Organic electroluminescent materials and devices

Abstract

Aluminum chelate complex compounds with two substituted 8-hydroxyquinoline ligand and one dibenzothiophene, dibenzofuran or dibenzoselenophene ligands or aza-analogs of these molecules, attached directly or through an aromatic spacer to the oxygen atom is provided to improve lifetime, operating voltage and efficiency of an OLED. Additional substitution of dibenzothiophene or dibenzofuran ring may also provide charge delocalization, HOMO modification and higher Tg.

Claims

1. A compound having a structure according to Formula I ##STR00539## wherein M is a group III element; wherein L is selected from the group consisting of ##STR00540## and L is optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof; wherein A contains a group selected from the group consisting of dibenzoselenophene, aza-dibenzofuran, aza-dibenzothiophene, aza-dibenzoselenophene, and combination thereof, which are optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof; wherein R.sup.3 and R.sup.6 each represent mono, di substitutions, or no substitution; wherein R.sup.4 and R.sup.5 each represent mono, di, tri substitutions, or no substitution; and wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are each independently selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof.

2. The compound of claim 1, wherein M is selected from the group consisting of Al, In and Ga.

3. The compound of claim 1, wherein M is Al.

4. The compound of claim 1, wherein L is ##STR00541##

5. The compound of claim 1, wherein A is selected from the group consisting of: ##STR00542## ##STR00543##

6. The compound of claim 1, wherein R.sup.1 and R.sup.2 are each independently selected from the group consisting of hydrogen, deuterium, methyl, ethyl, propyl, iso-propyl, and combinations thereof.

7. The compound of claim 1, wherein M is aluminum; and wherein R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are hydrogen.

8. The compound of claim 7, wherein L is selected from the group consisting of ##STR00544##

9. The compound of claim 7, wherein A is selected from the group consisting of ##STR00545## ##STR00546## ##STR00547##

10. A formulation comprising a compound of claim 1.

11. A first device comprising a first organic light emitting device, further comprising: an anode; a cathode; an organic layer, disposed between the anode and the cathode, comprising a compound having a structure according to Formula I ##STR00548## wherein M is a group III element; wherein L is selected from the group consisting of ##STR00549## and L is optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof; wherein A contains a group selected from the group consisting of dibenzoselenophene, aza-dibenzofuran, aza-dibenzothiophene, aza-dibenzoselenophene, and combination thereof, which are optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof; wherein R.sup.3 and R.sup.6 each represent mono, di substitutions, or no substitution; wherein R.sup.4 and R.sup.5 each represent mono, di, tri substitutions, or no substitution; and wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are each independently selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof.

12. The first device of claim 11, wherein M is selected from the group consisting of Al, In and Ga.

13. The first device of claim 11, wherein M is Al.

14. The first device of claim 11, wherein L is ##STR00550## ##STR00551##

15. The first device of claim 11, wherein A is selected from the group consisting of: ##STR00552## ##STR00553##

16. The first device of claim 11, wherein M in the compound is aluminum; and wherein R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are hydrogen.

17. The first device of claim 11, wherein the organic layer is an emissive layer and the compound having Formula I is a host.

18. The first device of claim 11, wherein R.sup.1 and R.sup.2 are each independently selected from the group consisting of hydrogen, deuterium, methyl, ethyl, propyl, iso-propyl, and combinations thereof.

19. The first device of claim 17, wherein the organic layer further comprises an emissive dopant.

20. The first device of claim 19, wherein the emissive dopant is a transition metal complex having at least one ligand selected from the group consisting of: ##STR00554## ##STR00555## ##STR00556## wherein R.sub.a, R.sub.b, and R.sub.c may represent mono, di, tri or tetra substitutions; R.sub.a, R.sub.b, and R.sub.e are independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and two adjacent substituents of R.sub.a, R.sub.b, and R.sub.c are optionally joined to form a fused ring.

21. The first device of claim 11, wherein the organic layer is a blocking layer and the compound having the Formula I is a blocking material in the organic layer.

22. The first device of claim 11, wherein the organic layer is an electron transporting layer and the compound having the Formula I is an electron transporting material in the organic layer.

23. The first device of claim 11, wherein the first device is a consumer product.

24. The first device of claim 11, wherein the first device is an organic light-emitting device.

25. The first device of claim 11, wherein the first device is a lighting panel.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 shows an organic light emitting device.

(2) FIG. 2 shows an inverted organic light emitting device that does not have a separate electron transport layer.

(3) FIG. 3 shows Formula I as disclosed herein.

DETAILED DESCRIPTION

(4) Generally, an OLED comprises at least one organic layer disposed between and electrically connected to an anode and a cathode. When a current is applied, the anode injects holes and the cathode injects electrons into the organic layer(s). The injected holes and electrons each migrate toward the oppositely charged electrode. When an electron and hole localize on the same molecule, an “exciton,” which is a localized electron-hole pair having an excited energy state, is formed. Light is emitted when the exciton relaxes via a photoemissive mechanism. In some cases, the exciton may be localized on an excimer or an exciplex. Non-radiative mechanisms, such as thermal relaxation, may also occur, but are generally considered undesirable.

(5) The initial OLEDs used emissive molecules that emitted light from their singlet states (“fluorescence”) as disclosed, for example, in U.S. Pat. No. 4,769,292, which is incorporated by reference in its entirety. Fluorescent emission generally occurs in a time frame of less than 10 nanoseconds.

(6) More recently, OLEDs having emissive materials that emit light from triplet states (“phosphorescence”) have been demonstrated. Baldo et al., “Highly Efficient Phosphorescent Emission from Organic Electroluminescent Devices,” Nature, vol. 395, 151-154, 1998; (“Baldo-I”) and Baldo et al., “Very high-efficiency green organic light-emitting devices based on electrophosphorescence,” Appl. Phys. Lett., vol. 75, No. 3, 4-6 (1999) (“Baldo-II”), which are incorporated by reference in their entireties. Phosphorescence is described in more detail in U.S. Pat. No. 7,279,704 at cols. 5-6, which are incorporated by reference.

(7) FIG. 1 shows an organic light emitting device 100. The figures are not necessarily drawn to scale. Device 100 may include a substrate 110, an anode 115, a hole injection layer 120, a hole transport layer 125, an electron blocking layer 130, an emissive layer 135, a hole blocking layer 140, an electron transport layer 145, an electron injection layer 150, a protective layer 155, a cathode 160, and a barrier layer 170. Cathode 160 is a compound cathode having a first conductive layer 162 and a second conductive layer 164. Device 100 may be fabricated by depositing the layers described, in order. The properties and functions of these various layers, as well as example materials, are described in more detail in U.S. Pat. No. 7,279,704 at cols. 6-10, which are incorporated by reference.

(8) More examples for each of these layers are available. For example, a flexible and transparent substrate-anode combination is disclosed in U.S. Pat. No. 5,844,363, which is incorporated by reference in its entirety. An example of a p-doped hole transport layer is m-MTDATA doped with F.sub.4-TCNQ at a molar ratio of 50:1, as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated by reference in its entirety. Examples of emissive and host materials are disclosed in U.S. Pat. No. 6,303,238 to Thompson et al., which is incorporated by reference in its entirety. An example of an n-doped electron transport layer is BPhen doped with Li at a molar ratio of 1:1, as disclosed in U.S. Patent Application Publication No. 2003/0230980, which is incorporated by reference in its entirety. U.S. Pat. Nos. 5,703,436 and 5,707,745, which are incorporated by reference in their entireties, disclose examples of cathodes including compound cathodes having a thin layer of metal such as Mg:Ag with an overlying transparent, electrically-conductive, sputter-deposited ITO layer. The theory and use of blocking layers is described in more detail in U.S. Pat. No. 6,097,147 and U.S. Patent Application Publication No. 2003/0230980, which are incorporated by reference in their entireties. Examples of injection layers are provided in U.S. Patent Application Publication No. 2004/0174116, which is incorporated by reference in its entirety. A description of protective layers may be found in U.S. Patent Application Publication No. 2004/0174116, which is incorporated by reference in its entirety.

