In some examples, a controller is configured to control a power switch electrically connected in series with a winding. In some examples, the controller is also configured to control a pass switch electrically connected between an output node of the winding and a bus out node. In some examples, the controller includes a current source configured to selectively drive a charging current from an intermediate node between the power switch and the winding to a control terminal of the pass switch to turn on the pass switch.

Some embodiments include a high voltage, high frequency switching circuit. In some embodiments, the high voltage, high frequency switching circuit includes a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz; a transformer having a primary side and secondary side; an output electrically coupled with the secondary side of the transformer; and a primary sink electrically coupled with the primary side of the transformer and in parallel with the high voltage switching power supply, the primary sink comprising at least one resistor that discharges a load coupled with the output.

Some embodiments include a high voltage, high frequency switching circuit. In some embodiments, the high voltage, high frequency switching circuit includes a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz; a transformer having a primary side and secondary side; an output electrically coupled with the secondary side of the transformer; and a primary sink electrically coupled with the primary side of the transformer and in parallel with the high voltage switching power supply, the primary sink comprising at least one resistor that discharges a load coupled with the output.

Some embodiments include a high voltage, high frequency switching circuit. In some embodiments, the high voltage, high frequency switching circuit includes a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz; a transformer having a primary side and secondary side; an output electrically coupled with the secondary side of the transformer; and a primary sink electrically coupled with the primary side of the transformer and in parallel with the high voltage switching power supply, the primary sink comprising at least one resistor that discharges a load coupled with the output.

Some embodiments include a high voltage, high frequency switching circuit. In some embodiments, the high voltage, high frequency switching circuit includes a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz; a transformer having a primary side and secondary side; an output electrically coupled with the secondary side of the transformer; and a primary sink electrically coupled with the primary side of the transformer and in parallel with the high voltage switching power supply, the primary sink comprising at least one resistor that discharges a load coupled with the output.

Power electronics circuitry has a pair of parallel power semiconductors each including a gate and a current sensor, a first differential mode choke defining a portion of a gate path connecting the gates, a second differential mode choke defining a portion of a sensor path connecting the current sensors, and a gate driver tapping the gate and current sensor paths.

Power electronics circuitry has a pair of parallel power semiconductors each including a gate and a current sensor, a first differential mode choke defining a portion of a gate path connecting the gates, a second differential mode choke defining a portion of a sensor path connecting the current sensors, and a gate driver tapping the gate and current sensor paths.

An insulating gate semiconductor device includes an insulating gate semiconductor element, an insulating circuit board, and a main-current path member. A main-current of the insulating gate semiconductor element flows toward a first external terminal in the main-current path member; and a gate-current path member, being patterned so as to have a linearly extending portion arranged in parallel to a linearly extending portion of the main-current path member in a planar pattern on the insulating circuit board, being provided to connect between a second external terminal and a gate electrode of the insulating gate semiconductor element. A current which is induced in the gate-current path member by mutual induction caused by a change in magnetic field implemented by the main-current is used for increasing the gate-current in a turn-on period of the insulating gate semiconductor element.

A switching circuit includes a first switch; a second switch connected in series with the first switch; a first isolated driver connected to a gate terminal of the first switch; a second isolated driver connected to a gate terminal of the second switch; and a transformer including a primary winding connected to an auxiliary power supply, a first secondary winding to supply a first voltage to the first isolated driver, and a second secondary winding to supply a second voltage to the second isolated driver.

A switching circuit includes a first switch; a second switch connected in series with the first switch; a first isolated driver connected to a gate terminal of the first switch; a second isolated driver connected to a gate terminal of the second switch; and a transformer including a primary winding connected to an auxiliary power supply, a first secondary winding to supply a first voltage to the first isolated driver, and a second secondary winding to supply a second voltage to the second isolated driver.