A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of alternating layers of semiconductor material. A collector and emitter are formed adjacent to the intrinsic base on opposite sides of the base. An extrinsic base structure is formed on the intrinsic base.

An exemplary biosensor sensor for detecting the presence of a biological material includes an SOI substrate, a BJT formed on at least a portion of the substrate, and a sensing structure formed on at least a portion of an upper surface of the BJT. The BJT includes an emitter region, a collector region and a self-aligned epitaxially grown intrinsic base region laterally adjacent to the emitter and collector regions. The sensing structure includes an opening, centered above and exposing the intrinsic base region, and at least one dielectric layer formed in the opening and contacting at least a portion of the intrinsic base region. The dielectric layer is configured to respond to charges in biological molecules.

An exemplary biosensor sensor for detecting the presence of a biological material includes an SOI substrate, a BJT formed on at least a portion of the substrate, and a sensing structure formed on at least a portion of an upper surface of the BJT. The BJT includes an emitter region, a collector region and a self-aligned epitaxially grown intrinsic base region laterally adjacent to the emitter and collector regions. The sensing structure includes an opening, centered above and exposing the intrinsic base region, and at least one dielectric layer formed in the opening and contacting at least a portion of the intrinsic base region. The dielectric layer is configured to respond to charges in biological molecules.

Methods and systems include constructing and operating a semiconductor device with a mid-band dopant layer. In various implementations, carriers that are optically excited in a mid-band dopant region may provide injection currents that may reduce transition times and increase achievable operating frequency in a bipolar junction transistor (BJT). In various implementations, carriers that are optically excited in a mid-band dopant region within a thyristor may improve closure transition time, effective current spreading velocity, and maximum rate of current rise.

Provided is a small-sized device for measuring an oxidation-reduction potential, whereby an oxidation-reduction current and an oxidation-reduction potential can be measured by reducing noise even when a signal from a solution being measured is small. A device for measuring an oxidation-reduction potential is provided with a substrate (10), a working electrode (15) mounted on a surface of the substrate (10), and a bipolar transistor (21) for amplifying the output of the working electrode (15) also provided on the surface of the substrate (10), and the signal amplified by the bipolar transistor (21) is inputted to a processing circuit (18).

A method comprises arranging a stack, on a semiconductor substrate, comprising a sacrificial layer and an insulating layer. The insulator layer is at least partially arranged between the semiconductor substrate and the sacrificial layer. A recess is formed within the stack. The recess extends through the stack to the semiconductor substrate so that the recess at least partially overlaps with a surface of the collector region of the semiconductor substrate. The collector region extends from a main surface of the semiconductor substrate into the substrate material. The method further comprises generating a base structure at the collector region and in the recess. The base structure contacts and covers the collector region within the recess of the sacrificial layer. The method further comprises generating an emitter structure at the base structure. The emitter structure contacts and at least partially covers the base structure within the recess of the sacrificial layer.

A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region.

A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of alternating layers of semiconductor material. A collector and emitter are formed adjacent to the intrinsic base on opposite sides of the base. An extrinsic base structure is formed on the intrinsic base.

A semiconductor device includes a P-type semiconductor substrate, a plurality of N-type buried diffusion layers that are arranged in the semiconductor substrate, an N-type first semiconductor layer that is arranged in a first region on a first buried diffusion layer, an N-type second semiconductor layer that is arranged in a second region on a second buried diffusion layer, an N-type first impurity diffusion region that surrounds the first region in plan view, a P-type second impurity diffusion region that is arranged in the second semiconductor layer, an N-type third impurity diffusion region that is arranged in the second semiconductor layer, an N-type fourth impurity diffusion region that is arranged in the first semiconductor layer. The second region is a region in which an N-type impurity diffusion region that has a higher impurity concentration than the second semiconductor layer cannot be arranged.

A semiconductor device according to the present invention includes a first conductive-type semiconductor layer, a second conductive-type base region that is arranged in the front surface portion of the semiconductor layer, a plurality of trenches that extend from a front surface of the semiconductor layer beyond a bottom portion of the base region with an active region being defined therebetween, a plurality of first conductive-type emitter regions that are arranged in the active region, each connecting the trenches adjacent to each other, a gate electrode that is embedded in the trench, an embedding insulating film that is embedded in the trench on the gate electrode and that has an upper surface in the same height position as the front surface of the semiconductor layer or in a height position lower than the front surface and an emitter electrode that covers the active region and the embedding insulating film and that is electrically connected to the base region and the emitter region.