POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS

Abstract

A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.

Claims

1. A positive resist composition adapted to form a positive pattern via organic solvent development, comprising a base resin containing a polymer comprising recurring units having the formula (1) and recurring units having the formula (2), but not recurring units adapted to increase a polarity by deprotection reaction with the aid of acid, ##STR00126## wherein R.sup.1 and R.sup.7 are each independently hydrogen or methyl, R.sup.2 is a single bond, phenylene, —O—R.sup.5— or —C(═O)—X—R.sup.5—, X is —O— or —NH—, R.sup.5 is a C.sub.1-C.sub.6 straight, branched or cyclic alkylene group, C.sub.2-C.sub.6 straight, branched or cyclic alkenylene group, phenylene group, or a combination thereof, which may contain a carbonyl, ester, ether or hydroxyl moiety, R.sup.3 and R.sup.4 are each independently a C.sub.1-C.sub.12 straight, branched or cyclic alkyl group, C.sub.6-C.sub.12 aryl group, C.sub.7-C.sub.20 aralkyl group or mercaptophenyl group, which may contain a carbonyl, ester or ether moiety, Y is a single bond, phenylene group or —C(═O)—O—, R.sup.8 is a single bond, a C.sub.1-C.sub.10 straight, branched or cyclic alkylene group which may contain an ether moiety, ester moiety, —N═ or —S—, or phenylene or naphthylene group, R.sup.9 and R.sup.10 are each independently hydrogen, C.sub.1-C.sub.10 straight or branched alkyl group, C.sub.2-C.sub.10 alkenyl group or C.sub.6-C.sub.10 aryl group, R.sup.9 and R.sup.10 may bond together to form a ring with the nitrogen atom to which they are attached, the ring may contain an ether moiety, sulfide moiety, disulfone moiety, nitrogen atom, double bond or aromatic moiety, either one of R.sup.9 and R.sup.10 may bond with R.sup.8 to form a ring, M.sup.− is a non-nucleophilic counter ion containing at least one fluorine atom, a and b are numbers meeting 0.1≦a≦0.9, 0.1≦b≦0.9, and 0.1≦a/b≦1.5.

2. The positive resist composition of claim 1 wherein the polymer further comprises recurring units containing a phenolic hydroxyl group.

3. The positive resist composition of claim 1 wherein the recurring units containing a phenolic hydroxyl group have the formula (3): ##STR00127## wherein Ar is a C.sub.6-C.sub.14 aromatic group which may contain a nitrogen atom, R.sup.11 is hydrogen or methyl, R.sup.12 is a single bond or a C.sub.1-C.sub.10 straight or branched alkylene group which may contain a hydroxyl, carboxyl, ester, ether moiety or lactone ring, R.sup.13 is hydrogen, fluorine, trifluoromethyl, cyano, C.sub.1-C.sub.10 straight, branched or cyclic alkyl group, C.sub.1-C.sub.10 straight, branched or cyclic alkoxy group, C.sub.6-C.sub.14 aryl group, C.sub.2-C.sub.10 straight, branched or cyclic alkenyl group, C.sub.2-C.sub.10 straight, branched or cyclic alkynyl group, C.sub.2-C.sub.10 straight, branched or cyclic alkoxycarbonyl group, C.sub.2-C.sub.10 straight, branched or cyclic acyl group, or C.sub.2-C.sub.10 straight, branched or cyclic acyloxy group, p is an integer of 1 to 5, q is an integer of 0 to 4, Z is a single bond, —C(═O)—O— or —C(═O)—NH—.

4. The positive resist composition of claim 1, further comprising an organic solvent.

5. The positive resist composition of claim 1, further comprising a surfactant.

6. A pattern forming process comprising the steps of applying the positive resist composition of claim 1 onto a substrate, baking the composition to form a resist film, exposing the resist film to high-energy radiation, and developing the resist film in an organic solvent developer.

7. The pattern forming process of claim 6 wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm.

8. The pattern forming process of claim 6 wherein the developer contains at least one organic solvent selected from the group consisting of 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, pentyl acetate, butenyl acetate, isopentyl acetate, propyl formate, butyl formate, isobutyl formate, pentyl formate, isopentyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, pentyl lactate, isopentyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate.

Description

DESCRIPTION OF EMBODIMENTS

[0025] The singular forms “a,” “an” and “the” include plural referents unless the context clearly dictates otherwise. The notation (Cn-Cm) means a group containing from n to m carbon atoms per group.

[0026] The abbreviations have the following meaning.

[0027] EB: electron beam

[0028] EUV: extreme ultraviolet

[0029] PAG: photoacid generator

[0030] PEB: post-exposure bake

[0031] LWR: line width roughness

[0032] Mw: weight average molecular weight

[0033] Mw/Mn: molecular weight distribution or dispersity

[0034] GPC: gel permeation chromatography

Resist Composition

[0035] A first embodiment of the invention is a resist composition comprising a base resin which includes a polymer comprising recurring units having the formula (1) and recurring units having the formula (2), but not recurring units adapted to increase a polarity by deprotection reaction with the aid of acid. It is noted that recurring units having formulae (1) and (2) are also referred to as recurring units (a) and (b), respectively.

