Method of manufacturing microphone, microphone, and control method therefor

Abstract

Disclosed are a method of manufacturing a microphone, a microphone, and a control method thereof. The method includes forming a sound sensing module on a main substrate including a first sound aperture such that the sound sensing module is connected to the first sound aperture. The method further include forming a cover for receiving the sound sensing module formed therein with a second sound aperture corresponding to the first sound aperture on the main substrate. The method also includes forming a sound delay filter at a receiving space of the cover to be connected to the second sound aperture. The method also includes forming a semiconductor chip electrically connected to the sound sensing module at the receiving space, to selectively operate the sound delay filter according to a signal output from the sound sensing module.

Claims

1. A method of manufacturing a microphone, the method comprising: forming a sound sensing module on a main substrate including a first sound aperture, such that the sound sensing module is connected to the first sound aperture; forming a cover for receiving the sound sensing module, with a second sound aperture formed at the cover corresponding to the first sound aperture and mounted on the main substrate; forming a sound delay filter at a receiving space of the cover to be connected to the second sound aperture; and forming a semiconductor chip electrically connected to the sound sensing module at the receiving space and selectively operating the sound delay filter according to a signal output from the sound sensing module.

2. The method of claim 1, wherein the forming of the sound delay filter comprises: forming sacrificial layers on a top surface and a bottom surface of a filter substrate, respectively; forming a drive layer on the sacrificial layer on the top surface of the filter substrate; forming a plurality of first penetration apertures by etching the drive layer; forming a metal electrode at the etched drive layer; forming a photoresist layer on the sacrificial layer of the bottom surface of the filter substrate; forming a photoresist pattern by patterning the photoresist layer; forming a plurality of second penetration apertures by etching the substrate by using the photoresist pattern as a mask; and disposing the drive layer and the filter substrate to be spaced apart from each other by etching the sacrificial layers on a top surface and a bottom surface of a filter substrate.

3. The method of claim 2, further comprising: upon disposing the drive layer and the filter substrate to be spaced apart from each other: disposing a catalyst substrate on the drive layer; forming a sacrificial layer and a photoresist pattern on the catalyst substrate; etching the catalyst substrate by using the photoresist pattern as a mask; depositing a catalyst on the drive layer by using the etched catalyst substrate as a mask; and bonding a bonding material to the catalyst deposited to the drive layer.

4. The method of claim 3, wherein the bonding material is made from carbon nanotubes (CNT).

5. A microphone comprising: a sound sensing module mounted on a surface of a main substrate with a first sound aperture formed at the main substrate, such that the sound sensing module is connected to the first sound aperture; a cover for receiving the sound sensing module with a second sound aperture formed at the cover corresponding to the first sound aperture and mounted on the main substrate; a sound delay filter formed at a receiving space of the cover to be connected to the second sound aperture; and a semiconductor chip electrically connected to the sound sensing module at the receiving space and selectively operating the sound delay filter according to a signal output from the sound sensing module.

6. The microphone of claim 5, wherein the sound delay filter comprises: a filter substrate including a first plurality of penetration apertures; and a drive layer formed on the filter substrate to be spaced apart by a sacrificial layer, and including a second plurality of penetration apertures.

7. The microphone of claim 6, wherein the first plurality of penetration apertures and the second plurality of penetration apertures are offset from each other, and the first plurality of penetration apertures are selectively closed by the drive layer.

8. The microphone of claim 7, wherein the drive layer makes contact with the filter substrate to close the first plurality of penetration apertures when a current from the semiconductor is applied to the drive layer.

9. The microphone of claim 5, wherein the filter substrate is made of at least one of a silicon wafer and a silicon-on-insulator (SOI) wafer.

