Electrolytic processing jig and electrolytic processing method

Abstract

An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate includes a base body having a flat plate shape; and a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid to apply a voltage between the processing target substrate and the direct electrode. An irregularity pattern is formed on a front surface of the electrolytic processing jig at a processing target substrate side.

Claims

1. An electrolytic processing jig configured to perform an electrolytic processing on a processing target substrate by using a processing liquid supplied to the processing target substrate the electrolytic processing jig comprising: a base body provided above the processing target substrate and having a flat plate shape; a direct electrode provided on a front surface of the base body and configured to be brought into contact with the processing liquid supplied on the processing target substrate to apply a voltage between the processing target substrate and the direct electrode; a moving device configured to move the base body in a vertical direction; and a terminal having elasticity, protruded from the front surface of the base body, and configured to apply a voltage to the processing target substrate, wherein an irregularity pattern is formed on a front surface of the electrolytic processing jig, the direct electrode provided on the front surface of the base body includes multiple direct electrodes, and the irregularity pattern is formed by a gap between adjacent electrodes of the multiple direct electrodes.

2. The electrolytic processing jig of claim 1, wherein the irregularity pattern is formed on the entire front surface of the electrolytic processing jig.

3. The electrolytic processing jig of claim 1, wherein the irregularity pattern is formed by providing a protrusion on a front surface of the direct electrode.

4. The electrolytic processing jig of claim 3, wherein the protrusion formed on the front surface of the direct electrode is plural in number.

5. The electrolytic processing jig of claim 1, wherein the irregularity pattern is formed by protrudingly curving the front surface of the base body.

6. The electrolytic processing jig of claim 1, further comprising: an indirect electrode configured to form an electric field in the processing liquid.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a diagram illustrating a schematic configuration of a manufacturing apparatus of a semiconductor device, equipped with an electrolytic processing jig according to a first exemplary embodiment.

(2) FIG. 2 is a plan view illustrating a schematic configuration of the electrolytic processing jig according to the first exemplary embodiment.

(3) FIG. 3 is a diagram illustrating a state in which a liquid puddle of a plating liquid is formed on a wafer in the first exemplary embodiment.

(4) FIG. 4 is a diagram illustrating a state in which the electrolytic processing jig is lowered so that a terminal of the electrolytic processing jig is brought into contact with the wafer and a direct electrode of the electrolytic processing jig is brought into contact with the plating liquid on the wafer in the first exemplary embodiment.

(5) FIG. 5 is a diagram illustrating a state in which the direct electrode is brought into contact with the plating liquid on the wafer in the first exemplary embodiment.

(6) FIG. 6 is a diagram illustrating a state in which a voltage is applied between an indirect electrode and the wafer in the first exemplary embodiment.

(7) FIG. 7 is a diagram illustrating a state in which a voltage is applied between the direct electrode and the wafer in the first exemplary embodiment.

(8) FIG. 8 is a diagram illustrating a state in which the electrolytic processing jig is raised to be separated from the plating liquid in the first exemplary embodiment.

(9) FIG. 9 is a cross sectional view schematically illustrating another configuration of an irregularity pattern of the electrolytic processing jig in the first exemplary embodiment.

(10) FIG. 10A and FIG. 10B are plan views schematically illustrating yet another configuration of the irregularity pattern of the electrolytic processing jig in the first exemplary embodiment.

(11) FIG. 11A and FIG. 11B are cross sectional views schematically illustrating still yet another configuration of the irregularity pattern of the electrolytic processing jig in the first exemplary embodiment.

(12) FIG. 12A to FIG. 12C are cross sectional views schematically illustrating still yet another configuration of the irregularity pattern of the electrolytic processing jig in the first exemplary embodiment.

(13) FIG. 13 is a cross sectional view schematically illustrating still yet another configuration of the irregularity pattern of the electrolytic processing jig in the first exemplary embodiment.

(14) FIG. 14 is a diagram illustrating a schematic configuration of a manufacturing apparatus of a semiconductor device, equipped with an electrolytic processing jig according to a second exemplary embodiment.

(15) FIG. 15 is a plan view illustrating a schematic configuration of the electrolytic processing jig according to the second exemplary embodiment.

(16) FIG. 16 is a diagram illustrating a state in which the electrolytic processing jig is lowered and a terminal thereof is brought into contact with a wafer in the second exemplary embodiment.

(17) FIG. 17 is a diagram illustrating a state in which a plating liquid is supplied from through holes in the second exemplary embodiment.

(18) FIG. 18 is a diagram illustrating a state in which the plating liquid is filled between the electrolytic processing jig and the wafer and a direct electrode is brought into contact with the plating liquid on the wafer in the second exemplary embodiment.