##STR00003##

[0036] Herein R.sup.1 and R.sup.7 are each independently hydrogen or methyl. R.sup.2 is a single bond, phenylene, —O—R.sup.5— or —C(═O)—X—R.sup.5—, wherein X is —O— or —NH—, and R.sup.5 is a C.sub.1-C.sub.6 straight, branched or cyclic alkylene group, C.sub.2-C.sub.6 straight, branched or cyclic alkenylene group, phenylene group, or a combination thereof, which may contain a carbonyl, ester, ether or hydroxyl moiety. R.sup.3 and R.sup.4 are each independently a C.sub.1-C.sub.12 straight, branched or cyclic alkyl group, C.sub.6-C.sub.12 aryl group, C.sub.7-C.sub.20 aralkyl group or mercaptophenyl group, which may contain a carbonyl, ester or ether moiety. Y is a single bond, phenylene group or —C(═O)—O—. R.sup.8 is a single bond, a C.sub.1-C.sub.10 straight, branched or cyclic alkylene group which may contain an ether moiety, ester moiety, —N═ or —S—, or phenylene or naphthylene group. R.sup.9 and R.sup.10 are each independently hydrogen, C.sub.1-C.sub.10 straight or branched alkyl group, C.sub.2-C.sub.10 alkenyl group or C.sub.6-C.sub.10 aryl group, R.sup.9 and R.sup.10 may bond together to form a ring with the nitrogen atom to which they are attached, the ring may contain an ether moiety, sulfide moiety, disulfone moiety, nitrogen atom, double bond or aromatic moiety, either one of R.sup.9 and R.sup.10 may bond with R.sup.8 to form a ring. M.sup.− is a non-nucleophilic counter ion containing at least one fluorine atom, a and b are numbers meeting the range: 0.1≦a≦0.9, 0.1≦b≦0.9, and 0.1≦a/b≦1.5.

[0037] Examples of the monomer from which recurring unit (a) is derived are given below, but not limited thereto. Herein R.sup.1 and M.sup.− are as defined above.

##STR00004## ##STR00005## ##STR00006## ##STR00007## ##STR00008## ##STR00009## ##STR00010## ##STR00011## ##STR00012## ##STR00013## ##STR00014## ##STR00015## ##STR00016## ##STR00017## ##STR00018## ##STR00019## ##STR00020## ##STR00021## ##STR00022## ##STR00023## ##STR00024## ##STR00025## ##STR00026## ##STR00027## ##STR00028## ##STR00029## ##STR00030## ##STR00031## ##STR00032## ##STR00033## ##STR00034## ##STR00035## ##STR00036## ##STR00037## ##STR00038## ##STR00039## ##STR00040## ##STR00041## ##STR00042## ##STR00043## ##STR00044## ##STR00045## ##STR00046##

[0038] Examples of the monomer from which recurring unit (b) is derived are given below, but not limited thereto. Herein R.sup.7 is as defined above.

##STR00047## ##STR00048## ##STR00049## ##STR00050## ##STR00051## ##STR00052##

[0039] In formula (1), M.sup.− is a non-nucleophilic counter ion containing at least one fluorine atom. Examples include fluoroalkylsulfonate ions such as triflate, 1,1,1-trifluoroethanesulfonate, and nonafluorobutanesulfonate; 2-fluorobenzenesulfonate, 3-fluorobenzenesulfonate, 4-fluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 1,2,3,4,5-pentafluorobenzenesulfonate, bis(trifluoromethylsulfonyl)imide, bis(perfluoroethylsulfonyl)imide, bis(perfluorobutylsulfonyl)imide, tris(trifluoromethylsulfonyl)methide, tris(perfluoroethylsulfonyl)methide, hexafluorophosphate, tetrafluoroborate, trifluoro(trifluoromethyl)borate, tetrakis(4-fluorophenyl)borate, tetrakis(pentafluorophenyl)borate, hexafluoroarsenate, and hexafluoroantimonate.

[0040] Also included in M.sup.− are sulfonates having fluorine substituted at α-position as represented by the formula (K-1) and sulfonates having fluorine substituted at α- and β-positions as represented by the formula (K-2).

##STR00053##

[0041] In formula (K-1), R.sup.101 is hydrogen, or a C.sub.1-C.sub.30 straight, branched or cyclic alkyl group, C.sub.2-C.sub.30 straight, branched or cyclic acyl group, C.sub.2-C.sub.20 alkenyl group, C.sub.6-C.sub.20 aryl group, or C.sub.6-C.sub.20 aryloxy group, which may contain an ether, ester, carbonyl moiety, lactone ring, lactam ring, sultone ring, amino, sulfone, sulfonic acid ester, carbonate, hydroxyl, thiol, carboxyl, carbamate, amide or imide moiety.

[0042] In formula (K-2), R.sup.102 is hydrogen, or a C.sub.1-C.sub.30 straight, branched or cyclic alkyl group, C.sub.2-C.sub.30 straight, branched or cyclic acyl group, C.sub.2-C.sub.20 alkenyl group, C.sub.6-C.sub.20 aryl group or C.sub.6-C.sub.20 aryloxy group, which may contain an ether, ester, carbonyl moiety, lactone ring, lactam ring, sultone ring, amino, sulfone, sulfonic acid ester, carbonate, hydroxyl, thiol, carboxyl, carbamate, amide or imide moiety. R.sup.103 is hydrogen, methyl, ethyl or trifluoromethyl.

[0043] The polymer does not contain recurring units adapted to increase a polarity by deprotection reaction with the aid of acid. The recurring units adapted to increase a polarity by deprotection reaction with the aid of acid are typically recurring units containing a so-called acid labile group. Examples of the recurring units containing an acid labile group include recurring units containing a carboxyl group substituted with an acid labile group and recurring units containing a phenolic hydroxyl group substituted with an acid labile group. Since the polymer does not contain these recurring units, the inventive resist composition is a non-chemically-amplified resist composition.

[0044] The polymer may further comprise recurring units (a) containing a phenolic hydroxyl group, preferably recurring units (c) having the formula (3).

