A method for preparing three-dimensional perovskite nanopixels of a digital display is provided. The method includes steps of preparing precursor ink by mixing methylammonium halide and lead halide and adding them into another mixture, adding the precursor ink into a nanopipette, placing the nanopipette with the precursor ink above a silicon substrate and apart from the silicon substrate by a certain distance, configuring the nanopipette to come into contact with the Si substrate such that a portion of the precursor ink having an interface surface of a shape of a meniscus is formed between the nanopipette and the silicon substrate, performing rapid evaporation of the portion of the precursor ink to facilitate crystallization of perovskite, moving the nanopipette upwardly at a constant speed such that the crystallization of perovskite proceeds upwardly, and terminating the crystallization of perovskite to generate a freestanding nanopixel for emitting light.

A manufacturing method of a display apparatus, in which a defect rate in a manufacturing process is reduced and product reliability is increased, and a display apparatus manufactured according to the method are provided. The manufacturing method includes: forming a first pixel electrode on a substrate; forming an insulating layer; forming a first dam portion; forming a first lift-off layer; forming a first mask layer; forming a first intermediate layer; forming a first opposite electrode; forming a first insulating protective layer; and removing the first dam portion.

An organic light-emitting diode and a preparation method therefore, a display panel and a display device. The organic light-emitting diode comprises an anode (300); a light-emitting layer (200); and a cathode (100), wherein the light-emitting layer (200) is internally provided with a doping material and at least two types of host materials, and a horizontal alignment factor of the light-emitting layer (200) is not less than 65%.

An organic light-emitting diode and a preparation method therefore, a display panel and a display device. The organic light-emitting diode comprises an anode (300); a light-emitting layer (200); and a cathode (100), wherein the light-emitting layer (200) is internally provided with a doping material and at least two types of host materials, and a horizontal alignment factor of the light-emitting layer (200) is not less than 65%.

A display device including: a plurality of sub-pixels arranged in a matrix, each including an electro-optical element having a structure in which a display functional layer is sandwiched between an upper electrode and a lower electrode; and an auxiliary interconnect contact in a pixel area in which the plurality of sub-pixels are arranged in a matrix and electrically connecting the upper electrode to an auxiliary interconnect, wherein m (m is an integer equal to or larger than two) sub-pixels adjacent to each other along an arrangement direction of the sub-pixels are regarded as one group, and n (n is a natural number smaller than m) auxiliary interconnect contacts are formed for each group.

A display device includes: in a display area, a first transistor including a first gate electrode; a second transistor electrically connected to the first transistor, including a second gate electrode; a light-emitting element; and in a peripheral area surrounding the display area, a power wiring including: first and second power wiring patterns spaced apart from each other; and a bridge pattern connecting the first and second power wiring patterns; a signal wiring; and an insulating layer covering the power wiring and the signal wiring, and a part of the insulating layer is removed to form an organic layer-removed area, the bridge pattern overlapping the organic layer-removed area, the power wiring and the signal wiring overlap each other in the organic layer-removed area, the signal wiring and the bridge pattern are disposed in a same layers as the first gate electrode and the second gate electrode, respectively.

A display apparatus includes: a base substrate; a thin film transistor disposed on the base substrate and including an active pattern; an insulating layer disposed on the active pattern of the thin film transistor; a connection electrode disposed on the insulating layer, and electrically connected to the thin film transistor, wherein the connection electrode includes a curved wiring portion; a first via insulating layer covering the connection electrode; a first electrode disposed on the first via insulating layer; a light emitting layer disposed on the first electrode and at least partially overlapping the connection electrode; and a second electrode disposed on the light emitting layer.

An organic light-emitting device and a preparation method therefor, a display panel, and a display device. The organic light-emitting device comprises an anode layer, a cathode layer, and a first light-emitting layer and an auxiliary light-emitting layer disposed between the anode layer and the cathode layer; the auxiliary light-emitting layer is located between the first light-emitting layer and the cathode layer; the first light-emitting layer comprises a first host material, a first thermally activated delayed fluorescence material, and a first fluorescence guest material; the auxiliary light-emitting layer comprises at least a second host material and a second thermally activated delayed fluorescence material. The first light-emitting layer is a super-fluorescence system, and the auxiliary light-emitting layer also forms a super-fluorescence system together with the first fluorescence guest material.

Disclosed are an array substrate and a fabricating method therefor, a display panel, and a display device, and relating to the technical field of display. The method comprises: forming a patterned film layer on one side of a substrate, the patterned film layer comprising a plurality of recesses; and palcing a first precursor structure in the recesses, and the material of the first precursor structure comprises a first precursor; and placeing in the environment of a gaseous second precursor the substrate having the first precursor structure formed thereon to cause the reaction between the gaseous second precursor and the first precursor structure to form a perovskite crystal structure, wherein one of the first precursor and the second precursor comprises a metal halide, and the other comprises one of a formamidine halide, a methylamine halide, a cesium halide, and hydrogen sulfide, thereby achieving the manufacture of a perovskite microarray structure.

A stretchable device includes a stretchable substrate, and a plurality of optoelectronic diodes on the stretchable substrate. At least one optoelectronic diode includes a first electrode and a second electrode, and an active layer between the first electrode and the second electrode. The active layer includes a first semiconductor, a second semiconductor having different electrical characteristics from the first semiconductor, and an insulating elastomer.