According to one embodiment, in a semiconductor device, the first pull-up circuit is connected to a third node and to a fourth node. The third node is a node between a drain of the first transistor with a first conductivity type and a source of the second transistor with the first conductivity type. The fourth node is a node between a drain of the third transistor with the first conductivity type, and a source of the fourth transistor with the first conductivity type and a source of the fifth transistor with the first conductivity type. The first pull-down circuit is connected to a fifth node and to a sixth node. The fifth node is a node between a drain of the first transistor with a second conductivity type and a source of the second transistor with the second conductivity type. The sixth node is a node between a drain of the third transistor with the second conductivity type and a source of the fourth transistor with the second conductivity type and a source of the fifth transistor with the second conductivity type.

According to one embodiment, in a semiconductor device, the first pull-up circuit is connected to a third node and to a fourth node. The third node is a node between a drain of the first transistor with a first conductivity type and a source of the second transistor with the first conductivity type. The fourth node is a node between a drain of the third transistor with the first conductivity type, and a source of the fourth transistor with the first conductivity type and a source of the fifth transistor with the first conductivity type. The first pull-down circuit is connected to a fifth node and to a sixth node. The fifth node is a node between a drain of the first transistor with a second conductivity type and a source of the second transistor with the second conductivity type. The sixth node is a node between a drain of the third transistor with the second conductivity type and a source of the fourth transistor with the second conductivity type and a source of the fifth transistor with the second conductivity type.

A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

A write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

An analog multiplexer core circuit (120A) includes a differential pair (121) that includes two transistors (Q1, Q2), a differential pair (122) that includes two transistors (Q3, Q4), a differential pair (123) that includes two transistors (Q5, Q6), and a constant current source (124) that causes a current (I.sub.EE) to flow. This analog multiplexer core circuit (120A) time-multiplexes two analog signals (Ain1, Ain2) and outputs a time-multiplexed analog signal (Aout). Each emitter resistor (R.sub.EA1, R.sub.EA2, R.sub.EA3, R.sub.EA4) is connected to a corresponding one of the transistors (Q1, Q2, Q3, Q4). At this time, a relation of R.sub.EA.Math.I.sub.EEthe amplitude of an input analog signal is satisfied. As a result, linearity of response can be ensured by expanding the linear response input range of the differential pairs (121, 122).

An analog multiplexer core circuit (120A) includes a differential pair (121) that includes two transistors (Q1, Q2), a differential pair (122) that includes two transistors (Q3, Q4), a differential pair (123) that includes two transistors (Q5, Q6), and a constant current source (124) that causes a current (I.sub.EE) to flow. This analog multiplexer core circuit (120A) time-multiplexes two analog signals (Ain1, Ain2) and outputs a time-multiplexed analog signal (Aout). Each emitter resistor (R.sub.EA1, R.sub.EA2, R.sub.EA3, R.sub.EA4) is connected to a corresponding one of the transistors (Q1, Q2, Q3, Q4). At this time, a relation of R.sub.EA.Math.I.sub.EEthe amplitude of an input analog signal is satisfied. As a result, linearity of response can be ensured by expanding the linear response input range of the differential pairs (121, 122).

The present disclosure describes embodiments of a write assist circuit. The write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

A data communication system has a first data communication circuit for outputting a clock signal to a clock signal line, receiving data input from a data signal line, and outputting data as open drain output to the data signal line, a second data communication circuit for receiving input of a clock signal from the clock signal line, receiving input of data from the data signal line, and outputting data as open drain output to the data signal line, a first pull-up resistor connected between the data signal line and the wiring of a power supply potential, a second pull-up resistor for selectively pulling up the data signal line, and a pull-up control circuit that is connected to the second pull-up resistor, and strengthens pull-up of the data signal line at least in response to a clock signal.

The present disclosure describes embodiments of a write assist circuit. The write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

An analog multiplexer core circuit (120A) includes a differential pair (121) that includes two transistors (Q1, Q2), a differential pair (122) that includes two transistors (Q3, Q4), a differential pair (123) that includes two transistors (Q5, Q6), and a constant current source (124) that causes a current (I.sub.EE) to flow. This analog multiplexer core circuit (120A) time-multiplexes two analog signals (Ain1, Ain2) and outputs a time-multiplexed analog signal (Aout). Each emitter resistor (R.sub.EA1, R.sub.EA2, R.sub.EA3, R.sub.EA4) is connected to a corresponding one of the transistors (Q1, Q2, Q3, Q4). At this time, a relation of R.sub.EA.Math.I.sub.EEthe amplitude of an input analog signal is satisfied. As a result, linearity of response can be ensured by expanding the linear response input range of the differential pairs (121, 122).