Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0Al+Ga0.5 and 0As1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength is 2.5 m or more at room temperature.

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0Al+Ga0.5 and 0As1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength is 2.5 m or more at room temperature.

The present invention discloses a vertical photoconductive semiconductor switch (PCSS) made of group III nitride material. The vertical PCSS is made of a plate of a semi-insulating group III nitride crystal such as GaN, AlN, and BN. The vertical PCSS has an electrically conductive region on the top surface, which acts as a window for the photo irradiation. There is a top electrode connected to the electrically conductive region. The shortest distance from the edge of the plate to the boundary of the electrically conductive region and the boundary of the top electrode is preferably larger than the thickness of the plate. The Vertical PCSS also has an electrode on the bottom surface of the plate.

The present invention discloses a vertical photoconductive semiconductor switch (PCSS) made of group III nitride material. The vertical PCSS is made of a plate of a semi-insulating group III nitride crystal such as GaN, AlN, and BN. The vertical PCSS has an electrically conductive region on the top surface, which acts as a window for the photo irradiation. There is a top electrode connected to the electrically conductive region. The shortest distance from the edge of the plate to the boundary of the electrically conductive region and the boundary of the top electrode is preferably larger than the thickness of the plate. The Vertical PCSS also has an electrode on the bottom surface of the plate.

A super-semiconductor (SSC), semiconductor devices including the SSC, and methods for making the SSC. The SSC includes a bimetallic nanostructured array having a substrate and a nanoshell array disposed on the substrate. The nanoshell array is defined by a plurality of non-close-packed, non-conductive, core bodies disposed on the substrate, a first metal layer disposed on the non-conductive core bodies and on the substrate in areas located between adjacent non-conductive core-bodies, and at least a second metal layer disposed on the first metal layer, wherein the second metal is different than the first metal. The bimetallic nanostructured array exhibits p-type or n-type metal conductivity above a transition temperature, and in embodiments, exhibits resistivity in a range of 10.sup.8-10.sup.7 ohm*m at a temperature of 300K+/40K.

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a vertical LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body, the first electrode defining an area through which light energy from at least one light source can impinge on the first surface; and a second electrode in contact with a second surface of the semiconductor body opposed to the first surface, wherein the vertical LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a vertical LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body, the first electrode defining an area through which light energy from at least one light source can impinge on the first surface; and a second electrode in contact with a second surface of the semiconductor body opposed to the first surface, wherein the vertical LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

The disclosure relates to a device for detecting therapeutic radiation based on an optical disk with solar cells. The radiation detecting device may include at least one optical disk formed of a water-equivalent material, disposed perpendicular to a first direction in which the radiation is incident, and converting the radiation into visible light; a solar cell disposed on one side of the at least one optical disk, converting the visible light into an electrical signal; and a processing module for collecting and processing the electrical signal outputted from the solar cell.

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.