Method and apparatus for forming a substrate web track in an atomic layer deposition reactor
09745661 · 2017-08-29
Assignee
Inventors
Cpc classification
C23C16/458
CHEMISTRY; METALLURGY
International classification
C23C16/54
CHEMISTRY; METALLURGY
C23C16/458
CHEMISTRY; METALLURGY
Abstract
An apparatus and method for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor by moving a first set of support rolls in relation to a second set of support rolls.
Claims
1. A method comprising: forming a substrate web track with a repeating pattern into a reaction vessel of an atomic layer deposition reactor by moving a first set of support rolls from a first side of a second set of support rolls to another side of the second set of support rolls; and supporting the substrate web by the first and second sets of support rolls when the track has been formed.
2. The method of claim 1, comprising forming a track of a pleated form by pushing the substrate web by the first set of support rolls to the other side of the second set of the support rolls.
3. The method of claim 1, comprising forming inside the reaction vessel a three-dimensional atomic layer deposition flow volume defined by a reaction vessel lid, reaction vessel sidewalls and the formed substrate web track.
4. The method of claim 1, comprising removing gases from the reaction space, during deposition, via a route travelling through the first set of support rolls.
5. The method of claim 1, wherein a substrate web source roll is integrated into a chamber lid of the deposition reactor.
6. The method of claim 1, wherein the substrate web is fed into a reaction chamber or reaction space through a reaction chamber lid.
7. An atomic layer deposition reactor, comprising: a reaction vessel configured to provide a reaction space; a first set of support rolls; a second set of support rolls, wherein the first and second sets of support rolls are configured to form a substrate web track with a repeating pattern into the reaction vessel by moving the first set of support rolls in relation to the second set of support rolls; and the first and second sets of support rolls are configured to support the substrate web when the track has been formed; the deposition reactor further comprising a mechanism configured to move the first set of support rolls from a first side of the second set of support rolls to another side of the second set of support rolls.
8. The deposition reactor of claim 7, wherein the first and second sets of support rolls are configured to form a track of a pleated form by pushing the substrate web by the first set of support rolls to the other side of the second set of the support rolls.
9. The deposition reactor of claim 7, wherein deposition reactor is configured to remove gases from the reaction space, during deposition, via a route travelling through the first set of support rolls.
10. The deposition reactor of claim 7, wherein a substrate web source roll is integrated into a chamber lid of the deposition reactor.
11. The deposition reactor of claim 7, wherein a chamber lid of the deposition reactor comprises a feedthrough configured to feed the substrate web into the reaction chamber or reaction space through the chamber lid.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1) The invention will now be described, by way of example only, with reference to the accompanying drawings, in which:
(2)
(3)
(4)
DETAILED DESCRIPTION
(5) In the following description, Atomic Layer Deposition (ALD) technology is used as an example. The basics of an ALD growth mechanism are known to a skilled person. As mentioned in the introductory portion of this patent application, ALD is a special chemical deposition method based on the sequential introduction of at least two reactive precursor species to at least one substrate. The at least one substrate is exposed to temporally separated precursor pulses in the reaction chamber to deposit material on the substrate surfaces by sequential self-saturating surface reactions. In the context of this application, the term ALD comprises all applicable ALD based techniques and any equivalent or closely related technologies, such as, for example MLD (Molecular Layer Deposition) and PEALD (Plasma Enhanced Atomic Layer Deposition) techniques.
(6) A basic ALD deposition cycle consists of four sequential steps: pulse A, purge A, pulse B and purge B. Pulse A consists of a first precursor vapor and pulse B of another precursor vapor. Inactive gas and a vacuum pump are typically used for purging gaseous reaction by-products and the residual reactant molecules from the reaction space during purge A and purge B. A deposition sequence comprises at least one deposition cycle. Deposition cycles are repeated until the deposition sequence has produced a thin film or coating of desired thickness. Deposition cycles can also be more complex. For example, the cycles can include three or more reactant vapor pulses separated by purging steps. All these deposition cycles form a timed deposition sequence that is controlled by a logic unit or a microprocessor.
(7) In certain example embodiments as described in the following, there is provided a method and apparatus for forming a substrate web track with a repeating pattern into a reaction space of a deposition reactor.
(8) In the embodiment shown in
(9) The chamber lid comprises a feedthrough through which the substrate web 15 on the source roll 11 travels from one side of the lid to the other side of the lid. In the event the chamber lid is a dual-lid system, there may be a feedthrough through both lids 21 and 22 depending on the implementation. On the reaction chamber side of the chamber lid, the route of the substrate web extends substantially vertically downwards. The vertically extending route turns at a first edge roll 17 of a first set of support rolls. The route continues in a substantially horizontal direction passing a center roll 27 of the first set of support rolls (in other embodiments, there may be zero or more than one center/intermediate roll). The horizontally extending route, in turn, turns at a second edge roll 37 of the first set of support rolls upwards, and extends substantially vertically upwards until it reaches the chamber lid.