(19) FIG. 19 is a diagram illustrating a state in which air is supplied from the through holes in the second exemplary embodiment.

(20) FIG. 20 is a diagram illustrating a state in which the electrolytic processing jig is raised to be separated from the plating liquid in the second exemplary embodiment.

(21) FIG. 21 is a plan view schematically illustrating another configuration of the electrolytic processing jig according to the second exemplary embodiment.

(22) FIG. 22 is a diagram illustrating a schematic configuration of a manufacturing apparatus of a semiconductor device, equipped with an electrolytic processing jig according to a third exemplary embodiment.

(23) FIG. 23 is a diagram illustrating a state in which the electrolytic processing jig is arranged to be inclined in the third exemplary embodiment.

(24) FIG. 24 is a diagram illustrating a state in which the other end of the electrolytic processing jig is lowered so that a terminal thereof is brought into contact with a wafer and a direct electrode is brought into contact with a plating liquid on the wafer in the third exemplary embodiment.

(25) FIG. 25 is a diagram illustrating a state in which the other end of the electrolytic processing jig is raised to be separated from the plating liquid in the third exemplary embodiment.

(26) FIG. 26 is a diagram illustrating a state in which the electrolytic processing jig is separated from the plating liquid in the third exemplary embodiment.

DETAILED DESCRIPTION

(27) Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings. However, it should be noted again that the exemplary embodiments are not limiting the present disclosure.

1. First Exemplary Embodiment

(28) A first exemplary embodiment will be described. FIG. 1 is a diagram illustrating a schematic configuration of a manufacturing apparatus of a semiconductor device, equipped with an electrolytic processing jig according to the present exemplary embodiment. A manufacturing apparatus 1 is configured to perform a plating processing as an electrolytic processing on a semiconductor wafer W (hereinafter, simply referred to as “wafer W”) as a processing target substrate. This wafer W is provided with a seed layer (not shown) formed on a surface thereof, and this seed layer is used as an electrode. Further, in the various drawings, sizes and dimensions of individual components do not necessarily correspond to actual sizes and dimensions thereof to ease understanding of the present disclosure.

(29) The manufacturing apparatus 1 is equipped with a wafer holding unit 10. The wafer holding unit 10 is a spin chuck configured to hold and rotate the wafer W. The wafer holding unit 10 has a front surface 10a having a diameter larger than that of the wafer W when viewed from the top, and this front surface 10a is provided with, by way of example, a suction hole (not shown) for attracting the wafer W. The wafer W can be attracted to and held on the wafer holding unit 10 by being suctioned from this suction hole.

(30) The wafer holding unit 10 is equipped with a driving device 11 having, for example, a motor. The wafer holding unit 10 can be rotated at a preset speed by the driving device 11. Further, the driving device 11 is equipped with an elevation driving unit (not shown) such as a cylinder, so the wafer holding unit 10 can be moved vertically.

(31) An electrolytic processing jig 20 is provided above the wafer holding unit 10, facing the wafer holding unit 10. The electrolytic processing jig 20 has a base body 21 made of an insulator. The base body 21 is of a flat plate shape and has a front surface 21a having a diameter larger than the diameter of the wafer W when viewed from the top. The base body 21 is equipped with terminals 22, direct electrodes 23 and an indirect electrode 24.

(32) The terminals 22 are protruded from the front surface 21a of the base body 21. As shown in FIG. 2, these multiple terminals 22 are provided at a peripheral portion of the base body 21. Further, as depicted in FIG. 1, each terminal 22 is bent and has elasticity. Further, the terminals 22 are arranged such that an imaginary plane formed by leading end portions of the terminals 22, that is, a plane formed by the leading end portions (points) of the respective terminals 22 is substantially parallel to a surface of the wafer W held by the wafer holding unit 10. When a plating processing is performed, the terminals 22 come into contact with a peripheral portion of the seed layer of the wafer W to apply a voltage to the wafer W, as will be described later. Further, the shape of the terminal 22 is not limited to the shown example of the present exemplary embodiment as long as it has elasticity.

(33) As illustrated in FIG. 2, the multiple direct electrodes 23 are provided to be distributed in the entire front surface 21a of the base body 21. Each direct electrode 23 has a hexagonal shape when viewed from the top. These multiple direct electrodes 23 are arranged in a substantially honeycomb shape, and adjacent direct electrodes 23 are spaced apart from each other with gaps 25 therebetween. Further, as shown in FIG. 1, these multiple direct electrodes 23 are arranged to face the wafer W held by the wafer holding unit 10 substantially in parallel with the wafer W. As these multiple direct electrode 23 serve as protruding portions and the gaps 25 serve as recesses, a front surface of the electrolytic processing jig 20, that is, a surface of the electrolytic processing jig 20 at the wafer W side is provided with irregularity pattern. Furthermore, as described above, the direct electrodes 23 are distributed in the entire front surface 21a of the base body 21, and this irregularity pattern is formed on the entire front surface of the electrolytic processing jig 20 at the wafer W side.

