H05K2201/0373

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device and a method for manufacturing the semiconductor device. The semiconductor device includes an insulating substrate, a semiconductor chip, a plate member, and a cooler. The insulating substrate includes insulating ceramics serving as an insulating plate, and conductive plates provided on opposite surfaces of the insulating ceramics. The semiconductor chip is provided on an upper surface of the insulating substrate. The plate member is bonded to a lower surface of the insulating substrate. The cooler is bonded to a lower surface of the plate member. At least one of bonding between a lower surface of the insulating substrate and the plate member and bonding between a lower surface of the plate member and the cooler is performed via a bonding member composed mainly of tin. Also, a cyclic stress of the plate member is smaller than a tensile strength of the bonding member.

LAMINATE FILM AND ELECTRODE SUBSTRATE FILM, AND METHOD OF MANUFACTURING THE SAME
20170226624 · 2017-08-10 · ·

[Object] Provided are a laminate film and an electrode substrate film with excellent etching quality, in which a circuit pattern formed by etching processing is less visible under highly bright illumination, and a method of manufacturing the same.

[Solving Means] A laminate film includes a transparent substrate 60 formed of a resin film and a layered film provided on at least one surface of the transparent substrate. The layered film includes metal absorption layers 61 and 63 as a first layer and metal layers (62, 65), (64, 66) as a second layer, counted from the transparent substrate side. The metal absorption layers are formed by a reactive sputtering method which uses a metal target made of Ni alone or an alloy containing two or more elements selected from Ni, Ti, Al, V, W, Ta, Si, Cr, Ag, Mo, and Cu, and a reactive gas containing oxygen. The reactive gas contains hydrogen.

Strain-Tolerant Die Attach with Improved Thermal Conductivity, and Method of Fabrication
20170323844 · 2017-11-09 · ·

A mechanically-stable and thermally-conductive interface device between a semiconductor die and a package for the die, and related method of fabrication, comprising: a semiconductor die; a package for the die; a surface area-enhancing pattern on the package and/or the die; and die attach materials between the die and the package, the die attach materials attaching the die to the package through an interface provided by the die attach materials; wherein: an effective bonding area between the die attach materials and the package and/or the die is greater with the pattern than without the pattern; and the increase of the effective bonding area simultaneously increases the surface area for thermal transport between the package and/or the die, and the die attach materials; and increases the surface area for stably attaching the at least one of the package and the die to the die attach materials.

ELECTRONIC DEVICE AND WIRING STRUCTURE THEREOF
20210385940 · 2021-12-09 ·

A wiring structure is provided, including a conductive wiring and an insulating layer. The conductive wiring is disposed on a substrate and has a top side, a bottom side and two side walls opposite to each other. The insulating layer which wraps around the conductive wiring at least through the top side and two side walls, wherein there is a gap between the insulating layer and at least one of the two side walls.

Dielectric and metallic nanowire bond layers

In some examples, an electronic device comprises a first component having a surface, a second component having a surface, and a bond layer positioned between the surfaces of the first and second components to couple the first and second components to each other. The bond layer includes a set of metallic nanowires and a dielectric portion. The dielectric portion comprises a polymer matrix and dielectric nanoparticles.

Electrodeposited copper foil and electrode, and lithium-ion secondary battery comprising the same

Provided are an electrodeposited copper foil, an electrode comprising the same, and a lithium-ion secondary battery comprising the same. The electrodeposited copper foil has a drum side and a deposited side opposing the drum side, wherein at least one of the drum side and the deposited side exhibits a void volume value (Vv) in the range of 0.17 μm.sup.3/μm.sup.2 to 1.17 μm.sup.3/μm.sup.2; and an absolute value of a difference between a maximum height (Sz) of the drum side and a Sz of the deposited side is in the range of less than 0.60 μm.

ELECTRONIC DEVICE
20230262885 · 2023-08-17 ·

An electronic device is provided, including a substrate, a conductive element, and an insulating layer. The conductive element is disposed on the substrate. The conductive element includes a first layer, a second layer, and a third layer. The second layer is disposed on the first layer. The third layer is disposed on the second layer. The insulating layer is disposed on the conductive element. A thickness of the second layer is greater than a thickness of the first layer, and the thickness of the second layer is greater than a thickness of the third layer. There is a gap between the insulating layer and the conductive element.

JOINT STRUCTURE, ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE JOINT STRUCTURE
20220142005 · 2022-05-05 ·

A joint structure includes a first member, a second member and a metal joint layer. The first member has including a first surface and is made of material having one of copper, copper alloy, aluminum, or aluminum alloy. The second member includes a second surface that faces the first surface of the first material. The metal joint layer includes a gold joint layer made of material having gold or gold alloy and is disposed between the first surface of the first material and the second surface of the second material. A thickness of the metal joint layer is smaller than flatness of the first surface of the first material and flatness of the second surface of the second material. Fluorine is dispersed inside at least the gold joint layer included in the metal joint layer.

Conductor trace structure reducing insertion loss of circuit board
11178773 · 2021-11-16 ·

A conductor trace structure reducing insertion loss of circuit board, the circuit board laminates an outer layer circuit board, an inner layer circuit board and a glass fiber resin films which arranged between each board; before laminated process, the conductor traces of the inner layers had formed by etching of imaging transfer process and conductor traces had been roughed process for making the glass fiber resin films having good adhesive performance during laminating; before etching of imaging transfer process that forms the conductor traces of the outer layers or solder resist coat process or coating polymer materials, the conductor traces have been roughed process to make insulating resin layer of the solder resist coat or polymer materials to has better associativity; wherein a smooth trench is formed by physical or chemical process constructed on the roughed conductor traces surface to guide electric ions transmitted on these smooth trench surface to enhance electric ions transmission rate, resulting in reducing the impedance so as to achieve reducing insertion loss.

Strip for an electronic device and manufacturing method thereof

A strip for an electronic device senses a liquid sample. The strip includes a substrate having a first surface, a plurality of protrusions disposed on the first surface, and each having a width, and a hydrophilic layer having a layer surface disposed on the first surface and the plurality of protrusions, and having a second surface opposite to the layer surface, whereby the liquid sample and the second surface have a contact angle therebetween ranging from 2 to 85 degrees when the liquid sample is disposed on the hydrophilic layer.