This present invention provides a novel photoconductive semiconductor switch (PCSS) comprising: a semi-insulating substrate, an anode formed on the upper surface of said semi-insulating substrate, a first n-type doped layer formed on the lower surface of said semi-insulating substrate, a p-type doped layer formed on said first n-type doped layer, a second n-type doped layer formed on said p-type doped layer, a cathode formed on said second n-type doped layer, several recesses facing towards said first n-type doped layer and vertically extending into a part of said first n-type doped layer, an insulating layer formed on said second n-type doped layer and on the walls and the bottoms of said recesses, a gate electrode consisting of two parts, one part of the which formed on said insulating layer on the walls and the bottoms of recesses, and the other part of the which formed on a part of the insulating layer on the second n-type doped layer for electrically connecting the part of the gate electrode on the recesses, wherein the cathode and the gate electrode are electrically isolated.

A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.

A device includes an active region, an isolation structure, a gate structure, an interlayer dielectric (ILD) layer, a reading contact, and a sensing contact. The isolation structure laterally surrounds the active region. The gate structure is across the active region. The ILD layer laterally surrounds the gate structure. The reading contact is in contact with the isolation structure and is separated from the gate structure by a first portion of the ILD layer. The sensing contact is in contact with the isolation structure and is separated from the gate structure by a second portion of the ILD layer.

Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.

Disclosed herein are tritium detection devices and methods of making and use thereof. For example, disclosed herein are tritium detection devices comprising: a tritium detection region comprising a tritium absorption layer and an anti-diffusion layer; a Schottky contact region comprising a Schottky contact layer; a semiconductor layer, the semiconductor layer being a layer comprising a semiconductor; an epitaxial semiconductor layer, the epitaxial semiconductor layer being an epitaxial layer of the semiconductor; and an Ohmic contact layer.

A radiation sensing device, that includes a sensing region that includes a radiation sensor, and an exterior region that includes a first guard element, a field limiting region, an array of surface holes and one or more sub-surface inner spaces. The exterior region is configured to prevent breakdown of the radiation sensing device at a presence of a surface charge created due to the radiation. The array of surface holes and the sub-surface inner spaces are located between the first guard element and the field limiting region and are configured to reduce the capacitance pf the exterior region.

A photodetector includes a first thin-film transistor configured to convert light into an electric signal. The first TFT includes a first gate electrode, a first source electrode, a first drain electrode, and a first oxide semiconductor film striding between the first source electrode and the first drain electrode. The first gate electrode and the first source electrode are electrically connected to each other.

A photodetector includes a first thin-film transistor configured to convert light into an electric signal. The first TFT includes a first gate electrode, a first source electrode, a first drain electrode, and a first oxide semiconductor film striding between the first source electrode and the first drain electrode. The first gate electrode and the first source electrode are electrically connected to each other.