(10) A substrate web destination roll 12 is integrated to the chamber lid. In the event of the dual-lid system, the destination roll 12 is integrated either to the reaction chamber lid 22 or, as shown in
(11) The chamber lid comprises a feedthrough through which the substrate web 15 travels from one side of the lid to the other side of the lid and is finally wound up onto the destination roll 12. In the event the chamber lid is a dual-lid system, there may be a feedthrough through both lids 21 and 22 depending on the implementation.
(12) The first set of support rolls are integrated to the chamber lid by respective support stems 16, 26 and 36. There may be one or more support stems depending on the implementation.
(13) In the event of the dual-lid system, the at least one support stem may be attached to the reaction chamber lid 22. Alternatively, the at least one support stem may be attached to the vacuum chamber lid 21, or to both lids. In yet an alternative, the at least one support stem may merely go through the reaction chamber lid 22 at a feedthrough and be attached to the vacuum chamber lid 21. In yet an alternative, the at least one support stem go through the whole chamber lid or lid system by feedtrough(s), and is attached to a support point on the outside of the reaction chamber or on the outside of the vacuum chamber. In all of these embodiments, the at least one support stem or similar is considered to be integrated to the chamber lid (or to the reaction chamber lid).
(14) The deposition reactor 10 comprises a second set of support rolls in the reaction chamber 44. The rolls of the second set may be rotatable mounted, for example, to the reaction chamber wall 42. The rolls of the second set of support rolls can consist of at least one roll. Preferable, the second set of support rolls comprises at least two rolls. If there are more than two rolls, then the second set comprises both edge rolls and intermediate rolls. In
(15) The deposition reactor 10 is a reactor that is loadable from the top side of the reactor. The deposition reactor comprises the chamber lid on the top side of the reaction chamber 44 and an exhaust line 43 at the bottom side of the reaction chamber 44. The deposition reactor 10 further comprises the required precursor vapor in-feed lines and purge gas in-feed lines (denoted by reference numerals 46 and 47 in
(16) A substrate web track with a repeating pattern as shown in
(17) The first set of support rolls can be moved by a mechanism, such as the at least one support stem shown in
(18) The in-feed lines 46 and 47 in the embodiment shown in
(19) In certain example embodiments, the method comprises removing gases from the reaction space, during deposition, via a route travelling through the first set of support rolls. The rolls 17-37 of the first set of rolls may be partially open at the ends and on the sides of the rolls. The gases exit the reaction space via the open ends of the rolls 17-37 to the exhaust line 43 as shown by the arrows in
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(22) The module 70 comprises a first set of substrate web support rolls 66 and a second set of substrate web support rolls 67 similarly as described in the foregoing embodiments. A general reference is made to the foregoing embodiments as to the structure and operation of the support rolls. The second set of rolls 67 is stationary while the first set of rolls 66 can be moved. A movement mechanism 68 for moving the first set of rolls 66 is attached to the reaction chamber wall (as shown in
(23) A substrate web track with a repeating pattern as shown in
(24) The reaction chamber further comprises an apertures 69 at the point to which the first set of support rolls 66 move by the vertical movement so that gases can exit via the ends of first set of support rolls 66 similarly as in the foregoing embodiments.
(25) The precursor vapor may be fed into the reaction vessel from the top through (one or more channels in) the reaction vessel lid part 71. In certain example embodiments, the precursor vapor is fed via a channel formed inside at least one support stem 61 and/or 62. The module forms inside the reaction vessel a three-dimensional atomic layer deposition flow volume defined by the reaction vessel lid part 71, reaction vessel sidewalls and the formed substrate web track.
(26) Without limiting the scope and interpretation of the patent claims, certain technical effects of one or more of the example embodiments disclosed herein are listed in the following: A technical effect is automatic track formation by moving a first set of support rolls in relation to a second set of support rolls. Another technical effect is achieving a top-to-bottom flow by removing gases from the reaction space via a route travelling through the first (i.e., lower) set of support rolls.
(27) It should be noted the some of the functions or method steps discussed in the preceding may be performed in a different order and/or concurrently with each other. Furthermore, one or more of the above-described functions or method steps may be optional or may be combined.
(28) The foregoing description has provided by way of non-limiting examples of particular implementations and embodiments of the invention a full and informative description of the best mode presently contemplated by the inventors for carrying out the invention. It is however clear to a person skilled in the art that the invention is not restricted to details of the embodiments presented above, but that it can be implemented in other embodiments using equivalent means without deviating from the characteristics of the invention.
(29) Furthermore, some of the features of the above-disclosed embodiments of this invention may be used to advantage without the corresponding use of other features. As such, the foregoing description should be considered as merely illustrative of the principles of the present invention, and not in limitation thereof. Hence, the scope of the invention is only restricted by the appended patent claims.