Radiative cooling device

Abstract

Provided is a radiative cooling device that provides coloration of the radiative surface while maximally avoiding reduction in its radiative cooling performance due to absorption of solar light. An infrared radiative layer for radiating infrared light from a radiative surface and a light reflective layer disposed on the side opposite to the presence side of the radiative surface of the infrared radiative layer are provided in a mutually stacked state. The light reflective layer is arranged such that a first metal layer made of silver or silver alloy and having a thickness equal to or greater than 10 nm and equal to or less than 100 nm, a transparent dielectric layer and a second metal layer reflecting light transmitted through the first metal layer and the transparent dielectric layer are stacked in this order on the side closer to the infrared radiative layer. The transparent dielectric layer has a thickness that causes a resonance wavelength of the light reflective layer to be a wavelength included in wavelengths equal to or greater than 400 nm and equal to or less than 800 nm.

Claims

1. A radiative cooling device configured such that an infrared radiative layer for radiating infrared light from a radiative surface and a light reflective layer disposed on the side opposite to the presence side of the radiative surface of the infrared radiative layer are provided in a mutually stacked state: wherein the light reflective layer is arranged such that a first metal layer made of silver or silver alloy and having a thickness equal to or greater than 10 nm and equal to or less than 100 nm, a transparent dielectric layer and a second metal layer for reflecting light transmitted through the first metal layer and the transparent dielectric layer are stacked in this order on the side closer to the infrared radiative layer; wherein the transparent dielectric layer has a thickness that causes a resonance wavelength of the light reflective layer to be a wavelength included in wavelengths equal to or greater than 400 nm and equal to or less than 800 nm; and wherein the second metal layer comprises a first layer formed of silver or silver alloy and a second layer formed of aluminum or aluminum alloy stacked and disposed in this order to the side closer to the transparent dielectric layer.

2. The radiative cooling device of claim 1, wherein the second metal layer is formed of silver or silver alloy having a thickness equal to or greater than 100 nm.

3. The radiative cooling device of claim 1, wherein the second metal layer is formed of aluminum or aluminum alloy having a thickness equal to or greater than 30 nm.

4. The radiative cooling device of claim 1, wherein the transparent dielectric layer comprises a transparent nitride membrane.

5. The radiative cooling device of claim 1, wherein the transparent dielectric layer comprises a transparent oxide layer.

6. The radiative cooling device of claim 1, wherein the infrared radiative layer comprises glass selected from the group consisting of alkali free glass, crown glass and borosilicate glass.

7. The radiative cooling device of claim 1, wherein the infrared radiative layer is used as a substrate, on which the first metal layer, the transparent dielectric layer and the second metal layer are stacked.

8. The radiative cooling device of claim 7, wherein a gapless contact layer is stacked between the infrared radiative layer and the first metal layer.

9. The radiative cooling device of claim 7, wherein on the side of the second metal layer opposite to the presence side of the transparent dielectric layer, an anti-oxidization layer is stacked.

10. The radiative cooling device of claim 1, wherein the radiative surface of the infrared radiative layer has unevenness for light diffusion.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a view showing a basic arrangement of a radiative cooling device,

(2) FIG. 2 is a view showing a specific arrangement of the radiative cooling device according to an embodiment,

(3) FIG. 3 is a view showing a first arrangement of the radiative cooling device,

(4) FIG. 4 is a graph showing reflectance and absorbance of the radiative cooling device of the first arrangement,

(5) FIG. 5 is a view showing a second arrangement of the radiative cooling device,

(6) FIG. 6 is a graph showing reflectance and absorbance of the radiative cooling device of the second arrangement,

(7) FIG. 7 is a view showing a third arrangement of the radiative cooling device,

(8) FIG. 8 is a graph showing reflectance and absorbance of the radiative cooling device of the third arrangement,

(9) FIG. 9 is a view showing a fourth arrangement of the radiative cooling device,

(10) FIG. 10 is a graph showing reflectance and absorbance of the radiative cooling device of the fourth arrangement,

(11) FIG. 11 is a graph showing reflectance of the radiative cooling device of the fourth arrangement and a conventional radiative cooling device,

(12) FIG. 12 is a graph showing cooling capacities of the radiative cooling devices of the first through fourth arrangements and the conventional radiative cooling device,

(13) FIG. 13 is a view showing a fifth arrangement of the radiative cooling device,

(14) FIG. 14 is a graph showing reflectance and absorbance of the radiative cooling device of the fifth arrangement,

(15) FIG. 15 is a view showing a sixth arrangement of the radiative cooling device,

(16) FIG. 16 is a graph showing reflectance and absorbance of the radiative cooling device of the sixth arrangement,

(17) FIG. 17 is a view showing a radiative cooling device having a comparison arrangement,

(18) FIG. 18 is a table showing relations between the first through eleventh arrangements of the radiative cooling device and XY chromaticity,

(19) FIG. 19 is a view showing XY chromaticity diagram,

(20) FIG. 20 is a view showing reference relationship between thickness of transparent dielectric layer and resonance wavelength,

(21) FIG. 21 is a view showing relationship between thickness of transparent dielectric layer and resonance wavelength,