(9) FIG. 2 shows an inverted OLED 200. The device includes a substrate 210, a cathode 215, an emissive layer 220, a hole transport layer 225, and an anode 230. Device 200 may be fabricated by depositing the layers described, in order. Because the most common OLED configuration has a cathode disposed over the anode, and device 200 has cathode 215 disposed under anode 230, device 200 may be referred to as an “inverted” OLED. Materials similar to those described with respect to device 100 may be used in the corresponding layers of device 200. FIG. 2 provides one example of how some layers may be omitted from the structure of device 100.

(10) The simple layered structure illustrated in FIGS. 1 and 2 is provided by way of non-limiting example, and it is understood that embodiments of the invention may be used in connection with a wide variety of other structures. The specific materials and structures described are exemplary in nature, and other materials and structures may be used. Functional OLEDs may be achieved by combining the various layers described in different ways, or layers may be omitted entirely, based on design, performance, and cost factors. Other layers not specifically described may also be included. Materials other than those specifically described may be used. Although many of the examples provided herein describe various layers as comprising a single material, it is understood that combinations of materials, such as a mixture of host and dopant, or more generally a mixture, may be used. Also, the layers may have various sublayers. The names given to the various layers herein are not intended to be strictly limiting. For example, in device 200, hole transport layer 225 transports holes and injects holes into emissive layer 220, and may be described as a hole transport layer or a hole injection layer. In one embodiment, an OLED may be described as having an “organic layer” disposed between a cathode and an anode. This organic layer may comprise a single layer, or may further comprise multiple layers of different organic materials as described, for example, with respect to FIGS. 1 and 2.

(11) Structures and materials not specifically described may also be used, such as OLEDs comprised of polymeric materials (PLEDs) such as disclosed in U.S. Pat. No. 5,247,190 to Friend et al., which is incorporated by reference in its entirety. By way of further example, OLEDs having a single organic layer may be used. OLEDs may be stacked, for example as described in U.S. Pat. No. 5,707,745 to Forrest et al, which is incorporated by reference in its entirety. The OLED structure may deviate from the simple layered structure illustrated in FIGS. 1 and 2. For example, the substrate may include an angled reflective surface to improve out-coupling, such as a mesa structure as described in U.S. Pat. No. 6,091,195 to Forrest et al., and/or a pit structure as described in U.S. Pat. No. 5,834,893 to Bulovic et al., which are incorporated by reference in their entireties.

(12) Unless otherwise specified, any of the layers of the various embodiments may be deposited by any suitable method. For the organic layers, preferred methods include thermal evaporation, ink-jet, such as described in U.S. Pat. Nos. 6,013,982 and 6,087,196, which are incorporated by reference in their entireties, organic vapor phase deposition (OVPD), such as described in U.S. Pat. No. 6,337,102 to Forrest et al., which is incorporated by reference in its entirety, and deposition by organic vapor jet printing (OVJP), such as described in U.S. Pat. No. 7,431,968, which is incorporated by reference in its entirety. Other suitable deposition methods include spin coating and other solution based processes. Solution based processes are preferably carried out in nitrogen or an inert atmosphere. For the other layers, preferred methods include thermal evaporation. Preferred patterning methods include deposition through a mask, cold welding such as described in U.S. Pat. Nos. 6,294,398 and 6,468,819, which are incorporated by reference in their entireties, and patterning associated with some of the deposition methods such as ink jet and OVJD. Other methods may also be used. The materials to be deposited may be modified to make them compatible with a particular deposition method. For example, substituents such as alkyl and aryl groups, branched or unbranched, and preferably containing at least 3 carbons, may be used in small molecules to enhance their ability to undergo solution processing. Substituents having 20 carbons or more may be used, and 3-20 carbons is a preferred range. Materials with asymmetric structures may have better solution processibility than those having symmetric structures, because asymmetric materials may have a lower tendency to recrystallize. Dendrimer substituents may be used to enhance the ability of small molecules to undergo solution processing.

(13) Devices fabricated in accordance with embodiments of the present invention may further optionally comprise a barrier layer. One purpose of the barrier layer is to protect the electrodes and organic layers from damaging exposure to harmful species in the environment including moisture, vapor and/or gases, etc. The barrier layer may be deposited over, under or next to a substrate, an electrode, or over any other parts of a device including an edge. The barrier layer may comprise a single layer, or multiple layers. The barrier layer may be formed by various known chemical vapor deposition techniques and may include compositions having a single phase as well as compositions having multiple phases. Any suitable material or combination of materials may be used for the barrier layer. The barrier layer may incorporate an inorganic or an organic compound or both. The preferred barrier layer comprises a mixture of a polymeric material and a non-polymeric material as described in U.S. Pat. No. 7,968,146, PCT Pat. Application Nos. PCT/US2007/023098 and PCT/US2009/042829, which are herein incorporated by reference in their entireties. To be considered a “mixture”, the aforesaid polymeric and non-polymeric materials comprising the barrier layer should be deposited under the same reaction conditions and/or at the same time. The weight ratio of polymeric to non-polymeric material may be in the range of 95:5 to 5:95. The polymeric material and the non-polymeric material may be created from the same precursor material. In one example, the mixture of a polymeric material and a non-polymeric material consists essentially of polymeric silicon and inorganic silicon.

(14) Devices fabricated in accordance with embodiments of the invention may be incorporated into a wide variety of consumer products, including flat panel displays, computer monitors, medical monitors, televisions, billboards, lights for interior or exterior illumination and/or signaling, heads up displays, fully transparent displays, flexible displays, laser printers, telephones, cell phones, personal digital assistants (PDAs), laptop computers, digital cameras, camcorders, viewfinders, micro-displays, 3-D displays, vehicles, a large area wall, theater or stadium screen, or a sign. Various control mechanisms may be used to control devices fabricated in accordance with the present invention, including passive matrix and active matrix. Many of the devices are intended for use in a temperature range comfortable to humans, such as 18 degrees C. to 30 degrees C., and more preferably at room temperature (20-25 degrees C.), but could be used outside this temperature range, for example, from −40 degree C. to +80 degree C.

(15) The materials and structures described herein may have applications in devices other than OLEDs. For example, other optoelectronic devices such as organic solar cells and organic photodetectors may employ the materials and structures. More generally, organic devices, such as organic transistors, may employ the materials and structures.

(16) The terms halo, halogen, alkyl, cycloalkyl, alkenyl, alkynyl, aralkyl, heterocyclic group, aryl, aromatic group, and heteroaryl are known to the art, and are defined in U.S. Pat. No. 7,279,704 at cols. 31-32, which are incorporated herein by reference.

(17) As used herein, “substituted” indicates that a substituent other than H is bonded to the relevant carbon. Thus, where R.sup.2 is monosubstituted, then one R.sup.2 must be other than H. Similarly, where R.sup.3 is disubstituted, then two of R.sup.3 must be other than H. Similarly, where R.sup.2 is unsubstituted R.sup.2 is hydrogen for all available positions.

