Methods and apparatuses for a lithography exposure process are described. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The methods utilized and the apparatuses include two or more collectors for collecting the generated EUV light and reflecting the collected EUV light to a focal point of one of the collectors. In some embodiments, one of the two collectors includes a ring-shaped collector.

An extreme ultraviolet light generator includes a collector including a first focus and a second focus, a droplet feeder configured to provide a source droplet toward the first focus of the collector, a laser generator configured to irradiate a laser toward the first focus of the collector, an airflow controller between the first focus and the second focus of the collector, the airflow controller having a ring shape, and the airflow controller including at least one slit, and a first part and a second part hinged to each other, and a control gas feeder configured to provide a control gas towards the at least one slit of the airflow controller.

An extreme ultraviolet light generation apparatus includes a chamber surrounding a first space, a partition wall surrounding a second space and including a first opening allowing the first space to communicate with the second space, a target supply unit configured to supply a target including a target substance to a plasma generation region in the second space, an EUV light concentrating mirror configured to concentrate extreme ultraviolet light generated in the plasma generation region, a target collection unit configured to collect the target that has passed through the plasma generation region and adhesion debris of the target substance that has adhered to an inner surface of the partition wall, a temperature adjuster configured to heat the partition wall, and a first switch configured to switch opening and closing of the first opening.