(34) When the plating processing is performed, these multiple direct electrodes 23 are brought into contact with a plating liquid on the wafer W, as will be explained later. Further, when viewed from the top, the shape of the direct electrode 23 is not limited to the shown example of the present exemplary embodiment but the direct electrode 23 may be of, by way of non-limiting example, a circular shape or a rectangular shape.

(35) The indirect electrode 24 is provided within the base body 21. That is, the indirect electrode 24 is not exposed to the outside.

(36) The terminals 22, the direct electrodes 23 and the indirect electrode 24 are connected to a DC power supply 30. The terminals 22 are connected to a cathode side of the DC power supply 30. The direct electrodes 23 and the indirection electrode 24 are connected to an anode side of the DC power supply 30.

(37) A moving device 40 configured to move the base body 21 in the vertical direction is provided at a rear surface 21b side of the base body 21. The moving device 40 is equipped with an elevation driving unit (not shown) such as a cylinder. Further, a configuration of the moving device 40 is not particularly limited as long as the base body 21 is movable up and down.

(38) A nozzle 50 for supplying the plating liquid onto the wafer W is provided between the wafer holding unit 10 and the electrolytic processing jig 20. The nozzle 50 is configured to be movable in the horizontal direction and the vertical direction by a moving mechanism 51 to be advanced to and retreated from the wafer holding unit 10. Further, the nozzle 50 communicates with a plating liquid source (not shown) which stores the plating liquid therein, and the plating liquid is supplied from this plating liquid source to the nozzle 50. Further, the plating liquid may be, by way of non-limiting example, a mixed solution of copper sulfate and sulfuric acid, and, in this case, copper ions are included in the plating liquid. Further, in the present exemplary embodiment, though the nozzle 50 is used as a processing liquid supply unit, various other kinds of devices may be used as a mechanism of supplying the plating liquid.

(39) Furthermore, a cup (not shown) configured to receive and collect the liquid dispersed from or falling from the wafer W may be provided around the wafer holding unit 10.

(40) The manufacturing apparatus 1 having the above-described configuration is equipped with a control unit (not shown). The control unit may be, for example, a computer and includes a program storage unit (not shown). The program storage unit stores a program for controlling a processing on the wafer W in the manufacturing apparatus 1. Further, the program may be recorded in a computer-readable recording medium such as a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO) or a memory card, and may be installed from this recording medium to the control unit.

(41) Now, a plating processing in a manufacturing method using the manufacturing apparatus 1 configured as described above will be discussed.

(42) First, as shown in FIG. 3, in the state that the wafer holding unit 10 and the electrolytic processing jig 20 are placed to face each other, the nozzle 50 is moved, by the moving mechanism 51, to a position above a central portion of the wafer W held by the wafer holding unit 10. At this time, a distance between the front surface 10a of the wafer holding unit 10 and the front surface 21a of the base body 21 of the electrolytic processing jig 20 is about 100 mm. Thereafter, while rotating the wafer W by the driving device 11, a plating liquid M is supplied to the central portion of the wafer W from the nozzle 50. The supplied plating liquid M is diffused to the entire surface of the wafer W by a centrifugal force. At this time, as the wafer W is rotated, the plating liquid M is uniformly diffused within the surface of the wafer W. Then, if the supply of the plating liquid M from the nozzle 50 is stopped and the rotation of the wafer W is stopped, the plating liquid M stays on the wafer W by a surface tension of the plating liquid M, so that a liquid puddle of the plating liquid M having a uniform thickness is formed.

(43) Afterwards, the electrolytic processing jig 20 is lowered by the moving device 40, as shown in FIG. 4. At this time, the distance between the front surface 10a of the wafer holding unit 10 and the front surface 21a of the base body 21 of the electrolytic processing jig 20 is in the range from about 1 millimeter to several tens of millimeters. Then, the terminals 22 are brought into contact with the wafer W, and the direct electrodes 23 are brought into contact with the plating liquid M on the wafer W. Since the terminals 22 have elasticity, the distance between the front surface 10a and the front surface 21a in the plating liquid M can be adjusted by adjusting the height of the terminals 22. Then, by applying a preset load to each terminal 22, an electric contact point is formed between the terminal 22 and the wafer W. By applying the load in this way, the electric contact point can be formed sufficiently even in case that the seed layer of the wafer W has a thin film such as a natural oxide film formed on the surface of the seed layer or a highly rigid material, in which the electrical contact point is typically difficult to form, is used.

