Method and assembly for analysing the wavefront effect of an optical system

11426067 · 2022-08-30

Assignee

Inventors

Cpc classification

International classification

Abstract

A method for analyzing the wavefront effect of an optical system includes: illuminating a measurement mask (110, 310) with illumination light, producing an interferogram in a specified plane using a diffraction grating (150) from a wavefront from the illuminated measurement mask and traveling through the optical system; and capturing the interferogram with a detector (170). Different angular distributions of the illumination light incident on the measurement mask are produced via a mirror arrangement of independently settable mirror elements. A plurality of interferograms are captured in a plurality of measurement steps, wherein these measurement steps differ respectively in angular distribution of the illumination light that is incident on the measurement mask. A matching wavefront deviation portion in the measurement results obtained respectively in the measurement steps is ascertained to determine the respective system wavefront deviations of the optical system for the pupil regions illuminated respectively in the individual measurement steps.

Claims

1. A method for analysing the wavefront effect of an optical system, comprising: illuminating a measurement mask with illumination light from an illumination device; producing an interferogram in a specified plane using a diffraction grating from a wavefront coming from the illuminated measurement mask and traveling through the optical system; and capturing the interferogram with a detector; wherein different angular distributions of the illumination light that is incident on the measurement mask are produced by a mirror arrangement of independently settable mirror elements; wherein a plurality of interferograms are captured in a plurality of measurement steps, wherein the measurement steps differ from one another in respective angular distribution of the illumination light that is incident on the measurement mask; and wherein a matching wavefront deviation portion in measurement results obtained respectively in the measurement steps is ascertained to determine respective system wavefront deviations of the optical system for pupil regions illuminated respectively in individual ones of the measurement steps.

2. The method as claimed in claim 1, further comprising: varying a beam direction of the illumination light that is incident on the mirror arrangement over time to at least partially average out speckle patterns.

3. The method as claimed in claim 1, wherein the optical system is a projection lens of a microlithographic projection exposure apparatus.

4. The method as claimed in claim 3, wherein the wavefront effect of the projection lens is ascertained in a targeted fashion for the pupil regions that are illuminated during operation of the projection exposure apparatus.

5. A method for analysing the wavefront effect of an optical system, comprising: illuminating a measurement mask with illumination light from an illumination device; producing an interferogram in a specified plane using a diffraction grating from a wavefront coming from the illuminated measurement mask and traveling through the optical system; and capturing the interferogram with a detector; wherein different angular distributions of the illumination light that is incident on the measurement mask are produced by a mirror arrangement of independently settable mirror elements; wherein the optical system is a projection lens of a microlithographic projection exposure apparatus; and wherein the wavefront effect of the projection lens is ascertained in a targeted fashion by setting the mirror arrangement for pupil regions which are illuminated during operation of the projection exposure apparatus.

6. The method as claimed in claim 5, wherein the optical system is configured to operate at an operating wavelength of less than 30 nm.

7. The method as claimed in claim 6, wherein the optical system is configured to operate at an operating wavelength of less than 15 nm.

8. An arrangement for analysing the wavefront effect of an optical system, comprising: an illumination device, having a field facet mirror with a plurality of field facets and having a pupil facet mirror with a plurality of pupil facets, wherein the field facets are independently adjustable to produce a desired angular distribution of illumination light; a measurement mask on which the illumination light is incident; a diffraction grating, which produces a plurality of interferograms in a specified plane from respective wavefronts, each of which, during the illumination of the measurement mask with the illumination light from the illumination device, comes from the illuminated measurement mask and travels through the optical system for different angular distributions of the illumination light that is incident on the measurement mask; a detector configured to capture the interferograms obtained for the different angular distributions of the illumination light that is incident on the measurement mask; and one or more processors configured to calculate the respective system wavefront deviations of the optical system for pupil regions that are respectively illuminated in individual ones of the measurement steps, from a matching wavefront deviation portion in the captured interferograms; and one or more memories configured to store the respective system wavefront deviations of the optical system.

9. The arrangement as claimed in claim 8, further comprising a device configured to vary a beam direction of the illumination light that is incident on the field facet mirror.

10. The arrangement as claimed in claim 9, wherein the device comprises a diffuser configured to move by rotation and/or by translation.

11. The arrangement as claimed in claim 9, wherein the device comprises a beam direction control unit configured to control the beam direction in a targeted manner.

