MEMS COMPONENT

Abstract

A layer material which is particularly suitable for the realization of self-supporting structural elements having an electrode in the layer structure of a MEMS component. The self-supporting structural element is at least partially made up of a silicon carbonitride (Si.sub.1-x-yC.sub.xN.sub.y)-based layer.

Claims

1-7. (canceled)

8. A MEMS component, comprising: a layer structure in which at least one self-supporting structural element having at least one electrode is realized, the self-supporting structural element being at least partially made up of a layer based on silicon carbonitride (Si.sub.1-x-yC.sub.xN.sub.y), and at least one further electrode being developed in the layer structure, which forms a capacitor system together with the electrode of the self-supporting structural element, wherein at least one of the two electrodes of the capacitor system is supported so as to allow it to move, wherein the self-supporting structural element is used one of a stationary carrier or stationary connection, for at least one of the electrodes of the capacitor system.

9. The MEMS component as recited in claim 8, wherein the silicon carbonitride-based layer of the self-supporting structural element includes 40-55 at % Si content, 5-40 at % C content and 55-5 at % N content.

10. The MEMS component as recited in claim 8, wherein the silicon carbonitride-based layer of the self-supporting structural element is realized in the form of a silicon carbonitroboride layer Si.sub.1-x-y-zC.sub.xN.sub.yB.sub.z, with x, y, z being >1%.

11. The MEMS component as recited in claim 8, wherein the self-supporting structural element is used as carrier or suspension for the movable electrode of the capacitor system.

12. The MEMS component as recited in claim 8, wherein the self-supporting structural element is one of a pressure-sensor diaphragm or a microphone diaphragm.

13. The MEMS component as recited in claim 8, wherein the self-supporting structural element is the stationary counterelement to one of a pressure-sensor diaphragm or a microphone diaphragm.

14. The MEMS component as recited in claim 1, wherein the self-supporting structural element is a bending beam.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] There are various possibilities of embodying and further developing the present invention in an advantageous manner. In this context reference is made to the description below of a plurality of exemplary embodiments of the present invention with the aid of the figures.

[0017] FIGS. 1a, 1b shows a respective schematic sectional view of a capacitive MEMS pressure-sensor element 101 and 102.

[0018] FIG. 2 shows a schematic sectional view of a capacitive MEMS microphone component 200.

[0019] FIG. 3 shows a schematic sectional view of a capacitive MEMS inertial sensor element 300.

[0020] FIGS. 4a, 4b shows a schematic sectional view and a plan view of a further capacitive sensor element 400.

DETAILED DESCRIPTION OF EXAMPLE EMBODIMENTS

[0021] The layer structure of the two components 101 and 102 shown in FIGS. 1a and 1b is based on a respective CMOS substrate 1 into which circuit functionalities (not shown here in detail) are integrated. They are connected to each other via a back-end stack 2 having multiple wiring planes 21 and through contacts 22 between wiring planes 21 and are electrically contactable. In the exemplary embodiment shown, the electrical contacting takes place by way of a through contact 6, which extends from the front side of the component to the uppermost wiring plane of back-end stack 2.

[0022] Situated on back-end stack 2 is a relatively thin layer 3 based on silicon carbonitride in which a self-supporting pressure diaphragm 31 is developed. It spans a cavity 23 in back-end stack 2. The layer structure of components 101 and 102 furthermore includes a relatively thick functional layer 4, which is structured in the region above pressure diaphragm 31. Functional layer 4 was provided with through holes 41 here for the pressure application of pressure diaphragm 31, which terminate in a cavity 5 between pressure diaphragm 31 and functional layer 4.

[0023] To produce the component structures shown in FIGS. 1a and 1b, a silicon-oxide sacrificial layer was produced on layer 3 based on silicon carbonitride, and structured in the case of component 101, before functional layer 4 was deposited. Only after functional layer 4 had been structured was pressure diaphragm 31 exposed by removing the sacrificial-layer material again in an HF vapor-phase etching process via through holes 41 in functional layer 4. Layer 3 based on silicon carbonitride was not attacked in the process. It acted as etch stop and as passivation for back-end stack 2 in this sacrificial-layer etching process.

[0024] Both in the case of component 101 and of component 102, the deflections of pressure diaphragm 31 are detected in a capacitive manner with the aid of one or more electrode(s) 7, which are deflected together with pressure diaphragm 31, and one or more stationary counter electrode(s) 8.

[0025] In the case of component 101 shown in FIG. 1a, both the deflectable electrodes 7 and stationary electrodes 8 are developed in functional layer 4. Deflectable electrodes 7 are mechanically connected to pressure diaphragm 31 on account of the structuring of the sacrificial layer, i.e., via webs 71, whereas they are released therefrom as a result of the structuring of functional layer 4. In contrast, stationary electrodes 8 are linked to functional layer 4. The very high specific resistance of layer 3 based on silicon carbonitride prevents the occurrence of leakage currents between deflectable electrodes 7 and the layer structure of component 101.

[0026] In the case of component 102 shown in FIG. 1b, only stationary electrodes 8 are developed in functional layer 4. Deflectable electrode 7 is realized in the form of a metallization of pressure diaphragm 31 in this instance. Here, too, the very high specific resistance of layer 3 based on silicon carbonitride prevents the occurrence of leakage currents between deflectable electrodes 7 and the layer structure of component 102.

