Radiofrequency and other electronic devices formed from enhanced resonant frequency hexaferrite materials
11245169 · 2022-02-08
Assignee
Inventors
Cpc classification
C01P2004/61
CHEMISTRY; METALLURGY
H01F1/348
ELECTRICITY
C04B2235/604
CHEMISTRY; METALLURGY
H04B1/38
ELECTRICITY
C01G51/40
CHEMISTRY; METALLURGY
C04B2235/3201
CHEMISTRY; METALLURGY
C04B2235/3275
CHEMISTRY; METALLURGY
C01G49/0036
CHEMISTRY; METALLURGY
C04B2235/767
CHEMISTRY; METALLURGY
C04B2235/5445
CHEMISTRY; METALLURGY
H01Q1/50
ELECTRICITY
C04B2235/3215
CHEMISTRY; METALLURGY
International classification
C04B35/626
CHEMISTRY; METALLURGY
H01F1/00
ELECTRICITY
H04B1/38
ELECTRICITY
Abstract
Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba.sub.3Co.sub.2Fe.sub.24O.sub.41 (Co.sub.2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.
Claims
1. A method of forming an enhanced resonant frequency ferrite material, the method comprising: forming a fine gram hexagonal ferrite powder comprising a Z-phase barium cobalt hexagonal ferrite material having a formula Ba.sub.3Co.sub.2Fe.sub.24O.sub.41, the hexagonal ferrite powder having a surface area of greater than 8 m.sup.2/g, an average particle size of between 300-600 nm, and a grain size between about five micrometers and one millimeter in diameter; and firing the hexagonal ferrite powder at a sintering temperature between 1100 and 1150° C.
2. The method of claim 1 wherein the hexagonal ferrite powder has a surface area of greater than about 15 m.sup.2/g.
3. The method of claim 1 wherein the hexagonal ferrite powder has a surface area of between 8 and about 15 m.sup.2/g.
4. The method of claim 1 further comprising magnetically texturing the barium cobalt hexagonal ferrite material.
5. The method of claim 4 wherein the magnetically texturing occurs in a rotating magnetic field.
6. The method of claim 1 wherein the forming comprises zeta-milling.
7. The method of claim 1 further comprising incorporating the enhanced resonant frequency ferrite material into a magnetic isolator.
8. The method of claim 7 further comprising incorporating the magnetic isolator into a radio-frequency communication system.
9. A method of forming a ferrite material, the method comprising: forming a fine grain hexagonal ferrite powder comprising a Z-phase barium cobalt hexagonal ferrite material having a formula Ba.sub.3Co.sub.2Fe.sub.24O.sub.41, the hexagonal ferrite powder having a surface area of greater than 6 m.sup.2/g, an average particle size of less than 1 micron; and firing the hexagonal ferrite powder at a sintering temperature between 1100 and 1150° C.
10. The method of claim 9 further comprising magnetically texturing the barium cobalt hexagonal ferrite material.
11. The method of claim 10 wherein the magnetically texturing occurs in a rotating magnetic field.
12. The method of claim 9 wherein the forming comprises zeta-milling.
13. The method of claim 9 wherein the hexagonal ferrite powder has an average particle size of between 0.2 to 0.9 micron.
14. The method of claim 9 wherein the hexagonal ferrite powder has a particle size of between 300-600 nm.
15. The method of claim 9 wherein the hexagonal ferrite powder has a grain size between about five micrometers and one millimeter in diameter.
16. The method of claim 9 wherein the hexagonal ferrite powder has an average surface area of greater than 8 m.sup.2/g.
17. The method of claim 9 wherein the hexagonal ferrite powder has a surface area of greater than 15 m.sup.2/g.
18. The method of claim 9 wherein the hexagonal ferrite powder has a surface area of between 8 and about 15 m.sup.2/g.
19. The method of claim 9 further comprising incorporating the enhanced resonant frequency ferrite material into a magnetic isolator.