##STR00054##

[0045] Herein Ar is a C.sub.6-C.sub.14 aromatic group which may contain a nitrogen atom. R.sup.11 is hydrogen or methyl. R.sup.12 is a single bond or a C.sub.1-C.sub.10 straight or branched alkylene group which may contain a hydroxyl, carboxyl, ester, ether moiety or lactone ring. R.sup.13 is hydrogen, fluorine, a trifluoromethyl group, cyano group, C.sub.1-C.sub.10 straight, branched or cyclic alkyl group, C.sub.1-C.sub.10 straight, branched or cyclic alkoxy group, C.sub.6-C.sub.14 aryl group, C.sub.2-C.sub.10 straight, branched or cyclic alkenyl group, C.sub.2-C.sub.10 straight, branched or cyclic alkynyl group, C.sub.2-C.sub.10 straight, branched or cyclic alkoxycarbonyl group, C.sub.2-C.sub.10 straight, branched or cyclic acyl group, or C.sub.2-C.sub.10 straight, branched or cyclic acyloxy group. Z is a single bond, —C(═O)—O— or —C(═O)—NH—, p is an integer of 1 to 5, and q is an integer of 0 to 4.

[0046] Examples of the monomer from which recurring unit (c) is derived are given below, but not limited thereto. Herein R.sup.11 is as defined above.

##STR00055## ##STR00056## ##STR00057## ##STR00058## ##STR00059## ##STR00060## ##STR00061## ##STR00062## ##STR00063## ##STR00064## ##STR00065## ##STR00066## ##STR00067## ##STR00068## ##STR00069## ##STR00070## ##STR00071## ##STR00072## ##STR00073## ##STR00074## ##STR00075## ##STR00076## ##STR00077## ##STR00078## ##STR00079## ##STR00080## ##STR00081## ##STR00082## ##STR00083##

[0047] Inclusion of recurring units (c) having a phenolic hydroxyl group is effective for enhancing a sensitizing effect to an acid generator and improving the resist sensitivity.

[0048] In a more preferred embodiment, the polymer may further comprise recurring units (d) containing an adhesive group. The adhesive group is selected from among ether, ester, carbonyl, lactone ring, lactam ring, sultone ring, amino, sulfone, sulfonic acid ester, carbonate, hydroxyl (exclusive of phenolic hydroxyl), thiol, carboxyl, carbamate, amide and imide groups.

[0049] Examples of the monomer from which the recurring units (d) containing an adhesive group are derived are shown below, but not limited thereto. Notably R.sup.14 is hydrogen or methyl.

##STR00084## ##STR00085## ##STR00086## ##STR00087## ##STR00088## ##STR00089## ##STR00090## ##STR00091## ##STR00092## ##STR00093## ##STR00094## ##STR00095## ##STR00096## ##STR00097## ##STR00098## ##STR00099## ##STR00100## ##STR00101## ##STR00102## ##STR00103## ##STR00104##

[0050] In a preferred embodiment, the polymer may further comprise recurring units (e) derived from indene, acenaphthylene, chromone, coumarin or norbornadiene compounds, as represented by the following formula.

##STR00105##

Herein R.sup.111 to R.sup.115 are each independently hydrogen, a C.sub.1-C.sub.30 straight, branched or cyclic alkyl group, a C.sub.1-C.sub.30 straight, branched or cyclic haloalkyl group, hydroxy group, C.sub.1-C.sub.30 straight, branched or cyclic alkoxy group, C.sub.1-C.sub.30 straight, branched or cyclic acyl group, C.sub.2-C.sub.30 straight, branched or cyclic alkoxycarbonyl group, C.sub.6-C.sub.10 aryl group, halogen, or 1,1,1,3,3,3-hexafluoro-2-propanol group, X.sup.0 is methylene, oxygen or sulfur, e1 to e5 are numbers in the range: 0≦e1≦0.5, 0≦e2≦0.5, 0≦e3≦0.5, 0≦e4≦0.5, 0≦e5≦0.5, and 0≦e1+e2+e3+e4+e5≦0.5.

[0051] In a preferred embodiment, the polymer may further comprise recurring units (f) derived from styrene, vinylnaphthalene, vinylanthracene, vinylpyrene or methyleneindane compounds.

[0052] The polymer defined herein may be synthesized by any desired methods, for example, by dissolving suitable monomers selected from the monomers corresponding to recurring units (a) to (f) in an organic solvent, adding a radical polymerization initiator thereto, and effecting heat polymerization. Examples of the organic solvent which can be used for polymerization include toluene, benzene, tetrahydrofuran, diethyl ether, dioxane, cyclohexane, cyclopentane, methyl ethyl ketone, and γ-butyrolactone. Examples of the polymerization initiator used herein include 2,2′-azobisisobutyronitrile (AIBN), 2,2′-azobis(2,4-dimethylvaleronitrile), dimethyl 2,2-azobis(2-methylpropionate), benzoyl peroxide, and lauroyl peroxide. Preferably the system is heated at 50 to 80° C. for polymerization to take place. The reaction time is 2 to 100 hours, preferably 5 to 20 hours.

[0053] When hydroxystyrene or hydroxyvinylnaphthalene is copolymerized, an alternative method is possible. Specifically, acetoxystyrene or acetoxyvinylnaphthalene is used instead of hydroxystyrene or hydroxyvinylnaphthalene, and after polymerization, the acetoxy group is deprotected by alkaline hydrolysis, for conversion to hydroxystyrene or hydroxyvinylnaphthalene units. For alkaline hydrolysis, a base such as aqueous ammonia or triethylamine may be used. The reaction temperature is −20° C. to 100° C., preferably 0° C. to 60° C., and the reaction time is 0.2 to 100 hours, preferably 0.5 to 20 hours.

