Precision cut high energy crystals

Abstract

Crystals having a modified regular tetrahedron shape are provided. Crystals preferably have four substantially identical triangular faces that define four truncated vertices and six chamfered edges. The six chamfered edges can have an average length of l, and an average width of w, and 8≦l/w≦9.5.

Claims

1. A method of cutting a crystalline composition comprising a synthetic quartz to have a modified regular tetrahedral shape, comprising: cutting the crystalline composition to produce a cut crystalline composition; wherein the cut crystalline composition includes four truncated vertices and six chamfered edges; and wherein the six chamfered edges have an average length of 1, and an average width of w, and wherein 8≦l/w≦9.5.

2. The method of claim 1, wherein no fused quartz is formed when cutting the crystalline composition.

3. The method of claim 1, wherein the composition essentially consists of the synthetic quartz.

4. The method of claim 1, wherein the cut crystalline composition has four faces, and wherein each of the four faces has a surface roughness of ≦10 Angstroms RMS.

5. The method of claim 1, wherein the six edges have lengths that differ by no more than 1%.

6. The method of claim 1, wherein the six edges have widths that differ by no more than 1%.

7. The method of claim 1, wherein 8.3≦l/w≦9.2.

8. The method of claim 1, wherein 8.7≦l/w≦8.8.

9. The method of claim 1, wherein the cut crystalline composition has four faces, and wherein each of the four truncated vertices are parallel to at least one of the four faces.

10. The method of claim 1, wherein each of the four truncated vertices comprises three sides y, and wherein 1.3≦y/w≦1.7.

11. The method of claim 10, wherein 1.4≦y/w≦1.5.

12. The method of claim 10, wherein each of the four truncated vertices comprises three sides z, and wherein 0.8≦z/w≦1.2.

13. The method of claim 12, wherein z/w is 1±2%.

Description

BRIEF DESCRIPTION OF THE DRAWING

(1) FIG. 1A is a top view illustration of a crystal of the inventive subject matter.

(2) FIG. 1B is a side view illustration of a crystal of the inventive subject matter.

DETAILED DESCRIPTION

(3) The following description includes information that may be useful in understanding the present invention. It is not an admission that any of the information provided herein is prior art or relevant to the presently claimed invention, or that any publication specifically or implicitly referenced is prior art.

(4) The following discussion provides many example embodiments of the inventive subject matter. Although each embodiment represents a single combination of inventive elements, the inventive subject matter is considered to include all possible combinations of the disclosed elements. Thus if one embodiment comprises elements A, B, and C, and a second embodiment comprises elements B and D, then the inventive subject matter is also considered to include other remaining combinations of A, B, C, or D, even if not explicitly disclosed.

(5) The inventive subject matter provides compositions and methods in which a piezoelectric hydrothermally grown synthetic quartz crystal is precision cut to form a tetrahedron that is perfectly aligned with the molecular structure of the quartz crystal along the z (or c) and x+ axes. The quartz should be crystalline and include no fused or amorphous silica (SiO.sub.2) (or substantially no fused or amorphous silica (SiO.sub.2)). Viewed from a different perspective, the alignment is preferably within one degree of the arc in both the z and x+ axes.

(6) Crystals of the inventive subject matter are preferably cut to accord with geometric equations. In preferred embodiments, the uncut edge of the starting tetrahedron is derived from the geometric mean between the proton and the Planck radii and applied to the proton to crystal uncut tetrahedron edge, giving an uncut edge constant (root value) of e=26.9610 mm and giving h, height, by geometric derivation

(7) $h=e\sqrt{\frac{2}{3}}.$
Therefore the uncut height of the tetrahedron h (where the root value is 26.9610 mm)=22.0136 mm. Additionally or alternatively, the cut a.sub.c of each of the 4 apices is defined

(8) $a_c={h\left(\frac{1}{\phi }\right)}^{3}m\mathrm{where}\mathrm{phi},\phi =\frac{\left(\sqrt{5}+1\right)}{2},$
is the “golden ratio.” The chamfers of the edges are defined as:

(9) $c_e=\frac{h}{2}\times \frac{e}{h}\times {\left(\frac{1}{\phi }\right)}^6\times \left(1-{\left(\frac{1}{\phi }\right)}^3\right).$
One skilled in the art will appreciate that the golden ratio, φ is related to the Fibonacci series and any number in the series, n, can be calculated using the equation:

(10) $F_{\left(n\right)}=\frac{{\phi }^n-{\left(-\phi \right)}^{-n}}{\sqrt{5}}.$

(11) In some preferred embodiments, crystals are cut from a precisely lattice-oriented block of extremely pure, synthetically grown SiO.sub.2 lumbered hydrothermal optical quality quartz. It is contemplated that some crystals of the inventive subject matter can be right-handed quartz crystals. It is also contemplated that multiple crystals can be cut from a single synthetic quartz bar. For example, 25 crystals can be produced from 25 pieces of 20 mm×20 mm×20 mm synthetic quartz that are cut from a quartz bar that is 76.1-76.3 mm in length, 240-265 mm in width, and 23-23.3 mm in depth. As another example, crystals can be produced from a synthetic quartz bar having the following dimensions 88.0±0.1 mm (x) by 30.0±0.2 mm (z) by 240 mm or more (y), and have an infrared Q value (precision of oscillation in the electrical domain) of at least 3 million.