(18) Al complexes with bidentate ligands like Alq.sub.3 ([tris-(8-hydroxyquinoline)aluminum] are widely used in OLED devices as hosts and ETL materials. In an attempt to improve the property of this material, BAlq, aluminum (III) bis(2-methyl-8-quinolinato-4-phenylphenolate was prepared. This compound demonstrated better properties than parent Alq. Calculations concluded that HOMO and LUMO orbitals of BAlq are mainly localized on 4-phenylphenol and 2-methyl-8-hydroxyquinoline ligands respectively. (See Ta-Ya Chu, et al., “Characterization of electronic structure of aluminum (III) bis(2-methyl-8-quninolinato)-4-pheynylphenolate (BAlq) for phosphorescent organic light emitting devices,” Chem. Physics Lett. 404, (2005), 121-125).

(19) Modification of the phenol ligand is a good way to improve charge-carrying properties of the material. The inventors discovered that introduction in the molecule of hydroxyl-substituted heteroaromatic compound derived from substituted or non-substituted dibenzothiophene (DBT), dibenzofurane (DBF), or their aza-analogs, may be a good way to achieve that goal. Although DBT and DBF are common building blocks in the construction of OLED materials, Al complexes with these types of ligands have not been reported. Our goal was to improve electron-conducting properties of the host material, so the inventors introduced groups which are known to be good electron-carriers.

(20) The “aza” designation in the fragments described above, i.e. aza-dibenzofuran, aza-dibenzonethiophene, etc. means that one or more of the C—H groups in the respective fragment can be replaced by a nitrogen atom, for example, and without any limitation, azatriphenylene encompasses both dibenzo[f,h]quinoxaline and dibenzo[f,h]quinoline. One of ordinary skill in the art can readily envision other nitrogen analogs of the aza-derivatives described above, and all such analogs are intended to be encompassed by the terms as set forth herein.

(21) Another potential benefit of replacing byphenyl ligand by DBT or DBF derivative can be increased glass transition temperature, Tg, an important property of OLED materials. BAlq and it's close analogs are widely used in industry. However, these materials have low Tg; the structure does not permit optimization of charge-carrier properties. Introduction of DBT, DBF fragments or their aza-analogs may tune HOMO level of the molecule and tune-up the charge balance of the device. These tune-up may improve device properties.

(22) The compounds disclosed herein are suitable as hosts in emissive layers, electron transporting materials, or hole blocking materials in OLEDs, particularly for red devices.

(23) According to an embodiment, a compound is provided that has the structure of Formula I shown below

(24) ##STR00003##
wherein M is a group III element; L is a single bond or comprises an aryl or heteroaryl group having from 5-20 carbon atoms, which is optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof; wherein A contains a group selected from the group consisting of dibenzothiophene, dibenzoselenophene, dibenzofuran, aza-dibenzofuran, aza-dibenzothiophene, aza-dibenzoselenophene, and combination thereof, which are optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof; R.sup.3, R.sup.6 each represent mono, di substitutions, or no substitution; R.sup.4, R.sup.5 each represent mono, di, tri substitutions, or no substitution; and wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are each independently selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof.

(25) In one embodiment, R.sup.1 and R.sup.2 are each independently selected from the group consisting of hydrogen, deuterium, methyl, ethyl, propyl, iso-propyl, and combinations thereof.

(26) According to an embodiment, M in Formula I is selected from the group consisting of Al, In and Ga. L in Formula I can be selected from the group consisting of

(27) single bond,

(28) ##STR00004## ##STR00005##

(29) In one embodiment, A in Formula I is selected from the group consisting of:

(30) ##STR00006## ##STR00007##

(31) In one preferred embodiment, the compound of Formula I can be selected from the group consisting of

(32) ##STR00008## ##STR00009## ##STR00010## ##STR00011## ##STR00012##

(33) According to another embodiment, the compound having the structure according to Formula I is selected from the group consisting of Compound 1 through Compound 208 listed in TABLE 1 below, wherein R.sup.1, R.sup.2, L and A are as defined and wherein Me is methyl, H is hydrogen, Et is ethyl, and i-Pr is iso-propyl.

(34) TABLE-US-00001 TABLE 1 Compound number R.sup.1 R.sup.2 L A 1 Me H single bond 2 H H single bond 3 Me Me single bond 4 Me Et single bond 5 Me i-Pr single bond 6 Et i-Pr single bond 7 H i-Pr single bond 8 Me H single bond 0 9 H H single bond 10 Me Me single bond 11 Me Et single bond 12 Me i-Pr single bond 13 Et i-Pr single bond 14 H i-Pr single bond 15 Me H single bond 16 H H single bond 17 Me Me single bond 18 Me Et single bond 0 19 Me i-Pr single bond 20 Et i-Pr single bond 21 H i-Pr single bond 22 Me H single bond 23 H H single bond 24 Me Me single bond 25 Me Et single bond 26 Me i-Pr single bond 27 Et i-Pr single bond 28 H i-Pr single bond 0 29 Me H single bond 30 H H single bond 31 Me Me single bond 32 Me Et single bond 33 Me i-Pr single bond 34 Et i-Pr single bond 35 H i-Pr single bond 36 Me H single bond 37 H H single bond 38 Me Me single bond 0 39 Me Et single bond 40 Me i-Pr single bond 41 Et i-Pr single bond 42 H i-Pr single bond 43 Me H single bond 44 H H single bond 45 Me Me single bond 46 Me i-Pr single bond 47 Et i-Pr single bond 48 H i-Pr single bond 0 49 Me H single bond 50 H H single bond 51 Me Me single bond 52 Me Et single bond 53 Me i-Pr single bond 54 Et i-Pr single bond 55 H i-Pr single bond 56 Me H 57 H H 0 58 Me Me 59 Me Et 60 Me i-Pr 61 Et i-Pr 62 H i-Pr 0 63 Me H 64 H H 65 Me Me 66 Me Et 67 Me i-Pr 0 68 Et i-Pr 69 H i-Pr 70 Me H 71 H H 72 Me Me 00 01 73 Me Et 02 03 74 Me i-Pr 04 05 75 Et i-Pr 06 07 76 H i-Pr 08 09 77 Me H 0 78 H H 79 Me Me 80 Me Et 81 Me i-Pr 82 Et i-Pr 0 83 H i-Pr 84 Me H 85 H H 86 Me Me 87 Me Et 0 88 Me i-Pr 89 Et i-Pr 90 H i-Pr 91 Me H 92 H H 0 93 Me Me 94 Me Et 95 Me i-Pr 96 Et i-Pr 97 H i-Pr 0 98 Me H 99 H H 100 Me Me 101 Me i-Pr 102 Et i-Pr 0 103 H i-Pr 104 Me H 105 H H 106 Me Me 107 Me Et 0 108 Me i-Pr 109 Et i-Pr 110 H i-Pr 111 Me Me single bond 112 Me Me single bond 113 Me Me 0 114 Me Me 115 Me Me single bond 116 Me Me single bond 117 Me Me 118 Me Me 119 Me Me single bond 0 120 Me Me single bond 121 Me Me 122 Me Me 123 Me Me single bond 124 Me Me single bond 125 Me Me 126 Me Me 00 01 127 Me Me single bond 02 128 Me Me single bond 03 129 Me Me 04 05 130 Me Me 06 07 131 Me Me single bond 08 132 Me Me single bond 09 133 Me Me 0 134 Me Me 135 Me Me single bond 136 Me Me single bond 137 Me Me single bond 138 Me Me single bond 139 Me Me single bond 140 Me Me single bond 141 Me Me single bond 0 142 Me Me single bond 143 Me Me single bond 144 Me Me single bond 145 Me Me single bond 146 Me Me 147 Me Me 148 Me Me 0 149 Me Me 150 Me Me 151 Me Me 152 Me Me 153 Me Me 0 154 Me Me 155 Me Me 156 Me Me 157 Me Me single bond 158 Me Me single bond 159 Me Me single bond 160 Me Me single bond 0 161 Me Me single bond 162 Me Me single bond 163 Me Me single bond 164 Me Me single bond 165 Me Me single bond 166 Me Me single bond 167 Me Me single bond 168 Me Me 169 Me Me 0 170 Me Me 171 Me Me 172 Me Me 173 Me Me 174 Me Me 0 175 Me Me 176 Me Me 177 Me Me 178 Me Me 179 Me Me 0 180 Me Me 181 Me Me 182 Me Me 183 Me Me 184 Me Me 0 185 Me Me 186 Me Me 187 Me Me 188 Me Me 189 Me Me 00 01 190 Me Me 02 03 191 Me Me 04 05 192 Me Me 06 07 193 Me Me 08 09 194 Me Me 0 195 Me Me 196 Me Me 197 Me Me 198 Me Me 199 Me Me 0 200 Me Me 201 Me Me single bond 202 Me Me single bond 203 Me Me single bond 204 Me Me single bond 205 Me Me single bond 206 Me Me single bond 207 Me Me single bond 0 208 Me Me single bond

