanical system (MEMS) resonator includes a degenerately-doped single-crystal silicon layer and a piezoelectric material layer disposed on the degenerately-doped single-crystal silicon layer. An electrically-conductive material layer is disposed on the piezoelectric material layer opposite the degenerately-doped single-crystal silicon layer, and patterned to form first and second electrodes.

MICROELECTRONIC STRUCTURE COMPRISING MEANS OF CONTROL OF VISCOUS DAMPING

Microelectronic structure comprising a mobile mass mechanically linked to a first and to a second mechanical element by first and second mechanical linking device respectively, a polarisation source for the second mechanical linking device. The second mechanical linking means comprises two linking elements and a thermal reservoir placed between the linking elements, where at least one of the linking elements is made of piezoresistive material, where at least one of the first and second linking elements exhibit thermoelasticity properties. The thermal reservoir exhibits a thermal capacity which is different from those of the linking elements. The second linking device and the mobile mass are arranged relative to each other such that displacement of the mobile mass applies a mechanical stress to the second linking means.

Semiconductor device, a micro-electro-mechanical resonator and a method for manufacturing a semiconductor device

A semiconductor device includes a silicon substrate layer with a decoupling region. The decoupling region of the silicon substrate layer comprises an array of lamellas laterally spaced apart from each other by cavities. Each lamella of the array of lamellas comprises at least 20% silicon dioxide.

Compound spring MEMS resonators for frequency and timing generation
09923545 · 2018-03-20 · ·

A compound spring MEMS resonator includes a resonator body constructed using one or more spring unit cells forming a compound spring block and one or more compound spring blocks forming the resonator body. Each compound spring block is anchored at nodal points to ensure a high quality factor. The resonator body further includes masses attached to the open ends of the compound spring block and capacitively coupled to drive/sense electrodes. The dimensions of the spring unit cells, the number of spring unit cells for a compound spring block, the size and weight of the masses, and the length and width of the support beams are selected to realize a desired resonant frequency. Meanwhile, the number of compound spring blocks is selected to tune the desired electrical characteristics, such as impedance, of the MEMS resonator.

TEMPERATURE-ENGINEERED MEMS RESONATOR

Degenerately doped semiconductor materials are deployed within resonant structures to control the first and higher order temperature coefficients of frequency, thereby enabling temperature dependence to be engineered without need for cumulative material layers which tend to drive up cost and compromise resonator performance.

Multiple coil spring MEMS resonator

A multiple coil spring MEMS resonator includes a center anchor and a resonator body including two or more coil springs extending in a spiral pattern from the center anchor to an outer closed ring. Each pair of coil springs originates from opposing points on the center anchor and extends in the spiral pattern to opposing points on the outer ring. The number of coil springs, the length and the width of the coil springs and the weight of the outer ring are selected to realize a desired resonant frequency.