LITHIUM NIOBATE WAVEGUIDE HAVING WEAK PHASE DRIFT

Abstract

A lithium niobate waveguide having weak phase drift includes a lithium niobate layer, a metal electrode, and a substrate layer. The lithium niobate layer includes a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge. A metal oxide layer is arranged on the upper surface of the lithium niobate central ridge. The substrate layer is located on the lower surface of the lithium niobate layer and is made of silicon, silicon dioxide, a multilayer material made of silicon and silicon dioxide or a multilayer material made of silicon dioxide, metal, and silicon, so as to further realize the purpose of inhibiting phase drift. Compared with other doped structures or other structures, the structure is simple in manufacturing method, and moreover, a very good phase drift suppression effect is achieved.

Claims

1. A lithium niobate waveguide having weak phase drift, comprising: a lithium niobate layer, a metal electrode, and a substrate layer, wherein the lithium niobate layer comprises a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge, wherein a metal oxide layer is disposed on an upper surface of the lithium niobate central ridge, and wherein the substrate layer is located on a lower surface of the lithium niobate layer.

2. The lithium niobate waveguide having weak phase drift as claimed in claim 1, wherein the substrate layer is comprised of silicon, silicon dioxide, a multilayer material made of silicon and silicon dioxide or a multilayer material made of silicon dioxide, metal, and silicon.

3. The lithium niobate waveguide having weak phase drift as claimed in claim 1, wherein metal oxide layers are disposed on upper surfaces of the lithium niobate extension surfaces and a side surface of the central ridge.

4. The lithium niobate waveguide having weak phase drift as claimed in claim 1, further comprising: a covering layer being located on upper surfaces of the metal oxide layers, wherein the lithium niobate layer is not covered with metal oxide, and wherein the covering layer is comprised of silicon dioxide.

5. The lithium niobate waveguide having weak phase drift as claimed in claim 3, wherein the metal electrode is connected to the upper surfaces of the metal oxide layers.

6. The lithium niobate waveguide having weak phase drift as claimed in claim 3, wherein the metal electrode passes through partial or all of the metal oxide layers, and/or partial or all of the lithium niobate extension surfaces, and/or partial or all of the lower substrate layer to be connected to a surface of a lowermost layer that is passed through.

7. The lithium niobate waveguide having weak phase drift as claimed in claim 1, wherein the metal electrode is connected to the upper surfaces of the lithium niobate extension surfaces.

8. The lithium niobate waveguide having weak phase drift as claimed in claim 1, wherein the metal electrode passes through partial or all of the lithium niobate extension surfaces, and/or partial or all of the lower substrate layer to be connected to a surface of a lowermost layer that is passed through.

9. The lithium niobate waveguide having weak phase drift as claimed in claim 4, wherein the metal electrode passes through partial or all of the covering layer, partial or all of the metal oxide layers, and/or partial or all of the lithium niobate extension surfaces, and/or partial or all of the lower substrate layer to be connected to a surface of a lowermost layer that is passed through.

10. The lithium niobate waveguide having weak phase drift as claimed in claim 4, wherein a top surface of the metal electrode is higher, lower or equal to a surface height of the covering layer.

11. The lithium niobate waveguide having weak phase drift as claimed in claim 4, wherein the metal electrode is located in the substrate layer.

12. The lithium niobate waveguide having weak phase drift as claimed in claim 1, wherein the maximum thickness of the metal oxide layers is less than 2 μm.

13. The lithium niobate waveguide having weak phase drift as claimed in claim 1, wherein the metal oxide layers are comprised of aluminum oxide, hafnium oxide, tantalum oxide, zirconium dioxide or titanium dioxide.

14. The lithium niobate waveguide having weak phase drift as claimed in claim 1, wherein a thickness of the lithium niobate central ridge ranges from 0.2 to 3 μm, a thickness of each lithium niobate extension surface ranges from 0.1 to 1 μm, and a width of the lithium niobate central ridge ranges from 0.3 to 3 μm.

Description

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

[0025] In order to more clearly illustrate the specific implementations of the disclosure or the technical solutions in the related art, the drawings used in the description of the specific implementations or the related art will be briefly described below. It is apparent that the drawings in the following descriptions are only some implementations of the disclosure. Other drawings can be obtained from those skilled in the art according to these drawings without any creative work.

[0026] FIG. 1 is a schematic view of a specific embodiment I of a lithium niobate waveguide having weak phase drift.

[0027] FIG. 2 is a schematic view of a specific embodiment II of a lithium niobate waveguide having weak phase drift.

[0028] FIG. 3 is a schematic view of a specific embodiment III of a lithium niobate waveguide having weak phase drift.