20. The method of claim 19 further comprising incorporating the magnetic isolator into a radio-frequency communication system.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
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DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
(9) Magnetic materials are preferred in high frequency applications such as antennas, transformers, inductors, circulators, and absorbers because of certain favorable material properties. Some of the desirable properties afforded by magnetic materials are favorable miniaturizing factors, reduced field concentration, and better impedance match. Hexagonal ferrite systems, in particular, are desirable because of their high magnetic permeability and absorption at microwave (100 MHz-20 GHz) frequencies. Hexagonal ferrite systems include crystal structures that are generally intergrowths between magnetoplumbite and spinel structures containing barium (Ba) or strontium (Sr), a divalent cation such as iron (Fe), cobalt (Co), nickel (Ni) or manganese (Mn) and trivalent Fe. The hexagonal ferrite may be formed in a variety of different crystal structures based on the magnetoplumbite cell. These structures include M-phase (BaFe.sub.12O.sub.19), W-phase (BaMe.sub.2Fe.sub.16O.sub.27), Y-phase (Ba.sub.2Me.sub.2Fe.sub.12O.sub.22) and Z-phase (Ba.sub.3Me.sub.2Fe.sub.24O.sub.42).
(10) Embodiments of the present invention disclose methods and processing techniques for improving performance characteristics of hexagonal ferrite materials used in high frequency applications. Certain preferred embodiments provide improved methods and processing techniques for manufacturing Z-phase hexagonal ferrite systems Ba.sub.3Co.sub.2Fe.sub.24O.sub.42(Co.sub.2Z) that have reduced magnetorestriction, improved resonant frequency, and extended magnetic permeability at higher frequencies.
(11) Relative permeability and relative permittivity are properties indicative of the performance of a magnetic material in high frequency applications. Relative permeability is a measure of the degree of magnetization of a material that responds linearly to an applied magnetic field relative to that of free species (μ.sub.r=μ/μ.sub.o). Relative permittivity (ε.sub.r) is a relative measure of the electronic polarizability of a material to the polarizability of free species (ε.sub.r=ε/ε.sub.o). Generally, permeability (μ) can be separated into two components: spin rotational X.sub.sp which is in response for high frequency, and domain wall motion X.sub.dw which is damped out at microwave frequencies. Permeability can be generally represented by μ′=1+X.sub.dw+X.sub.sp.
(12) Unlike spinels, Co.sub.2Z systems typically have a non-cubic unit cell, planar magnetization, and an anisotropic spin-rotation component to permeability. Spin rotation anisotropy is also a consideration in preparing Co.sub.2Z for high frequency applications. Large anisotropy fields (H.sub.θ) are similar to applying an external magnetic field which increases resonant frequency, whereas small anisotropy fields (H.sub.φ) improve permeability. H.sub.θ is generally strong in hexagonal ferrites, such as Co.sub.2Z. As such, domain formation out of the basal plane is suppressed and the material becomes self-magnetizing. The relationship between permeability and rotational stiffness can be represented by the formula (μ.sub.o−1)/4π=(⅓)(M.sub.s/H.sub.θ.sup.A+M.sub.s/H.sub.φ.sup.A). For isotropic rotational stiffness in connection spinels and c-axis oriented hexagonal ferrites, the relationship can be represented as follows: (μ.sub.o−1)/4π=(⅔)(M.sub.s/H.sup.A). For cases where H.sub.θ.sup.A does not equal to H.sub.φ.sup.A: f.sub.res (μ.sub.o−1)=4/3 ψM.sub.s [½ (H.sub.θ.sup.A/H.sub.φ.sup.A)+½(H.sub.φ.sup.A/H.sub.θ.sup.A)]. It is believed that the larger the difference in rotational stiffness, the greater the self magnetization field and the greater the resonant frequency, which could push the resonant frequency into the microwave region. Permeability drops quickly above resonance frequency.
