A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

An organic photoelectronic device includes a first electrode and a second electrode facing each other and a light-absorption layer between the first electrode and the second electrode and including a photoelectric conversion region including a p-type light-absorbing material and an n-type light-absorbing material and a doped region including an exciton quencher and at least one of the p-type light-absorbing material and the n-type light-absorbing material, wherein at least one of the p-type light-absorbing material and the n-type light-absorbing material selectively absorbs a part of visible light, and an image sensor includes the same.

The invention relates to an organic electronic component comprising a cathode, an anode, at least one light-emitting layer which is arranged between the anode and the cathode, a first layer, which comprises a first matrix material and a dopant, a second layer, which comprises a second matrix material, wherein the first layer is arranged between the second layer and the anode, wherein the second layer is arranged between the anode and the at least one light-emitting layer, wherein the dopant is a fluorinated sulfonimide metal salt of the following formula 1: ##STR00001##

A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.

The invention relates to organic semiconducting compound and organic photoelectric components containing the organic semiconducting compound. The organic semiconducting compound is designed with a novel chemical structure, so that the compound demonstrates a good response value in the infrared light range, which is suitable for organic photoelectronic components, such as organic photodetector (OPD) or organic field-effect transistor (OFET), which come with a wavelength range of better absorbance and lower interference rate when in use.

The invention relates to organic semiconducting compound and organic photoelectric components containing the organic semiconducting compound. The organic semiconducting compound is designed with a novel chemical structure, so that the compound demonstrates a good response value in the infrared light range, which is suitable for organic photoelectronic components, such as organic photodetector (OPD) or organic field-effect transistor (OFET), which come with a wavelength range of better absorbance and lower interference rate when in use.

A display panel, a display device, and a method for manufacturing the display panel are provided. The display panel includes two electrode layers and a luminous functional layer stacked between the two electrode layers. Each electrode layer has a first surface and a second surface opposite to each other in a thickness direction thereof. The first surface of each electrode layer is attached to and in contact with the luminous functional layer. Each electrode layer includes at least one insulation section and at least one electrode section integrated as a single body. A material of the electrode section is a conductively modified form of a material of the insulation section. The electrode section is in contact with the luminous functional layer and is in a conductive state at least at the first surface. The electrode layer in the present disclosure has no conductive pattern and will not cause optical disturbance.

To provide a composition having a very low refractive index, an organic photoelectronic element using the composition, and simple methods for producing such a composition and an organic photoelectronic element. A composition comprising a fluorinated polymer, an organic semiconductor material and a dopant.

An organic optoelectronic device comprises a first electrode, a first carrier transport layer, an active layer, a second carrier transport layer and a second electrode. The first electrode is a transparent electrode. The active layer includes a low band gap small molecule material which includes a structure of Formula I:

##STR00001##

Wherein, o, m, n, p, x and y are independently selected from any integer from 0 to 2. Ar.sup.0, Ar.sup.1 and A.sup.2 are electron-donating groups. A.sup.0 is a heteroatom-containg tricyclic structure with or without substituents, and. the heteroatom comprises at least one of S, N, Si, and Se. A.sup.1 is an electron withdrawing group with or without substituents, and the structure of the electron-withdrawing group comprises at least one of S, N, Si, Se, C═O, —CN, SO.sub.2. The organic optoelectronic device of the present invention has good external quantum efficiency and dark current performance.