[0054] In the polymer, recurring units (a) to (f) may be incorporated in the following molar fraction: 0.1≦a≦0.9, 0.1≦b≦0.9, 0≦c≦0.8, 0≦d≦0.8, 0≦e≦0.5, 0≦f≦0.5, and 0.1≦a/b≦1.5; preferably 0.12≦a≦0.7, 0.15≦b≦0.8, 0≦c≦0.7, 0≦d≦0.7, 0≦e≦0.4, 0≦f≦0.4, and 0.2≦a/b≦1.4; and more preferably 0.15≦a≦0.6, 0.18≦b≦0.7, 0≦c≦0.6, 0≦d≦0.6, 0≦e≦0.3, 0≦f≦0.3, and 0.3≦a/b≦1.3. Notably, they preferably meet a+b+c+d+e+f=1.

[0055] The polymer described in Patent Document 4 has a higher proportion of amino-containing recurring units than the proportion of anion-bound PAG units. If the proportion of amino-containing recurring units is higher, the acid generated upon light exposure is overall quenched with the amine, and thus acid-catalyzed reaction no longer takes place. By contrast, the resist composition of the invention is not a chemically amplified resist composition utilizing acid-catalyzed reaction. This means that no limits are imposed on the proportion of acid generator-containing recurring units and the proportion of amino-containing recurring units, that is, these proportions may be equal or either one may be more than the other.

[0056] The polymer should preferably have a weight average molecular weight (Mw) in the range of 1,000 to 500,000, and more preferably 2,000 to 30,000, as measured versus polystyrene standards by GPC using tetrahydrofuran solvent. With Mw<1,000, the resist composition may be less heat resistant. A polymer with Mw>500,000 may be less organic solvent-soluble and likely to invite a footing phenomenon after pattern formation.

[0057] If a polymer has a wide molecular weight distribution or dispersity (Mw/Mn), which indicates the presence of lower and higher molecular weight polymer fractions, there is a possibility that foreign matter is left on the pattern or the pattern profile is degraded. The influences of molecular weight and dispersity become stronger as the pattern rule becomes finer. Therefore, the polymer should preferably have a narrow dispersity (Mw/Mn) of 1.0 to 2.0, especially 1.0 to 1.5, in order to provide a resist composition suitable for micropatterning to a small feature size.

[0058] The base resin in the resist composition of the invention includes a polymer comprising recurring units (a) having a sulfonium cation bonded to the backbone and recurring units (b) having an amino group bonded to the backbone. The recurring unit (a) having a sulfonium cation bonded to the backbone serves to reduce the solubility of the polymer in the developer, but the solubility in developer is improved after the sulfonium salt is photo-decomposed. Additionally, the fluorosulfonic acid generated by photo-decomposition of the sulfonium salt forms an ammonium salt with the amino-containing recurring unit whereby the solubility in developer is further improved. In this way, a positive resist pattern is formed at a high contrast.

[0059] If the base resin does not include a polymer comprising both recurring units (a) having a sulfonium cation bonded to the backbone and recurring units (b) having an amino group bonded to the backbone, for example, if the base resin is a blend of a polymer comprising recurring units (a) and a polymer comprising recurring units (b), then it fails to achieve a dissolution contrast satisfactory as positive resist.

[0060] If the base resin includes recurring units having an acid labile group, then the dissolution rate of resist film in the unexposed region is increased. Additionally, since all or almost all of the acid generated upon light exposure is converted into an ammonium salt, acid-catalyzed deprotection reaction does not take place. Therefore, the base resin including recurring units having an acid labile group becomes a positive resist composition having a low dissolution contrast.

[0061] The polymer defined herein is adequate as a base resin in a positive resist composition adapted to form a positive pattern via organic solvent development. The polymer is used as the base resin and combined with an organic solvent, dissolution regulator, surfactant and other components, in a suitable combination for a particular purpose, to formulate a positive resist composition. The composition is of positive tone in the sense that the polymer in the exposed region is converted to an ammonium salt having the structure of ionic liquid, whereby the dissolution rate in developer is accelerated. The resulting resist pattern has improved edge roughness. By virtue of these advantages, the resist composition is fully useful in commercial application and suited as a pattern-forming resist material for the fabrication of VLSIs.

[0062] As mentioned above, the resist composition may comprise an organic solvent, basic compound, surfactant, and/or acetylene alcohol in addition to the base resin.

[0063] The organic solvent used herein is not particularly limited as long as the base resin and other components are dissolvable therein. Exemplary organic solvents include ketones such as cyclohexanone and methyl-2-n-pentyl ketone; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, and 1-ethoxy-2-propanol; ethers such as propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether; esters such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, ethyl lactate, ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, t-butyl acetate, t-butyl propionate, and propylene glycol mono-t-butyl ether acetate; and lactones such as γ-butyrolactone, and mixtures thereof. An appropriate amount of the organic solvent used is 200 to 3,000 parts, more preferably 400 to 2,500 parts by weight per 100 parts by weight of the base resin.

[0064] Suitable basic compounds are described in JP-A 2008-111103, paragraphs [0146]-[0164], suitable surfactants in paragraphs [0165]-[0166], and suitable acetylene alcohols in paragraphs [0179]-[0182] (U.S. Pat. No. 7,537,880).

Process

[0065] The positive resist composition is used in the fabrication of various integrated circuits. Pattern formation using the resist composition may be performed by well-known lithography processes. The process generally involves coating, exposure, and development.

[0066] For example, the positive resist composition is first applied onto a substrate on which an integrated circuit is to be formed (e.g., Si, SiO.sub.2, SiN, SiON, TiN, WSi, BPSG, SOG, or organic antireflective coating) or a substrate on which a mask circuit is to be formed (e.g., Cr, CrO, CrON, or MoSi) by a suitable coating technique such as spin coating, roll coating, flow coating, dip coating, spray coating or doctor coating. The coating is prebaked on a hot plate at a temperature of 60 to 150° C. for 10 seconds to 30 minutes, preferably 80 to 120° C. for 30 seconds to 20 minutes. The resulting resist film is generally 0.01 to 2.0 μm thick.