(13) Certain aspects of the present disclosure provide processing techniques for increasing the permeability of Co.sub.2Z at higher frequencies. In one implementation, the processing techniques involve methods of magnetic texturing of Co.sub.2Z to result in a textured Co.sub.2Z with improved magnetic properties. In one embodiment, the method of magnetic texturing used in forming Co.sub.2Z involves using a reaction sintering method, which includes the steps of aligning M-phase (BaFe.sub.12O.sub.9 uniaxial magnetization) with non-magnetic additives in a static magnetic field and reacting with BaO source and CoO to form Z-phase (Ba.sub.3Me.sub.2Fe.sub.24O.sub.42). In another embodiment, the method of magnetic texturing used in forming Co.sub.2O involves using a rotating magnetic field method, which includes the steps of aligning Co.sub.2Z phase (planar magnetization) with magnetic texturing occurring in a rotating magnetic field. The inventor has found that the degree of alignment, thus permeability gain, is far superior in a rotating magnetic field.
(14) In some embodiments, the processing technique for forming Co.sub.2Z includes making Z phase Fe deficient to inhibit reduction of Fe as the inventor believes that dielectric and magnetic loss is increased by reduction of Fe (Fe.sup.3+.fwdarw.Fe.sup.2+) at high temperatures. The processing technique includes the step of heat treatment or annealing in oxygen to inhibit reduction of Fe and cause Fe.sup.2+.fwdarw.Fe.sup.3. In other embodiments, the processing technique includes doping the Co.sub.2Z with additives such as potassium and alkali metals to increase the resonance frequency, and hence increase Q at higher frequency ranges.
(15) In some other embodiments, the processing technique for forming Co.sub.2Z includes forming fine grain hexagonal ferrite particles. The process involves using high energy milling to reduce the particle size. The following chart shows that in one embodiment, high energy milling is used to produce Co.sub.2Z particle size in the range of 0.2 to 0.9 microns and surface area of 8-14 m.sup.2/g. In this embodiment, the firing temperature is preferably 1150 to 1250° C.
(16) TABLE-US-00001 Grain Size Surface Firing (Intercept Process Particle Size Area Temp. Method) Standard D50 = 1-5 1-3 m.sup.2/g 1250- 10-30 microns Milling microns 1350° C. High Energy D50 = 0.2-0.9 8-14 m.sup.2/g 1150- 2-15 microns Milling microns 1250° C.
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(18) The blended mixture may then be dried if necessary in Step 104. The mixture may be dried in any of a number of ways, including, for example, pan drying or spray drying. The dried mixture may then be heated in Step 106 at a temperature and for a period of time to promote calcination. For example, the temperature in the heating system used in heating Step 106 may increase at a rate of between about 20° C. per hour and about 200° C. per hour to achieve a soak temperature of about 1100° C.-1300° C., or about 1100° C. to 1250° C., which may be maintained for about two hours to about twelve hours. The heating system may be, for example, an oven or a kiln. The mixture may experience a loss of moisture, and/or reduction or oxidation of one or more components, and/or the decomposition of carbonates and/or organic compounds which may be present. At least a portion of the mixture may form a hexaferrite solid solution
(19) The temperature ramp rate, the soak temperature, and the time for which the mixture is heated may be chosen depending on the requirements for a particular application. For example, if small crystal grains are desired in the material after heating, a faster temperature ramp, and/or lower soak temperature, and/or shorter heating time may be selected as opposed to an application where larger crystal grains are desired. In addition, the use of different amounts and/or forms of precursor materials may result in different requirements for parameters such as temperature ramp rate and soaking temperature and/or time to provide desired characteristics to the post-heated mixture.