12. The arrangement as claimed in claim 9, wherein the device is arranged in an intermediate focus located at an entrance of the illumination device.

13. The arrangement as claimed in claim 8, configured for installation into an optical system for microlithography.

14. The arrangement as claimed in claim 13, wherein the optical system for microlithography comprises an optical system of a microlithographic projection exposure apparatus.

15. The arrangement as claimed in claim 8, wherein the optical system is configured for operation at an operating wavelength of less than 30 nm.

16. The arrangement as claimed in claim 15, wherein the optical system is configured for operation at an operating wavelength of less than 15 nm.

17. A microlithographic projection exposure apparatus, designed for operation at an operating wavelength of less than 30 nm, comprising: an illumination device and a projection lens, and including an arrangement configured to measure a wavefront of radiation traveling through the projection lens and a device arranged at a region of intermediate focus at an entrance of the illumination device and configured to vary a beam direction of the radiation during the wavefront measurement.

18. The microlithographic projection exposure apparatus as claimed in claim 17, wherein the illumination device has a field facet mirror with a plurality of field facets (FF.sub.1, FF.sub.2, . . . ) and has a pupil facet mirror with a plurality of pupil facets, wherein the field facets are configured to adjust independently of one another.

19. The arrangement as claimed in claim 17, wherein the device comprises a diffuser configured to move by rotation and/or by translation.

20. The arrangement as claimed in claim 17, wherein the device comprises a beam direction control unit controller configured to control the beam direction in a targeted manner.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) In the figures:

(2) FIGS. 1-2 show schematic illustrations for explaining the setup and functionality of an arrangement according to the invention for analysing the wavefront effect of an optical system in an exemplary embodiment, in which FIG. 1 shows the overall exemplary embodiment and FIG. 2 shows a representative channel for a representative illumination setting;

(3) FIGS. 3A, 3B, 4, and 5A-5D show schematic illustrations for explaining further aspects and embodiments of the invention, in which FIG. 3A highlights lateral displacement of the illumination, FIG. 3B highlights use of a diffuser for the illumination, FIG. 4 shows exemplary intensity distributions, FIG. 5A shows an exemplary illumination setting, FIGS. 5B and 5C show corresponding illumination settings with modified illumination regions, and FIG. 5D shows corresponding shearograms; and

(4) FIG. 6 shows a schematic illustration of an imaging optical unit provided with a representative basic setup of an apparatus for wavefront detection.

DETAILED DESCRIPTION

(5) FIG. 1 shows a merely schematic illustration for explaining setup and functionality of an arrangement according to the invention for analyzing the wavefront effect of an optical system in an embodiment of the invention.

(6) According to FIG. 1, light from a source point 100 of a spatially extensive and incoherent light source is initially incident on a field facet mirror 101 having a plurality of independently settable field facets, wherein, for the sake of simpler illustration, only two field facets FF.sub.1 and FF.sub.2 are shown in FIG. 1. From these field facets FF.sub.1, FF.sub.2, . . . , the light is incident, via a pupil facet mirror 102 (of which, again for the sake of simplicity, only two pupil facets PF.sub.1 and PF.sub.2 are shown), on a measurement mask designated “110.” In a pupil plane PP, which is located downstream in the optical beam path, an intensity distribution 130 is produced in dependence on the angular distribution that is set via the field facets FF.sub.1, FF.sub.2, . . . of the field facet mirror 101. An interferogram, which is designated “180” in FIG. 1 and is captured by way of a detector 170, is produced by a diffraction grating 150, which is located downstream in the optical beam path. In FIG. 1, “120” furthermore symbolizes optical elements between the measurement mask 110 and a pupil plane PP, “140” symbolizes optical elements between the pupil plane PP and the diffraction grating 150, and “160” symbolizes optical elements between the diffraction grating 150 and the detector 170.

(7) As is illustrated merely schematically in FIG. 2, the illumination of a measurement mask 210 at a specific angle α results in a corresponding scattering light cone 215 being produced, which in turn produces a region 230 that is illuminated in the pupil plane PP. In FIG. 2, optical elements between the measurement mask 210 and the pupil plane PP are symbolized by “220.” By producing a multiplicity of such channels, it is possible to realize a desirable angular distribution and a corresponding illumination setting when illuminating the measurement mask 210.

