An optical element package includes: an eyelet including an upper surface and a lower surface opposite to the upper surface; a heat releasing part disposed on the upper surface of the eyelet; a through hole formed through the eyelet to extend from the upper surface of the eyelet to the lower surface of the eyelet; a lead sealed by a certain member provided in the through hole and including a lead portion extending from the lower surface of the eyelet and a lead wiring portion extending from the upper surface of the eyelet; and an insulating substrate disposed between the lead wiring portion and the heat releasing part and comprising a front surface and a back surface opposite to the front surface.

An optical sensor is installed in a device, and includes a light-emitting element, and a light-receiving element for receiving light emitted from the light-emitting element and traveling through a space. The optical sensor detects an object present in the space, based on a change of the light impinging upon the object. A first optical waveguide is connected to the light-emitting element so as to be capable of light propagation. The first optical waveguide has a front end portion serving as a light exit portion for exiting light emitted from the light-emitting element. A second optical waveguide is connected to the light-receiving element so as to be capable of light propagation. The second optical waveguide has a front end portion serving as a light entrance portion for receiving light exiting from the light exit portion of the first optical waveguide and traveling through the space.

An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; alight source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

According to one embodiment, a semiconductor module includes a first semiconductor element, a second semiconductor element, a first light emitting element and a second light emitting element. The first semiconductor element is provided with a first light receiving circuit and a first output circuit. The second semiconductor element is provided with a second light receiving circuit and a second output circuit. The first light emitting element is electrically connected to the second output circuit and mounted on the first semiconductor element such that first light emitted from the first light emitting element is received by the first light receiving circuit. The second light emitting element is electrically connected to the first output circuit and mounted on the second semiconductor element such that second light emitted from the second light emitting element is received by the second light receiving circuit.

An electronic device includes a substrate, an optical sensor coupled to the substrate, and an optical emitter coupled to the substrate. A lens is aligned with the optical emitter and includes an upper surface and an encapsulation bleed stop groove around the upper surface. An encapsulation material is coupled to the substrate and includes first and second encapsulation openings therethrough aligned with the optical sensor and the lens, respectively.

According to various embodiments, an optoelectronic component may be provided, the optoelectronic component including: an electrode structure disposed at least one of over and in a carrier; and a grating structure disposed over the electrode structure, the grating structure including at least a first region and a second region, wherein the first region of the grating structure includes amorphous silicon; and wherein the second region of the grating structure includes a material having a refractive index different from the refractive index of the amorphous silicon.

A method for fabricating a semiconductor proximity sensor includes providing a flat leadframe with a first and a second surface. The second surface is solderable. The leadframe includes a first and a second pad, a plurality of leads, and fingers framing the first pad. The fingers are spaced from the first pad by a gap which is filled with a clear molding compound. A light-emitting diode (LED) chip is assembled on the first pad and encapsulated by a first volume of the clear compound. The first volume outlined as a first lens. A sensor chip is assembled on the second pad and encapsulated by a second volume of the clear compound. The second volume outlined as a second lens. Opaque molding compound fills the space between the first and second volumes of clear compound and forms walls rising from the frame of fingers to create an enclosed cavity for the LED. The pads, leads, and fingers connected to a board using a layer of solder for attaching the proximity sensor.

The invention relates to a measuring system, comprising a substrate (10), which has a quantum dot layer (16), which is arranged on the substrate and which comprises an emission segment (30) having a first plurality of quantum dots (34), which first plurality has an average first energy gap, wherein the first plurality can emit radiation corresponding to the average first energy gap, wherein the quantum dot layer (16) comprises at least one absorption segment (32) having a second plurality of quantum dots (36) and the second plurality has an average second energy gap that is less than the average first energy gap so that radiation (60) emitted by the emission segment (30) can be absorbed by the at least one absorption segment (32).

According to one embodiment, a semiconductor device includes a first semiconductor element having a first surface, a second semiconductor element having a lower surface bonded to the first surface of the first semiconductor element, a gel-like silicone that covers an upper surface of the second semiconductor element, and a resin portion that covers the gel-like silicone and the first surface of the first semiconductor element.

A method of forming a semiconductor structure includes forming a first optical waveguide and a second optical waveguide on a sapphire substrate. The first optical waveguide and the second optical waveguide each include a core portion of gallium nitride (GaN), and a cladding layer laterally surrounding the core portion. The cladding layer includes a material having a refractive index less than a refractive index of the sapphire substrate. The method further includes etching a portion of the cladding layer to form a microfluidic channel therein and forming a capping layer on a top surface of the first optical waveguide, the second optical waveguide and the microfluidic channel.