(44) Here, when bringing the direct electrodes 23 into contact with the plating liquid M by lowering the electrolytic processing jig 20, air may enter a gap between the electrolytic processing jig 20 and the plating liquid M, that is, the front surface 21a of the base body 21 and the plating liquid M, that is, a gap between the surface of the electrolytic processing jig 20 at the wafer W side and the plating liquid M. Even in this case, it is possible to remove the air through the recesses of the irregularity pattern of the electrolytic processing jig 20, that is, through the gaps 25, as shown in FIG. 5. Accordingly, generation of air bubbles in the plating liquid M can be suppressed. Therefore, adhesion of the air bubbles to surfaces of the direct electrodes 23 can be suppressed, so that stable plating can be carried out.

(45) Afterwards, an electric field (electrostatic field) is formed by applying a DC voltage with the indirect electrode 24 as the anode and the wafer W as the cathode. As a result, sulfuric acid ions S as negatively charged particles are gathered at the front surface side of the electrolytic processing jig 20 (on the side of the indirect electrode 24 and the direct electrodes 23), and copper ions C as positively charged particles are moved to the surface side of the wafer W, as depicted in FIG. 6.

(46) Here, to avoid the direct electrodes 23 from serving as the cathode, the direct electrodes 23 are set in an electrically floating state without being connected to the ground. In this case, since charge exchange is suppressed in the surfaces of the electrolytic processing jig 20 and the wafer W, the electrically charged particles attracted by the electrostatic field are arranged on the surfaces of the direct electrodes 23. Further, the copper ions C are uniformly arranged on the surface of the wafer W. Further, since the charge exchange of the copper ions C is not performed and electrolysis of water is suppressed on the surface of the wafer W, an electric field can be strengthen when the voltage is applied between the indirect electrode 24 and the wafer W. Further, as the movement of the copper ions C can be accelerated by this high electric field, a plating rate of the plating processing can be improved. Further, by controlling this electric field as required, the copper ions C arranged on the surface of the wafer W is also controlled as required. As stated above, since the generation of the air bubbles on the surfaces of the direct electrodes 23 is suppressed, the copper ions C arranged on the surfaces of the direct electrodes 23 are stabilized.

(47) Then, if a sufficient amount of the copper ions C is moved toward the wafer W side to be accumulated thereon, a voltage is applied with the direct electrodes 23 as the anode and the wafer W as the cathode, so that an electric current is allowed to flow between the direct electrodes 23 and the wafer W. As a result, as depicted in FIG. 7, the charge exchange of the copper ions C uniformly arranged on the surface of the wafer W is performed, so that the copper ions C are reduced and a copper plate 60 is precipitated on the surface of the wafer W. At this time, the sulfuric acid ions S are oxidized by the direct electrodes 23.

(48) Since the copper ions C are reduced in the state that they are sufficiently accumulated to be uniformly arranged on the surface of the W, the copper plate 60 can be uniformly precipitated on the surface of the wafer W. As a consequence, density of crystals in the copper plate 60 is increased, so that the copper plate 60 having high quality can be formed. Further, since the reduction is carried out in the state that the copper ions C are uniformly arranged on the surface of the wafer W, the copper plate 60 can be uniformly formed with high quality.

(49) As the supply of the plating liquid M from the nozzle 50, the movement of the copper ions C by the indirect electrode 24 and the reduction of the copper ions C by the direct electrodes 23 and the wafer W as described above are repeated, the copper plate 60 grows to have a preset film thickness.

(50) Thereafter, the electrolytic processing jig 20 is raised by the moving device 40, as shown in FIG. 8. At this time, since the air exists in the gaps 25 as mentioned above, the plating liquid M does not exist in the gaps 25. Therefore, a contact area between the plating liquid M and the surface of the electrolytic processing jig 20 is reduced, so that the surface tension of the plating liquid M applied to the electrolytic processing jig 20 can be reduced.

(51) Further, since the irregularity pattern is formed on the entire front surface of the electrolytic processing jig 20, that is, the surface of the electrolytic processing jig 20 at the wafer W side, air is introduced to an interface between an outer peripheral portion of the plating liquid M and the surface of the electrolytic processing jig 20 at the wafer W side. This air contributes to further reducing the surface tension of the plating liquid M applied to the electrolytic processing jig 20. Therefore, a force required to separate the electrolytic processing jig 20 from the plating liquid M can be reduced.

(52) Through the above-described operations, the series of plating processing in the manufacturing apparatus 1 are completed.