(35) In yet another aspect of the present disclosure, a formulation that includes a compound according to Formula I is described. The formulation can include one or more components selected from the group consisting of a solvent, a host, a hole injection material, hole transport material, an electron transport layer material (see below).

(36) According to another aspect of the present disclosure, a first device is also provided. The first device includes a first organic light emitting device, that includes an anode, a cathode, and an organic layer disposed between the anode and the cathode. The organic layer can be an emissive layer that includes a host and a phosphorescent dopant. The emissive layer can include a compound according to Formula I, and its variations as described herein. In a preferred embodiment, the compound is a host material in the emissive layer. In another embodiment, the compound can be used in an electron transporting layer. The compound is also suitable for use in a hole blocking layer.

(37) In a preferred embodiment, the organic layer comprises a compound having a structure according to Formula I

(38) ##STR00332##
wherein M is a group III element;
wherein L is a single bond or comprises an aryl or heteroaryl group having from 5-20 carbon atoms, which is optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof;
wherein A contains a group selected from the group consisting of dibenzothiophene, dibenzoselenophene, dibenzofuran, aza-dibenzofuran, aza-dibenzothiophene, aza-dibenzoselenophene, and combination thereof, which are optionally further substituted with one or more groups selected from hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof;
wherein R.sup.3, R.sup.6 each represent mono, di substitutions, or no substitution;
wherein R.sup.4, R.sup.5 each represent mono, di, tri substitutions, or no substitution; and
wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are each independently selected from the group consisting of hydrogen, deuterium, alkyl, cycloalkyl, aralkyl, alkoxy, aryloxy, amino, silyl, aryl, heteroaryl, and combinations thereof.

(39) In one embodiment, R.sup.1 and R.sup.2 are each independently selected from the group consisting of hydrogen, deuterium, methyl, ethyl, propyl, iso-propyl, and combinations thereof.

(40) According to another aspect of the first device, M is selected from the group consisting of Al, In, Ga. According to another aspect, M is Al. According to another aspect of the first device, L is selected from the group consisting of:

(41) a single bond,

(42) ##STR00333## ##STR00334##

(43) In another aspect of the first device, A is selected from the group consisting of:

(44) ##STR00335## ##STR00336##

(45) In another embodiment of the first device, the compound is selected from the group consisting of:

(46) ##STR00337## ##STR00338## ##STR00339## ##STR00340## ##STR00341##

(47) In another embodiment of the first device, the compound is selected from the group consisting of Compound 1 through Compound 208 listed in TABLE 1.

(48) In another embodiment of the first device, M in the compound is aluminum; and R.sup.3, R.sup.4, R.sup.5 and R.sup.6 are hydrogen. The organic layer is an emissive layer and the compound having Formula I is a host.

(49) In another embodiment of the first device, the organic layer further comprises an emissive dopant. The emissive dopant can be a transition metal complex having at least one ligand selected from the group consisting of:

(50) ##STR00342## ##STR00343## ##STR00344##
wherein R.sub.a, R.sub.b, and R.sub.c may represent mono, di, tri or tetra substitutions; R.sub.a, R.sub.b, and R.sub.c are independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof; and two adjacent substituents of R.sub.a, R.sub.b, and R.sub.c are optionally joined to form a fused ring.

(51) In one embodiment, the organic layer in the first device can be a blocking layer and the compound having the Formula I is a blocking material in the organic layer. In another embodiment, the organic layer in the first device can be an electron transporting layer and the compound having the Formula I is an electron transporting material in the organic layer.

(52) Combination with Other Materials

(53) The materials described herein as useful for a particular layer in an organic light emitting device may be used in combination with a wide variety of other materials present in the device. For example, emissive dopants disclosed herein may be used in conjunction with a wide variety of hosts, transport layers, blocking layers, injection layers, electrodes and other layers that may be present. The materials described or referred to below are non-limiting examples of materials that may be useful in combination with the compounds disclosed herein, and one of skill in the art can readily consult the literature to identify other materials that may be useful in combination.

(54) HIL/HTL:

(55) A hole injecting/transporting material to be used in the present invention is not particularly limited, and any compound may be used as long as the compound is typically used as a hole injecting/transporting material. Examples of the material include, but not limit to: a phthalocyanine or porphryin derivative; an aromatic amine derivative; an indolocarbazole derivative; a polymer containing fluorohydrocarbon; a polymer with conductivity dopants; a conducting polymer, such as PEDOT/PSS; a self-assembly monomer derived from compounds such as phosphonic acid and sliane derivatives; a metal oxide derivative, such as MoO.sub.x; a p-type semiconducting organic compound, such as 1,4,5,8,9,12-Hexaazatriphenylenehexacarbonitrile; a metal complex, and a cross-linkable compounds.

(56) Examples of aromatic amine derivatives used in HIL or HTL include, but not limit to the following general structures:

(57) ##STR00345##

(58) Each of Ar.sup.1 to Ar.sup.9 is selected from the group consisting aromatic hydrocarbon cyclic compounds such as benzene, biphenyl, triphenyl, triphenylene, naphthalene, anthracene, phenalene, phenanthrene, fluorene, pyrene, chrysene, perylene, azulene; group consisting aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridylindole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuropyridine, furodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine, and selenophenodipyridine; and group consisting 2 to 10 cyclic structural units which are groups of the same type or different types selected from the aromatic hydrocarbon cyclic group and the aromatic heterocyclic group and are bonded to each other directly or via at least one of oxygen atom, nitrogen atom, sulfur atom, silicon atom, phosphorus atom, boron atom, chain structural unit and the aliphatic cyclic group. Wherein each Ar is further substituted by a substituent selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof.

