The invention relates to a process for the production of a molecular layer on a substrate using atomic layer deposition (ALD) techniques, for use in electronic components, in particular in memory elements of the ReRAM type. The present invention furthermore relates to compounds for the production of the molecular layer and to memory elements comprising the molecular layer.

In one aspect, the present disclosure provides organic semiconductors (OSNTs) as well as high-performance electrochemical devices based on the present OSNTs for the production of micro and nano-scale actuators. The present OSNTs may be used in several applications, including movable and implantable interface devices, such as flexible neural microelectrodes. Also provided herein are flexible neural microelectrodes based on conjugated polymer actuators

Photocurable compositions that combine redox-active semiconducting organic polymers with photocurable organic molecules are provided. Upon exposure to radiation, the photocurable compositions form ion-permeable, electrically conductive crosslinked organic films that can be used as conducting channels in n-channel or p-channel organic electrochemical transistors, including vertical organic electrochemical transistors (vOECTs). The vOECTs can be incorporated in complementary electronic circuits.

This composition for a hole collecting layer of an organic photoelectric conversion element contains: a charge-transporting substance comprising a polyaniline derivative represented by formula (1); a fluorine-based surfactant; and a solvent. The composition provides a thin film suitable for a hole collecting layer of an organic photoelectric conversion element, and is particularly suited for producing an inverse lamination type organic photoelectric conversion element. ##STR00001##
(In the formula, R.sup.1 to R.sup.6 each independently represent a hydrogen atom, etc., but one of R.sup.1 to R.sup.4 is a sulfonic acid group, one or more of the remaining R.sup.1 to R.sup.4 are a C1-20 alkoxy group, a C1-20 thioalkoxy group, a C1-20 alkyl group, a C2-20 alkenyl group, a C2-20 alkynyl group, a C1-20 haloalkyl group, a C6-20 aryl group, or a C7-20 aralkyl group, and m and n are numbers which satisfy 0≤m≤1, 0≤n≤1 and m+n=1).

A fluorescent infrared emitting composition comprising a mixture of a first material and a second material wherein the first material is a fluorescent infrared material and the second material is a fluorescent material having a higher photoluminescent quantum yield (PLQY) and shorter peak wavelength than the infrared emitting material. The composition may be used as the light-emitting layer of an organic light-emitting device.

Polymers, monomers, chromophoric polymer dots and related methods are provided. Highly fluorescent chromophoric polymer dots with narrow-band emissions are provided. Methods for synthesizing the chromophoric polymers, preparation methods for forming the chromophoric polymer dots, and biological applications using the unique properties of narrow-band emissions are also provided.

Disclosed are a polymer including at least one structural unit with a moiety represented by Chemical Formula 1, an organic thin film including the polymer, a thin film transistor, and an electronic device. ##STR00001## In Chemical Formula 1, Ar.sup.1 to Ar.sup.3, L.sup.1, L.sup.2, and R.sup.1 to R.sup.6 are the same as described in the detailed description.

A surface of a copper (Cu) electrode is modified by a combination of preliminary oxidation treatment and grafting of a bifunctional self-assembled monolayer based on fluorobiphenylthiol (FBPS) or biphenylthiol (BPS). Under these conditions, a dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT)-based diode exhibits high mobility (0.35 cm.sup.2.Math.V.sup.−1.Math.s.sup.−1) due to the formation of an organized assembly of FBPS on copper oxide that has been partially reduced to Cu.sub.2O. This organization controls that of a semiconductor film. On the other hand, the same treatment of a copper electrode with BPS molecules does not function due to the disorganization of both the BPS self-assembled monolayer (SAM) and the DNTT film. These results suggest that a monolayer of dipole-oriented molecules lowers an injection barrier and determines the semiconductor organization, thereby improving the performance of derived electronic parts.

A polymer including a structural unit represented by Chemical Formula 1, an electroluminescence device material including the polymer, an electroluminescence device including the polymer or the electroluminescence device material, and an electronic device including the electroluminescence device are provided:

##STR00001##

In Chemical Formula 1, the definition of each substituent is the same as described in the specification.

A method for enhancing aggregation state stability of organic semiconductor (OSC) films includes constructing the OSC film; introducing uniform and discontinuous nanoparticles on a surface of the film or an inside of the film. Electrical properties of the OSC film are not influenced by introducing the nanoparticles. Grain boundary, dislocation, stacking fault, and surface of the film are pinned by the nanoparticles, increasing potential barrier of the aggregation state evolution of the film, and thus enhancing the stability of the aggregation state and greatly improving maximum working temperature and storage lifetime of organic field-effect transistors. Under room temperature storage, morphology of the OSC film introduced with the nanoparticles is difficult to change, so that the stability of electrical properties of organic transistor components prepared from the film is ensured in a high-temperature and atmospheric working environment.