A surface acoustic wave device includes a substrate that has a top surface and that contains a plurality of protrusions protruding from the top surface and spaced apart from each other, an intermediate layer disposed on the substrate so as to fill a recess formed among the protrusions, a piezoelectric layer disposed on the intermediate layer opposite to the substrate, and an electrode layer disposed on the piezoelectric layer opposite to the intermediate layer.

An elastic wave element having a piezoelectric substrate equipped with a first main surface, and an excitation electrode arranged on the first main surface and having multiple electrode fingers, wherein, in a cross-sectional view in the direction orthogonal to the first main surface, the width of the electrode fingers at a first height at a distance from the first main surface is greater than the width at a second height located closest to the first main surface.

An acoustic wave element of the present disclosures has a piezoelectric substrate and an acoustic wave resonator S1 on a main surface of the piezoelectric substrate. The acoustic wave resonator S1 is one being divided into a first IDT electrode and a second IDT electrode which are electrically connected to the first IDT electrode. The first IDT electrode includes a first comb-shaped electrode on the signal input side and a second comb-shaped electrode on the signal output side. The second IDT electrode includes a third comb-shaped electrode on the signal input side and a fourth comb-shaped electrode on the signal output side. The direction of arrangement of the third comb-shaped electrode and the fourth comb-shaped electrode from the third comb-shaped electrode toward the fourth comb-shaped electrode is different from the direction of arrangement from the first comb-shaped electrode toward the second comb-shaped electrode.

A multiplexer device includes a single die, at least three acoustic filters and at least one antenna port arranged on the single die, and a shunt inductance connected between each of the at least one antenna port and ground. Each acoustic filter includes one of a transmit or receive filter corresponding to a predetermined radio frequency band. The at least one antenna port is connected to at least one antenna, respectively, where each of the at least one antenna port is further connected to at least one acoustic filter arranged on the single die, and is configured to pass RF signals corresponding to the predetermined RF band of the connected at least one acoustic filter. The shunt inductance provides impedance matching between each of the at least one antenna port and each of the at least one acoustic filter connect to the at least one antenna port.

A surface acoustic wave resonator arrangement comprises a piezoelectric substrate (100) and a surface acoustic wave resonator (110) which includes an interdigital transducer (111,112) disposed on the piezoelectric substrate (100). A trench (13 0) is disposed within the piezoelectric substrate (100) facing the resonator (110). Trench (130) causes reflected waves (143,144) in response to waves (141,142) leaking from the surface acoustic wave resonator. Trench (130) is configured such that the reflected acoustic waves (143,144) achieve phases at the edge (115) of the resonator (110) such that the accumulated phases of all the reflected waves received at edge (115) is zero or substantially zero, thereby avoiding constructive interference of the reflected waves with the acoustic waves resonating in the resonator. Thereby undesired acoustic coupling between resonators or influence of waves reflected at edges of the piezoelectric substrate or dicing lines is reduced.

An acoustic wave device includes: a piezoelectric substrate: a pair of comb-shaped electrodes located on the piezoelectric substrate, each of the comb-shaped electrodes including a plurality of electrode fingers; a support substrate having protruding portions and/or recessed portions in a region overlapping with the pair of comb-shaped electrodes in plan view, the protruding portions and/or recessed portions being regularly arranged; and an insulating layer directly or indirectly bonded between the piezoelectric substrate and the support substrate, a boundary face between the insulating layer and the support substrate being provided along the protruding portions and/or the recessed portions.

The present disclosure provides an acoustic resonator device, among other things. One example of the disclosed acoustic resonator device includes a substrate having a carrier layer, a first layer disposed over the carrier layer, and a piezoelectric layer disposed over the first layer. The acoustic resonator device is also disclosed to include an interdigitated metal disposed over the piezoelectric layer, where the interdigitated metal is configured to generate acoustic waves within an acoustically active region. The acoustic resonator device is further disclosed to include an acoustic wave scattering structure.

An acoustic wave device includes a support substrate, a piezoelectric body, an acoustic layer laminate, first and second electrodes, and a lead-out electrode. The first electrode is on a first main surface of the piezoelectric body, the second electrode is on a second main surface of the piezoelectric body, the lead-out electrode is on the first main surface or the second main surface of the piezoelectric body, the lead-out electrode is electrically connected to the first electrode or the second electrode, side surface grooves extend from the first main surface side of the piezoelectric body, and the side surface grooves are provided in at least a portion of a remaining portion excluding a portion provided with the lead-out electrode from a region in an outer side portion of at least one of the first electrode and the second electrode.

Embodiments of this disclosure relate to reducing coupling between acoustic wave resonators. An isolation region of a substrate can be located between acoustic wave resonators. The isolation region can reduce capacitive coupling through the substrate between the acoustic wave resonators. In certain embodiments, the isolation region can be located between acoustic wave resonators of different filters to thereby increase isolation between the filters.

Embodiments of this disclosure relate to methods of manufacturing acoustic wave components that include acoustic wave resonators that share a substrate. Laser light can be applied to alter a region of the substrate that is located between two of the acoustic wave resonators. Altering the region with laser light can reduce coupling between the two acoustic resonators through the substrate. The substrate can be monolithic after laser the light is applied.