(59) In one aspect, Ar.sup.1 to Ar.sup.9 is independently selected from the group consisting of:

(60) ##STR00346##
wherein k is an integer from 1 to 20; X.sup.101 to X.sup.108 is C (including CH) or N; Z.sup.101 is NAr.sup.1, O, or S; Ar.sup.1 has the same group defined above.

(61) Examples of metal complexes used in HIL or HTL include, but not limit to the following general formula:

(62) ##STR00347##
wherein Met is a metal, which can have an atomic weight greater than 40; (Y.sup.101-Y.sup.102) is a bidentate ligand, Y.sup.101 and Y.sup.102 are independently selected from C, N, O, P, and S; L.sup.101 is an ancillary ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal; and k′+k″ is the maximum number of ligands that may be attached to the metal.

(63) In one aspect, (Y.sup.101-Y.sup.102) is a 2-phenylpyridine derivative. In another aspect, (Y.sup.101-Y.sup.102) is a carbene ligand. In another aspect, Met is selected from Ir, Pt, Os, and Zn. In a further aspect, the metal complex has a smallest oxidation potential in solution vs. Fc.sup.+/Fc couple less than about 0.6 V.

(64) Host:

(65) The light emitting layer of the organic EL device of the present invention preferably contains at least a metal complex as light emitting material, and may contain a host material using the metal complex as a dopant material. Examples of the host material are not particularly limited, and any metal complexes or organic compounds may be used as long as the triplet energy of the host is larger than that of the dopant. While the Table below categorizes host materials as preferred for devices that emit various colors, any host material may be used with any dopant so long as the triplet criteria is satisfied.

(66) Examples of metal complexes used as host are preferred to have the following general formula:

(67) ##STR00348##
wherein Met is a metal; (Y.sup.103-Y.sup.104) is a bidentate ligand, Y.sup.103 and Y.sup.104 are independently selected from C, N, O, P, and S; L.sup.101 is an another ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal; and k′+k″ is the maximum number of ligands that may be attached to the metal.

(68) In one aspect, the metal complexes are:

(69) ##STR00349##
wherein (O—N) is a bidentate ligand, having metal coordinated to atoms O and N.

(70) In another aspect, Met is selected from Ir and Pt.

(71) In a further aspect, (Y.sup.103-Y.sup.104) is a carbene ligand.

(72) Examples of organic compounds used as host are selected from the group consisting aromatic hydrocarbon cyclic compounds such as benzene, biphenyl, triphenyl, triphenylene, naphthalene, anthracene, phenalene, phenanthrene, fluorene, pyrene, chrysene, perylene, azulene; group consisting aromatic heterocyclic compounds such as dibenzothiophene, dibenzofuran, dibenzoselenophene, furan, thiophene, benzofuran, benzothiophene, benzoselenophene, carbazole, indolocarbazole, pyridylindole, pyrrolodipyridine, pyrazole, imidazole, triazole, oxazole, thiazole, oxadiazole, oxatriazole, dioxazole, thiadiazole, pyridine, pyridazine, pyrimidine, pyrazine, triazine, oxazine, oxathiazine, oxadiazine, indole, benzimidazole, indazole, indoxazine, benzoxazole, benzisoxazole, benzothiazole, quinoline, isoquinoline, cinnoline, quinazoline, quinoxaline, naphthyridine, phthalazine, pteridine, xanthene, acridine, phenazine, phenothiazine, phenoxazine, benzofuropyridine, furodipyridine, benzothienopyridine, thienodipyridine, benzoselenophenopyridine, and selenophenodipyridine; and group consisting 2 to 10 cyclic structural units which are groups of the same type or different types selected from the aromatic hydrocarbon cyclic group and the aromatic heterocyclic group and are bonded to each other directly or via at least one of oxygen atom, nitrogen atom, sulfur atom, silicon atom, phosphorus atom, boron atom, chain structural unit and the aliphatic cyclic group. Wherein each group is further substituted by a substituent selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof.

(73) In one aspect, host compound contains at least one of the following groups in the molecule:

(74) ##STR00350## ##STR00351##
wherein R.sup.101 to R.sup.107 is independently selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, when it is aryl or heteroaryl, it has the similar definition as Ar's mentioned above. k is an integer from 0 to 20 or 1 to 20; k′ is an integer from 0 to 20. X.sup.101 to X.sup.108 is selected from C (including CH) or N. Z.sup.101 and Z.sup.102 is selected from NR.sup.101, O, or S.
HBL:

(75) A hole blocking layer (HBL) may be used to reduce the number of holes and/or excitons that leave the emissive layer. The presence of such a blocking layer in a device may result in substantially higher efficiencies as compared to a similar device lacking a blocking layer. Also, a blocking layer may be used to confine emission to a desired region of an OLED.

(76) In one aspect, compound used in HBL contains the same molecule or the same functional groups used as host described above.

(77) In another aspect, compound used in HBL contains at least one of the following groups in the molecule:

(78) ##STR00352##
wherein k is an integer from 1 to 20; L.sup.101 is an another ligand, k′ is an integer from 1 to 3.
ETL:

(79) Electron transport layer (ETL) may include a material capable of transporting electrons. Electron transport layer may be intrinsic (undoped), or doped. Doping may be used to enhance conductivity. Examples of the ETL material are not particularly limited, and any metal complexes or organic compounds may be used as long as they are typically used to transport electrons.

(80) In one aspect, compound used in ETL contains at least one of the following groups in the molecule:

(81) ##STR00353##
wherein R.sup.101 is selected from the group consisting of hydrogen, deuterium, halide, alkyl, cycloalkyl, heteroalkyl, arylalkyl, alkoxy, aryloxy, amino, silyl, alkenyl, cycloalkenyl, heteroalkenyl, alkynyl, aryl, heteroaryl, acyl, carbonyl, carboxylic acids, ester, nitrile, isonitrile, sulfanyl, sulfinyl, sulfonyl, phosphino, and combinations thereof, when it is aryl or heteroaryl, it has the similar definition as Ar's mentioned above. Ar.sup.1 to Ar.sup.a has the similar definition as Ar's mentioned above. k is an integer from 1 to 20. X.sup.101 to X.sup.108 is selected from C (including CH) or N.

(82) In another aspect, the metal complexes used in ETL contains, but not limit to the following general formula:

(83) ##STR00354##
wherein (O—N) or (N—N) is a bidentate ligand, having metal coordinated to atoms O, N or N, N; L.sup.101 is another ligand; k′ is an integer value from 1 to the maximum number of ligands that may be attached to the metal.

(84) In any above-mentioned compounds used in each layer of the OLED device, the hydrogen atoms can be partially or fully deuterated. Thus, any specifically listed substituent, such as, without limitation, methyl, phenyl, pyridyl, etc. encompasses undeuterated, partially deuterated, and fully deuterated versions thereof. Similarly, classes of substituents such as, without limitation, alkyl, aryl, cycloalkyl, heteroaryl, etc. also encompass undeuterated, partially deuterated, and fully deuterated versions thereof.

(85) In addition to and/or in combination with the materials disclosed herein, many hole injection materials, hole transporting materials, host materials, dopant materials, exiton/hole blocking layer materials, electron transporting and electron injecting materials may be used in an OLED. Non-limiting examples of the materials that may be used in an OLED in combination with materials disclosed herein are listed in Table 2 below. Table 1 lists non-limiting classes of materials, non-limiting examples of compounds for each class, and references that disclose the materials.

