Provided are a heterocyclic compound represented by Formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device:

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The substituents in Formula 1 are the same as described in the detailed description.

An light emitting device of the present embodiments includes oppositely disposed first electrode and second electrode, and a plurality of organic layers disposed between the first electrode and the second electrode, wherein at least one among the plurality of organic layers includes a fused polycyclic compound represented by Formula 1 below, thereby showing improved emission efficiency:

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An organic light emitting display apparatus including a substrate including a plurality of pixel areas; a pixel electrode on the substrate; an opposite electrode on the pixel electrode, the opposite electrode transmitting light; an organic light emitting layer between the pixel electrode and the opposite electrode, the organic light emitting layer emitting a first light toward the opposite electrode; a light emitting layer on the opposite electrode, the light emitting layer absorbing a portion of the first light and emitting a second light; and a sealing layer on the light emitting layer, the sealing layer sealing the pixel electrode, the opposite electrode, the organic light emitting layer, and the light emitting layer.

An organic EL device includes: an anode; a cathode; an anode side emitting unit; a cathode side emitting unit; a charge generating unit; a first organic layer having a thickness of 40 nm or less; and a second organic layer, in which the anode side emitting unit includes a first emitting layer which is provided close to the anode, a difference between an ionization potential Ip(H1) of a first host material in the first emitting layer and an ionization potential Ip(EBL) of a first organic material in the first organic layer satisfies a relationship of a numerical formula (Numerical Formula A1) below,

Ip(H1)−Ip(EBL)≤0.4 eV  (Numerical Formula A1).

An organic light emitting diode (OLED) architecture in which efficient operation is achieved without requiring a blocking layer by locating the recombination zone close to the hole transport side of the emissive layer. Aryl-based hosts and Ir-based dopants with suitable concentrations result in an efficient phosphorescent OLED structure. Previously, blocking layer utilization in phosphorescent OLED architectures was considered essential to avoid exciton and hole leakage from the emissive layer, and thus keep the recombination zone inside the emissive layer to provide high device efficiency and a pure emission spectrum.

A light-emitting device includes a first electrode, a second electrode facing the first electrode, and an interlayer disposed between the first electrode and the second electrode, wherein the interlayer includes an emission layer, and the emission layer includes a condensed cyclic compound. An electronic apparatus includes the light-emitting device. The condensed cyclic compound is represented by Formula 1, wherein the detailed description of Formula 1 is the same as described in the specification:

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A light-emitting device including: m emitting units located between a first electrode and a second electrode; and m−1 charge generation units, each located between two neighboring emitting units among the m emitting units and including an n-type charge generation layer and a p-type charge generation layer. The m emitting units may each include an emission layer, at least one of the m emission layers comprises a first emission layer and a second emission layer that are in contact with each other, the first emission layer includes a first host, a second host, and a first dopant, the second emission layer includes a third host, a fourth host, and a second dopant, the first host and the second host form a first exciplex, the third host and the fourth host form a second exciplex, and the first dopant is a delayed fluorescence dopant, and the second dopant is a phosphorescent dopant.

A light-emitting element having low driving voltage and high emission efficiency is provided. In the light-emitting element, a combination of a guest material and a host material forms an exciplex. The guest material is capable of converting triplet excitation energy into light emission. Light emission from the light-emitting layer includes light emission from the guest material and light emission from the exciplex. The percentage of the light emission from the exciplex to the light emission from the light-emitting layer is greater than 0 percent and less than or equal to 60 percent. The energy after subtracting the energy of light emission from the exciplex from the energy of light emission from the guest material is greater than 0 eV and less than or equal to 0.23 eV.

An organic light emitting device, comprising an anode; a cathode; and an emissive layer between the anode and the cathode, wherein the emissive layer comprises a first material which is an organic semiconductor compound and a second material which is a different organic semiconductor compound that has a spin doublet ground state; and wherein a lowest spin singlet excitation energy of the first material and a lowest spin triplet excitation energy of the first material are greater than a lowest spin doublet excitation energy of the second material; a method of fabricating an organic light emitting device, comprising: forming an emissive layer between an anode and a cathode, wherein the emissive layer comprises a first material which is an organic semiconductor compound and a second material which is a different organic semiconductor compound that has a spin doublet ground state; and wherein a lowest spin singlet excitation energy of the first material and a lowest spin triplet excitation energy of the first material are greater than a lowest spin doublet excitation energy of the second material; and a method of operating the device by applying a voltage across the device, such that spin singlet excited states and spin triplet excited states are formed for the first material, wherein energy is transferred from spin singlet excited states in the first material and spin triplet excited states in the first material to form spin doublet excited states in the second material, wherein the second material emits fluorescent light when transitioning from a spin doublet excited state to a ground state.

Provided are a light-emitting device and an electronic apparatus including the same. The light-emitting device includes a first electrode, a second electrode facing the first electrode, and an emission layer between the first electrode and the second electrode, wherein the first electrode is a reflective electrode, the emission layer includes i) a first emission layer, ii) a second emission layer, or a combination thereof, wherein when the first emission layer and the second emission layer are both present, then the second emission layer is located between the first emission layer and the second electrode, the first emission layer includes a first compound capable of emitting first light having a first spectrum, λP(1) is an emission peak wavelength (nm) of the first spectrum, the second emission layer includes a second compound capable of emitting second light having a second spectrum, λP(2) is an emission peak wavelength (nm) of the second spectrum, the emission layer may emit third light having a third spectrum, λP(3) is an emission peak wavelength (nm) of the third spectrum, λP(1) is less than λP(2), |λP(1)−λP(2)| is greater than 0 nm and less than or equal to 30 nm, and each of |λP(2)−λP(3)| and |λP(3)−λP(1)| is greater than or equal to 0 nm and less than or equal to 30 nm.