(22) FIG. 22 is a view showing relation between membrane thickness of silver and transmittance,

(23) FIG. 23 is a view showing relation between thickness of first metal layer and reflectance of light reflective layer,

(24) FIG. 24 is a view showing relation between thickness of first metal layer and reflectance of light reflective layer,

(25) FIG. 25 is a view showing reflectance of a radiative cooling device of an eighth arrangement,

(26) FIG. 26 is a graph showing intensity of solar light energy,

(27) FIG. 27 is a table showing relation between resonance wavelength and colors provided for coloration,

(28) FIG. 28 is a graph showing reflectance when the resonance wavelength is 800 nm,

(29) FIG. 29 is a graph showing reflectance when the metal constituting the second metal layer is changed,

(30) FIG. 30 is a graph showing reflectance when the second metal layer is constituted of gold and copper,

(31) FIG. 31 is a graph showing absorbance of silver and aluminum, and

(32) FIG. 32 is a view showing a radiative cooling device of a further embodiment.

EMBODIMENTS

(33) Next, an embodiment of the present invention will be explained with reference to the accompanying drawings.

(34) [Basic Arrangement of Radiative Cooling Device]

(35) As shown in FIG. 1, a basic arrangement of a radiative cooling device CP is an arrangement in which an infrared radiative layer A for radiating infrared light (infrared radiation) IR from a radiative surface H thereof and a light reflective layer B disposed on the side opposite to the presence side of the radiative surface H of the infrared radiative layer A are disposed in a mutually stacked state.

(36) The light reflective layer B is configured such that a first metal layer B1, a transparent dielectric layer B2 and a second metal layer B3 are stacked, with the first metal layer B1, the transparent dielectric layer B2 and the second metal layer B3 for reflecting light transmitted through the first metal layer B1 and the transparent dielectric layer B2 being positioned in this order on the side closer to the infrared radiative layer A.

(37) And, the thickness of the transparent dielectric layer B2 is set to a thickness (equal to or greater than 30 nm and equal to or less than 230 nm) for rendering the resonance wavelength of the light reflective layer B to a wavelength included in the wavelengths equal to or greater than 400 nm and equal to or less than 800 nm.

(38) Advantageously, the infrared radiative layer A is formed of such material that provides high transmittance (e.g. equal to or greater than 95%) for the wavelength range (see FIG. 26) equal to or greater than 400 nm and equal to or less than 800 nm where the intensity of the solar light energy is high and generates large heat radiation in the wavelength range equal to or greater than 8 μm and equal to or less than 14 μm.

(39) As a specific example thereof, glass (white plate glass) of any one of alkali free glass, crown glass and borosilicate glass can be cited. As other examples, resins such as olefin resin, PET-based resin, fluorine-based resin, silicone-based resin, acryl-based resin, vinyl chloride-based resin, vinylidene chloride-based resin, etc. can be cited.

(40) Incidentally, as alkali free glass, it is possible to employ e.g. OA10G (manufactured by Nippon Electric Glass Co., Ltd.). As crown glass, it is possible to employ e.g. B270 (registered trademark, same as below). As borosilicate glass, it is possible to employ e.g. TEMPAX (registered trademark, same as below).

(41) In the following description, explanation will be made on a premise of the infrared radiative layer A being formed of “TEMPAX”.

(42) Incidentally, thickness of TEMPAX constituting the infrared radiative layer A needs to be equal to or greater than 10 μm and equal to or less than 10 cm, preferably equal to or greater than 20 μm and equal to or less than 10 cm, more preferably, equal to or greater than 100 μm and equal to or less than 1 cm.

(43) Namely, by configuring the infrared radiative layer A to exhibit high heat emissivity in the infrared range having wavelength equal to or greater than 8 μm and equal to or less than 14 μm, which heat emissivity is greater than those of AM1.5G solar light and the atmosphere which are absorbed by the infrared radiative layer A and the light reflective layer B respectively, it is possible to configure a radiative cooling device CP capable of achieving radiative heat cooling function providing temperature reduction relative to the surrounding atmosphere day and night.

(44) And, to the above-described end, in case the infrared radiative layer A is formed of TEMPAX, its thickness needs to be equal to or greater than 10 μm and equal to or less than 10 cm, preferably equal to or greater than 20 μm and equal to or less than 10 cm, even more preferably equal to or greater than 100 μm and equal to or less than 1 cm.

(45) In the instant embodiment, it is assumed that the thickness of TEMPAX is 1 mm.

(46) The first metal layer B1 is formed of silver or silver alloy having a thickness within the range equal to or greater than 10 nm and equal to or less than 100 nm.

(47) As the “silver alloy”, it is possible to employ an alloy made of silver added with any one or more of copper, palladium, gold, zinc, tin, magnesium, nickel, titanium by a ratio from 0.4 to 4.5 mass % approximately. As a specific example, it is possible to employ “APC-TR” (manufactured by Furuya Metal Co., Ltd.), which is a silver alloy prepared by adding copper and palladium to silver.

(48) Incidentally, in the following description, explanation will be made on a premise of using silver to constitute the first metal layer B1.