(86) TABLE-US-00002 TABLE 2 MATERIAL EXAMPLES OF MATERIAL PUBLICATIONS Hole injection materials Phthalocyanine and porphryin compounds Appl. Phys. Lett. 69, 2160 (1996) Starburst triarylamines J. Lumin. 72-74, 985 (1997) CF.sub.x Fluorohydrocarbon polymer Appl. Phys. Lett. 78, 673 (2001) Conducting polymers (e.g., PEDOT:PSS, polyaniline, polypthiophene) Synth. Met. 87, 171 (1997) WO2007002683 Phosphonic acid and sliane SAMs US20030162053 Triarylamine or polythiophene polymers with conductivity dopants 0 EP1725079A1 Organic compounds with conductive inorganic compounds, such as molybdenum and tungsten oxides US20050123751 SID Symposium Digest, 37, 923 (2006) WO2009018009 n-type semiconducting organic complexes US20020158242 Metal organometallic complexes US20060240279 Cross-linkable compounds US20080220265 Polythiophene based polymers and copolymers WO 2011075644 EP2350216 Hole transporting materials Triarylamines (e.g., TPD, α-NPD) Appl. Phys. Lett. 51, 913 (1987) US5061569 EP650955 J. Mater. Chem. 3, 319 (1993) Appl. Phys. Lett. 90, 183503 (2007) Appl. Phys. Lett. 90, 183503 (2007) Triaylamine on spirofluorene core Synth. Met. 91, 209 (1997) Arylamine carbazole compounds 0 Adv. Mater. 6, 677 (1994), US20080124572 Triarylamine with (di)benzothiophene/ (di)benzofuran US20070278938, US20080106190 US20110163302 Indolocarbazoles Synth. Met. 111, 421 (2000) Isoindole compounds Chem. Mater. 15, 3148 (2003) Metal carbene complexes US20080018221 Phosphorescent OLED host materials Red hosts Arylcarbazoles Appl. Phys. Lett. 78, 1622 (2001) Metal 8-hydroxyquinolates (eg., Alq.sub.3, BAlq) Nature 395, 151 (1998) US20060202194 WO2005014551 WO2006072002 Metal phenoxybenzothiazole compounds 0 Appl. Phys. Lett. 90, 123509 (2007) Conjugated oligomers and polymers (e.g., polyfluorene) Org. Electron. 1, 15 (2000) Aromatic fused rings WO2009066779, WO2009066778, WO2009063833, US20090045731, US20090045730, WO2009008311, US20090008605, US20090009065 Zinc complexes WO2010056066 Chrysene based compounds WO2011086863 Green hosts Arylcarbazoles Appl. Phys. Lett. 78, 1622 (2001) US20030175553 WO2001039234 Aryltriphenylene compounds US20060280965 US20060280965 0 WO2009021126 Poly-fused heteroaryl compounds US20090309488 US20090302743 US20100012931 Donor acceptor type molecules WO2008056746 WO2010107244 Aza-carbazole/ DBT/DBF JP2008074939 US20100187984 Polymers (e.g., PVK) Appl. Phys. Lett. 77, 2280 (2000) Spirofluorene compounds WO2004093207 Metal phenoxybenzooxazole compounds WO2005089025 WO2006132173 00 JP200511610 Spirofluorene- carbazole compounds 01 JP2007254297 02 JP2007254297 Indolocabazoles 03 WO2007063796 04 WO2007063754 5-member ring electron deficient heterocycles (e.g., triazole, oxadiazole) 05 J. Appl. Phys. 90, 5048 (2001) 06 WO2004107822 Tetraphenylene complexes 07 US20050112407 Metal phenoxypyridine compounds 08 WO2005030900 Metal coordination complexes (e.g., Zn, Al with N{circumflex over ( )}N ligands) 09 US20040137268, US20040137267 Blue hosts Arylcarbazoles 0 Appl. Phys. Lett, 82, 2422 (2003) US20070190359 Dibenzothiophene/ Dibenzofuran- carbazole compounds WO2006114966, US20090167162 US20090167162 WO2009086028 US20090030202, US20090017330 US20100084966 Silicon aryl compounds US20050238919 WO2009003898 Silicon/Germanium aryl compounds EP2034538A Aryl benzoyl ester 0 WO2006100298 Carbazole linked by non-conjugated groups US20040115476 Aza-carbazoles US20060121308 High triplet metal organometallic complex US7154114 Phosphorescent dopants Red dopants Heavy metal porphyrins (e.g., PtOEP) Nature 395, 151 (1998) Iridium(III) organometallic complexes Appl. Phys. Lett. 78, 1622 (2001) US2006835469 US2006835469 US20060202194 US20060202194 0 US20070087321 US20080261076 US20100090591 US20070087321 Adv. Mater. 19, 739 (2007) WO2009100991 WO2008101842 US7232618 Platinum(II) organometallic complexes WO2003040257 US20070103060 Osminum(III) complexes Chem. Mater. 17, 3532 (2005) Ruthenium(II) complexes 0 Adv. Mater. 17, 1059 (2005) Rhenium (I), (II), and (III) complexes US20050244673 Green dopants Iridium(III) organometallic complexes   and its derivatives Inorg. Chem. 40, 1704 (2001) US20020034656 US7332232 US20090108737 WO2010028151 EP1841834B US20060127696 US20090039776 0 US6921915 US20100244004 US6687266 Chem. Mater. 16, 2480 (2004) US20070190359 US 20060008670 JP2007123392 WO2010086089, WO2011044988 Adv. Mater. 16, 2003 (2004) Angew. Chem. Int. Ed. 2006, 45, 7800 WO2009050290 0 US20090165846 US20080015355 US20010015432 US20100295032 Monomer for polymeric metal organometallic compounds US7250226, US7396598 Pt(II) organometallic complexes, including polydentated ligands Appl. Phys. Lett. 86, 153505 (2005) Appl. Phys. Lett. 86, 153505 (2005) Chem. Lett. 34, 592 (2005) WO2002015645 US20060263635 0 US20060182992 US20070103060 Cu complexes WO2009000673 US20070111026 Gold complexes Chem. Commun. 2906 (2005) Rhenium(III) complexes Inorg. Chem. 42, 1248 (2003) Osmium(II) complexes US7279704 Deuterated organometallic complexes US20030138657 Organometallic complexes with two or more metal centers US20030152802 US7090928 Blue dopants Iridium(III) organometallic complexes WO2002002714 0 WO2006009024 US20060251923 US20110057559 US20110204333 US7393599, WO2006056418, US20050260441, WO2005019373 US7534505 WO2011051404 US7445855 US20070190359, US20080297033 US20100148663 US7338722 US20020134984 Angew. Chem. Int. Ed. 47, 4542 (2008) 0 Chem. Mater. 18, 5119 (2006) Inorg. Chem. 46, 4308 (2007) WO2005123873 WO2005123873 WO2007004380 WO2006082742 Osmium(II) complexes US7279704 Organometallics 23, 3745 (2004) Gold complexes Appl. Phys. Lett.74,1361 (1999) Platinum(II) complexes WO2006098120, WO2006103874 Pt tetradentate complexes with at least one metal- carbene bond 00 US7655323 Exciton/hole blocking layer materials Bathocuprine compounds (e.g., BCP, BPhen) 01 Appl. Phys. Lett. 75, 4 (1999) 02 Appl. Phys. Lett. 79, 449 (2001) Metal 8-hydroxyquinolates (e.g., BAlq) 03 Appl. Phys. Lett. 81, 162 (2002) 5-member ring electron deficient heterocycles such as triazole, oxadiazole, imidazole, benzoimidazole 04 Appl. Phys. Lett. 81, 162 (2002) Triphenylene compounds 05 US20050025993 Fluorinated aromatic compounds 06 Appl. Phys. Lett. 79, 156 (2001) Phenothiazine- S-oxide 07 WO2008132085 Silylated five- membered nitrogen, oxygen, sulfur or phosphorus dibenzoheterocycles 08 WO2010079051 Aza-carbazoles 09 US20060121308 Electron transporting materials Anthracene- benzoimidazole compounds 0 WO2003060956 US20090179554 Aza triphenylene derivatives US20090115316 Anthracene- benzothiazole compounds Appl. Phys. Lett. 89, 063504 (2006) Metal 8-hydroxyquinolates (e.g., Alq.sub.3, Zrq.sub.4) Appl. Phys. Lett. 51, 913 (1987) US7230107 Metal hydroxybenoquinolates Chem. Lett. 5, 905 (1993) Bathocuprine compounds such as BCP, BPhen, etc Appl. Phys. Lett. 91, 263503 (2007) Appl. Phys. Lett. 79, 449 (2001) 5-member ring electron deficient heterocycles (e.g., triazole, oxadiazole, imidazole, benzoimidazole) Appl. Phys. Lett. 74, 865 (1999) Appl. Phys. Lett. 55, 1489 (1989) 0 Jpn. J. Apply. Phys. 32, L917 (1993) Silole compounds Org. Electron. 4, 113 (2003) Arylborane compounds J. Am. Chem. Soc. 120, 9714 (1998) Fluorinated aromatic compounds J. Am. Chem. Soc. 122, 1832 (2000) Fullerene (e.g., C60) US20090101870 Triazine complexes US20040036077 Zn (N{circumflex over ( )}N) complexes US6528187