[0067] If desired, a protective film may be formed on the resist film. The protective film is preferably formed of a developer-soluble composition so that both formation of a resist pattern and stripping of the protective film may be achieved during development. The protective film has the functions of restraining outgassing from the resist film, filtering or cutting off out-of-band (OOB) light having a wavelength of 140 to 300 nm emitted by the EUV laser (other than 13.5 nm), and preventing the resist film from assuming T-top profile or from losing its thickness under environmental impacts.

[0068] The resist film is then exposed to a desired pattern of high-energy radiation such as UV, deep-UV, EB, EUV of wavelength 3 to 15 nm, x-ray, soft x-ray, excimer laser light, γ-ray or synchrotron radiation directly or through a mask. The exposure dose is preferably about 1 to 1,000 mJ/cm.sup.2, more preferably about 10 to 500 mJ/cm.sup.2, or about 0.1 to 1,000 μC/cm.sup.2, more preferably about 0.5 to 500 μC/cm.sup.2. The resist film is optionally baked (PEB) on a hot plate, preferably at 50 to 150° C. for 10 seconds to 30 minutes, more preferably at 60 to 120° C. for 30 seconds to 20 minutes.

[0069] Thereafter the resist film is developed in a developer for 3 seconds to 3 minutes, preferably 5 seconds to 2 minutes by conventional techniques such as dip, puddle or spray techniques. The resist film in the exposed area is dissolved in the developer whereas the resist film in the unexposed area is not dissolved. In this way, the desired positive pattern is formed on the substrate. It is appreciated that the resist composition of the invention is best suited for micro-patterning using such high-energy radiation as EB, EUV, x-ray, soft x-ray, γ-ray and synchrotron radiation among others.

[0070] For the development, an organic solvent is used. The developer used herein contains at least one organic solvent selected from among 2-octanone, 2-nonanone, 2-heptanone, 3-heptanone, 4-heptanone, 2-hexanone, 3-hexanone, diisobutyl ketone, methylcyclohexanone, acetophenone, methylacetophenone, propyl acetate, butyl acetate, isobutyl acetate, pentyl acetate, butenyl acetate, isopentyl acetate, propyl formate, butyl formate, isobutyl formate, pentyl formate, isopentyl formate, methyl valerate, methyl pentenoate, methyl crotonate, ethyl crotonate, methyl propionate, ethyl propionate, ethyl 3-ethoxypropionate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, isobutyl lactate, pentyl lactate, isopentyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, methyl benzoate, ethyl benzoate, phenyl acetate, benzyl acetate, methyl phenylacetate, benzyl formate, phenylethyl formate, methyl 3-phenylpropionate, benzyl propionate, ethyl phenylacetate, and 2-phenylethyl acetate, which may be used alone or in admixture.

[0071] At the end of development, the resist film may be dried or rinsed. For example, the developer may be removed by spin drying. In the case of rinsing, a solvent which is miscible with the developer and does not dissolve the resist film is preferred as the rinsing liquid. Suitable solvents include alcohols of 3 to 10 carbon atoms, ether compounds of 8 to 12 carbon atoms, alkanes, alkenes, and alkynes of 6 to 12 carbon atoms, and aromatic solvents.

[0072] Specifically, suitable alcohols of 3 to 10 carbon atoms include n-propyl alcohol, isopropyl alcohol, 1-butyl alcohol, 2-butyl alcohol, isobutyl alcohol, t-butyl alcohol, 1-pentanol, 2-pentanol, 3-pentanol, t-pentyl alcohol, neopentyl alcohol, 2-methyl-1-butanol, 3-methyl-1-butanol, 3-methyl-3-pentanol, cyclopentanol, 1-hexanol, 2-hexanol, 3-hexanol, 2,3-dimethyl-2-butanol, 3,3-dimethyl-1-butanol, 3,3-dimethyl-2-butanol, 2-ethyl-1-butanol, 2-methyl-1-pentanol, 2-methyl-2-pentanol, 2-methyl-3-pentanol, 3-methyl-1-pentanol, 3-methyl-2-pentanol, 3-methyl-3-pentanol, 4-methyl-1-pentanol, 4-methyl-2-pentanol, 4-methyl-3-pentanol, cyclohexanol, and 1-octanol. Suitable ether compounds of 8 to 12 carbon atoms include di-n-butyl ether, diisobutyl ether, di-s-butyl ether, di-n-pentyl ether, diisopentyl ether, di-s-pentyl ether, di-t-pentyl ether, and di-n-hexyl ether. Suitable alkanes of 6 to 12 carbon atoms include hexane, heptane, octane, nonane, decane, undecane, dodecane, methylcyclopentane, dimethylcyclopentane, cyclohexane, methylcyclohexane, dimethylcyclohexane, cycloheptane, cyclooctane, and cyclononane. Suitable alkenes of 6 to 12 carbon atoms include hexene, heptene, octene, cyclohexene, methylcyclohexene, dimethylcyclohexene, cycloheptene, and cyclooctene. Suitable alkynes of 6 to 12 carbon atoms include hexyne, heptyne, and octyne. Suitable aromatic solvents include toluene, xylene, ethylbenzene, isopropylbenzene, t-butylbenzene, and mesitylene. The solvents may be used alone or in admixture.

[0073] The positive resist composition is used not only in the lithography for forming semiconductor circuits, but also in the formation of mask circuit patterns, micromachines, and thin-film magnetic head circuits.

EXAMPLE

[0074] Examples and Comparative Examples are given below for further illustrating the invention, but they should not be construed as limiting the invention thereto. All parts (pbw) are by weight. Mw is a weight average molecular weight as measured versus polystyrene standards by GPC using tetrahydrofuran (THF) solvent.

[0075] The following polymer Synthesis Examples use PAG Monomers 1 to 10 and Comparative PAG Monomer 1 which are identified below.

