TWO-DIMENSIONAL SQUARE-LATTICE PHOTONIC CRYSTAL WITH CROSS-SHAPED CONNECTING RODS AND ROTATED SQUARE RODS

Abstract

A two-dimensional square lattice photonic crystal having cross-shaped connecting rods and rotating square rods. The two-dimensional square lattice photonic crystal comprises a high refractive index dielectric cylinder and a low refractive index background dielectric cylinder. The photonic crystal structure is formed by cells in square lattice arrangement. The cells of the square lattice photonic crystal are composed of high refractive index rotating square rods, cross-shaped planar dielectric rods and background dielectrics. The high refractive index rotating square rods are connected to the cross-shaped planar dielectric rods. The lattice constant of the square lattice photonic crystal is a, the side length d of each rotating square cylinder is O.SIa to 0.64a, the rotation angle of each rotating square cylinder rod is 2.300 to 87.70, and the width t of each cross-shaped planar dielectric rod is 0.032a to 0.072 a. The distance G of the cross-shaped planar dielectric rods that move, from bottom to top and from left to right within a lattice period relative to the rotating square rods is 0.4a to 0.6a. According to the photonic crystal structure, the integration level of a light path can be provided easily, and a large absolute forbidden band can be achieved.

Claims

1. A two-dimensional square-lattice photonic crystal with cross-shaped connecting rods and rotated square rods, wherein a high refractive index dielectric cylinder and a low refractive index background dielectric cylinder; the photonic crystal structure is formed from a unit cell arranged according to a square lattice; said unit cell of the square-lattice photonic crystal is composed of a rotated square rod with high refractive index, a planar cross-shaped dielectric rod and a background dielectric; the rotated square rod with high refractive index is connected with the planar cross-shaped dielectric rod; the lattice constant of the square-lattice photonic crystal is a; the side length d of the rotated square cylinder is 0.51a-0.64a, the rotating angle α of the rotated square cylinder rod is 2.30°-87.7°, and the width t of the planar cross-shaped dielectric rod is 0.032a-0.072a; and the distance G of the planar cross-shaped dielectric rod moving from bottom to top and from left to right in one lattice period relative to the rotated square rods is 0.4a-0.6a.

2. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 1, wherein the dielectric with high refractive index is a dielectric with refractive index greater than 2.

3. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 1, wherein the dielectric with high refractive index is silicon, gallium arsenide, or titanium dioxide.

4. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 3, wherein the dielectric with high refractive index is silicon, and the refractive index is 3.4.

5. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 1, wherein the background dielectric is a dielectric with a dielectric with low refractive index smaller than 1.6.

6. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 1, wherein the background dielectric with low refractive index is air, vacuum, magnesium fluoride, or silicon dioxide.

7. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 6, wherein the dielectric with low refractive index is air.

8. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 1, wherein the horizontal distance from the leftmost end to the rightmost end of the planar cross-shaped dielectric rod of the photonic crystal unit cell is a; and the vertical distance from the uppermost end to the lowermost end of the planar cross-shaped dielectric rod of the photonic crystal unit cell is a.

9. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 1, wherein the dielectric with high refractive index is silicon; the dielectric with low refractive index is air; 2.30°+90°×n≦87.7°+90°×n, where n is 0 or other natural number; 0.51a≦d≦0.64a, 0.032a≦t≦0.072a, and 0.4a≦G≦0.6a, and the relative value of the absolute photonic bandgap of the photonic crystal structure is greater than 10%.

10. The two-dimensional square-lattice photonic crystal with the cross-shaped connecting rods and the rotated square rods according to claim 1, wherein the dielectric with high refractive index is silicon; the dielectric with low refractive index is air; d=0.57a, t=0.048a, G=0.5a, α=21.94°+90°×n, where n is 0 or other natural number; and a relative value of the absolute photonic bandgap band is 14.30%.

Description

DESCRIPTION OF THE DRAWINGS

[0026] FIG. 1 is the structural schematic diagram of the unit cell of the two-dimensional square-lattice photonic crystal with cross-shaped connecting rods and rotated square rods according to the present invention.

[0027] FIG. 2 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 1.

[0028] FIGS. 3 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 2.

[0029] FIG. 4 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 3.

[0030] FIG. 5 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 4.

[0031] FIG. 6 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 5.

[0032] FIG. 7 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 6.

[0033] FIG. 8 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 7.

[0034] FIG. 9 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 8.

[0035] FIG. 10 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 10.

[0036] FIG. 11 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 11.