[0029] FIG. 4 is a schematic view of a specific embodiment IV of a lithium niobate waveguide having weak phase drift.

[0030] FIG. 5 is a schematic view of a specific embodiment V of a lithium niobate waveguide having weak phase drift.

[0031] FIG. 6 is a schematic view of a specific embodiment VI of a lithium niobate waveguide having weak phase drift.

[0032] In the drawings, 1—Lithium niobate layer, 2—Metal oxide layer, 3—Metal electrode, 4—Substrate layer, 11—Lithium niobate central ridge, 12—Lithium niobate extension surface, 5—Covering layer.

DETAILED DESCRIPTION OF THE INVENTION

[0033] In order to enable those skilled in the art to better understand the solutions of the disclosure, the technical solutions in the embodiments of the disclosure will be clearly and completely described below in combination with the drawings in the embodiments of the disclosure. It is apparent that the described embodiments are only part of the embodiments of the disclosure, not all the embodiments. Based on the embodiments in the disclosure, all other embodiments obtained by those of ordinary skilled in the art without creative work shall fall within the protection scope of the disclosure.

[0034] It is to be noted that terms “first”, “second” and the like in the description, claims and the above mentioned drawings of the disclosure are used for distinguishing similar objects rather than describing a specific sequence or a precedence order. It should be understood that the data used in such a way may be exchanged where appropriate, in order that the embodiments of the disclosure described here can be implemented. In addition, terms “include” and “have” and any variations thereof are intended to cover non-exclusive inclusions. For example, it is not limited for processes, methods, systems, products or devices containing a series of steps or units to clearly list those steps or units, and other steps or units which are not clearly listed or are inherent to these processes, methods, products or devices may be included instead.

[0035] In the disclosure, terms “mount”, “configure”, “provide”, “connect”, “link” and “sleeved” should be broadly understood. For example, the term “connect” may be fixed connection, detachable connection or integral construction. As an alternative, the term “connect” may be mechanical connection, or electrical connection. As an alternative, the term “connect” may be direct connection, or indirect connection through a medium, or communication in two devices, components or constituting parts. For those of ordinary skill in the art, specific meanings of the above mentioned terms in the disclosure may be understood according to a specific condition.

[0036] It is to be noted that the embodiments in the disclosure and the features in the embodiments may be combined with one another without conflict. The disclosure will be described below in detail with reference to the drawings and the embodiments.

Embodiment 1

[0037] As shown in FIG. 1, the disclosure provides a lithium niobate waveguide having weak phase drift. The lithium niobate waveguide having weak phase drift includes a lithium niobate layer 1 and a metal electrode 3. The lithium niobate layer 1 includes a lithium niobate central ridge 11 and lithium niobate extension surfaces 12 extending towards two sides of the lithium niobate central ridge 11. A metal oxide layer 2 is disposed on an upper surface of the lithium niobate central ridge 11. The substrate layer 4 is located on a lower surface of the lithium niobate layer. The substrate layer is made of a silicon dioxide material. The metal electrode 3 is connected to the upper surfaces of the lithium niobate extension surfaces 12. A thickness of the lithium niobate central ridge is 0.2 μm, a thickness of each lithium niobate extension surface is 0.1 μm, and a width of the lithium niobate central ridge is 0.3 μm. The metal oxide layer is made of aluminum oxide.

Embodiment 2

[0038] As shown in FIG. 2, the disclosure provides a lithium niobate waveguide having weak phase drift. The lithium niobate waveguide having weak phase drift includes a lithium niobate layer and a metal electrode. The lithium niobate layer includes a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge. A metal oxide layer is disposed on an upper surface of the lithium niobate central ridge. Metal oxide layers 2 are disposed on upper surfaces of the lithium niobate extension surfaces. The substrate layer 4 is located on a lower surface of the lithium niobate layer. The substrate layer is made of a silicon material. The metal electrode 3 is connected to the upper surfaces of the metal oxide layers 2. A thickness of the lithium niobate central ridge is 1.2 μm, a thickness of each lithium niobate extension surface is 0.6 μm, and a width of the lithium niobate central ridge is 1.5 μm. The metal oxide layer is made of aluminum oxide or hafnium oxide.

Embodiment 3

[0039] As shown in FIG. 3, the disclosure provides a lithium niobate waveguide having weak phase drift. The lithium niobate waveguide having weak phase drift includes a lithium niobate layer 1, a metal electrode 3 and a substrate layer 4. The lithium niobate layer includes a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge. A metal oxide layer is disposed on an upper surface of the lithium niobate central ridge. The substrate layer 4 is located on a lower surface of the lithium niobate layer. The metal electrode passes through the lithium niobate extension surfaces to be connected to the substrate layer 4. The substrate layer 4 is made of silicon, silicon dioxide, a multilayer material made of silicon and silicon dioxide or a multilayer material made of silicon dioxide, metal, and silicon. A thickness of the lithium niobate central ridge is 3 μm, a thickness of each lithium niobate extension surface is 1 μm, and a width of the lithium niobate central ridge is 3 μm. The metal oxide layer is made of tantalum oxide or zirconium dioxide.