##STR00106## ##STR00107## ##STR00108## ##STR00109##

1. Synthesis of Polymers

Synthesis Example 1

[0076] A 2-L flask was charged with 19.4 g of PAG Monomer 1, 4.7 g of 2-(dimethylamino)ethyl methacrylate, 7.1 g of 4-hydroxyphenyl methacrylate, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of 2,2′-azobisisobutyronitrile (AIBN) as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 1. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0077] Copolymer Composition Ratio (Molar Ratio) [0078] PAG Monomer 1:2-(dimethylamino)ethyl methacrylate:4-hydroxyphenyl methacrylate=0.3:0.3:0.4 [0079] Mw=10,900 [0080] Mw/Mn=1.71

##STR00110##

Synthesis Example 2

[0081] A 2-L flask was charged with 39.1 g of PAG Monomer 2, 9.5 g of 2-(diethylamino)ethyl methacrylate, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 2. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0082] Copolymer Composition Ratio (Molar Ratio) [0083] PAG Monomer 2:2-(diethylamino)ethyl methacrylate=0.46:0.54 [0084] Mw=7,600 [0085] Mw/Mn=1.89

##STR00111##

Synthesis Example 3

[0086] A 2-L flask was charged with 23.5 g of PAG Monomer 3, 5.5 g of 2-(dimethylamino)ethyl methacrylate, 5.3 g of 4-hydroxyphenyl methacrylamide, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 3. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0087] Copolymer Composition Ratio (Molar Ratio) [0088] PAG Monomer 3:2-(dimethylamino)ethyl methacrylate:4-hydroxyphenyl methacrylamide=0.35:0.35:0.3 [0089] Mw=7,100 [0090] Mw/Mn=1.69

##STR00112##

Synthesis Example 4

[0091] A 2-L flask was charged with 13.4 g of PAG Monomer 4, 5.5 g of vinylimidazole, 4.1 g of 3,5-dimethyl-4-hydroxyphenyl methacrylate, 3.4 g of 2-oxooxolan-3-yl methacrylate, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 4. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0092] Copolymer Composition Ratio (Molar Ratio) [0093] PAG Monomer 4:vinylimidazole: 3,5-dimethyl-4-hydroxyphenyl methacrylate: 2-oxooxolan-3-yl methacrylate=0.3:0.3:0.2:0.2 [0094] Mw=7,600 [0095] Mw/Mn=1.63

##STR00113##

Synthesis Example 5

[0096] A 2-L flask was charged with 14.2 g of PAG Monomer 5, 5.9 g of 2-piperidineethyl-1-yl methacrylate, 4.7 g of 3-tert-butyl-4-hydroxyphenyl methacrylate, 4.7 g of tetrahydro-2-oxofuran-3-yl methacrylate, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 5. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0097] Copolymer Composition Ratio (Molar Ratio) [0098] PAG Monomer 5:2-piperidineethyl-1-yl methacrylate: 3-tert-butyl-4-hydroxyphenyl methacrylate:tetrahydro-2-oxofuran-3-yl methacrylate=0.3:0.3:0.2:0.2 [0099] Mw=8,400 [0100] Mw/Mn=1.64

##STR00114##

Synthesis Example 6

[0101] A 2-L flask was charged with 30.0 g of PAG Monomer 6, 6.3 g of 1,2,6-trimethyl-4-piperidyl methacrylate, 5.0 g of 3-tert-pentyl-4-hydroxyphenyl methacrylate, 4.5 g of 3-oxo-2,7-dioxatricyclo[4.2.1.0.sup.4,8]nonan-9-yl methacrylate, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 6. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0102] Copolymer Composition Ratio (Molar Ratio) [0103] PAG Monomer 6:1,2,6-trimethyl-4-piperidyl methacrylate: 3-tert-pentyl-4-hydroxyphenyl methacrylate: 3-oxo-2,7-dioxatricyclo[4.2.1.0.sup.4′.sup.8]nonan-9-yl methacrylate=0.3:0.3:0.2:0.2 [0104] Mw=8,900 [0105] Mw/Mn=1.61

##STR00115##

Synthesis Example 7

[0106] A 2-L flask was charged with 17.6 g of PAG Monomer 7, 6.8 g of 2,2,6,6-tetramethyl-4-piperidyl methacrylate, 4.7 g of 3-tert-butyl-4-hydroxyphenyl methacrylate, 4.0 g of β-methacryloxy-β,γ-dimethyl-γ-butyrolactone, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 7. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0107] Copolymer Composition Ratio (Molar Ratio) [0108] PAG Monomer 7:2,2,6,6-tetramethyl-4-piperidyl methacrylate: 3-tert-butyl-4-hydroxyphenyl methacrylate: β-methacryloxy-β,γ-dimethyl-γ-butyrolactone=0.3:0.3:0.2:0.2 [0109] Mw=8,400 [0110] Mw/Mn=1.64

##STR00116##

Synthesis Example 8

[0111] A 2-L flask was charged with 16.0 g of PAG Monomer 8, 6.8 g of 2,2,6,6-tetramethyl-4-piperidyl methacrylate, 4.4 g of 4-acetyl-3-hydroxyphenyl methacrylate, 4.0 g of β-methacryloxy-β,γ-dimethyl-γ-butyrolactone, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 8. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0112] Copolymer Composition Ratio (Molar Ratio) [0113] PAG Monomer 8:2,2,6,6-tetramethyl-4-piperidyl methacrylate: 4-acetyl-3-hydroxyphenyl methacrylate: β-methacryloxy-β,γ-dimethyl-γ-butyrolactone=0.3:0.3:0.2:0.2 [0114] Mw=8,100 [0115] Mw/Mn=1.77

