An oscillating sensor device, particularly for a proximity sensor, for sensing a dynamic change of attenuation caused by a measurable physical effect includes an oscillator including a resonance circuit and an amplifier fed back to the resonance circuit and configured to maintain oscillation of the oscillator, and a control unit configured to control the open loop gain of the oscillator. The amplifier comprises a non-linear gain characteristics defining an operating point at a preset amplitude of oscillation. The control unit is configured to control the open loop gain of the oscillator so that the operating point is set to a preset amplitude of the oscillation.

An inductive sensor includes a core body, a coil wound on the core body, a cavity having a fixed volume within the core body, and an epoxy mixture filling a controlled portion of the fixed volume. The controlled portion of the fixed volume filled with the epoxy mixture controls an inductance of the sensor.

The present disclosure relates to circuitry for biasing a sensor comprising: a bias generator module configured to receive a supply voltage and to generate a bias voltage for biasing the sensor. The circuitry further comprises a control module configured to compare a voltage indicative of the supply voltage to a threshold voltage and to output a control signal to the bias generator module based on the comparison. The bias generator module is configured to control the bias voltage based on the control signal.

A method for fabricating a semiconductor die is provided. The method can include providing a semiconductor substrate, forming a set of field-effect transistors on the semiconductor substrate, each field-effect transistor in the set of field-effect transistors having a respective source, drain, gate, and body, forming a compensation circuit on the semiconductor substrate, and connecting the compensation circuit to the set of field-effect transistors in parallel, the compensation circuit configured to compensate a non-linearity effect generated by the set of field-effect transistors.

Electrodes and regions of top plate opposed to electrodes constitute switches that have capacitances varying when the regions of top plate are depressed from top plate toward electrodes. Depression detection circuit calculates the capacitance change amounts of switches indicating changes of the capacitances from a reference value. Depression detection circuit calculates the maximum value and sum of the capacitance change amounts of switches. When the capacitance change amount of at least one switch exceeds threshold and a situation in which the ratio of the maximum value to the sum is equal to or greater than threshold has lasted for the number of repetitions in, depression detection circuit determines that the switch having the maximum value of the capacitance change amount is in a depressed state.

A Bluetooth headset combined with antenna and touch sensor, which integrates a sensing touch member inside a button of the Bluetooth headset with a Bluetooth antenna. The antenna element with touch function increases the density of the earphone component, in addition to the waterproof improvement, and the Bluetooth antenna is set near the external position of the Bluetooth headset, which makes the audio signal transmission effect clearer. Further, a first touch matching circuit, a second touch matching circuit and a changeover switch are electrically connected between the antenna element and the touch sensing module. When the signal of the antenna element is blocked, the changeover switch automatically switches between the first touch matching circuit and the second touch matching circuit to perform frequency adjustment and selects the better signal of the first or second touch matching circuit to do a circuit matching.

An information handling system transceiver adjusts power levels for transmitting wireless signals to maintain specific absorption constraints by estimating the type of material proximate an antenna and applying the estimated material to adjust transmit power levels. When the capacitive response of an object in proximity to the antenna indicates an inanimate object, such as a desktop surface or a portion of a housing, the power level may be maintained at a high setting and remain within specific absorption constraints.

An input apparatus includes a detection unit that repeatedly generates a detection signal according to a degree of proximity of the object, a drift simulation unit that generates a drift simulated signal that undergoes a change having correlation with a drift in the detection signal due to repeated generation of the detection signal in the detection unit, and a correction unit that corrects the detection signal according to the change in the drift simulated signal at least one of when repeated generation of the detection signal in the detection unit is started and when an interval for repeatedly generating the detection signal in the detection unit is changed.

An information handling system transceiver adjusts power levels for transmitting wireless signals to maintain specific absorption constraints by estimating the type of material proximate an antenna and applying the estimated material to adjust transmit power levels. When the capacitive response of an object in proximity to the antenna indicates an inanimate object, such as a desktop surface or a portion of a housing, the power level may be maintained at a high setting and remain within specific absorption constraints.

A system includes: a power supply; an adaptively biased power event detection comparator; and an adaptive bias circuit for the adaptively biased power event detection comparator. The adaptively biased power event detection comparator is configured to compare a first input corresponding to a voltage level of the power supply with a second input corresponding to a reference voltage. The adaptive bias circuit is configured to increase a bias current for the adaptively biased power event detection comparator based on the voltage level of the power supply decreasing to be closer to the reference voltage.