(8) In embodiments, it is also possible, as will be described below, for a suitable device to be used for realizing a—deterministic or random—variation of the beam direction of the light that is incident on the mirror arrangement or enters the optical system, with the aim of averaging out speckle patterns, which occur due to the spatial coherence of the incident light.

(9) FIG. 3A serves to illustrate this approach, wherein components that are analogous or substantially functionally identical in comparison with FIG. 1 are designated by reference numerals increased by “200.” A lateral displacement of the source point 300, indicated in FIG. 3A by the double-headed arrow denoted “P,” results in a lateral displacement of the pupil illumination. Coherent disturbances, which occur in the form of speckle patterns and thus have a random character, change in this case and can be reduced in the measurement result by way of averaging over a plurality of image recordings. The region that is illuminated in the pupil plane PP here migrates as a whole without a change in the relevant information relating to the wavefront deviations occurring.

(10) The aforementioned device for varying the beam direction can be for example a diffuser, which is moved by way of rotation and/or translation and is used in the region of the intermediate focus (IF) (for example a rotating EUV diffusing disk, which can be produced by FIB patterning of a thin SI membrane), as is indicated merely schematically in FIG. 3B. In a further embodiment, it is likewise possible to use a beam direction control unit, as is known from US 2005/0270511 A1, for the targeted or deterministic variation of the beam direction.

(11) As will be explained below, the flexible setting of different illumination settings which is able to be realized in the arrangement according to the invention can also be used for absolute calibration.

(12) In embodiments, a plurality of interferograms can be captured in a plurality of measurement steps, wherein these measurement steps differ from one another in terms of the angular distribution of the illumination light that is incident on the measurement mask 110. FIG. 4 shows exemplary intensity distributions 430a, 430b, 430c, . . . , 430n set in the pupil plane. The invention now proceeds from the assumption that the systematic wavefront error of the measurement arrangement for each of these intensity distributions 430a, 430b, 430c, . . . , 430n matches. The wavefront deviations measured in a (pupil) region i can be represented as:
W.sub.i=S.sup.Isotrop+S.sub.i.sup.Anisotrop+POB.sub.i  (1)

(13) Here:

(14) W.sub.i denotes the wavefront deviations, ascertained from at least two partial interferograms or shearograms, along the pupil region i

(15) S.sup.Isotrop denotes the illumination-direction-independent portions of the systematic deviations of the measurement arrangement (shearing interferometer deviations);

(16) S.sub.Anisotrop denotes the illumination-direction-dependent portions of the systematic shearing interferometer deviations, effective in the direction of the pupil region i; and

(17) POB.sub.i denotes the system wavefront deviations of the optical system to be inspected (e.g. projection lens) in the pupil region i.

(18) All of the aforementioned variables are indicated along a common coordinate system, e.g. along a Cartesian x-y-coordinate system around the region center.

(19) The system wavefront deviations of the optical system to be inspected (e.g. of a projection lens) are decomposed into a portion that is common to all pupil regions and is obtained mathematically by averaging over all N pupil regions (i=1, . . . N) and the respective remaining differences in the pupil region no. i:
POB.sub.i=POB.sub.i+(ΔPOB).sub.i  (2)
The component that is common to all pupil regions is referred to here and below as “basic portion.” By inserting (2) into (1), the following is obtained:
W.sub.i=S.sup.Isotrop+S.sub.i.sup.Anisotrop+POB.sub.i(ΔPOB).sub.i  (3)
By aggregating by region-independent and region-dependent variables, the following is obtained:
W.sub.i=S.sup.Isotrop+POB.sub.iS.sub.i.sup.Anisotrop+(ΔPOB).sub.i  (4)

(20) The illumination-direction-dependent errors of the measurement arrangement (shearing interferometer error) can be partially avoided by way of concomitant rotation of the shearing interferometer during the pupil region selection. In this case, the shearing interferometer must be rotated as a whole, that is to say including the measurement mask and the detector. In such a procedure:
S.sub.i.sup.Anisotrop(azimuthal angle)=0  (5)
To avoid such concomitant rotation of the shearing interferometer, the anisotropic systematic shearing interferometer errors, that is to say those caused by shading effects, can be modeled by electromagnetic simulation calculations. This also applies when the illumination direction changes relative to the optical axis. Equation (4) can be described as:
W.sub.i−S.sub.i.sup.Anisotrop=S.sup.Isotrop+POB.sub.i+(ΔPOB).sub.i  (6)
wherein in equation (6), the known variables are found on the left and the unknown variables on the right. “Iterative stitching” of the variables, which are located on the left-hand side of equation (6) and are known over the N pupil regions, produces the superposition of the sought-for systematic shearing interferometer errors with the basic portion and the sought-for differences between the system wavefront and the basic portion.

