A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

A radiographic imaging device includes: a radiation detector including plural pixels, each including a sensor portion and a switching element; a detection unit that detects a radiation irradiation start if an electrical signal caused by charges generated in the sensor portion satisfies a specific irradiation detection condition, and/or if an electrical signal caused by charges generated in a radiation sensor portion that is different from the sensor portion satisfies a specific irradiation detection condition; and a control unit that determines whether or not noise caused by external disturbance has occurred after the detection unit has detected the radiation irradiation start, and if the noise has occurred, that stops a current operation of the radiation detector, and causes the detection unit to perform detection.

The disclosure extends to methods, systems, and computer program products for producing an image in light deficient environments with luminance and chrominance emitted from a controlled light source.

Systems and methods for high dynamic range imaging using array cameras in accordance with embodiments of the invention are disclosed. In one embodiment of the invention, a method of generating a high dynamic range image using an array camera includes defining at least two subsets of active cameras, determining image capture settings for each subset of active cameras, where the image capture settings include at least two exposure settings, configuring the active cameras using the determined image capture settings for each subset, capturing image data using the active cameras, synthesizing an image for each of the at least two subset of active cameras using the captured image data, and generating a high dynamic range image using the synthesized images.

The invention relates to medical imaging and, more specifically, to intraoral dental radiology. The sensor according to the invention includes a series (SPHx) of detection photodiodes for detecting the arrival of an X-ray flash. The series of photodiodes occupies the location of a central column of the matrix of pixels. The signal of the missing pixel in each row can be reconstructed by interpolating the signals provided by the adjacent pixels of the row. The detection photodiodes are identical to the photodiodes of the active CMOS pixels. They are all electrically connected on one side to a reference potential and on the other side to a detection conductor (CD) extending along the series of photodiodes. This detection conductor is connected to a detection circuit (DX) delivering a signal for triggering the capture of an image when the detected current or the variation in this current exceeds a threshold showing that an X-ray flash has been initiated.

The present disclosure relates to a comparator, an AD converter, a solid-state image pickup device, an electronic device, a method of controlling the comparator, a data writing circuit, a data reading circuit, and a data transferring circuit, capable of improving the determining speed of the comparator and reducing power consumption. The comparator includes: a differential input circuit configured to operate with a first power supply voltage, the differential input circuit configured to output a signal when an input signal is higher than a reference signal in voltage; a positive feedback circuit configured to operate with a second power supply voltage lower than the first power supply voltage, the positive feedback circuit being configured to accelerate transition speed when a compared result signal indicating a compared result between the input signal and the reference signal in voltage, is inverted, on the basis of the output signal of the differential input circuit; and a voltage conversion circuit configured to convert the output signal of the differential input circuit into a signal corresponding to the second power supply voltage. The present disclosure can be applied to, for example, a comparator of a solid-state image pickup device.

There is provided a solid-state imaging device including: a pixel array unit, a plurality of pixels being two-dimensionally arranged in the pixel array unit, a plurality of photoelectric conversion devices being formed with respect to one on-chip lens in each of the plurality of pixels, a part of at least one of an inter-pixel separation unit formed between the plurality of pixels and an inter-pixel light blocking unit formed between the plurality of pixels protruding toward a center of the corresponding pixel in a projecting shape to form a projection portion.

An imaging element (100) includes a pixel array (110) in which pixels (130) are placed in a two-dimensional array, the pixel including a photoelectric conversion element; and a polarization-wavelength separation lens array (120) opposed to the pixel array (110), the polarization-wavelength separation lens array (120) including polarization-wavelength separation lens (160) placed in a two-dimensional array, the polarization-wavelength separation lens (160) including a plurality of microstructures for condensing incident light at different positions on the pixel array (110) according to the polarization direction and wavelength components of the incident light.

An imaging device according to an embodiment includes: a plurality of pixels (110) each including a photoelectric conversion element (20) and arranged in an array of matrix; a control line group (16) including a plurality of control lines for controlling each of pixels aligned in a row direction, each arranged in each of rows of the array; and a plurality of reading lines (VSL) arranged in each of columns for transferring a pixel signal read from each of pixels aligned in a column direction of the array, wherein the plurality of pixels includes: a first pixel (110GS) controlled by a control signal supplied from a first control line group including control lines in a first number among a plurality of control lines included in the control line group in each of pixels aligned in the row direction in at least one of rows of the array; and a second pixel (110RS) controlled by a control signal supplied from a second control line group including a control line in a second number smaller than the first number among a plurality of control lines included in the control line group.

A decrease in sensitivity of distance measurement is reduced. A light receiving element includes a first voltage application unit and a second voltage application unit, a first charge detection unit, and a second charge detection unit. The first voltage application unit and the second voltage application unit are configured in linear shapes extending in the same direction on the surface of the semiconductor substrate that performs photoelectric conversion of the incident light, are arranged apart from each other, and are provided with proximity portions and applied with different voltages. The first charge detection unit is arranged around the first voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion. The second charge detection unit is arranged around the second voltage application unit on the surface of the semiconductor substrate and detects a charge generated by photoelectric conversion.