[0037] FIG. 12 is the structural diagram of the photonic bands corresponding to the unit cell parameters adopted in embodiment 12.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

[0038] The present invention is further described in, detail below in combination with the drawings and specific embodiments:

[0039] The two-dimensional square-lattice PhC with cross-shaped connecting rods and rotated square rods according to the present invention includes a dielectric cylinder with high refractive index and a background dielectric cylinder with low refractive index. FIG. 1 shows the unit cell of the PhC, and the PhC structure is formed from the unit cell arranged according to a square lattice. The unit cell of the square-lattice PhC is composed of a rotated square rod with high refractive index, a planar cross-shaped dielectric rod and a background dielectric; and the rotated square rod with high refractive index is connected with the planar cross-shaped dielectric rod. The unit cell structure has four characteristic parameters as, follows: the side length d of the rotated square cylinder which is 0.51a-a64a the rotating angle α of the rotated square, cylinder which is 2.30°+90°×n≦α≦87.7°+90°×n, wherein n=0, 1, 2, . . . (nεN) and n is a natural number; the width t of the planar cross-shaped dielectric rod which is 0.032a-0.072a, wherein a is the lattice constant; and the distance G of the planar cross-shaped dielectric rod moving from bottom to top and from left to right in one lattice period relative to the rotated square cylinder which is 0.4a-0.6a: the horizontal distance from the leftmost end to the rightmost end of the planar cross-shaped dielectric rod of the PhC unit cell which is a; and the vertical distance from the uppermost end to the lowermost end of the planar cross-shaped dielectric rod of the PhC unit cell which is a.

Embodiment 1

[0040] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index: d=0.57a; t=0.048a: G=0.5a; and α=2.30°. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 2 that a relative value of the wide absolute photonic bandgap is 10%.

Embodiment 2

[0041] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; d=0.57a: t=0.048a; G=0.5a: and α=87.7°. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 3 that a relative value of the wide absolute photonic bandgap is 10%.

Embodiment 3

[0042] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; d=0.51a; t=0.048a; G=0.5a; and α=21.94°. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 4 that a relative value of the wide absolute photonic bandgap is 10.46%.

Embodiment 4

[0043] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index: d=0.64a; t=0.048a: G=0.5a; and α=21.94°. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 5 that a relative value of the wide absolute photonic bandgap is 11.53%.

Embodiment 5

[0044] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; d=0.57a; t=0.032a; G=0.5a; and α=21.94°. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 6 that a relative value of the wide absolute photonic bandgap is 10.10%.

Embodiment 6

[0045] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; d=0.57a; t=0.072a; G=0.5a; and α=21.94°. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 7 that a relative value of the wide absolute photonic bandgap is 10.08%.

Embodiment 7

[0046] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; α=21.94° ; d=0.57a: t=0.048a; and G=0.4a. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 8 that a relative value of the wide absolute photonic bandgap is 12.62%.

Embodiment 8

[0047] Silicon is used as the dielectric with high refractive index; air is used, as the dielectric with low refractive index; α=21.94°; d=0.57a; t=0.048a; and G=0.6a. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 9 that a relative value of the wide absolute photonic bandgap is 12.54%.

Embodiment 9

[0048] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; a=1.55*0.431 μm≈0.668 μm; the corresponding structural parameters are: d=0.2457 μm; t=0.0207 μm; G=0.2155 μm; and α=21.94°. The structure has a relative value of the absolute photonic bandgap of 14.03% at the communication wave band of 1.55 μm.

Embodiment 10

[0049] Silicon is used as the dielectric with high refractive index; air is used as the dielectric, with low refractive index; n=0, d=0.57a; t=0.048a; G=0.5a; and α=21.94°. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 10 that a relative value of the wide absolute photonic bandgap is 14.30%.

Embodiment 11

[0050] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; α=21.94°; t=0.048a; G=0.5a; and d=0.51a. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 11 that a relative value of the wide absolute photonic bandgap is 10.46%.

Embodiment 12

[0051] Silicon is used as the dielectric with high refractive index; air is used as the dielectric with low refractive index; α=21.91°; d=0.57a; G=0.5a; and t=0.068a. It can be seen from a numerical simulation result of the present embodiment as shown in FIG. 12 that a relative value of the wide absolute photonic bandgap is 10.50%.

[0052] The above detailed description is only for clearly understanding the present invention and should not be taken as a limit to the present invention. Therefore, any modification made to the present invention is obvious to those skilled in the art.