Provided are a solid-state imaging device, a method for driving a solid-state imaging device, and an electronic apparatus capable of reading signals produced with different conversion gains and having different signal directions.

A pixel signal processing part 400 includes a first reading part 410 and a second reading part 420. Of a pixel signal PIXOUT input into an input node ND401, the first reading part 410 inverts the signal direction of a first-conversion-gain signal (HCGRST, HCGSIG) and outputs an inverted first-conversion-gain signal (HCGRST, HCGSIG), which has been subjected to inversion and amplification, to an AD converting part 430 via a connection node ND402. Of the pixel signal PIXOUT input into the input node ND401, the second reading part 420 keeps the signal direction of a second-conversion-gain signal (LCGSIG, LCGRST) unchanged, and outputs a non-inverted second-conversion-gain signal (LCGSIG, LCGRST) to the AD converting part 430 via the connection node ND402.

An image sensing device includes a photoelectric element configured to generate an electric charge in response to light; first and second floating diffusions configured to store the electric charge; a transfer gate having a first end connected to the photoelectric element and a second end connected to the first floating diffusion; a reset transistor configured to reset voltages of the first and second floating diffusions based on a reset signal; a first dual conversion gain (DCG) transistor having a first end connected to the first floating diffusion and a second end connected to the second floating diffusion; first and second pixel circuits configured to generate first and second output voltages based on the first and second floating diffusions; and first and second analog to digital converters configured to receive the first and second output voltages and convert them to first and second digital signals.

In an imaging device, a photoelectric converter of a first pixel and a photoelectric converter of a second pixel are arranged along a first direction. At least part of a charge accumulation portion of the first pixel is disposed between the photoelectric converter of the first pixel and the photoelectric converter of the second pixel. An exit surface of a light guiding path of the first pixel is longer in a second direction orthogonal to the first direction in plan view than in the first direction.

An image processing method, an electronic device and a storage medium. The method includes: under a preset condition, when detecting that an image currently captured by a camera module contains a human face, determining a reference photosensitivity corresponding to each frame of images to be captured according to a current jitter degree of the camera module; determining an exposure duration corresponding to each frame of images to be captured according to luminance of a current shooting scene, the reference photosensitivity corresponding to each frame of the images to be captured, and a preset mode of exposure compensation; capturing a plurality of frames of images in sequence according to the reference photosensitivity and the exposure duration corresponding to each frame of the images to be captured; and performing synthesis processing on the captured plurality of frames of images to generate a target image.

An image sensor may include: a pixel array including a plurality of pixels; and a timing controller configured to control the pixel array according to an operation mode of the pixel array. The operation mode may be any one of a first mode in which the plurality of pixels operate according to a global shutter method and a second mode in which the plurality of pixels operate according to a dual conversion gain method.

Power consumption in realizing a convolutional neural network (CNN) is reduced.

A solid-state imaging element according to the present technology includes a photoelectric conversion element that photoelectrically converts received light into signal charge corresponding to the amount of received light, a floating diffusion that holds the signal charge obtained by the photoelectric conversion element, a transfer control element that controls transfer of the signal charge from the photoelectric conversion element to the floating diffusion, and a control unit that controls application of a drive voltage to the transfer control element on the basis of a convolution coefficient in a CNN.

An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in one frame. During the first period, pixel signal readout is performed on at least one first row in the pixel array PA. During the second period, pixel signal readout is performed on at least one second row in the pixel array PA. At least one of the at least one first row or the at least one second row includes two rows in the pixel array PA. During the third period, no pixel signal readout is performed on the rows in the pixel array PA. Each of the first period and the second period is one of the high-sensitivity exposure period and the low-sensitivity exposure period. The third period is the other of the high-sensitivity exposure period and the low-sensitivity exposure period.

An imaging element of the present disclosure includes an analog-to-digital converter configured to convert multiple analog pixel signals that are acquired under multiple imaging conditions different from each other and that are output from a pixel, to multiple digital pixel signals, a threshold setting unit configured to set, on an input side of the analog-to-digital converter, a threshold that is randomly varied, a comparison unit configured to use, as a comparison threshold, the threshold set by the threshold setting unit and compare the comparison threshold with one of the multiple analog pixel signals, and a selection unit configured to select and output, on the basis of a result of comparison from the comparison unit, one of the multiple digital pixel signals that are output from the analog-to-digital converter.

An image sensor includes a pixel having an internal capacitor. Each of a plurality of pixels of the image sensor includes a photodetection circuit and an analog-to-digital converter (ADC). The photodetection circuit generates a detection signal. The ADC converts the detection signal using a ramp signal. The photodetection circuit includes a photodiode, a floating diffusion node and an overflow transistor. The floating diffusion node accumulates photocharges generated by the photodiode and includes a parasitic capacitor. The overflow transistor electrically connects the floating diffusion node to a first internal capacitor of the ADC.

An image sensor includes: a photoelectric conversion unit that photoelectrically converts light to generate an electric charge; a holding unit that holds the electric charge generated by the photoelectric conversion unit; an accumulation unit that accumulates the electric charge generated by the photoelectric conversion unit; a first transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit; and a second transfer path that transfers the electric charge generated by the photoelectric conversion unit to the accumulation unit via the holding unit.