(49) By the way, FIG. 3, FIG. 5, FIG. 7, FIG. 9, FIG. 13 and FIG. 15 show specific examples (specific arrangements) of the radiative cooling device CP. In all of these specific examples, the thickness of the first metal layer B1 is 35 nm.

(50) Incidentally, in the following description, the specific examples (specific arrangements) of the radiative cooling device CP shown in FIG. 3, FIG. 5, FIG. 7, FIG. 9, FIG. 13 and FIG. 15 will be referred to as the first through sixth arrangements, respectively.

(51) Further, with the silver of the first metal layer B1, as shown in FIG. 22, the transmittance thereof changes with change of its thickness. As a result, as shown in FIG. 23 and FIG. 24, in correspondence with the change of the thickness of the silver of the first metal layer B1, the reflectance of the radiative cooling device CP (light reflective layer B) changes. The details of this will be described later.

(52) As the second metal layer B3, as shown in the first through fourth arrangements, there are cases of constituting it of silver or silver alloy (see FIG. 3, FIG. 5, FIG. 7, FIG. 9), cases of constituting it of aluminum or aluminum alloy (see FIG. 13) as shown in the fifth arrangement, and, as shown in the sixth arrangements, a case (see FIG. 15) in which a first layer b1 and a second layer b2 are stacked, with the first layer b1 formed of silver or silver alloy and the second layer b2 formed of aluminum or aluminum alloy being disposed in this order to the side closer to the transparent dielectric layer B2. And, there are other cases not shown in which it is constituted of using copper or gold.

(53) In the case of constituting the second metal layer B3 of silver or silver alloy, the thickness thereof is preferably equal to or greater than 80 nm, more preferably, equal to or greater than 100 nm.

(54) In the case of constituting the second metal layer B3 of aluminum or aluminum alloy, the thickness thereof is preferably equal to or greater than 30 nm, more preferably, equal to or greater than 50 nm.

(55) In the case of constituting the second metal layer B3 of copper, the thickness thereof is preferably equal to or greater than 80 nm, more preferably, equal to or greater than 100 nm.

(56) In the case of constituting the second metal layer B3 of gold, the arrangement may be similar to that of copper.

(57) In the case of constituting the second metal layer B3 of the first layer b1 and the second layer b2 stacked on each other, by setting the thickness (membrane thickness) of the first layer b1 greater than 2 nm and setting the thickness (membrane thickness) of the second layer b2 equal to or greater than 30 nm and also setting the entire (combined) thickness to about 60 nm, it is possible to provide substantially same optical property as the case of constituting the second metal layer B3 entirely of silver or silver alloy in the thickness of 100 nm approximately.

(58) Incidentally, FIG. 15 illustrates a case in which the first layer b1 is silver having thickness of 10 nm and the second layer b2 is aluminum having thickness of 60 nm.

(59) By the way, as shown in the sixth arrangement, in the case which the second metal layer B3 is constituted of a first layer b1 formed of silver or silver alloy and a second layer b2 formed of aluminum or aluminum alloy, through not shown, advantageously, a transparent nitride membrane or a transparent oxide membrane similar to the transparent dielectric layer B2 may be stuck, as a transparent anti-alloying layer, between the first layer b1 and the second layer b2.

(60) As the “aluminum alloy”, it is possible to employ an alloy made of aluminum added with any one or more of copper, manganese, silicon, magnesium, zinc, carbon steel for machine structure, yttrium, lanthanum, gadolinium, terbium.

(61) The transparent dielectric layer B2 is constituted as a transparent nitride membrane or a transparent oxide membrane.

(62) As examples of the transparent nitride membrane, Si.sub.3N.sub.4, AlN can be cited.

(63) As examples of the transparent oxide membrane, many kinds of oxides can be cited, but Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, ZrO.sub.2, HfO.sub.2, Nb.sub.2O.sub.5, Ta.sub.2O.sub.5, and other oxides which can be readily formed into membrane by such technique as vapor deposition or sputtering can be cited. The details of this will be described later.

(64) Incidentally, in the first through sixth arrangements, explanation will be made on a premise of the transparent dielectric layer B2 being constituted of a transparent nitride layer (Si.sub.3N.sub.4).

(65) Further, the thickness of the transparent dielectric layer B2 is a thickness that sets the resonance wavelength of the light reflective layer B to a wavelength included in the wavelengths equal to or greater than 400 nm and equal to or less than 800 nm, in order to obtain a colored condition of the radiative surface H, namely, a colored condition of the radiative cooling device CP when viewed from the presence side of the radiative surface H of the infrared radiative layer A. The details of this will be described later.

(66) By the way, in case the second metal layer B3 is constituted of aluminum or aluminum alloy, the transparent dielectric layer B2 acts also as a transparent anti-alloying layer for preventing alloying between silver or silver alloy of the first metal layer B1 and aluminum or aluminum alloy of the second metal layer B3.

