Substrate for organic electronic device and method for manufacturing same

Abstract

Provided are a substrate for an organic electronic device (OED) and a use thereof. Provided is a substrate for a device having excellent durability by preventing interlayer delamination occurring due to internal stress in a structure in which an organic material and an inorganic material are mixed. In addition, provided is an OED having another required physical property such as excellent light extraction efficiency using the substrate, as well as the excellent durability.

Claims

1. A substrate for an organic electronic device (OED), comprising: a flexible base film; an inorganic material layer present on the base film; and an elastic layer present on, under, or in the inorganic material layer, and including a material having an elastic modulus at 23° C. of 20 to 400 GPa, wherein the inorganic material layer includes first and second sub layers, each having a thickness of 7 nm or less, and wherein the first sub layer has a refractive index of 1.4 to 1.9, and the second sub layer has a refractive index of 2.0 to 2.6.

2. The substrate according to claim 1, wherein the base film has a haze of 3 to 30%.

3. The substrate according to claim 1, wherein the base film has a refractive index with respect to light having a wavelength of 550 nm of 1.7 or more.

4. The substrate according to claim 1, wherein the inorganic material layer has a thickness of 10 to 100 nm.

5. The substrate according to claim 1, wherein the inorganic material layer and the base film have a difference in refractive index of 1 or less.

6. The substrate according to claim 1, wherein the first sub layer and the second sub layer are stacked in contact with each other, and include different oxide layers, nitride layers, or oxynitride layers, respectively.

7. The substrate according to claim 1, wherein the elastic layer has a refractive index of 1.7 or less.

8. A substrate for an organic electronic device (OED), comprising: a flexible base film; an inorganic material layer present on the base film; and an elastic layer present on, under, or in the inorganic material layer, and including a material having an elastic modulus at 23° C. of 20 to 400 GPa, wherein the elastic layer includes TiO.sub.2, Si.sub.3N.sub.4, MgO, Al.sub.20.sub.3, ZnO, or ZrO.sub.2.

9. A substrate for an organic electronic device (OED), comprising: a flexible base film; an inorganic material layer present on the base film; and an elastic layer present on, under, or in the inorganic material layer, and including a material having an elastic modulus at 23° C. of 20 to 400 GPa, wherein the elastic layer is a molecular layer deposition (MLD) layer including a metal or non-metal chelate compound and alkylene glycol, or the reaction product.

10. The substrate according to claim 1, wherein the elastic layer is an initiated chemical vapor deposition (iCVD) layer including a polymerization unit of a compound of Formula 1 or 2: ##STR00002## wherein R.sup.1, R.sup.d, and R.sup.e each independently is hydrogen, a hydroxyl group, an epoxy group, an alkoxy group, or a monovalent hydrocarbon group, at least one of R.sup.1 is an alkenyl group, at least one of R.sup.d and R.sup.e is an alkenyl group, n is a number from 1 to 10, and o is a number from 3 to 10.

11. An organic electronic device (OED), comprising: the substrate for an OED of claim 1; and a device region having a first electrode layer, an organic material layer, and a second electrode layer, which are present on an inorganic material layer of the substrate.

12. A light source for a display, comprising: the OED of claim 11.

13. A lighting device, comprising: the OED of claim 11.

14. A method of manufacturing the substrate for an OED of claim 1, comprising: forming an elastic layer on, under, or in an inorganic material layer formed on a flexible base film, wherein the inorganic material layer is formed in a stack structure of first and second sub layers, each having a thickness of 7 nm or less, using atomic layer deposition (ALD).

15. The method according to claim 14, wherein the elastic layer is formed by MLD or iCVD.

16. An organic electronic device (OED), comprising: the substrate for an OED of claim 8; and a device region having a first electrode layer, an organic material layer, and a second electrode layer, which are present on an inorganic material layer of the substrate.

17. A light source for a display, comprising: the OED of claim 16.

18. A lighting device, comprising: the OED of claim 16.

19. An organic electronic device (OED), comprising: the substrate for an OED of claim 9; and a device region having a first electrode layer, an organic material layer, and a second electrode layer, which are present on an inorganic material layer of the substrate.

20. A light source for a display, comprising: the OED of claim 19.

21. A lighting device, comprising: the OED of claim 19.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The above and other objects, features, and advantages of the present application will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the adhered drawings, in which:

(2) FIGS. 1 to 3 show structures of exemplary substrates.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

(3) Hereinafter, exemplary embodiments of the present application will be described in detail with reference to Examples according to the present application and Comparative Examples not according to the present application.

(4) However, the scope of the present application is not limited to the embodiments to be disclosed below.

Example 1

(5) A barrier layer, an Al.sub.2O.sub.3 layer, and an elastic layer, an MLD layer (a combination layer of trimethylaluminum (TMA) and ethylene glycol (EG), elastic modulus: approximately 20 to 200 GPa (23° C.)) were alternately formed on a base film, a polyimide (PI) film, by the following method. The PI film was disposed on a glass substrate as a carrier substrate. Subsequently, an MLD for forming the elastic layer and an ALD for forming the barrier layer were repeatedly performed. Here, the Al.sub.2O.sub.3 layer as the barrier layer was formed of a material having a refractive index of approximately 1.5 to 1.8 during independent deposition, and the MLD layer was formed of a material having a refractive index of approximately 1.45 to 1.7 during independent deposition. The Al.sub.2O.sub.3 layer was formed by alternately adsorbing a trimethylaluminum layer and a water (H.sub.2O) layer as precursors at approximately 200° C. by the known ALD. In addition, the MLD layer was formed by alternately adsorbing trimethylaluminum and ethylene glycol as precursors at approximately 100° C. by the known MLD. A structure of the formed layer was the same as a structure formed by repeating the structure of the Al.sub.2O.sub.3 layer (thickness: 0.5 to 30 mm)/the MLD layer (thickness: 200 to 500 mm) 2.5 to 3 times.