##STR00117##

Synthesis Example 9

[0116] A 2-L flask was charged with 27.6 g of PAG Monomer 9, 6.8 g of 2,2,6,6-tetramethyl-4-piperidyl methacrylate, 8.8 g of 5-acetyl-3-hydroxyphenyl methacrylate, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 9. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0117] Copolymer Composition Ratio (Molar Ratio) [0118] PAG Monomer 9:2,2,6,6-tetramethyl-4-piperidyl methacrylate: 5-acetyl-3-hydroxyphenyl methacrylate=0.3:0.3:0.4 [0119] Mw=8,900 [0120] Mw/Mn=1.82

##STR00118##

Synthesis Example 10

[0121] A 2-L flask was charged with 14.9 g of PAG Monomer 10, 6.8 g of 2,2,6,6-tetramethyl-4-piperidyl methacrylate, 3.9 g of 3-fluoro-2-hydroxyphenyl methacrylate, 3.9 g of 5-hydroxynaphthalen-1-yl methacrylate, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Polymer 10. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0122] Copolymer Composition Ratio (Molar Ratio) [0123] PAG Monomer 10:2,2,6,6-tetramethyl-4-piperidyl methacrylate: 3-fluoro-2-hydroxyphenyl methacrylate: 5-hydroxynaphthalen-1-yl methacrylate=0.3:0.3:0.2:0.2 [0124] Mw=7,900 [0125] Mw/Mn=1.65

##STR00119##

Comparative Synthesis Example 1

[0126] Comparative Polymer 1 was synthesized by the same procedure as in Synthesis Example 1 aside from omitting 2-(dimethylamino)ethyl methacrylate. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0127] Copolymer Composition Ratio (Molar Ratio) [0128] PAG Monomer 1:4-hydroxyphenyl methacrylate=0.3:0.7 [0129] Mw=9,100 [0130] Mw/Mn=1.70

##STR00120##

Comparative Synthesis Example 2

[0131] Comparative Polymer 2 was synthesized by the same procedure as in Synthesis Example 1 aside from omitting PAG Monomer 1. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0132] Copolymer Composition Ratio (Molar Ratio) [0133] 2-(dimethylamino)ethyl methacrylate:4-hydroxyphenyl methacrylate=0.3:0.7 [0134] Mw=10,100 [0135] Mw/Mn=1.3

##STR00121##

Comparative Synthesis Example 3

[0136] A 2-L flask was charged with 8.2 g of 3-ethyl-3-exotetracyclo[4.4.0.1.sup.2,5.1.sup.7,10]dodecanyl methacrylate, 3.1 g of 2-(dimethylamino)ethyl methacrylate, 3.6 g of 4-hydroxyphenyl methacrylate, 4.5 g of 3-oxo-2,7-dioxa-tricyclo[4.2.1.0.sup.4,8]nonan-9-yl methacrylate, 6.4 g of PAG Monomer 1, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Comparative Polymer 3. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0137] Copolymer Composition Ratio (Molar Ratio) [0138] 3-ethyl-3-exotetracyclo[4.4.0.1.sup.2,5.1.sup.7,10]dodecanyl methacrylate:2-(dimethylamino)ethyl methacrylate:4-hydroxyphenyl methacrylate:3-oxo-2,7-dioxatricyclo[4.2.1.0.sup.4,8]nonan-9-yl methacrylate:PAG Monomer 1=0.3:0.2:0.2:0.2:0.1 [0139] Mw=7,300 [0140] Mw/Mn=1.88

##STR00122##

Comparative Synthesis Example 4

[0141] Comparative Polymer 4 was synthesized by the same procedure as in Synthesis Example 1 aside from using Comparative PAG Monomer 1 instead of PAG Monomer 1. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0142] Copolymer Composition Ratio (Molar Ratio) [0143] Comparative PAG Monomer 1:2-(dimethylamino)ethyl methacrylate:4-hydroxyphenyl methacrylate=0.2:0.3:0.5 [0144] Mw=10,100 [0145] Mw/Mn=1.71

##STR00123##

Comparative Synthesis Example 5

[0146] A flask was charged with 8.2 g of 3-ethyl-3-exotetracyclo[4.4.0.1.sup.2,5.1.sup.7,10]dodecanyl methacrylate, 3.6 g of 4-hydroxyphenyl methacrylate, 9.0 g of 3-oxo-2,7-dioxatricyclo[4.2.1.0.sup.4,8]nonan-9-yl methacrylate, 5.6 g of Comparative PAG Monomer 1, and 40 g of THF solvent. The reactor was cooled at −70° C. in nitrogen atmosphere, after which vacuum pumping and nitrogen blow were repeated three times. The reactor was warmed up to room temperature, whereupon 1.2 g of AIBN as polymerization initiator was added. The reactor was heated at 60° C., whereupon reaction ran for 15 hours. The reaction solution was poured into 1 L of isopropyl alcohol for precipitation. The precipitate was collected by filtration and dried in vacuum at 60° C., yielding a white polymer, designated Comparative Polymer 5. The polymer was analyzed by .sup.13C- and .sup.1H-NMR and GPC, with the results shown below.

[0147] Copolymer Composition Ratio (Molar Ratio) [0148] 3-ethyl-3-exotetracyclo[4.4.0.1.sup.2,5.1.sup.7,10]dodecanyl methacrylate: 4-hydroxyphenyl methacrylate: 3-oxo-2,7-dioxatricyclo[4.2.1.0.sup.4,8]nonan-9-yl methacrylate: Comparative PAG Monomer 1=0.3:0.2:0.4:0.1 [0149] Mw=7,300 [0150] Mw/Mn=1.88

##STR00124##

2. Preparation of Resist Composition

Examples 1 to 10 and Comparative Examples 1 to 6

[0151] Positive resist compositions were prepared by dissolving the polymer and components in a solvent in accordance with the recipe shown in Table 1, and filtering through a filter having a pore size of 0.2 μm. The solvent contained 100 ppm of surfactant FC-4430 (3M). The components in Table 1 are as identified below.