(67) [Specific Arrangement of Radiative Cooling Device]

(68) The radiative cooling device CP is constituted by stacking the first metal layer B1, the transparent dielectric layer B2 and the second metal layer B3 on the infrared radiative layer A as a “substrate”. Its specific arrangement, as shown in FIG. 2, is an arrangement in which a gapless contact layer 3 is stacked between the infrared radiative layer A as the substrate and the first metal layer B1 and on the side of the second metal layer B3 opposite to the presence side of the transparent dielectric layer B2, an anti-oxidization layer 4 is stuck.

(69) Namely, the radiant cooling device CP is configured by stacking the gapless contact layer 3, the first metal layer B1, the transparent dielectric layer B2, the second metal layer B3 and the anti-oxidization layer 4 are formed into membranes by e.g. the sputtering technique and stuck one after another on the infrared radiative layer A serving as the substrate.

(70) The gapless contact layer 3 is configured as a membrane of aluminum oxide (Al.sub.2O.sub.3) in thickness equal to or greater than 1 nm and equal to or less than 100 nm.

(71) The anti-oxidization layer 4 is configured as a membrane of silicon dioxide (SiO.sub.2) or aluminum oxide (Al.sub.2O.sub.3) in thickness equal or greater than 1 nm and equal or less than several or few 100 nm's. Incidentally, the first through sixth arrangements will be explained on a premise of a membrane of silicon dioxide (SiO.sub.2) being formed.

(72) Accordingly, the radiative cooling device CP is configured such that a portion of light of light L incident on this radiative cooling device CP is reflected by the radiative surface H of the infrared radiative layer A, a portion of light (e.g. visible light, ultraviolet light, etc.) transmitted through the infrared radiative layer A of the light L incident on the radiative cooling device CP is reflected by the first metal layer B1 of the light reflective layer B and light transmitted through this first metal layer B1 is reflected by the second metal layer B3 of the light reflective layer B.

(73) And, the heat input to the radiative cooling device CP from a cooling target D positioned on the side of the anti-oxidization layer 4 opposite to the presence side of the light reflective layer B (e.g. heat input due to heat conduction from the cooling target D) is converted into infrared light (radiation) IR by the infrared radiative layer A to be radiated as such, thereby to cool the cooling target D.

(74) Incidentally, in the instant embodiment, the term “light” L means electromagnetic waves having wavelengths ranging from 10 nm to 20000 nm. Namely, the light L is inclusive of ultraviolet light, infrared light (radiation) IR and the visible light.

(75) Also, in the radiative cooling device CP of the present invention, since the thickness of the transparent dielectric layer B2 is set to such thickness that renders the resonance wavelength of the light reflective layer B to a wavelength included in the wavelengths equal to or greater than 400 nm and equal to or less than 800 nm, there is provided a colored condition of the radiative surface H, namely, a colored condition when the radiative cooling device CP is viewed from the presence side of the radiative surface H of the infrared radiative layer A.

(76) The relationship between the resonance wavelength and the color provided for coloring is as shown in FIG. 27. For instance, when the resonance wavelength is 400 nm, pale yellow color is provided. When the resonance wavelength is 600 nm, pale blue color is provided. When the resonance wavelength is equal or greater than 700 nm and equal to or less than 750 nm, white color is provided.

(77) Incidentally, in the case of the resonance wavelength being 800 nm, as shown in FIG. 28, a wavelength of 400 nm which is the half wavelength of 800 nm, becomes a resonance wavelength also, thus, pale yellow color is provided like the case of the resonance wavelength being 400 nm.

(78) Incidentally, the “pale yellow” shown in the table of FIG. 27 may be referred to as “light yellow” and the “pale blue” may be referred to as “light blue” in the following discussion.

(79) [Relation Between Thickness of First Metal Layer and Transmittance]

(80) As shown in FIG. 22, when the thickness (membrane thickness) of silver of the first metal layer B1 is reduced stepwise from 100 nm, the transmittance of silver increases significantly when the thickness falls below 10 nm.

(81) The radiative cooling device CP of the present invention is configured such that light of the resonance frequency (resonance wavelength) is resonated within the transparent dielectric layer B2, thus causing color development.

(82) More particularly, when it is said that the light of the resonance frequency (resonance wavelength) is resonated within the light reflective layer B, this means that the light of the resonance frequency (resonance wavelength) is reflected back and forth many times in repetition between the first metal layer B1 and the second metal layer B3 which form like a coupled mirror device, namely, by containing this light as much as possible for a long period of time within the transparent dielectric layer B2, so that only the light of the narrow band range including the light of the resonance frequency (wavelength) may be absorbed pinpointedly by the first metal layer B1 and the second metal layer B2, as a result of which the color is developed.

(83) Therefore, if the thickness (membrane thickness) of the silver of the first metal layer B1 is too large, most of the light will be reflected by the silver of the first metal layer B1, thus hardly any light being transmitted to reach the transparent dielectric layer B2, thus unable to cause “resonance” which is important for the optical control.

(84) Conversely, if the thickness (membrane thickness) of the silver of the first metal layer B1 is too small, the transmittance of silver becomes too high to contain the light sufficiently for the light to be absorbed by the metal (resonation), so that the light absorbance will decrease. Further, with weakening of the resonance effect, the broadening of the wavelength range (absorption peak) absorbed by the metal will tend to occur.