(53) According to the exemplary embodiment described above, the plating processing can be appropriately performed on the wafer W in the state that the electrolytic processing jig 20 is placed to face the wafer W and the direct electrodes 23 are in contact with the plating liquid M. Further, since the movement of the copper ions C by the indirect electrode 24 and the reduction of the copper ions C by the direct electrodes 23 and the wafer W are performed individually, the reduction of the copper ions C can be conducted in the state that the copper ions C are sufficiently and uniformly accumulated on the surface of the wafer W. Therefore, the plating processing can be uniformly performed on the surface of the wafer W.

(54) Moreover, according to the present exemplary embodiment, since the surface of the electrolytic processing jig 20 at the wafer W side has the irregularity pattern, the air which enters the gap between the surface of the electrolytic processing jig 20 at the wafer W side and the plating liquid M can be removed through the gaps 25 when the direct electrodes 23 are brought into contact with the plating liquid M by lowering the electrolytic processing jig 20 before the plating processing. Therefore, the generation of the air bubbles in the plating liquid M can be suppressed. Since the adhesion of the air bubbles to the surfaces of the direct electrodes 23 can be suppressed, the stable plating is enabled.

(55) In addition, depending on processing conditions, air bubbles of, for example, a hydrogen gas may be generated during the plating processing. In such a case, these air bubbles generated in the plating processing can be removed through the gaps 25, so that the plating processing can appropriately carried out.

(56) Further, since the surface of the electrolytic processing jig 20 at the wafer W side has the irregularity pattern, the air exists in the gaps 25 when the electrolytic processing jig 20 is raised and separated from the plating liquid M after the plating processing. Therefore, the surface tension of the plating liquid M applied to the electrolytic processing jig 20 can be reduced. Furthermore, since the air is introduced to the interface between the outer peripheral portion of the processing liquid M and the electrolytic processing jig 20, the surface tension of the plating liquid M can be further reduced. Accordingly, the force required to separate the electrolytic processing jig 20 from the plating liquid M can be reduced, so that the separation thereof can be eased.

(57) In the above-described exemplary embodiment, the front surface of the electrolytic processing jig 20 has the irregularity pattern as the direct electrodes 23 serve as the protrusions and the gaps 25 serve as the recesses. However, the irregularity pattern is not limited thereto.

(58) As depicted in FIG. 9, grooves 70 may be formed on the front surface 21a of the base body 21. The grooves 70 are formed at positions corresponding to the gaps 25. As these gaps 25 and the grooves 70 serve as the recesses while the direct electrodes 23 and portions in the vicinity of the front surface 21a of the base body 21 serve as the protrusions, the irregularity pattern is formed on the front surface of the electrolytic processing jig 20.

(59) As illustrated in FIG. 10A and FIG. 10B, grooves 71 may be formed on the surface of the direct electrode 23. The grooves 71 may be of any pattern. For example, the grooves 71 may be formed along diagonal lines of the direct electrode 23 as shown in FIG. 10A or a plurality of grooves 71 extended in one direction may be formed as shown in FIG. 10B. In any cases, the grooves 71 serve as the recesses, and the other portions of the direct electrode 23 other than the grooves 71 serve as the protrusions. That is, the irregularity pattern is formed on the direct electrode 23 itself, so that the front surface of the electrolytic processing jig 20 is provided with the irregularity pattern.

(60) As depicted in FIG. 11A and FIG. 11B, the direct electrode 23 may be provided with a plurality of protrusions 72 projected from the surface thereof. When viewed from the side, the width of the protrusion 72 is not particularly limited. For example, the width of the protrusion 72 may be small as shown in FIG. 11A or may be large as shown in FIG. 11B. In any cases, the irregularity pattern is formed on the direct electrode 23 itself, so that the front surface of the electrolytic processing jig 20 is provided with the irregularity pattern.

(61) As depicted in FIG. 12A to FIG. 12C, the direct electrode 23 may have a surface 23a protruding downwards. That is, the surface 23a may form the protrusion. The surface 23a may be of any shape. For example, a tip end of the surface 23a may be pointed as shown in FIG. 12A and FIG. 12B, and the surface 23a may be curved as shown in FIG. 12C. In any cases, an irregularity pattern is formed on the direct electrode 23 itself, so that the front surface of the electrolytic processing jig 20 is provided with an irregularity pattern. Further, as depicted in FIG. 12A and FIG. 12B, the number of the protrusions of the surface 23a may not be particularly limited.

(62) As illustrated in FIG. 13, the front surface 21a of the base body 21 may be curved protruding downwards. As the front surface 21a of the base body 21 is curved in this way, the front surface of the electrolytic processing jig 20 is provided with the irregularity pattern.

