Radio frequency (RF) antenna element with a (de) tuning system
11243279 ยท 2022-02-08
Assignee
Inventors
Cpc classification
G01R33/3664
PHYSICS
G01R33/3692
PHYSICS
G01R33/3657
PHYSICS
International classification
Abstract
A radio frequency (RF) antenna element with a (de)tuning system, with the RF antenna element having a resonant electrically conductive loop and a (de)tuning system including a photosensitive switching element to (de)tune the resonant electrically conductive loop. The (de)tuning system comprises an injection optical source optically coupled to the photosensitive switching element.
Claims
1. A radio frequency (RF) antenna element for magnetic resonance imaging (MRI), wherein the RF antenna element comprises a resonant electrically conductive loop and a detuning system comprising a photosensitive switching element configured to detune the resonant electrically conductive loop, wherein the detuning system comprises; an injection optical source optically coupled to the photosensitive switching element; a photodetector in parallel with the photosensitive switching element; and a bias optical source optically coupled to the photodetector, wherein the photodetector is configured to generate a negative bias voltage over the photosensitive switching element in response to incident radiation from the bias optical source.
2. The radio frequency (RF) antenna element of claim 1, further comprising an electrical interface circuit with at least one inductance in series with the photosensitive switching element and a resistor in parallel to the photodetector.
3. The radio frequency (RF) antenna element of claim 1, wherein the photosensitive switching element is formed by back-to-back circuited photodiodes.
4. The radio frequency (RF) antenna element of claim 1, wherein the injection optical source and the bias optical source are formed by a common optical source with an optically switching system configured to independently optically couple the common optical source to the injection optical source and to the bias optical source, respectively.
Description
BRIEF DESCRIPTION OF THE DRAWINGS
(1)
(2)
DETAILED DESCRIPTION OF THE EMBODIMENTS
(3)
(4) The photosensitive switching element may be a simple pin-(photo)diode or alternatively back-to-back circuited pin-(photo)diodes may be used.
(5)
(6) Instead of switching-off of the injection optical source and the bias optical source, the optical links 112,113 might be interrupted.
(7) The photodetector may be a GaN-based semiconductor laser or a InGaN blue LED which may generate up to 75V negative bias voltage.