Experimental—Synthesis of Example Compounds

(87) Synthesis of Compound 3

(88) ##STR00527##

(89) H.sub.2O.sub.2 (30% aqueous solution, 8.96 ml, 88 mmol) was added dropwise to a mixture of dibenzo[b,d]thiophen-4-ylboronic acid (10 g, 43.8 mmol) in ethanol (120 ml) at room temperature. The mixture was stirred at ambient temperature for two hours. Upon evaporation of the ethanol, the reaction product was diluted with water and extracted with EtOAc (4×25 mL). The organic extract was washed with NaHCO.sub.3, dried and evaporated. The product was recrystallized from DCM/AcOEt/Hexane (2/1/7) to give a white solid (4.3 g, 49% yield).

(90) ##STR00528##

(91) 2-Methylquinolin-8-ol (1.590 g, 9.99 mmol) and triisopropoxyaluminum (2.040 g, 9.99 mmol) were dissolved in EtOH (80 ml). The mixture was refluxed for two hours under N.sub.2. The mixture was cooled down. To this mixture was added 2-methylquinolin-8-ol (1.590 g, 9.99 mmol) and dibenzo[b,d]thiophen-4-ol (2.0 g, 9.99 mmol) in 80 mL of EtOH. The mixture was then refluxed under N.sub.2 overnight, then it was cooled down to 50° C., filtered yellow solid, washed with EtOH to afford Compound 3 in the form of a greenish powder (4.3 g, 79% yield).

(92) Synthesis of Compound 31

(93) ##STR00529##

(94) Dibenzo[b,d]furan-4-ylboronic acid (6 g, 28.3 mmol), was dissolved in ethanol (60 ml), added H.sub.2O.sub.2 (30% aqueous solution, 8.67 ml, 85 mmol) and stirred at 60° C. for 2 h. Added 300 mL of water, extracted with EtOAc (3×40 mL), organic fractions were combined, filtered and evaporated. The solid residue was crystallized two times from DCM/hexane, providing dibenzo[b,d]furan-4-ol as colorless needles (3 g, 16.29 mmol, 57.6% yield).

(95) ##STR00530##

(96) 2-Methylquinolin-8-ol (1.800 g, 11.31 mmol) and triisopropoxyaluminum (2.310 g, 11.31 mmol) were dissolved in EtOH (75 ml), refluxed 2 h under N.sub.2. Then added 2-methylquinolin-8-ol (1.800 g, 11.31 mmol) and dibenzo[b,d]furan-4-ol (2.083 g, 11.31 mmol) in 75 mL of EtOH, refluxed overnight, cooled down, filtered yellow solid (4.1 g, 62% yield) of Compound 31.

(97) Synthesis of Compound 86

(98) ##STR00531##

(99) Dibenzo[b,d]furan-4-ylboronic acid (4.00 g, 18.87 mmol) and 1-bromo-4-methoxybenzene (5.29 g, 28.3 mmol) were dissolved in toluene (100 ml). Potassium carbonate (5.22 g, 37.7 mmol) in water (20 ml) was added. The reaction was bubbled with N.sub.2, and Pd(PPh.sub.3).sub.4 (0.436 g, 0.377 mmol) was then added. The reaction was degassed and heated to reflux overnight. The solution was cooled down. The organic layer was separated. The crude product was purified by column chromatography on silica gel, eluted with hexane/DCM 9/1 to 1/1 (v/v) gradient mixture to give a white solid (3.7 g, 72%).

(100) ##STR00532##

(101) 4-(4-Methoxyphenyl)dibenzo[b,d]furan (3.70 g, 13.49 mmol) and pyridinium hydrochloride (15.59 g, 135 mmol) were placed in the round-bottom flask with magnetic stirrer under N.sub.2 atm. The flask was placed in the oil bath at 220° C., cooled down to 120° C., added excess of water, and stirred for 1 h. The resulting product was extracted with ethyl acetate. The organic layer was washed with water several times. The solvent was evaporated. The crude product was purified by column chromatography on silica gel, eluted with hexane/ethyl acetate 1/1 (v/v) to provide of 2-Methylquinolin-8-ol (2.1 g, 60%).

(102) ##STR00533##

(103) 2-Methylquinolin-8-ol (0.734 g, 4.61 mmol) and triisopropoxyaluminum (0.942 g, 4.61 mmol) were suspended in EtOH (10 ml), heated to 100° C. for 2 h. A mixture of 2-methylquinolin-8-ol (0.734 g, 4.61 mmol) and 4-(dibenzo[b,d]furan-4-yl)phenol (1.200 g, 4.61 mmol) in EtOH (10 ml) was added as one portion to the hot reaction mixture, forming slightly cloudy solution. After 30 min of refluxing white solid precipitated. The solution was stirred overnight at 90° C. Compound 86 in yellow solid form was filtered off, washed with hexane and dried (2.3 g, 83%).

(104) Synthesis of Compound 157

(105) ##STR00534##

(106) (2,3-Dimethoxyphenyl)boronic acid (4.33 g, 23.82 mmol) and 3-iodopyridin-2-amine (5.24 g, 23.82 mmol) were suspended in THF (200 ml). Sodium carbonate (5.05 g, 47.6 mmol) in 50 mL of water was added. The reaction was bubbled with N.sub.2 for 30 min. Pd(PPh.sub.3).sub.4 catalyst (0.688 g, 0.595 mmol) was added. The reaction was warmed up to 80° C., stirred overnight under N.sub.2. The mixture was diluted with 80 mL of EtOAc, washed with NaCl saturated solution. The solvent was evaporated and the crude product was purified by column chromatography on silica gel, and eluted with hexane/EtOAc 1/1 (v/v) to provide a product of 3-(2,3-Dimethoxyphenyl)pyridin-2-amine as white solid material (3.8 g, 63% yield).