(63) In any of FIG. 9 to FIG. 13, since the irregularity pattern is formed on the front surface of the electrolytic processing jig 20, the same effects as stated above can be achieved. That is, the plating processing can be performed appropriately by suppressing the generation of the air bubbles in the plating liquid M, and the electrolytic processing jig 20 can be easily separated from the plating liquid M.

2. Second Exemplary Embodiment

(64) Now, a second exemplary embodiment will be explained. FIG. 14 is a diagram illustrating a schematic configuration of a manufacturing apparatus of a semiconductor device, equipped with an electrolytic processing jig according to the second exemplary embodiment. Hereinafter, description will be mainly focused on distinctive features of a manufacturing apparatus 1 of the second exemplary embodiment from the manufacturing apparatus 1 of the first exemplary embodiment.

(65) An electrolytic processing jig 20 is provided with through holes 100 extended from the front surface of the electrolytic processing jig 20 to a rear surface thereof. The through hole 100 is formed through a direct electrode 23 and the base body 21, that is, extended from the front surface of the direct electrode 23 to the rear surface 21b of the base body 21. As depicted in FIG. 15, the through hole 100 is formed at a central portion of the corresponding direct electrode 23. Further, the through hole 100 may be configured to be opened or closed.

(66) As depicted in FIG. 14, the through holes 100 are connected to a pipeline 101. The pipeline 101 is connected to an air source 102 configured to supply air and a plating liquid source 103 configured to supply the plating liquid M. Further, the pipeline 101 is provided with a valve 104 configured to switch the supply of the air from the air source 102 and the supply of the plating liquid M from the plating liquid source 103.

(67) Further, in the manufacturing apparatus 1 according to the second exemplary embodiment, since the plating liquid M is supplied through the pipeline 101 and the through holes 100 from the plating liquid source 103, the nozzle 50 and the moving mechanism 51 of the first exemplary embodiment can be omitted. Since the other configuration of the manufacturing apparatus 1 of the second exemplary embodiment is the same as the configuration of the manufacturing apparatus 1 of the first exemplary embodiment, redundant description will be omitted.

(68) Now, a plating processing in a manufacturing method using the manufacturing apparatus 1 configured as described above will be discussed.

(69) First, as shown in FIG. 16, the electrolytic processing jig 20 is lowered by the moving device 40. Then, the terminal 22 is brought into contact with the wafer W.

(70) Then, the through holes 100 are connected to the plating liquid source 103 by the valve 104, and the plating liquid M is supplied to a gap between the electrolytic processing jig 20 and the wafer W through the through hole 100, as depicted in FIG. 17. Air existing between the surface of the electrolytic processing jig 20 at the wafer W side and the wafer W is pushed out from the gap between the electrolytic processing jig 20 and the wafer W by the plating liquid M, so that the generation of the air bubbles in the plating liquid M can be suppressed. Then, as depicted in FIG. 18, the plating liquid M is filled between the electrolytic processing jig 20 and the wafer W, and the direct electrodes 23 come into contact with the plating liquid M.

(71) Thereafter, by applying the DC voltage with the indirect electrode 24 as the anode and the wafer W as the cathode, the electric field (electrostatic field) is formed. Accordingly, sulfuric acid ions S as negatively charged particles are moved to the front surface side of the electrolytic processing jig 20, and the copper ions C as positively charged particles are moved to the front surface side of the wafer W. Further, since the movement of the copper ions C by the indirect electrode 24 is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted here.

(72) Afterwards, by applying the voltage while using the direct electrodes 23 as the anode and the wafer W as the cathode, the copper plate 60 is formed on the front surface of the wafer W. This formation of the copper plate 60 (reduction of the copper ions C) is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted.

(73) Then, when separating the electrolytic processing jig 20 from the plating liquid M, the through holes 100 are connected to the air source 102 by the valve 104, and the air is supplied between the surface of the electrolytic processing jig 20 at the wafer W side and the wafer W through the through holes 100, as depicted in FIG. 19. Accordingly, the plating liquid M is pushed out from the gap between the electrolytic processing jig 20 and the wafer W by the air. At this time, since a contact area between the plating liquid M and the electrolytic processing jig 20 is reduced, a surface tension of the plating liquid M applied to the electrolytic processing jig 20 can be reduced. Then, in this state, the electrolytic processing jig 20 is raised by the moving device 40, as illustrated in FIG. 20. Thus, the force required to separate the electrolytic processing jig 20 from the plating liquid M can be reduced, so that the separation can be easily carried out.

(74) Through the operations as stated above, the series of plating processing in the manufacturing apparatus 1 are ended.