Polymers 1 to 10:

[0152] as synthesized in Synthesis Examples 1 to 10

Comparative Polymers 1 to 5:

[0153] as synthesized in Comparative Synthesis Examples 1 to 5

Organic Solvents:

[0154] PGMEA (propylene glycol monomethyl ether acetate)

[0155] PGME (propylene glycol monomethyl ether)

[0156] CyH (cyclohexanone)

Basic Compound:

[0157] Amine 1 of the following structural formula

##STR00125##

3. EB Lithography Patterning Test

[0158] Using a coater/developer system Clean Track Mark 5 (Tokyo Electron Ltd.), the positive resist composition was spin coated onto a silicon substrate of diameter 6 inches (which had been vapor primed with hexamethyldisilazane) and prebaked on a hot plate at 110° C. for 60 seconds to form a resist film of 80 nm thick. Using a system HL-800D (Hitachi Ltd.) at an accelerating voltage of 50 kV, the resist film was exposed imagewise to EB in a vacuum chamber.

[0159] Using Clean Track Mark 5, after the exposure, the resist film was baked (PEB) on a hot plate at the temperature shown in Table 1 for 60 seconds and puddle developed in the developer shown in Table 1 for 30 seconds to form a positive pattern.

[0160] Resolution is a minimum size at the exposure dose (sensitivity) that provides a 1:1 resolution of a 100-nm line-and-space pattern. The 100-nm L/S pattern was measured for roughness (LWR) under SEM. Table 1 shows the composition of resist and the sensitivity, resolution and LWR on EB lithography.

TABLE-US-00002 TABLE 1 Basic Organic PEB Polymer compound solvent temp. Sensitivity Resolution LWR (pbw) (pbw) (pbw) (° C.) Developer (μC/cm.sup.2) (nm) (nm) Example 1 Polymer 1 — PGMEA(1,500) — 2- 80 70 3.2 (100) CyH(200) heptanone 2 Polymer 2 — PGMEA(1,500) 70 butyl 85 70 3.8 (1003 CyH(200) acetate 3 Polymer 3 — PGMEA(1,500) — butyl 75 75 3.4 (100) CyH(200) acetate 4 Polymer 4 — PGMEA(1,500) — butyl 75 75 3.1 (100) CyH(200) acetate 5 Polymer 5 — PGMEA(500) 70 butyl 85 70 3.4 (100) CyH(1,450) acetate PGME(50) 6 Polymer 6 — PGMEA(500) 80 isopentyl 45 70 3.6 (100) CyH(1,450) acetate PGME(50) 7 Polymer 7 — PGMEA(500) 60 butyl 48 70 3.3 (100) CyH(1,450) acetate PGME(50) 8 Polymer 8 — PGMEA(500) 80 butyl 85 70 3.0 (100) CyH(1,450) acetate PGME(50) 9 Polymer 9 — PGMEA(500) 80 pentyl 90 70 3.7 (100) CyH(1,450) acetate PGME(50) 10 Polymer 10 — PGMEA(500) 80 butyl 50 70 3.5 (100) CyH(1,450) acetate PGME(50) Comparative 1 Comparative — PGMEA(500) — butyl — film remaining in — Example Polymer 1 CyH(1,450) acetate both exposed and (100) PGME(50) unexposed regions 2 Comparative — PGMEA(1,500) — butyl — no film remaining — Polymer 2 acetate in exposed and (100) unexposed regions 3 Comparative — PGMEA(500) — butyl — film remaining in — Polymer 1 CyH(1,450) acetate both exposed and (50) PGME(50) unexposed regions Comparative Polymer 2 (50) 4 Comparative — PGMEA(500) — butyl — film remaining in — Polymer 3 CyH(1,450) acetate both exposed and (100) PGME(50) unexposed regions 5 Comparative — PGMEA(500) — butyl — negative pattern, — Polymer 4 CyH(1,450) acetate pattern collapse (100) PGME(50) 6 Comparative Amine 1 PGMEA(500) 90 2.38 wt % 32 75 6.1 Polymer 5 (1.0) CyH(1,450) TMAH aqueous (100) PGME(50) solution

[0161] As is evident from Table 1, a non-chemically-amplified positive resist composition comprising a polymer comprising recurring units having a sulfonium salt bound to the backbone and recurring units containing an amino group exhibits a high resolution and a low edge roughness. In Comparative Example 1, the decomposition of the sulfonium salt upon light exposure occurred, but contributed to only a slight increase of solubility in the developer so that the exposed region of resist film is not fully dissolved, failing to form a positive pattern. In Comparative Example 2, since no polarity switch occurred upon light exposure, both the exposed and unexposed regions of resist film were dissolved in the developer. In Comparative Example 3, since Comparative Polymers 1 and 2 were not uniformly mixed within the film, dissolved areas were intermingled with undissolved areas and so residues were left after development. The region where the acid labile group is deprotected becomes insoluble in the developer, whereas the region where the amino group forms a salt with acid is dissolved in the developer. In Comparative Example 4, such contradictory phenomena occurred simultaneously, leaving film residues. In Comparative Example 5, the backbone-bound sulfonic acid generated upon light exposure formed a salt with the backbone-bound amino group between molecules to provide intermolecular crosslinking so that the composition might work as negative resist, but no pattern could be formed due to swell. Comparative Example 6 was a conventional chemically amplified resist composition, which exhibited an increase of sensitivity, but a loss of resolution and edge roughness owing to acid diffusion.

[0162] Japanese Patent Application No. 2016-029682 is incorporated herein by reference.

[0163] Although some preferred embodiments have been described, many modifications and variations may be made thereto in light of the above teachings. It is therefore to be understood that the invention may be practiced otherwise than as specifically described without departing from the scope of the appended claims.