10. The microphone of claim 5, wherein the drive layer is made of at least one of silicon and polysilicon.

11. An operating method of a microphone, comprising: operating a sound sensing module by operating a sound processor; transmitting a sound source voltage generated from the sound sensing module to a semiconductor chip; measuring amplitude of a noise voltage with respect to the sound source voltage input to the semiconductor chip to compare the measured noise voltage with a reference voltage preset in the semiconductor chip; applying a current to a sound delay filter when the noise voltage is less than the reference voltage, so that a drive layer makes contact with a filter substrate to close a first plurality of penetration apertures, and to implement the microphone as a non-directional microphone.

12. The operating method of claim 11, further comprising, upon the comparing of the measured noise voltage with the reference voltage preset in the semiconductor chip, blocking supply of the current to the sound delay filter when the noise voltage is equal to or greater than the reference voltage, so that the drive layer is spaced apart from the filter substrate by a predetermined distance to open the first plurality of penetration apertures and to implement the microphone as a directional microphone.

13. The operating method of claim 11, wherein the sound processor comprises at least one of a sound recognition device, a hands free device, and a portable communication terminal.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) FIG. 1 is a schematic diagram illustrating a microphone according to a first exemplary embodiment of the present invention.

(2) FIG. 2 is a diagram illustrating a method of manufacturing a sound delay filter of a microphone according to an exemplary embodiment of the present invention.

(3) FIG. 3 is a diagram illustrating a method of manufacturing a sound delay filter of a microphone according to another exemplary embodiment of the present invention.

(4) FIG. 4 is a schematic diagram illustrating a microphone according to a second exemplary embodiment of the present invention.

(5) FIG. 5 is a flowchart illustrating a control method of a microphone according to an exemplary embodiment of the present invention.

(6) FIG. 6 is a schematic diagram illustrating an operation of a sound delay filter of a microphone according to an exemplary embodiment of the present invention.

DETAILED DESCRIPTION

(7) Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. However, the drawings and detailed description relate to some of various exemplary embodiments to efficiently describe characteristics of the present disclosure. Accordingly, the present disclosure is not limited to the following drawings and description.

(8) In the following description, if detailed description about well-known functions or configurations may make the subject matter of the disclosure unclear, the detailed description thereof will be omitted. The terms are defined by taking into consideration functions of the present disclosure, which may be changed according to the intentions and practices of users or operators. Accordingly, the terms should be determined based on the entire specification in the present disclosure.

(9) Further, in order to efficiently describe technical characteristics of the present disclosure, the exemplary embodiments may suitably modify, integrate, or divide terms that can be commonly comprehended by those skilled in the art. However, the present disclosure is not limited thereby.

(10) Hereinafter, exemplary embodiments will be described in more detail with reference to accompanying drawings.

(11) FIG. 1 is a schematic diagram illustrating a microphone according to a first exemplary embodiment of the present invention. Referring to FIG. 1, the microphone 10 according to the first exemplary embodiment of the present invention includes a main substrate 11, a cover 15, a sound sensing module 17, a sound delay filter 20, and a semiconductor chip 19.

(12) The main substrate 11 includes a first sound aperture 12, and may be configured by a Printed Circuit Board (PCB) substrate.

(13) In this case, the first sound aperture 12 serves as a path to receive a sound source generated from a sound processor 1.

(14) The sound processor 1 processes a sound of a user, and may include at least one of a sound recognition device, a hands free device, and a portable communication terminal.

(15) The sound recognition device can recognize and perform a command from the user when the user sends a command with a sound.

(16) The hands free device can connect to a portable communication terminal through near distance wireless communication so that the user may freely make a call without holding the portable communication terminal.

(17) The portable communication terminal may make a call in a wireless scheme, and may include a smart phone and a private portable information terminal (e.g., a Personal Digital Assistant (PDA)).

(18) The cover 15 is mounted on the main substrate 11. The cover 15 includes a second sound aperture 16 corresponding to the first sound aperture 12. The second sound aperture 16 serves as a path in which a sound source generated from the sound processor 1 is introduced as in the first sound aperture 12. The cover 15 may be made of a metal material.