(6) Subsequently, a hole injection electrode layer including indium tin oxide (no) was formed on the above layer by a known sputtering method, and a hole injection layer including N,N′-Di-[(1-nalhthyl)-N,N′-diphenyl]-1,1′-biphenyl)-4,4′-diamine (α-NPD) and an emitting layer including 4,4′,4′″-tris(N-carbazolyl)-triphenylamine (TCTA; Firpic, TCTA;Fire6) were sequentially formed by deposition. Subsequently, a low refractive organic layer was formed to a thickness of approximately 70 nm by co-depositing an electron transport compound, TCTA, and a low refractive material, LiF (refractive index: approximately 1.39) on the emitting layer to have a refractive index of the total layer of approximately 1.66. Subsequently, a device was manufactured by forming an aluminum (Al) electrode as an electron injection reflective electrode on the low refractive organic layer by vacuum deposition. Subsequently, an encapsulation structure was adhered to the device in a glove box in an Ar gas atmosphere, thereby manufacturing an OED.

Example 2

(7) An OED including a substrate for an OED having an elastic modulus of 25 to 130 GPa was manufactured by forming a layer by the same method as described in Example 1, and changing cycles for performing MLD and ALD to satisfy Equation 1.
0.2<N.sub.A/(N.sub.A+N.sub.B)<0.8  [Equation 1]

(8) In Equation 1, N.sub.A is the number of ALD layers included in the substrate, and N.sub.B is the number of MLD layers included in the substrate.

Example 3

(9) An OED was manufactured by the same method as described in Example 1, except that a substrate for an OED including a stack structure of an Al.sub.2O.sub.3 layer (thickness: 0.5 to 30 nm)/an iCVD layer (thickness: 200 to 500 nm) was formed by applying and inducing the iCVD layer (elastic modulus: approximately 4 to 8 GPa (23° C.), refractive index: approximately 1.5 to 1.6) using trivinyltrimethylcyclotrisiloxane (V3D3) as an elastic layer, instead of an MLD layer, to a surface of a PI film or a surface of the Al.sub.2O.sub.3 layer as a barrier layer. The iCVD layer was formed of the V3D3 as a monomer, and tert-butyl peroxide (TBP, 97%, Aldrich) as an initiator, and the initiator in the mixture of the monomer and the initiator was thermally decomposed with a filament maintained at approximately 250 to 300° C., and polymerization was induced on a surface of the PI film or the barrier layer (Al.sub.2O.sub.3) in which a temperature was maintained at 30 to 40° C.

Examples 4 to 7

(10) A substrate for an OED and an OED including the substrate were manufactured by the same method as described in Example 3, except that the type of a monomer for forming an iCVD layer and stacking cycles were changed as shown in Table 1.

Comparative Example 1

(11) A substrate and an OED were manufactured by the same method as described in Example 1, except that an MLD layer was not formed and only a barrier layer was formed to have the same thickness as the total thickness of the elastic layer and the inorganic material layer in Example 1.

Experimental Example 1

(12) After the OEDs manufactured in Examples 1 to 7 and Comparative Example 1 were operated under the same conditions, delamination and/or generation of a crack were (was) observed at an interface between a PI film and an inorganic material layer and an interface between an inorganic material layer and an electrode layer. As a result, in the device of Comparative Example 1, delamination and a crack were observed at the interface between the PI film and the inorganic material layer and the interface between the inorganic material layer and the electrode layer, but in Examples 1 to 7, such failures were not observed.

(13) TABLE-US-00001 TABLE 1 Example Example Example Example Example Example Example Comparative 1 2 3 4 5 6 7 Example 1 Inorganic ALD ALD ALD ALD ALD ALD ALD ALD material layer layer layer layer layer layer layer layer layer (Al.sub.2O.sub.3) (Al.sub.2O.sub.3) (Al.sub.2O.sub.3) (Al.sub.2O.sub.3) (Al.sub.2O.sub.3) (Al.sub.2O.sub.3) (Al.sub.2O.sub.3) (Al.sub.2O.sub.3) (material) Elastic MLD MLD iCVD iCVD iCVD iCVD iCVD none layer layer layer layer layer layer layer layer (material) (TMA (TMA (V3D3) (FDEA) (GMA) (HEMA) (GMA) and EG) and EG) Stacking 2.5 to 3 — 1 1 1 2 3 none cycles TMA: Trimethylaluminum EG: Ethylene glycol V3D3: Trivinyltrimethylcyclotrisiloxane FDEA: 1H, 1H, 2H, 2H-perfluorodecyl (meth)acrylate GMA: Glycidyl (meth)acrylate HEMA: 2-hydroxyethyl (meth)acrylate

(14) The present application can provide a substrate for a device having excellent durability by preventing interlayer delamination occurring due to internal stress in a structure in which an organic material and an inorganic material are mixed. In addition, the present application can provide an OED having another required physical property such as excellent light extraction efficiency using the substrate, as well as the excellent durability.

(15) While the invention has been shown and described with reference to certain exemplary embodiments thereof, it will be understood by those skilled in the related art that various changes in form and details may be made therein without departing from the scope of the invention as defined by the appended claims.