[0027] In contrast to the two pressure-sensor elements 101 and 102 described above, in microphone component 200 shown in FIG. 2 it is not microphone diaphragm 211 but rather stationary element 231 that is developed in a layer 230 based on silicon carbonitride.

[0028] Microphone diaphragm 211 of component 200 is realized in a thin poly-silicon layer 210 on component substrate 10. It spans an opening 240 in the rear side of the component. To produce the microphone structure, a silicon-oxide sacrificial layer 220 was produced above poly-silicon diaphragm layer 210, whose thickness defines the clearance between microphone diaphragm 211 and counterelement 231. This sacrificial layer 220 was structured above the edge region of microphone diaphragm 211 in order to create mechanical stops 232 for restricting the diaphragm deflection. The sacrificial layer above the center region of microphone diaphragm 211 was not structured. An electrically conductive layer 235, such as a doped poly-silicon layer or a metallization, was deposited on this closed layer region and structured. A relatively thick silicon carbonitride-based layer 230 was then deposited on top of sacrificial layer 220 structured and coated in this manner and structured. In the process, through holes 233 were created in the region above microphone diaphragm 211, which also extend through electrically conductive layer 235.

[0029] Microphone diaphragm 211 and counterelement 231 were exposed only subsequent to this structuring process by removing the material of the sacrificial layer again in a HF vapor-phase etching process via through holes 233 in layer 230 based on silicon carbonitride. In so doing, mechanical stops 232 in the edge region of counterelement 231 were exposed too, since the material of silicon carbonitride-based layer 230 was not attacked during the sacrificial layer etching process.

[0030] Depending on the mounting of component 200, the sound-pressure application of microphone diaphragm 211 may take place either via rear-side opening 240 in component substrate 10 or also via through holes 233 in counterelement 231. The deflections of microphone diaphragm 211 are converted into electrical signals with the aid of a microphone-capacitor system. Here, poly-silicon microphone diaphragm 211 functions as deflectable electrode of this microphone capacitor and cooperates with a counter electrode which is developed in conductive layer 235 on the underside of self-supporting counterelement 231. Since counterelement 231 is acoustically permeable on account of through holes 233, the position of counter electrode 235 is fixed in relation to microphone diaphragm 211.

[0031] The sensor structure of component 300 shown in FIG. 3 is also realized in a layer structure on a silicon substrate 10. In the process the substrate surface was first provided with a silicon-oxide passivation 11 on which a first silicon carbonitride layer 12 was then deposited. The electrical contacting of the sensor structure takes place via a wiring layer 13 that was applied on silicon carbonitride layer 12 and structured in a suitable manner. In the exemplary embodiment described here, this is a thin, doped poly-silicon layer 13. However, the electrical contacting of the sensor structure could also be realized in the form of a metallization. Then, a silicon-oxide sacrificial layer 14 was deposited on structured wiring layer 13 and structured. In the process, sacrificial layer 14 was opened up in the region of a stationary electrode 22 and a through contact 30 via which wiring layer 13 is able to be contacted. A thick functional layer 15 as micromechanical functional layer was deposited on top thereof. In a first structuring process, first trenches 16 were created, which extend across entire functional layer 15 and partly also across entire sacrificial layer 14 and wiring layer 13 down to silicon carbonitride layer 12. Then, a further silicon carbonitride layer 17 was deposited on functional layer 15 thus structured, and trenches 16 were filled in the process. In this way, individual regions in functional layer 15 were electrically decoupled such as through contact 30. Silicon carbonitride layer 17 was then also provided with a metallization 18 in which circuit traces and connection pads were developed. Only then was silicon carbonitride layer 17 removed again at least regionally from the surface of functional layer 15 in order to create further trenches 19 for the definition of the sensor structure in these layer regions. Individual layer regions 21 and 22 of functional layer 15 were mechanically and also electrically decoupled in the process.

[0032] The sensor structure thus defined is finally exposed in a sacrificial-layer etching process, during which the sacrificial-layer material underneath functional layer 15 was at least regionally removed via trenches 19. Silicon carbonitride layer 17 and filled trenches 16 acted as etch stop during this etching process.

[0033] The sensor structure thus produced includes a plurality of seismic masses 21, which are developed in functional layer 15 and are linked via self-supporting structural elements 171 in silicon carbonitride layer 17 to the layer structure so that they are deflectable in the layer plane, that is to say, laterally. These seismic masses 21 function as deflectable electrodes of a capacitor system for the acquisition of measured values. Stationary counter electrodes 22 of this capacitor system are likewise developed in functional layer 15 and connected both mechanically and electrically to wiring layer 13.

[0034] The sensor structure of component 400 shown in FIG. 4 includes two bending-beam systems which mesh with one another in the form of a comb and respectively include three self-supporting bending beams 401 and 402, which are developed in a layer structure on a component substrate 410 and extend beyond a cavity 411 in substrate 410. The layer structure is made up of a plurality of layers which are not described here in greater detail, and is sealed by a silicon carbonitride layer 420 having a metallization 430. Two interdigital electrodes 431 and 432 are developed in metallization 430 according to the form of the two bending-beam systems, which jointly form a measuring-capacitor system for detecting lateral deflections of the bending-beam systems.