(19) The sound sensing module 17 is located on the main substrate 11, and is connected to the first sound aperture 12. The sound sensing module 17 may sense a sound source generated from the sound processor 1, for example, by using a vibration membrane and a fixing membrane. In addition, the sound sensing module 17 can output a sensing signal to the semiconductor chip 19.

(20) The sound sensing module 17 may be configured by a non-directional microphone. In this case, the non-directional microphone may include a microphone based on MEMS technology.

(21) The sound delay filter 20 can be disposed at an upper portion of the sound sensing module 17. The sound delay filter 20 can be connected to the second sound aperture 16 which is formed in the cover 15. The sound delay filter 20 may include a filter substrate 21 and a drive layer 23. The filter substrate 21 may include a set of first penetration apertures H1, and may be made of at least one of a silicon wafer and a silicon-on-insulator (SOI) wafer.

(22) The drive layer 23 can be spaced apart by a sacrificial layer S on the filter substrate 21, and may include a set of second penetration apertures H2. In this case, the set of first penetration apertures H1 and the set of second penetration apertures H2 may be offset from each other.

(23) In addition, when a current from a semiconductor chip 19 (described below) is applied to the drive layer 23, the drive layer 23 makes contact with a substrate to change a directional characteristic. The drive layer 23 may be made of one of silicon and polysilicon.

(24) The semiconductor chip 19 can be electrically connected to the sound sensing module 17. The semiconductor chip 19 selectively operates the sound delay filter 20 according to a signal output from the sound sensing module 17. In more detail, the semiconductor chip 19 receives a sound source voltage from sound sensing module 17, and measures amplitude of a noise voltage with respect to the sound source voltage.

(25) Next, the semiconductor chip 19 determines whether the amplitude of the noise voltage is equal to or greater than an amplitude of a preset reference voltage to generate a determination result. In this case, the reference voltage may represent an intensity of a sound with which the user may easily call and perform sound recognition. The reference voltage may be set by the user or may be set by a previously designated algorithm (e.g., a program and probability model). The reference voltage may not be fixed, but may change according to the situation. The semiconductor chip 19 may include an Application Specific Integrated Circuit (ASIC).

(26) A method of manufacturing the microphone 10 as described above can be as follows. First, a sound sensing module 17 can be formed on a main substrate 11 including a first sound aperture 12 to be connected with the first sound aperture 12. In this case, the first sound aperture 12 receives a sound source generated from an external sound processor 1 to transfer the sound source to the sound sensing module 17. Next, a cover 15 can be formed on the main substrate 11.

(27) The cover 15 can be formed therein with a second sound aperture 16 corresponding to the first sound aperture 12.

(28) The second sound aperture 16 can receive the sound source generated from the external sound processor 1 as in the first sound aperture 12. Next, a sound delay filter 20 can be formed to be connected to the second sound aperture 16. Hereinafter, a method of manufacturing the sound delay filter 20 is described.

(29) FIG. 2 is a diagram illustrating a method of manufacturing a sound delay filter of the microphone according to an exemplary embodiment of the present invention. Referring to FIG. 2, in the method of manufacturing a sound delay filter 20 of the microphone, a filter substrate 21 is firstly prepared. The filter substrate 21 may be made of a silicon wafer. Next, as illustrated in FIG. 2 (a), sacrificial layers S can be formed on a top surface and a bottom surface of the filter substrate 21, respectively, and a drive layer 23 can be formed on the sacrificial layer S of the top surface. Subsequently, the photoresist layer PR can be formed on the drive layer 23. A photoresist pattern is formed by patterning the photoresist PR, and as shown in FIG. 2 (b), the drive layer 23 is etched by using the photoresist pattern S as a mask so that a set of first penetration apertures H1 are formed. In this case, the drive layer 23 may be made of one of polysilicon and SOI.