(75) In the present second exemplary embodiment, the same effects as in the first exemplary embodiment can be achieved. That is, the plating processing can be appropriately performed by suppressing the generation of the air bubbles in the plating liquid M, and, further, the electrolytic processing jig 20 can be easily separated from the plating liquid M.

(76) In the above-described exemplary embodiment, the through holes 100 are connected to the air source 102 and the plating liquid source 103. However, another type of supply source may be provided to supply another type of fluid to the through holes 100.

(77) By way of example, although the air is supplied into the gap between the electrolytic processing jig 20 and the wafer W when separating the electrolytic processing jig 20 from the plating liquid M, it may be possible to supply a liquid, such as, but not limited to, water, instead of the air.

(78) Moreover, in the manufacture of the semiconductor device, various kinds of liquid processings are performed before and after the plating processing. By way of example, when performing a cleaning processing before the plating processing, a cleaning liquid such as DIW or IPA is supplied onto the wafer W. The processing liquid such as this cleaning liquid may be supplied onto the wafer W through the through holes 100.

(79) Further, in the above-described exemplary embodiment, though the through holes 100 serve as supply holes through which the air or the plating liquid M is supplied, a part of the multiple through holes 100 may be used as discharge holes for the air or the plating liquid M. In such a case, when supplying the plating liquid M into the gap between the surface of the electrolytic processing jig 20 at the wafer W side and the wafer W, the air existing between the electrolytic processing jig 20 and the wafer W is also discharged from the through holes 100 serving as the discharge holes. Further, when separating the electrolytic processing jig 20 from the plating liquid M, the plating liquid M existing between the electrolytic processing jig 20 and the wafer W is also discharged through the through holes 100 serving as the discharge holes. Accordingly, the effect of suppressing the generation of the air bubbles in the plating liquid M and the effect of the separation of the electrolytic processing jig 20 from the plating liquid M can be further improved.

(80) In the above-described exemplary embodiment, though the electrolytic processing jig 20 is provided with the through holes 100 formed through the direct electrodes 23 and the base body 21, the electrolytic processing jig 20 may be further provided with through holes 110, as illustrated in FIG. 21. The through holes 110 are formed in the gaps 25 to be extended from the front surface 21a of the base body 21 to the rear surface 21b thereof. Further, the number of the through holes 110 formed in each gap 25 is plural. These through holes 110 are connected to the air source 102 and the plating liquid source 103, the same as the through holes 100, and have the same functions as those of the through holes 100. By forming the through holes 110 in addition to the through holes 100, the effect of suppressing the generation of the air bubbles in the plating liquid M and the effect of the separation of the electrolytic processing jig 20 from the plating liquid M can be further ameliorated.

(81) Further, only the through holes 110, instead of the through holes 100, may be formed at the electrolytic processing jig 20. Further, a part of the multiple through holes 110 may be used as discharge holes for the air or the plating liquid M. Furthermore, the through holes 110 may be configured to be opened or closed.

3. Third Exemplary Embodiment

(82) Now, a third exemplary embodiment will be explained. FIG. 22 is a diagram illustrating a schematic configuration of a manufacturing apparatus of a semiconductor device, equipped with an electrolytic processing jig according to the third exemplary embodiment. Hereinafter, description will be mainly focused on distinctive features of a manufacturing apparatus 1 of the third exemplary embodiment from the manufacturing apparatus 1 of the first exemplary embodiment.

(83) In the manufacturing apparatus 1, multiple moving devices 200 are provided instead of the moving device 40 of the first exemplary embodiment. The moving device 200 is configured to move one end 21c and the other end 21d of a periphery of the base body 21 in the vertical direction individually. The moving device 200 is equipped with an elevation driving unit (not shown) such as a cylinder. Further, a configuration of the moving device 200 is not particularly limited as long as it is capable of moving the base body 21 up and down.

(84) Further, since the other configuration of the manufacturing apparatus 1 of the third exemplary embodiment is the same as the configuration of the manufacturing apparatus 1 of the first exemplary embodiment, redundant description will be omitted.

(85) Now, a plating processing in a manufacturing method using the manufacturing apparatus 1 configured as described above will be discussed.

(86) First, the liquid puddle of the plating liquid M is formed on the wafer W by using the nozzle 50. Since this formation of the liquid puddle is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted.

(87) Then, as depicted in FIG. 23, the one end 21c of the base body 21 is located under the other end 21d thereof by the moving device 200. That is, the base body 21 is inclined from the horizontal direction. An inclination angle of the base body 21 may be, by way of example, 5 degrees. Here, the one end 21c of the base body 21 is located at a preset processing position (processing height).