(107) ##STR00535##

(108) 3-(2,3-Dimethoxyphenyl)pyridin-2-amine (9.37 g, 40.7 mmol) was dissolved in the mixture of AcOH (120 ml) and 20 mL of THF, cooled in the ice bath. tert-Butyl nitrite (8.39 g, 73.2 mmol) in 20 mL of THF was added. The reaction was warmed up to RT. The solvent was evaporated to about half of the volume. The reaction was then diluted with brine, extracted with EtOAc (4×25 mL). The organic fractions were combined, washed with Na2CO3 aq., dried over Na.sub.2SO.sub.4 and evaporated 2/3 of solvent. Yellow crystals formed and the crystals were filtered off and dried. The remaining material was purified by chromatography on silica gel, eluted with hexane/EtOAc 1/1 (v/v), providing yellow solid of 8-Methoxybenzofuro[2,3-b]pyridine. Total yield was 4.2 g, 52%.

(109) ##STR00536##

(110) 8-Methoxybenzofuro[2,3-b]pyridine (5.00 g, 25.10 mmol) and pyridinium hydrochloride (14.50 g, 125 mmol) were immersed in the oil bath at 190° C. The reaction was heated for 5 h upon vigorous stirring. The mixture was cooled to 100° C. Water was added and the reaction was stirred overnight resulting in formation of grey solid. The grey solid was filtered, washed with a generous amount of water, then dried in a vacuum oven. The solid material was refluxed with 50 ml of DCM; then 50 ml of hexane was added. The mixture was refluxed and cooled down. The solid material was filtered and dried. The resulting product of 2-Methylquinolin-8-ol was obtained as grey solid. (4 g, 85% yield).

(111) ##STR00537##

(112) 2-Methylquinolin-8-ol (1.393 g, 8.75 mmol) and triisopropoxyaluminum (1.787 g, 8.75 mmol) were suspended together in 120 mL of abs. ethanol and heated to reflux upon vigorous stirring under nitrogen atmosphere. After 1 h, yellow slightly cloudy reaction mixture was filtered through celite, providing Solution A.

(113) A solution of 2-methylquinolin-8-ol (1.393 g, 8.75 mmol) and benzofuro[2,3-b]pyridin-8-ol (1.620 g, 8.75 mmol) in 50 mL of EtOH was prepared and called Solution B. Solution B was added to the solution A. The mixture was refluxed for 12 h. the solid was filtered to give Compound 157 (2.8 g, 5 mmol, 57%).

(114) Properties of Synthesized Materials:

(115) TABLE-US-00003 TABLE 3 Tg Compound Deposition Temperature, ° C. ° C. Compound 31 200 108 Compound 3 240 120 Compound 157 210 115 Compound 86 265 123 Comparative Compound 200 92

(116) As one can see, synthesized compounds have significantly better (higher) glass transition temperature (Tg) than the Comparative Compound while having deposition temperatures low enough for VTE process.

Device Examples

(117) All example devices were fabricated by high vacuum (<10.sup.−7 Torr) thermal evaporation. The anode electrode is 1200 Å of indium tin oxide (ITO). The cathode consisted of 10 Å of LiF followed by 1,000 Å of Al. All devices are encapsulated with a glass lid sealed with an epoxy resin in a nitrogen glove box (<1 ppm of H.sub.2O and O.sub.2) immediately after fabrication, and a moisture getter was incorporated inside the package.

(118) Compounds were tested in two device structures: Structure 1 and Structure 2. The compounds used in device fabrication have the following chemical structures:

(119) ##STR00538##

(120) Device Structure 1 (the Compound as Host):

(121) The organic stack of the device consisted of sequentially, from the ITO surface, 100 Å of Compound HIL 1 as the hole injection layer (HIL), 400 Å of 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (NPD) as the hole transporting layer (HTL), 300 Å of the invention compound as host doped with Stability dopant and Red emitter in a ratio 87:10:3 forming the emissive layer (EML), and 550 Å of Alq.sub.3 (tris-8-hydroxyquinoline aluminum) as the electron transporting layer (ETL). Comparative Examples with Comparative Compound were fabricated similarly to the Device Examples except that the Comparative Compound was used as the host in the EML.

(122) Device Structure 2 (Compound as Host and/or BL):

(123) The organic stack of the device consisted of sequentially, from the ITO surface, 100 Å of Compound HIL 1 as the HIL, 400 Å of NPD as the HTL, 300 Å of the invention compound as host doped with Red emitter in a ratio 91:9 forming the EML, 100 Å of Compound 31 or Comparative Compound as hole Blocking Layer (BL), 450 Å of Alq.sub.3 (tris-8-hydroxyquinoline aluminum) as the ETL. Comparative Examples with Comparative Compound was fabricated similarly to the Device Examples except that the Comparative Compound was used as the host in the EML.

(124) The example devices were evaluated and their performance data are summarized in Tables 4 and 5 below.

(125) TABLE-US-00004 TABLE 4 Device Performances of Compound 157 vs. Comparative Compound in Device Structure 1 At 1,000 nits 1931 CIE Voltage LE EQE PE CIE CIE (relative (relative (relative (relative Host x y units) units) units) units) Com- 0.667 0.333 0.90 1.28 1.30 1.42 pound 157 Com- 0.663 0.336 1   1    1    1    parative Com- pound

(126) Comparison of Compound 157 and Comparative Compound in Device Structure 1 configuration shows similar CIE color coordinates but Compound 157 exhibited surprisingly improved voltage, luminous efficiency (LE), external quantum efficiency (EQE) and power efficiency (PE).

(127) TABLE-US-00005 TABLE 5 Device performances of Compound 31 vs. Comparative Compound in Device Structure 2 At 1,000 nits EQE PE 1931 CIE Voltage LE (rela- (rela- CIE CIE (relative (relative tive tive Host BL x y units) units) units) units) Comp. Comp. 0.670 0.327 1 1 1 1 Com- Com- pound pound Cmpd. Comp. 0.672 0.327 0.92 1.04 1.03 1.14 31 Com- pound Cmpd. Cmpd. 0.672 0.328 0.90 1.04 1.02 1.18 31 31 Comp. Comp. 0.674 0.326 0.98 1 1.03 1.05 3 Com- pound Comp. Comp. 0.672 0.327 0.91 1.04 1.03 1.15 86 Com- pound

(128) Comparison of Compounds 3, 31, and 86 and Comparative Compound in Device Structure 2 demonstrates same color coordinates with improved voltage, EQE and PE of the device. Using Compound 31 as both the host and BL some additional improvement in voltage and PE. This suggests that the inventive compounds are suitable to be used as BL in combination with being used as the host material.

(129) Based on the experimental device data shown above, the inventors found that replacement of biphenyl fragment of the host molecule by DBT- or DBF-containing fragment improved such important parameters of the device as voltage, EQE, and power efficiency. Improvement of other important parameter of OLED material as Tg was also observed.

(130) It is understood that the various embodiments described herein are by way of example only, and are not intended to limit the scope of the invention. For example, many of the materials and structures described herein may be substituted with other materials and structures without deviating from the spirit of the invention. The present invention as claimed may therefore include variations from the particular examples and preferred embodiments described herein, as will be apparent to one of skill in the art. It is understood that various theories as to why the invention works are not intended to be limiting.