(85) Namely, the thickness (membrane thickness) of silver of the first metal layer B1 should not be too great or too small, in order to cause the light reflective layer B to have a high reflectance in the range of the solar light spectrum and also have a steep absorption peak for coloration.

(86) That is, as the thickness (membrane thickness) of silver of the first metal layer B1, there is needed such thickness (membrane thickness) having ability to contain the light therein (with a certain level of reflectance) and that also ability to introduce (transmit) the light to the place reserved for such containment/retention of light (within the transparent dielectric layer B2), in an appropriate balance therebetween.

(87) [Relation Between Thickness of First Metal Layer and Reflectance]

(88) FIG. 23 shows changes occurring in the reflectance of the radiative cooling device CP when the thickness of the first metal layer B1 was changed in the range equal to or greater than 40 nm and equal to or less than 100 nm, in the case of setting the thickness (membrane thickness) of TEMPAX constituting the infrared radiative layer A to 1 mm, setting the thickness (membrane thickness) of Si.sub.3N.sub.4 constituting the transparent dielectric layer B2 to 100 nm and setting the thickness (membrane thickness) of silver constituting the second metal layer B3 to 100 nm.

(89) Similarly, FIG. 24 shows changes occurring in the reflectance of the radiative cooling device CP when the thickness of the first metal layer B1 was changed in the range equal to or greater than 1 nm and equal to or less than 40 nm, in the case of setting the thickness (membrane thickness) of TEMPAX constituting the infrared radiative layer A to 1 mm, setting the thickness (membrane thickness) of Si.sub.3N.sub.4 constituting the transparent dielectric layer B2 to 100 nm and setting the thickness (membrane thickness) of silver constituting the second metal layer B3 to 100 nm.

(90) As shown in FIG. 23, when the thickness (membrane thickness) of silver of the first metal layer B1 is progressively decreased from 100 nm toward 40 nm, in association with increase of the transmittance of silver of the first metal layer B1, increasing amount of light will enter the transparent dielectric layer B2, so that an increasing amount of the light of the resonance wavelength will be absorbed.

(91) Further, as shown in FIG. 24, when the thickness (membrane thickness) of silver of the first metal layer B1 is decreased from 40 nm toward 10 nm, the reflectance of silver of the first metal layer B1 decreases correspondingly. As a result, the effect of containing/retaining light within the transparent dielectric layer B2 (resonance) weakens and the absorption peak becomes smaller, and moreover, this absorption peak broadens.

(92) Further, in comparison between the two illustrations, it may be understood that when the peak of resonance (resonance wavelength) is to be formed in the vicinity of 600 nm, it is appropriate to set the thickness (membrane thickness) of silver of the first metal layer B1 to 40 nm approximately.

(93) That is, as shown in FIG. 22, as the transmittance of silver varies with the wavelength, depending on the wavelength to be resonated, the suitable thickness (membrane thickness) of the silver will change accordingly.

(94) However, in order to provide a coloration condition of the radiative surface H of the radiative cooling device CP, the wavelength to be resonated is the range of visible light (equal to or greater than 400 nm and equal to or less than 800 nm). And, the thickness (membrane thickness) of silver of the first metal layer B1 suitable for controlling in this wavelength range will be confined within the range equal to or greater than 10 nm and equal to or less than 100 nm.

(95) Incidentally, as shown in FIG. 22, if the thickness (membrane thickness) of silver of the first metal layer B1 is set to 100 nm approximately, the wavelength of light transmitted through the first metal layer B1 will become equal to or less than 500 nm. The controllable range of resonance wavelength will vary, depending on the thickness (membrane thickness) of silver of the first metal layer B1, e.g. the controllable resonance wavelength becoming equal to or less than 500 nm.

(96) And, in case the thickness (membrane thickness) of silver of the first metal layer B1 is set to equal to or greater than 25 nm and equal to or less than 80 nm, it becomes possible to control the entire range of wavelength equal to or greater than 400 nm and equal to or less than 800 nm as the resonance wavelength.

(97) [Thickness of Transparent Dielectric Layer]

(98) The thickness (membrane thickness) of the transparent dielectric layer B2 is a thickness that renders the resonance wavelength of the light reflective layer B to a wavelength included in the wavelength range equal to or greater than 400 nm and equal to or less than 800 nm, specifically, a thickness equal to or greater than 30 nm and equal to or less than 230 nm (see FIG. 21).

(99) More particularly, the (surface) plasmon resonance wavelength is determined precisely by refractive index distributions of the first metal layer B1, the transparent dielectric layer B2 and the second metal layer B3. This can be roughly estimated by the following Formula (1).
λ=L*4*n  (1)

(100) where, λ is the resonance wavelength, L is a membrane thickness of the transparent dielectric layer, n is a representative refractive index.

(101) FIG. 20 shows relationship between representative refractive indices (n) of a group of (some) materials usable as the transparent dielectric layer B2, the thickness (membrane thickness) L of the transparent dielectric layer B2 and the resonance wavelength λ.

(102) Incidentally, the reason for the above notation “representative” refractive indices (n) is that the refractive index of material varies with the wavelength. In this illustration, there are shown average refractive indices of the respective materials in the visible light range (equal to or greater than 400 nm and equal to or less than 800 nm).