(88) Subsequently, the other end 21d of the base body 21 is lowered by the moving device 200, as shown in FIG. 24. At this time, the one end 21c is not moved, and the base body 21 is pivoted around the one end 21c in an up-and-down direction. Then, the terminals 22 are brought into contact with the wafer W, and the direct electrodes 23 are brought into contact with the plating liquid M on the wafer W.

(89) Here, the air existing in the gap between the electrolytic processing jig 20 and the wafer W is pushed out from the one end 21c to the other end 21d. Therefore, the generation of the air bubbles in the plating liquid M can be suppressed.

(90) Thereafter, by applying the DC voltage while using an indirect electrode 24 as the anode and the wafer W as the cathode, the electric field (electrostatic field) is formed. Accordingly, the sulfuric acid ions S as negatively charged particles are moved to a front surface side of the electrolytic processing jig 20, and the copper ions C as positively charged particles are moved to the front surface side of the wafer W. Further, since the movement of the copper ions C is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted here.

(91) Afterwards, by applying the voltage while using the direct electrodes 23 as the anode and the wafer W as the cathode, the copper plate 60 is formed on the front surface of the wafer W. This formation of the copper plate 60 (reduction of the copper ions C) is the same as the process described in the first exemplary embodiment, detailed description thereof will be omitted.

(92) Then, when separating the electrolytic processing jig 20 from the plating liquid M, the other end 21d of the base body 21 is raised by the moving device 200, as shown in FIG. 25. At this time, the one end 21c is not moved, and the base body 21 is pivoted around the one end 21c in the up-and-down direction.

(93) At this time, air is introduced from the interface between the electrolytic processing jig 20 and the plating liquid M at the side of the other end 21d, that is, an opening between the electrolytic processing jig 20 and the plating liquid M formed at the side of the other end 21d. Accordingly, a contact area between the plating liquid M and the front surface of the electrolytic processing jig 20 is reduced, and a surface tension of the plating liquid M applied to the electrolytic processing jig 20 can be reduced. Then, in this state, the electrolytic processing jig 20 is separated from the plating liquid M, as illustrated in FIG. 26. Thus, the force required for the separation can be reduced, so that the separation can be easily carried out.

(94) Through the operations as stated above, the series of plating processing in the manufacturing apparatus 1 are ended.

(95) In this third exemplary embodiment, the same effects as in the first exemplary embodiment can be achieved. That is, the plating processing can be appropriately performed by suppressing the generation of the air bubbles in the plating liquid M, and, further, the electrolytic processing jig 20 can be easily separated from the plating liquid M.

4. Other Exemplary Embodiments

(96) In the above-described exemplary embodiments, the terminals 22 are brought into contact with the wafer W by lowering the electrolytic processing jig 20 through the moving device 40. In the manufacturing apparatus 1, however, the wafer holding unit 10 may be raised by the driving device 11. Alternatively, both the electrolytic processing jig 20 and the wafer holding unit 10 may be moved. Still more, the placement of the electrolytic processing jig 20 and the wafer holding unit 10 may be reversed, and the electrolytic processing jig 20 may be placed under the wafer holding unit 10.

(97) In the above-described exemplary embodiments, the wafer holding unit 10 is configured as the spin chuck. Instead, a cup having an open top and storing therein the plating liquid M may be used.

(98) The above exemplary embodiments have been described for an example where the plating processing is performed as the electrolytic processing. However, the present disclosure may be applicable to various kinds of electrolytic processing such as etching processing.

(99) Further, the exemplary embodiments have been described for the example where the copper ions C are reduced on the front surface side of the wafer W. However, the present disclosure is also applicable to a case where processing target ions are oxidized at the front surface side of the wafer W. In such a case, the processing target ions are negative ions, and the same electrolytic processing may be performed while setting the anode and the cathode in the reverse way. In this exemplary embodiment, though there is a difference between the oxidation and the reduction of the processing target ions, the same effects as those of the above-described exemplary embodiments can be achieved.

(100) From the foregoing, it will be appreciated that the exemplary embodiment of the present disclosure has been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the embodiment disclosed herein is not intended to be limiting. The scope of the inventive concept is defined by the following claims and their equivalents rather than by the detailed description of the exemplary embodiment. It shall be understood that all modifications and embodiments conceived from the meaning and scope of the claims and their equivalents are included in the scope of the inventive concept.

EXPLANATION OF CODES

(101) 1: Manufacturing apparatus 20: Electrolytic processing jig 21: Base body 22: Terminal 23: Direct electrode 24: Indirect electrode 25: Gap 40: Moving device 60: Copper plate 70: Groove 71: Groove 72: Protrusion 100: Through hole 110: Through hole 200: Moving device C: Copper ion M: Plating liquid S: Sulfuric acid ion W: Wafer (semiconductor wafer)