Methods of forming films of aligned carbon nanotubes on a substrate surface are provided. The films are deposited from carbon nanotubes that have been concentrated and confined at a two-dimensional liquid/liquid interface. The liquid/liquid interface is formed by a dispersion of organic material-coated carbon nanotubes that flows over the surface of an immiscible liquid within a flow channel. Within the interface, the carbon nanotubes self-organize via liquid crystal phenomena and globally align along the liquid flow direction. By translating the interface across the substrate, large-area, wafer-scale films of aligned carbon nanotubes can be deposited on the surface of the substrate in a continuous and scalable process.

A method of p-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a layered structure, wherein the layered structure is a tungsten diselenide film or a black phosphorus film; and p-type doping at least one portion of the carbon nanotube by covering the carbon nanotube with the layered structure.

A tunneling transistor includes a gate, an insulating layer placed on the gate, a carbon nanotube being semiconducting, a film-like structure, a source electrode, and a drain electrode. The carbon nanotube is placed on a surface of the insulating layer away from the gate. The film-like structure covers a portion of the carbon nanotube, and the film-like structure is a molybdenum disulfide film or a tungsten disulfide film. The source electrode is electrically connected to the film-like structure. The drain electrode is electrically connected to the carbon nanotube.

A method of n-type doping a carbon nanotube includes the following steps: providing a single carbon nanotube; providing a film-like structure, wherein the film-like structure is a molybdenum disulfide film or a tungsten disulfide film; and converting at least one portion of the carbon nanotube from a p-type to an n-type by covering the carbon nanotube with the film-like structure.

Disclosed herein is an apparatus and method for fabrication of large diameter single-walled carbon nanotube films. Advantageously, large diameter single-walled carbon nanotube films may be useful as transparent electrodes with high transparency and lower sheet resistance. In one embodiment, the method includes supplying carrier carbon monoxide and catalyst precursor through a first inlet at a temperature below the reaction temperature of the catalyst precursor; supplying heated carbon monoxide through a second inlet such that the heated carbon monoxide mixes with the carrier carbon monoxide and the catalyst an aerosol; reacting the aerosol in a reaction chamber to form a composite aerosol of single walled carbon nanotubes, metal nanoparticles, carbon monoxide, and carbon dioxide. In this embodiment, the heated carbon monoxide heats the catalyst precursor which reacts with the carbon monoxide to form carbon nanotubes.

Described are concepts, systems, circuits, devices, structures and methods for depositing carbon nanotubes (CNTs) uniformly over a substrate. The described concepts, systems, circuits, devices, structures and methods meet at least several requirements; namely, the systems, circuits, devices, structures are: (1) manufacturable; (2) silicon-CMOS compatible; and (3) provide a path for realizing energy efficiency benefits utilizing silicon. In embodiments, described is an illustrative CNT solution-based deposition technique that addresses all of these requirements. Also described is a method for providing carbon nanotube field effect transistors (CNFETs) using uniform and reproducible fabrication techniques suitable for use across industry-standard wafers and which may use the same equipment currently being used to fabricate silicon product wafers. Also described are CNFETs fabricated within commercial silicon manufacturing facilities and having wafer-scale uniformity and reproducibility across multiple wafers.

The present invention provides a self-healing field-effect transistor (FET) device comprising a self-healing substrate and a self-healing dielectric layer, said substrate and said layer comprising a disulfide-containing poly(urea-urethane) (PUU) polymer, wherein the dielectric layer has a thickness of less than about 10 μm, a gate electrode, at least one source electrode, and at least one drain electrode, said electrodes comprising electrically conductive elongated nanostructures; and at least one channel comprising semi-conducting elongated nanostructures. Further provided is a method for fabricating the FET device.

An imaging device includes a semiconductor substrate including a first surface receiving light from outside, and a second surface opposite to the first surface, a first transistor on the second surface, and a photoelectric converter facing the second surface and receiving light through the semiconductor substrate. The semiconductor substrate is a silicon or silicon compound substrate. The photoelectric converter includes a first electrode electrically connected to the first transistor, a second electrode, and a photoelectric conversion layer located between the first and second electrodes and containing a material absorbing light having a wavelength 1.1 μm or longer. The first electrode is located between the second surface and the photoelectric conversion layer. A spectral sensitivity of the material in a region of 1.0 μm or longer and shorter than 1.1 μm is 0% to 5% of the maximum value of a spectral sensitivity of the material in 1.1 μm or longer.

An object is to provide an SWCNT slurry for bioimaging with reduced toxicity that causes no aggregation of semiconductor SWCNTs, no accumulation in a specific site when administered to a living organism, and no clogging in blood vessels such as those in the lungs. In order to achieve the above-described object, a semiconductor single-walled carbon nanotube (SWCNT) slurry for bioimaging according to the present invention includes: semiconductor SWCNTs having an average particle size of less than 10 nm; and a dispersant composed of an amphiphilic substance that coats the surfaces of the SWCNTs.

A method of manufacturing a paste according to various embodiments of the present disclosure for resolving the above-described problems is disclosed. The method of manufacturing a paste may include an operation of adding a metal conductor and a multi-walled carbon nanotube (MWCNT) to chloroform (CHCl.sub.3) to produce a first mixture, an operation of adding polydimethylsiloxane (PDMS) to the first mixture to produce a second mixture, an operation of evaporating the chloroform in the second mixture to acquire a third mixture, and an operation of adding an additional additive to the third mixture to produce a paste.