(103) Further, the resonance wavelength λ shown in FIG. 20 is the resonance wavelength in case only one layer for each layer exists, being different from the resonance wavelength in the case of the transparent dielectric layer B2 being sandwiched between such metals as silver, aluminum, copper, etc. Namely, this value is a value for use as a “reference” in optical designing.

(104) FIG. 21 shows relationship between the thickness (membrane thickness) and the resonance wavelength in case the transparent dielectric layer B2 is bound by silver from opposed sides.

(105) In case the transparent dielectric layer B2 is bound by silver from opposed sides, in comparison with the case of one layer alone shown in FIG. 20, the resonance wavelength λ for a same thickness (membrane thickness) L shifts to the shorter wavelength side. This is a phenomenon which occurs because, due to the presence of metal, the electromagnetic field of the transparent dielectric layer B2 is concentrated around the center of the transparent dielectric layer B2.

(106) The amount of such shift toward the shorter wavelength side will differ depending on the kind of binding metal. However, as shown in FIG. 29, the amount of shift to the shorter wavelength side increases progressively in the order of aluminum, silver and copper.

(107) Namely, FIG. 29 shows the reflectance in case the infrared radiative layer A comprises 1 mm (thickness) TEMPAX, the first metal layer B1 comprises 55 nm silver, the transparent dielectric layer B2 comprises 80 nm aluminum nitride (AlN), the second metal layer B3 comprises 100 nm aluminum, 100 nm silver, and 100 nm copper. As shown, in the order of aluminum, silver and copper, the resonance wavelength λ shifts greater toward the shorter wavelength side.

(108) Incidentally, FIG. 30 shows the reflectance in case the infrared radiative layer A comprises 1 mm (thickness) TEMPAX, the first metal layer B1 comprises 55 nm silver, the transparent dielectric layer B2 comprises 80 nm aluminum nitride (AlN), the second metal layer B3 comprises 100 nm gold and 100 nm copper. As shown, respecting gold and copper, the amounts of shift of the resonance wavelength λ toward the shorter wavelength side are about same.

(109) [Specific Example of Coloration of Radiative Surface]

(110) In the first through fourth arrangements, in case the infrared radiative layer A comprises 1 mm TEMPAX, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 35 nm silver, the transparent dielectric layer B2 comprises silicon nitride (Si.sub.3N.sub.4), the second metal layer B3 comprises 100 nm silver and the anti-oxidization layer 4 comprises 10 nm silicon oxide (SiO.sub.2), conditions of coloration of the radiative surface H in the first to fourth arrangement will be explained.

(111) As shown in FIG. 3, with the first arrangement in which the thickness (membrane thickness) of silicon nitride (Si.sub.3N.sub.4) forming the transparent dielectric layer B2 is set to 100 nm, the condition of coloration of the radiative surface His light blue. As shown in FIG. 5, with the second arrangement in which the thickness (membrane thickness) of silicon nitride (Si.sub.3N.sub.4) forming the transparent dielectric layer B2 is set to 80 nm, the condition of coloration of the radiative surface H is light pink.

(112) Further, as shown in FIG. 7, with the third arrangement in which the thickness (membrane thickness) of silicon nitride (Si.sub.3N.sub.4) forming the transparent dielectric layer B2 is set to 65 nm, the condition of coloration of the radiative surface H is light red. As shown in FIG. 9, with the fourth arrangement in which the thickness (membrane thickness) of silicon nitride (Si.sub.3N.sub.4) forming the transparent dielectric layer B2 is set to 50 nm, the condition of coloration of the radiative surface H is light yellow.

(113) Incidentally, FIG. 4 shows reflectance and absorbance of the first arrangement, FIG. 6 shows reflectance and absorbance of the second arrangement, FIG. 8 shows reflectance and absorbance of the third arrangement, and FIG. 10 shows reflectance and absorbance of the fourth arrangement, respectively.

(114) By the way, FIG. 11 shows reflectance of the fourth arrangement and reflectance of comparison arrangement. In this comparison arrangement, the infrared radiative layer A comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the light reflective layer B comprises 300 nm silver and the anti-oxidization layer 4 comprises 10 nm silicon dioxide (SiO.sub.2).

(115) As shown, the reflectance of the fourth arrangement becomes lower in the range of the resonance wavelength, whereas the reflectance of the comparison arrangement which is a conventional radiative cooling device CP is as high as 95% or higher in the range of the visible light (equal to or greater than 400 nm and equal to or less than 800 nm).

(116) Also, in the fifth arrangement shown in FIG. 13, in which the infrared radiative layer A comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 35 nm silver, the transparent dielectric layer B2 comprises 100 nm silicon nitride (Si.sub.3N.sub.4), the second metal layer B3 comprises 30 nm aluminum, and the anti-oxidization layer 4 comprises 10 nm silicon dioxide (SiO.sub.2), the condition of coloration of the radiative surface H is blue.

(117) Incidentally, FIG. 14 shows reflectance and absorbance of the fifth arrangement.