Embodiment 4

[0040] As shown in FIG. 4, the disclosure provides a lithium niobate waveguide having weak phase drift. The lithium niobate waveguide having weak phase drift includes a lithium niobate layer 1, a metal electrode 3, a substrate layer 4 and a covering layer 5. The lithium niobate layer 1 includes a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge. A metal oxide layer is disposed on an upper surface of the lithium niobate central ridge. The substrate layer is located on a lower surface of the lithium niobate layer. The metal electrode 3 is connected to the lithium niobate layer 1. The covering layer 5 is disposed on the upper surface of the metal oxide layer. The substrate layer is made of a silicon dioxide material. The metal electrode is located in the substrate layer 4. A thickness of the lithium niobate central ridge is 0.6 μm, a thickness of each lithium niobate extension surface is 0.5 μm, and a width of the lithium niobate central ridge is 0.8 μm. The metal oxide layer is made of aluminum oxide, hafnium oxide, tantalum oxide, zirconium dioxide or titanium dioxide.

Embodiment 5

[0041] As shown in FIG. 5, the disclosure provides a lithium niobate waveguide having weak phase drift. The lithium niobate waveguide having weak phase drift includes a lithium niobate layer 1, a metal electrode 3, a substrate layer 4 and a covering layer 5. The lithium niobate layer includes a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge. A metal oxide layer is disposed on an upper surface of the lithium niobate central ridge. The metal oxide layers are disposed on upper surfaces of the lithium niobate extension surfaces. The substrate layer 4 is located on a lower surface of the lithium niobate layer 1. The substrate layer is made of a silicon dioxide material. The metal electrode 4 is connected to the metal oxide layers 2. The covering layer 5 is located on the upper surfaces of the metal oxide layers 2. The metal electrode 3 is located in the covering layer 5. A thickness of the lithium niobate central ridge is 0.8 μm, a thickness of each lithium niobate extension surface is 0.5 μm, and a width of the lithium niobate central ridge is 1.2 μm. The metal oxide layer is made of aluminum oxide, hafnium oxide, tantalum oxide, zirconium dioxide or titanium dioxide.

Embodiment 6

[0042] As shown in FIG. 6, the disclosure provides a lithium niobate waveguide having weak phase drift. The lithium niobate waveguide having weak phase drift includes a lithium niobate layer 1, a metal electrode 3, a substrate layer 4 and a covering layer 5. The lithium niobate layer includes a lithium niobate central ridge and lithium niobate extension surfaces extending towards two sides of the lithium niobate central ridge. A metal oxide layer is disposed on an upper surface of the lithium niobate central ridge. The metal oxide layers are disposed on upper surfaces of the lithium niobate extension surfaces. The substrate layer 4 is located on a lower surface of the lithium niobate layer. The metal electrode passes through the lithium niobate extension surfaces to be connected to the substrate layer 4. The covering layer 5 is located on the upper surfaces of the metal oxide layers. The substrate layer 4 is made of a multilayer material made of silicon and silicon dioxide. The metal electrode is located in the substrate layer 4. A thickness of the lithium niobate central ridge is 0.6 μm, a thickness of each lithium niobate extension surface is 0.5 μm, and a width of the lithium niobate central ridge is 0.8 μm. The metal oxide layer is made of aluminum oxide, hafnium oxide, tantalum oxide, zirconium dioxide, titanium dioxide, or the like.

[0043] By covering or partially covering the metal oxide layer, such as aluminum oxide, hafnium oxide, tantalum oxide, zirconium dioxide or titanium dioxide, on a surface of the lithium niobate waveguide to absorb free electrons in a material, the metal electrode may be not only disposed on the surface of the metal oxide layer, but also directly disposed on a surface of the lithium niobate layer or may be disposed on the surface of the silicon dioxide substrate layer by passing through the metal oxide layer and the lithium niobate layer, so that the purpose of inhibiting phase drift can be further achieved. The structure of the lithium niobate waveguide is simple in structure. Compared with other doped structures or other structures, the structure is simple in manufacturing method. In addition, a desirable phase drift inhibition effect is achieved.

[0044] Although the implementations of the disclosure are described with reference to the accompanying drawings, those skilled in the art can make various modifications and variations to the disclosure without departing from the spirit and scope of the disclosure. Thus, such modifications and variations of the disclosure fall within the scope of the appended claims.