The present disclosure generally pertains to image sensor control circuitry for event-based controlling of an image sensor, the image sensor control circuitry being configured to: obtain events from a plurality of event-based vision elements of an event-based vision sensor; determine event groups based on an event-detection property; and generate an imaging control signal for controlling the imaging elements of the image sensor based on the event groups, for imaging with imaging element groups corresponding to the event groups.

An event-driven sensor including: a pixel array; a column readout circuit coupled to column output lines of the pixel array, the column readout circuit comprising a plurality of groups of column register cells coupled in series with each other to propagate a first flag signal, wherein each column register cell is configured to activate a column event output signal when it receives the first flag signal while the detection of an event is indicated on the column output line; and a first bypassing circuit for each group of column register cells, the first bypassing circuits being coupled in series with each other to propagate the first flag signal.

An imaging apparatus (100, 300) comprising: an optical encoder (150, 350) configured to provide an encoded image of an object (110) with at least one mask pattern; a rotating mirror (170) configured to receive and project said encoded image; and an image sensor (180) configured to receive said encoded; wherein, said rotating mirror (170) is operable such that a plurality of encoded images, which are individually projected by said rotating mirror (170) are spatially shifted as a result of rotation of said rotating mirror (170), are swept across said image sensor (180).

An imaging apparatus (100, 300) comprising: an optical encoder (150, 350) configured to provide an encoded image of an object (110) with at least one mask pattern; a rotating mirror (170) configured to receive and project said encoded image; and an image sensor (180) configured to receive said encoded; wherein, said rotating mirror (170) is operable such that a plurality of encoded images, which are individually projected by said rotating mirror (170) are spatially shifted as a result of rotation of said rotating mirror (170), are swept across said image sensor (180).

An event sensing system includes a pixel array including a plurality of event driven pixel circuits configured to be illuminated by incident light. The event driven pixel circuits are configured to generate an event current in response to a detection of an event in the incident light. Output signals of a row of the pixel array are configured to be read out from the row of the pixel array to a line buffer in response to the detection of the event in the incident light. A random number generator is configured to randomly generate a filtering mask. A mask circuit is the output signals of the row of the pixel array from the line buffer and the filtering mask from the random number generator to filter the output signals of the row of the pixel array in response to the filtering mask.

In a solid state imaging element in which whether or not an address event has occurred is detected, the circuit area in each pixel is reduced.

A driving circuit supplies a prescribed reference signal the level of which gradually fluctuates with lapse of time. A plurality of pixels each includes an auto-zero transistor and a reset control section. The auto-zero transistor initializes a change amount acquisition section for obtaining a brightness change amount. The reset control section switches the auto-zero transistor by using the reference signal in a case where a prescribed address event has occurred.

An imaging device including: a first imaging cell including a first photoelectric converter that generates a first signal; and a second imaging cell including: a second photoelectric converter that generates a second signal; and a capacitor having a first and second terminal, the first terminal electrically coupled to second photoelectric converter. An area of the first photoelectric converter is greater than an area of the second photoelectric converter in a plan view, the first imaging cell has a first number of saturation charges, and the second imaging cell has a second number of saturation charges, the first number of saturation charges is greater than the second number of saturation charges, and the capacitor has capacitance that causes the second number of saturation charges of the second imaging cell to become greater than the first number of saturation charges of the first imaging cell.

The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

The present disclosure relates to a solid-state imaging device and an electronic device that can be provided with phase difference pixels with a lower degree of difficulty in manufacturing.

Provided is a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, in which the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed, and among the plurality of pixel groups arrayed in the array pattern, pixels configuring a light-shielded pixel group are shielded in an identical direction side from light, the light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light. The present technology can be applied to, for example, a CMOS image sensor including pixels for phase difference detection.

The present disclosure provides an imaging device capable of outputting a signal other than an event detection signal, such as a pixel signal at a gradation level. The imaging device has a stacked chip structure formed by stacking at least two semiconductor chips including a first-layer semiconductor chip and a second-layer semiconductor chip. The first-layer semiconductor chip has a pixel array unit in which an event pixel that outputs an event detection signal, and a distance measurement pixel are mixed. The second-layer semiconductor chip is provided with an analog front-end unit for an event pixel that processes the event detection signal and with an analog front-end unit for a distance measurement pixel that processes the signal from the light-receiving element, corresponding to each of the event pixel and the distance measurement pixel.