(118) By the way, as shown in FIG. 31, since aluminum or aluminum alloy has a higher absorbance for the visible light than silver or silver alloy, the condition of coloration of the radiative surface H becomes distinct blue.

(119) Further, in the sixth arrangement shown in FIG. 15, the infrared radiative layer A comprises 1 mm (thickness) TEMPAX, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 35 nm silver, the transparent dielectric layer B2 comprises 100 nm silicon nitride (Si.sub.3N.sub.4), the second metal layer B3 comprises a stacked assembly of a first layer b1 of 10 nm silver and a second layer b2 of 60 nm aluminum and the anti-oxidization layer 4 comprises 10 nm silicon dioxide (SiO.sub.2), the condition of coloration of the radiative surface H becomes blue.

(120) Incidentally, FIG. 16 shows reflectance and absorbance of the sixth arrangement and reflectance and absorbance of the comparison arrangement shown in FIG. 17.

(121) In the comparison arrangement shown in FIG. 17, the infrared radiative layer A comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises aluminum oxide (Al.sub.2O.sub.3) in thickness equal to or greater than 5 nm and equal to or less than 100 nm, the first metal layer B1 comprises 35 nm silver, the transparent dielectric layer B2 comprises 100 nm silicon nitride (Si.sub.3N.sub.4), the second metal layer B3 comprises 10 nm silver.

(122) As shown in FIG. 16, with the comparison arrangement, due to absence of aluminum in the second metal layer B3, there is not much reduction in the reflectance in the range of the resonance wavelength in comparison with the sixth arrangement.

(123) [XY Chromaticity Diagram]

(124) The condition of coloration provided to the radiative surface H can be represented by the XY chromaticity diagram shown in FIG. 19. The table shown in FIG. 18 shows the x axis coordinate values and y axis coordinate values in the XY chromaticity diagram of the first through sixth arrangements.

(125) Incidentally, the illustrated XY chromaticities correspond to D65 light illumination.

(126) For instance, in the first arrangement, the x axis coordinate value is 0.285 and the y axis coordinate value is 0.330, thus being blue in the range near white, that is, light blue (pale blue).

(127) The same is true with the second through sixth arrangements.

(128) Incidentally, the notations: “pink”, “red” and “yellow” shown in the table of FIG. 18 represent “pale pink” (light pink), “pale red” (light red) and “pale yellow” (light yellow), respectively.

(129) By the way, in the table of FIG. 18, in addition to the first through sixth arrangements, there are also shown the XY chromaticity of the seventh through eleventh arrangements.

(130) The seventh arrangement is a case in which the infrared radiative layer comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 30 nm silver, the transparent dielectric layer B2 comprises 90 nm silicon nitride (Si.sub.3N.sub.4) and the second metal layer B3 comprises 30 nm aluminum, which provides light pink color to the coloration condition of the radiative surface H.

(131) The eighth arrangement is a case in which the infrared radiative layer comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 55 nm silver, the transparent dielectric layer B2 comprises 90 nm silicon nitride (Si.sub.3N.sub.4) and the second metal layer B3 comprises 100 nm copper, which provides light blue color (pale blue) to the coloration condition of the radiative surface H.

(132) Incidentally, FIG. 25 shows the reflectance of the eighth arrangement.

(133) The ninth arrangement is a case in which the infrared radiative layer comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 55 nm silver, the transparent dielectric layer B2 comprises 90 nm silicon nitride (Si.sub.3N.sub.4) and the second metal layer B3 comprises 100 nm gold, which provides light blue color (pale blue) to the coloration condition of the radiative surface H.

(134) The tenth arrangement is a case in which the infrared radiative layer comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 35 nm silver, the transparent dielectric layer B2 comprises 100 nm silicon oxide (SiO.sub.2) and the second metal layer B3 comprises 100 nm silver, which provides light yellow color to the coloration condition of the radiative surface H.

(135) The eleventh arrangement is a case in which the infrared radiative layer comprises TEMPAX having 1 mm thickness, the gapless contact layer 3 comprises 5 nm aluminum oxide (Al.sub.2O.sub.3), the first metal layer B1 comprises 35 nm silver, the transparent dielectric layer B2 comprises a stacked assembly of 50 nm silicon nitride (Si.sub.3N.sub.4) and 70 nm silicon oxide (SiO.sub.2), and the second metal layer B3 comprises 100 nm silver, which provides light blue color (pale blue) to the coloration condition of the radiative surface H.

(136) [Cooling Capacity of Radiative Cooling Device]

(137) FIG. 12 shows cooling capacities of the radiative cooling device CP of the first through fourth arrangements and the cooling capacity of the comparison arrangement which is the conventional radiative cooling device which was explained with reference to FIG. 11.

(138) Incidentally, in FIG. 12, the radiative cooling devices CP of the first through fourth arrangements are represented as light blue, light pink, light red and light yellows respectively whereas the conventional radiative cooling device CP is represented as “normal”.

(139) For the illustrated cooling capacities, calculations thereof were made in the atmosphere in average summer time in Osaka at the time of meridian crossing under irradiation of sunshine of AM1.5G at the outside temperature of 30° C.