(30) Subsequently, as illustrated in FIG. 2 (c), a metal electrode 25 can be formed on the etched drive layer 23. In this case, the metal electrode 25 can be connected to both the drive layer 23 and a substrate in order to confirm capacitance. Next, as shown in FIG. 2 (d), a photoresist layer PR can be formed in the sacrificial layer S of a bottom surface of the filter substrate 21. After that, a photoresist pattern is formed by patterning the photoresist layer PR, by using the photoresist pattern as a mask, and as shown in FIG. 2 (e), the filter substrate 21 is etched so that a plurality of second penetration apertures H2 are formed.

(31) In this case, the first penetration apertures H1 and the second penetration aperture H2 are offset from each other.

(32) In this case, the first penetration aperture H1 is selectively closed and opened by the drive layer so that a directional characteristic is implemented.

(33) Next, as illustrated in FIG. 2 (f), a part of the sacrificial layer S of a top surface of the filter substrate 21 and a sacrificial layer S of a bottom surface are removed.

(34) Due to this, according to a part of the sacrificial layer S remaining at the top surface, the drive layer 23 is spaced apart from the filter substrate 21 by a predetermined distance.

(35) The sound delay filter 20 according to an exemplary embodiment of the present invention manufactured as described above can rotate in upward and downward directions, and is mounted to be connected to the second penetration aperture H2.

(36) Meanwhile, after forming the sound delay filter 20, a semiconductor chip 19 is formed to be electrically connected to the sound sensing module 17. The semiconductor chip 19 selectively operates the sound delay filter 20 according to a signal output from the sound sensing module 17. The semiconductor chip 19 may include an Application Specific Integrated Circuit (ASIC).

(37) FIG. 3 is a diagram illustrating a method of manufacturing a sound delay filter of the microphone according to another exemplary embodiment of the present invention. Referring to FIG. 3, using the manufacturing method of FIG. 2, as shown in FIG. 3 (g), a catalyst substrate 27 is disposed on the drive layer 23. In this case, the catalyst substrate 27 may be made of a silicon material.

(38) After a sacrificial layer S and a photoresist layer PR are formed on the catalyst substrate 27 and a photoresist pattern is formed by patterning the photoresist layer PR, the catalyst substrate 27 is etched by using the photoresist pattern S as a mask. By using the etched catalyst substrate 27 as the mask, as shown in FIG. 3 (h), a catalyst 29 is deposited on the drive layer 23. The catalyst 29 may include iron (Fe). The catalyst 29 is deposited at only the drive layer 23 which is exposed to an etched part of the catalyst substrate 27.

(39) In more detail, the catalyst 29 is deposited between a set of first penetration apertures H1 of the drive layer 23 exposed by an etched part of the catalyst substrate 27 as well as a top surface of the drive layer 23 exposed by the etched part of the catalyst substrate 27. As shown in FIG. 3 (i), a bonding material 30 is bonded to the catalyst 29 deposited to the drive layer 23. The bonding material 30 may include carbon nanotubes (CNT).

(40) In the same manner as the method of FIG. 2, the sound delay filter 20 according to the exemplary embodiment of the present invention formed as described above can be rotated in upward and downward directions and is mounted to be connected to the second penetration aperture H2.

(41) FIG. 4 is a schematic diagram illustrating a microphone according to a second exemplary embodiment of the present invention. Referring to FIG. 4, based on FIG. 1, a position of the sound delay filter 20 may be changed. Further, by removing a cover of FIG. 1, manufacture is possible by a simple process. In more detail, the sound sensing module 17 can be mounted at one surface of the main substrate 11 formed therein with the first sound aperture 12 to be connected to the sound sensing module 17.

(42) A sound delay filter 20 can be mounted on the sound sensing module 17 through a conjugated pad 40. In this case, the conjugated pad 40 is for the purpose of eutectic bonding. The eutectic bonding is bonding in which surfaces are easily melted and stuck to each other in the lowest melting point when constituent elements of an alloy satisfy conditions such as a predetermined component ratio and a predetermined temperature.

