The wireless voltage link uses a coil to induce voltage onto a transistor. By controlling the amount of the current that flows through the coil, one is able to control the strength of the magnetic field emitted by the inductor. And by controlling the q-point of the transistor, the amount voltage and current induced, the transistor can then be used as a switch or an amplifier without any electrical/electronic connection to the internal coil. The use of a transistor enables high speed switching and potential amplification of communication signals.

The present disclosure relates to a reactive power compensation system includes a first measurement unit, a second measurement unit, a reactive power compensation unit, and a controller. The first measurement unit measures impedance of each of at least one load. The second measurement unit measures a voltage and current provided to the at least one load. The reactive power compensation unit compensates the leading reactive power or the lagging reactive power. The controller monitors a change of the impedance in real time, checks a change of the voltage or current according to the change of the impedance, and controls the reactive power compensation unit according to a result of the check to compensate the leading reactive power or the lagging reactive power.

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The present disclosure relates to a reactive power compensation system includes a first measurement unit, a second measurement unit, a reactive power compensation unit, and a controller. The first measurement unit measures impedance of each of at least one load. The second measurement unit measures a voltage and current provided to the at least one load. The reactive power compensation unit compensates the leading reactive power or the lagging reactive power. The controller monitors a change of the impedance in real time, checks a change of the voltage or current according to the change of the impedance, and controls the reactive power compensation unit according to a result of the check to compensate the leading reactive power or the lagging reactive power.

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A monolithically integrated bidirectional switch includes: an output terminal; a control terminal; a compound semiconductor substrate; a common drift region in the compound semiconductor substrate and in series between the input terminal and the output terminal; a first gate; and a second gate. The first gate is electrically connected to the control terminal and the second gate is electrically connected to the input terminal, or one of the first gate and the second gate is a normally-on gate and the other one of the first gate and the second gate is a normally-off gate. In either case, the monolithically integrated bidirectional switch is configured to conduct current in a single direction from the input terminal to the output terminal through the common drift region. A corresponding power electronic system that uses the monolithically integrated bidirectional switch is also described.

A power switching device includes a primary power source, a backup power source, and a power switching circuit, and the power switching circuit can switch rapidly between the two or more power sources. The power switching circuit includes a first switching module, a second switching module, and a control module. The first switching module includes first through fourth relays, and first through fourth driving units. The first switching module also includes a first bidirectional thyristor and a second bidirectional thyristor. A power switching circuit is also provided.

A power switching device includes a primary power source, a backup power source, and a power switching circuit, and the power switching circuit can switch rapidly between the two or more power sources. The power switching circuit includes a first switching module, a second switching module, and a control module. The first switching module includes first through fourth relays, and first through fourth driving units. The first switching module also includes a first bidirectional thyristor and a second bidirectional thyristor. A power switching circuit is also provided.

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

A static transfer switch is provided for supplying power to a load alternately from two different power sources. Switching between the two power sources may occur within a fraction of one electrical cycle. In response to sensing degraded performance in the power source supplying the load, resonant turn off circuits connected directly to the main switches of two phases of the power source are actuated to commutate the respective main switches. The main switch of the third phase is commutated with one or more of the resonant turn off circuits through the delta side of a transformer connected to the three phases of the power source.

A static transfer switch is provided for supplying power to a load alternately from two different power sources. Switching between the two power sources may occur within a fraction of one electrical cycle. In response to sensing degraded performance in the power source supplying the load, resonant turn off circuits connected directly to the main switches of two phases of the power source are actuated to commutate the respective main switches. The main switch of the third phase is commutated with one or more of the resonant turn off circuits through the delta side of a transformer connected to the three phases of the power source.