(140) More particularly, the calculations were made with using a model of late August in which the solar light energy is 1000 W/m.sup.2, the outside temperature is 30° C. and the atmospheric radiant energy is 387 W/m.sup.2.

(141) The temperatures on the horizontal axis represent temperatures of the bottom face portion (bottom face portion opposite to the radiant surface H) of the radiant cooling device CP and the convection is not taken into consideration.

(142) As shown, when the outside temperature and the bottom portion of the radiant cooling device CP are same as both being 30° C., even the colored radiative cooling device CP of the present invention has a radiant cooling capacity near 40 W/m.sup.2.

(143) Namely, although the inventive colored radiative cooling device CP suffers certain reduction in the radiative cooling capacity as compared with the conventional radiative cooling device, yet it can achieve radiative cooling capacity even at the time of meridian passing in summer time.

(144) Incidentally, the radiative cooling capacities of the light pink (second arrangement) and the light red (third arrangement) are substantially same.

(145) [Specific Examples of Transparent Dielectric Layer]

(146) The transparent dielectric layer B2 can be constituted of a transparent nitride membrane or a transparent oxide membrane. As specific examples of the transparent nitride membrane, Si.sub.3N.sub.4 and AlN can be cited as described above.

(147) Further, as specific examples of the transparent oxide membrane, the following can be cited. In the following explanation, the materials usable as the transparent dielectric membrane B2 of the present invention are described under the group classification.

(148) The first group element oxides: Li.sub.2O, Na.sub.2O, K.sub.2O.

(149) The second group element oxides: BeO, MgO, CaO, SrO, BaO.

(150) The fourth group element oxides: TiO.sub.2, ZrO.sub.2, HfO.sub.2.

(151) The fifth group element oxides: Nb.sub.2O.sub.5, Ta.sub.2O.sub.5.

(152) The thirteenth group element oxides: B.sub.2O.sub.3, Al.sub.2O.sub.3, Ga.sub.2O.sub.3.

(153) The fourteenth group element oxides: SiO.sub.2, GeO.sub.2, SnO.sub.2.

(154) Incidentally, as materials to be prepared into membrane by the sputtering technique or the like, there are Al.sub.2O.sub.3, SiO.sub.2, TiO.sub.2, ZrO.sub.2, HfO.sub.2, Nb.sub.2O.sub.5, Ta.sub.2O.sub.5.

(155) These materials are superior to other oxides in that they can be formed into membrane easily.

(156) [Other Embodiments]

(157) Next, other embodiments will be recited on after another.

(158) (1) In the foregoing embodiment, there was disclosed the exemplary case in which the first metal layer B1, the transparent dielectric layer B2 and the second metal layer B3 are stacked on the infrared radiative layer A as a substrate. Alternatively, on a substrate different from the infrared radiative layer A, the second metal layer B3, the transparent dielectric layer B2 and the first metal layer B1 may be stacked to form the light reflective layer B, with the infrared radiative layer A and the light reflective layer B being superposed each other. In this case, a certain gap may be present as long as it is still capable of heat conduction, between the infrared radiative layer A and the light reflective layer B.

(159) (2) In the foregoing embodiment, there was disclosed the exemplary case of the anti-oxidization layer 4 being provided. However, in case e.g. the membrane thickness (thickness) of the second metal layer B3 formed of aluminum is sufficiently large, the anti-oxidization layer 4 may be omitted.

(160) (3) In the foregoing embodiment, detailed explanation was made on the case of forming the first metal layer B1 and the second metal layer B3 of silver. However, the membrane thickness (thickness) in the case of forming the first metal layer B1 and the second metal layer B3 of a silver alloy may be about same as the membrane thickness (thickness) of the case of forming the first metal layer B1 and the second metal layer B3 of silver.

(161) (4) In the foregoing embodiment, detailed explanation was made on the case of forming the second metal layer B3 of aluminum. However, the membrane thickness (thickness) in the case of forming the second metal layer B3 of an aluminum alloy may be about same as the membrane thickness (thickness) of the case of forming the second metal layer B3 of aluminum.

(162) (5) In the foregoing embodiment, there was explained the arrangement in which the radiative surface H of the infrared radiative layer A is formed as a flat surface. However, as shown in FIG. 32, the radiative surface H of the infrared radiative layer A may be formed with unevenness for light diffusion.

(163) Such unevenness for light diffusion can be provided by e.g. embossing work, and in case the infrared radiative layer A is constituted of glass (white glass), such unevenness can be formed by frosted glass work.

(164) Incidentally, FIG. 32 shows such unevenness for light diffusion with exaggeration over the reality.

(165) Incidentally, the arrangements disclosed in the foregoing embodiment (including the other embodiments, same hereinafter) may be used in any combination with the arrangement(s) disclosed in the other embodiments as long as no contradiction results from such combination. Further, the embodiments disclosed in this detailed disclosure are only exemplary, and embodiments of the present invention are not limited thereto, but various changes and modifications will be possible in a range not deviating from the object of the present invention.

DESCRIPTION OF SINGS

(166) 3: gapless contact layer 4: anti-oxidization layer A: infrared radiative layer B: light reflective layer B1: first metal layer B2: transparent dielectric layer B3: second metal layer