(43) That is, in order to bond the sound sensing module 17 to the sound delay filter 20, the conjugated pad 40 made by metal can be attached, and the sound sensing module 17 may be bonded to the sound delay filter 20 through the conjugated pad 40 through eutectic bonding.

(44) Since a configuration and a manufacturing method of the microphone 10 according to the second exemplary embodiment of the present invention are the same as a configuration and a manufacturing method shown in FIG. 1, a detailed description thereof is omitted.

(45) FIG. 5 is a flowchart illustrating a control method of a microphone according to an exemplary embodiment of the present invention.

(46) Referring to FIG. 5, at step S100 a sound processor 1 may start an operation, for example, by processing a sound of a user. The sound processor 1 may include at least one of a sound recognition device, a hands free device, and a portable communication terminal.

(47) When the sound processor 1 starts the operation, the sound sensing module 17 is also operated, per step S110. The sound sensing module 17 transmits a sound source voltage input from the sound processor 1 to a

(48) At step S130, the semiconductor chip 19 measures amplitude of a noise voltage with respect to the sound source voltage from the sound sensing module 17. The semiconductor chip 19 compares the noise voltage with a preset reference voltage, at step S140.

(49) When the noise voltage is less than the reference voltage, at step S150 the semiconductor chip 19 applies a current to the sound delay filter 20 so that a drive layer 23 can make contact with the filter substrate 21 to close the first penetration aperture H1, and to implement the microphone 10 as a non-directional microphone.

(50) When the noise voltage is equal to or greater than the reference voltage, at step S160, the semiconductor chip 19 blocks the supply of the current to the sound delay filter 20, so that the drive layer 23 does not make contact with the filter substrate 21 to open the first penetration aperture H1, and to implement the microphone 10 as a directional microphone. Finally, at step S170 the sound processor 1 is terminated.

(51) An operation of the sound delay filter 20 is described with reference to FIG. 6. FIG. 6 is a schematic diagram illustrating an operation of a sound delay filter of the microphone according to an exemplary embodiment of the present invention.

(52) Referring to FIG. 6, the sound delay filter 20 selectively implements directional or non-directional characteristic according to the determination signal from the semiconductor chip 19. The semiconductor chip 19 compares a noise voltage from the sound sensing module 17 with a preset reference voltage.

(53) When the noise voltage is less than the reference voltage, the semiconductor chip 19 applies a current to the sound delay filter 20 so that the drive layer 23 makes contact with the filter substrate 21 as illustrated in FIG. 6 (A).

(54) In this case, since the first penetration aperture H1 formed at the drive layer 23 and the second penetration aperture H2 formed at the filter substrate 21 are offset from each other, the first penetration aperture H1 and the second penetration aperture H2 are closed. Due to this, the microphone 10 is implemented as a non-directional microphone.

(55) Meanwhile, the semiconductor chip 19 compares a noise voltage input from the sound sensing module 17 with a preset reference voltage. When the noise voltage is equal to or greater than the reference voltage, the semiconductor chip 19 blocks the supply of the current to the sound delay filter 20, so that the drive layer 23 is spaced apart from the filter substrate 21 in an original state as illustrated in FIG. 6 (B). That is, the drive layer 23 is returned to the original state. In this case, the sound delay filter 20 opens the first penetration aperture H1 formed at the drive layer 23 and the second penetration aperture H2 formed at the filter substrate 21 so that the microphone 10 is implemented as a directional microphone.

(56) Accordingly, since the microphone 10 according to an exemplary embodiment of the present invention may selectively operate non-directional and directional characteristics, and is operated according to electrostatic force, power consumption and cost is reduced.

(57) An exemplary embodiment of the present invention is disclosed herein. While this disclosure has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the disclosure is not limited to the disclosed embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.