(12) The crystals are preferably cut in a manner such that no fused or amorphous SiO.sub.2 is used or created by any procedure in the manufacturing process as fused quartz becomes amorphous and cannot behave in the electrical or energy domains in the same way as pure synthetic crystalline quartz.

(13) Viewed from a different perspective, crystals are preferably cut such that no more than two molecular layers of material may be fused at any cutting plane or edge in the final product. This can be achieved where the cutting and polishing process does not heat the crystal in near or in excess of 573° C., which is transition temperature to fused quartz. Therefore, crystals of the inventive subject matter are preferably cut from pure synthetic crystalline block, and excessive heating is avoided during the manufacturing process.

(14) FIGS. 1A-1B show top and side view illustrations of a crystal of the inventive subject matter that is cut in accordance with the aforementioned equations. It should be noted that crystals cut according to the equations of the inventive subject matter could be based on any suitable root number, and such root number is not limited to 26.9610 mm.

(15) As shown in FIGS. 1A-1B, a crystal 100 of the inventive subject matter includes four truncated vertices 110a, 110b, 110c and 110d, and six chamfered edges 120a, 120b, 120c, 120d, 120e and 120f. In the embodiment shown, each of the truncated vertices are six sided, wherein three sides have a first length of 2.684 mm±0.2 mm, and wherein the remaining three sides have a second length of 1.840 mm±0.2 mm Preferably the sides of the truncated vertices alternate between the first length and the second length, and a distance from an end of a first side to an end of a second adjacent side is 3.918 mm±0.2 mm. Each of the six chamfered edges is rectangular in shape and dimensioned as 16.072 mm±0.2 mm by 1.840 mm±0.2 mm.

(16) Crystal 100 could result from a crystal having an uncut edge or root value of, for example, 26.9610 mm, and an uncut height of 22.0136 mm±0.2 mm, wherein the crystal is cut in accordance with the following: h, height, by geometric derivation

(17) $h=e\sqrt{\frac{2}{3}}.$
Additionally, The cut or truncation a.sub.c of each of the 4 apices/vertices is defined

(18) $a_c={h\left(\frac{1}{\phi }\right)}^{3}m$
where phi,

(19) $\phi =\frac{\left(\sqrt{5}+1\right)}{2},$
is the “golden ratio.” The chamfer of the edges is defined as:

(20) $c_e=\frac{h}{2}\times \frac{e}{h}\times {\left(\frac{1}{\phi }\right)}^6\times \left(1-{\left(\frac{1}{\phi }\right)}^3\right).$
One skilled in the art will appreciate that the golden ratio, φ, is related to the Fibonacci series and any number in the series, n, can be calculated using the equation:

(21) $F_{\left(n\right)}=\frac{{\phi }^n-{\left(-\phi \right)}^{-n}}{\sqrt{5}}.$
The finished height of such cut crystal would be 16.817 mm±0.2 mm.

(22) While the above example is representative of a crystal cut in accordance with the above equations presuming a root value of 26.9610 mm, it should be appreciated that alternative crystals of the inventive subject matter could be cut in accordance with the above equations, but using a different root number (e.g., 20 mm (smaller root value), 34 mm (larger root value)). Any suitable root value could be used in combination with the above equations to obtain an appropriate height, cut and chamfer to provide the “ring” or resonance desired.

(23) In some embodiments of the inventive subject matter, a crystal cut in accordance with the equations described herein, and having a root value of 26.9610 mm will have the following finished tolerances: Tolerance of diameter and thickness: ±0.050 mm (W±0.1 mm)×(H±0.1 mm)×(L+0.5/−0.1 mm) (L≧2.5 mm) (W±0.1 mm)×(H±0.1 mm)×(L+0.1/−0.1 mm) (L<2.5 mm) Flatness values are Peak-to-Valley=λ/4, where λ=633 nm. Angle Tolerance: Δθ≦0.1°Δφ≦0.1°. Clear Aperture 90% of central area. Damage Threshold [GW/cm.sup.2 ]>0.5 for 1064 nm, TEM00, 10 ns, 10 Hz (AR-coated)>0.3 for 532 nm, TEM00, 10 ns, 10 Hz (AR-coated). Wavefront Distortion<λ/8@633 nm. Interior Quality—No visible scattering paths or centers [inspected by 50 mW green laser] Measurements are NIST certified. Parallelism is typically 4 arc minutes or better on initial samples. Scratch—dig is typically 80-50 on initial samples, but may not be guaranteed.

(24) It should be apparent to those skilled in the art that many more modifications besides those already described are possible without departing from the inventive concepts herein. The inventive subject matter, therefore, is not to be restricted except in the spirit of the appended claims. Moreover, in interpreting both the specification and the claims, all terms should be interpreted in the broadest possible manner consistent with the context. In particular, the terms “comprises” and “comprising” should be interpreted as referring to elements, components, or steps in a non-exclusive manner, indicating that the referenced elements, components, or steps may be present, or utilized, or combined with other elements, components, or steps that are not expressly referenced. Where the specification claims refers to at least one of something selected from the group consisting of A, B, C . . . and N, the text should be interpreted as requiring only one element from the group, not A plus N, or B plus N, etc.