(20) After heating, the mixture, which may have formed agglomerated particles of hexaferrite solid solution, may be cooled to room temperature, or to any other temperature that would facilitate further processing. The cooling rate of the heating system may be, for example, 80° C. per hour. In step 108, the agglomerated particles may be milled. Milling may take place in water, in alcohol, in a ball mill, a vibratory mill, or other milling apparatus. In some embodiments, the milling is continued until the median particle diameter of the resulting powdered material is from about one to about four microns, although other particle sizes, for example, from about one to about ten microns in diameter, may be acceptable in some applications. In a preferred embodiment, high energy milling is used to mill the particles to a fine particle size of 0.2 to 0.9 microns in diameter. This particle size may be measured using, for example, a sedigraph or a laser scattering technique. A target median particle size may be selected to provide sufficient surface area of the particles to facilitate sintering in a later step. Particles with a smaller median diameter may be more reactive and more easily sintered than larger particles. In some methods, one or more alkali metals or alkali metal precursors or other dopant materials may be added at this point rather than, or in addition to, in step 102.
(21) The powdered material may be dried if necessary in step 110 and the dried powder may be pressed into a desired shape using, for example, a uniaxial press or an isostatic press in step 112. The pressure used to press the material may be, for example, up to 80,000 N/m, and is typically in the range of from about 20,000 N/m to about 60,000 N/m.sup.2. A higher pressing pressure may result in a more dense material subsequent to further heating than a lower pressing pressure.
(22) In step 114, the pressed powdered material may be sintered to form a solid mass of doped hexaferrite. The solid mass of doped hexaferrite may be sintered in a mold having the shape of a component desired to be formed from the doped hexaferrite. Sintering of the doped hexaferrite may be performed at a suitable or desired temperature and for a time period sufficient to provide one or more desired characteristics, such as, but not limited to, crystal grain size, level of impurities, compressibility, tensile strength, porosity, and in some cases, magnetic permeability. Preferably, the sintering conditions promote one or more desired material characteristics without affecting, or at least with acceptable changes to other undesirable properties. For example, the sintering conditions may promote formation of the sintered doped hexaferrite with little or minimal iron reduction. In one embodiment, the temperature used in the sintering step 114 is preferably between 1100° C. to 1250° C. According to some embodiments, the temperature in the heating system used in the sintering step 114 may be increased at a rate of between about 20° C. per hour and about 200° C. per hour to achieve a soak temperature of about 1150° C.-1450° C. or about 1100° C. to 1150° C. or about 1100° C.-1250° C. which may be maintained for about two hours to about twelve hours. The heating system may be, for example, an oven or a kiln. A slower ramp, and/or higher soak temperature, and/or longer sintering time may result in a more dense sintered material than might be achieved using a faster temperature ramp, and/or lower soak temperature, and/or shorter heating time. Increasing the density of the final sintered material by making adjustments, for example, to the sintering process can be performed to provide a material with a desired magnetic permeability, saturation magnetization, and/or magnetostriction coefficient. According to some embodiments of methods according to the present invention, the density range of the sintered hexaferrite may be between about 4.75 g/cm.sup.3 and about 5.36 g/cm.sup.3. A desired magnetic permeability of the doped hexaferrite may also be achieved by tailoring the heat treatment of the material to produce grains with desired sizes.
(23) The grain size of material produced by embodiments of the above method may vary from between about five micrometers and one millimeter in diameter depending upon the processing conditions, with even larger grain sizes possible in some aspects of methods according to the present invention. In some aspects, each crystal of the material may comprise a single magnetic domain. Both doped CO.sub.2Z and un-doped CO.sub.2Z may be members of the planar hexaferrite family called ferroxplana, having a Z-type ferrite crystal structure.
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(32) Provided herein are various non-limiting examples of composition, materials, and methods of preparing the materials for electronic applications. While the above detailed description has shown, described, and pointed out novel features of the invention as applied to various embodiments, it will be understood that various omissions, substitutions, and changes in the form and details of the device or process illustrated may be made by those skilled in the art without departing from the spirit of the invention. As will be recognized, the present invention may be embodied within a form that does not provide all of the features and benefits set forth herein, as some features may be used or practiced separated from others.