(21) In the last step, the basic portion is considered in more detail, because it disadvantageously superposes the sought-for systematic shearing interferometer errors. To estimate at least one basic portion component, a specific wavefront component of particular interest will be considered along the pupil below, for example a Z9. For such a component, is possible to mathematically calculate the basic portion by pupil partial region formation and averaging over the N partial regions. This basic portion has a specific characteristic over the partial region, that is to say can be considered to be a wavefront. This wavefront is fitted to the result of the aforementioned stitching (“stitching result 1”) and then subtracted, which gives the sought-for systematic, isotropic shearing interferometer errors as absolute values. Hereby, the absolute calibration method for this wavefront component is complete. For other wavefront components that are to be ascertained, an analogous procedure may be used.

(22) In further embodiments of the invention, the system wavefront measurement according to the invention can be performed at the same illumination setting that is also used in the actual microlithography process. In this way, it is possible to take account of the targeted illumination of specific pupil regions that typically takes place in the microlithography process, and the very system wavefront deviations that become effective in the microlithographic exposure can be captured in a targeted fashion. This will be described further below with reference to FIGS. 5A-5D.

(23) FIG. 5A initially shows an exemplary illumination setting, which is used in the microlithography process or should be set in a microlithographic projection exposure apparatus. According to FIG. 5B, a corresponding illumination setting, which substantially corresponds to that from FIG. 5A, but wherein the illumination poles are modified (i.e. “extended” in the shearing direction”) such that the shearograms (FIG. 5D) ultimately obtained during the measurement are located as completely as possible in the regions shown in FIG. 5A, is set in the measurement arrangement according to the invention using the mirror arrangement according to the invention. In other words, the individual illuminated regions in the pupil are extended or expanded such that, after shearing, a sufficiently large overlap region, which coincides with the illumination setting, is present for the respectively sheared wavefronts according to FIG. 5D. For this reason, the illuminated regions in the pupil must, for a measurement at the exposure setting, be widened, viewed in the shearing direction, by the absolute value of the shearing, as is already indicated schematically in FIG. 5C.

(24) FIG. 6 shows in merely a schematic illustration the possible fundamental setup of an apparatus for wavefront detection.

(25) In FIG. 6, an imaging optical unit that is to be checked with respect to its wavefront effect is denoted “601.” This can also in particular be a projection lens or any desired partial system of an illumination device or of a projection lens of a microlithographic projection exposure apparatus. For checking the wavefront effect of said imaging optical unit 601 or for analyzing the wavefront of a light wave passing through said imaging optical unit 601, the arrangement in accordance with FIG. 1 has an illumination mask 600, through which light from a light source (not illustrated) enters the imaging optical unit 601 and is incident on a diffraction grating 602, arranged downstream of the imaging optical unit 601 in the light propagation direction (z-direction in the coordinate system shown), which diffraction grating 602 is provided on a substrate that is sufficiently transparent for light of the operating wavelength and is designated “620a.” The light diffracted at the grating structure of the diffraction grating 602 into different orders of diffraction (e.g. 0, +1st and −1st order of diffraction) produces, in a (capturing) plane arranged downstream of the diffraction grating 602 with respect to the light propagation direction, an interference pattern, the evaluation of which in the case of a resolution by a camera-based sensor 603 in principle makes possible a wavefront analysis and thus allows a conclusion to be drawn relating to the optical effect or wavefront effect of the imaging optical unit 601 and for example an alignment of the optical components located in the imaging optical unit 601.

(26) Even though the invention has been described on the basis of specific embodiments, numerous variations and alternative embodiments will be apparent to the person skilled in the art, for example through combination and/or exchange of features of individual embodiments. Accordingly, such variations and alternative embodiments are concomitantly encompassed by the present invention, and the scope of the invention is restricted only within the meaning of the appended patent claims and the equivalents thereof.